Electronic Devices and Semiconductor Manufacturing Commons^™

Total Dose Effects Of Ionizing And Non-Ionizing Radiation On Piezoresistive Pressure Transducer Chips, Samuel J. Willmon

Theses and Dissertations

The effects of ionizing and non ionizing radiation on the resistivity of silicon based, piezoresistive bulk micro-machined chips from pressure transducers were examined. Standard current-voltage (I-V) measurements were taken in-situ and post-irradiation during isothermal annealing at room temperature. One group of chips was irradiated to a maximum total gamma dose of lMrad(Si) in the 11,000 Ci (60) Co gamma cell at Ohio State University. The second group of chips was irradiated at the Ohio State University Research Reactor facility to a maximum total neutron dose of 4 Mrad(Si) using beam port Hi. The resistivity was shown to decrease during gamma …

Algan/Gan Heterostructure Field-Effect Transistors On Single-Crystal Bulk Aln, X. Hu, J. Deng, N. Pala, R. Gaska, M. S. Shur, C. Q. Chen, J. Yang, Grigory Simin, M. A. Khan, J. C. Rojo, L. J. Schowalter

Faculty Publications

We report on the performance of AlGaN/GaN/AlN heterostructurefield-effect transistors(HFETs) grown over slightly-off c-axis, single-crystal, bulk AlN substrates. Dc and rf characteristics of these devices were comparable to HFETs grown on semi-insulating SiC. The obtained results demonstrate that bulk AlN substrates are suitable for fabricating high-power microwave AlGaN/GaN transistors.

Design For Signal Integrity In High Frequency, High Density Circuit Boards, Juan Manuel Talavera Martinez

Theses

The electronics market is continually seeking fast and small high performance products. The clock frequency in computer systems is often above 2GHz and new generations of laptops have considerably reduced in size. These features make printed circuit board (PCB) design more difficult than in the past.

This thesis is an investigation of the current design of high speed PCB. The complexity of this type of circuit makes the designer needs an extensive knowledge of the techniques used to generate a reliable signalling, in other words, signal integrity. To achieve this objective, the design community has to overcome several problem related …

Study Of Transport Properties Of Inas Using Monte Carlo Simulation, Satyanadh Gundimada

Electrical & Computer Engineering Theses & Dissertations

The present research is aimed at ascertaining the usefulness of InAs semiconductor material for single photon avalanche photo detectors operating in the Geiger mode at 2 μm wavelengths. InAs is considered as the material suitable for the purpose because of its less bandgap and lower effective mass of the electrons when compared to other semiconductor materials presently in use. Hence, theoretically transient transport properties of bulk InAs are superior and the velocity overshoot phenomena stronger. InAs is a relatively less explored material when compared to other materials like GaAs. The choice of the material is justified with thorough exploration of …

Phase-Sensitive Detection Electronics For Wavelength Modulation Spectroscopy Experiments, Tyrone Pate

Electrical & Computer Engineering Theses & Dissertations

Wavelength modulation spectroscopy (WMS) is a non-intrusive detection technique, which enables the measurement of several parameters such as pressure, concentration, and temperature of a species of interest by analyzing the latter's absorption lineshape profile. The method employs a synchronous modulation and detection apparatus to increase the signal to noise ratio and hence the sensitivity of the measurement. Phase-sensitive detection and demodulation of the signal is performed at the modulation frequency and its harmonics. Research at ODU demonstrates that each particular measurement can be performed optimally at an appropriate harmonic of the modulation frequency. The most suitable harmonic depends on many …

Evaluation Of Distributed Effects In Field Effect Transistors For High Frequency Applications, Srinivas Rowjee Cuddapah

Electrical & Computer Engineering Theses & Dissertations

Metal Semiconductor Field Effect Transistors are at the heart of currently used microwave and millimeter-wave devices. CAD (Computer Aided Design) models for MESFET are used in the development and optimization of high-speed microwave devices. The increase in the chip density demands more accurate models. A distributed small signal model was developed for a GaAs MESFET account of the high frequency effects.

The lumped model of the MESFET is inadequate at frequencies where the wavelength of operation approaches device dimensions. This is because different regions in the device can experience different amplitudes and phases of the biasing signal. In this thesis, …

Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman

Electrical & Computer Engineering Faculty Publications

CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. …

Maximum Current In Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska

Faculty Publications

We present experimental and modeling results on the gate-length dependence of the maximum current that can be achieved in GaN-based heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs (MOSHFETs). Our results show that the factor limiting the maximum current in the HFETs is the forward gate leakage current. In the MOSHFETs, the gate leakage current is suppressed and the overflow of the two dimensional electron gas into the AlGaN barrier region becomes the most important factor limiting the maximum current. Therefore, the maximum current is substantially higher in MOSHFETs than in HFETs. The measured maximum current increases with a decrease in the gate …

Fabrication Techniques For Iii-V Micro-Opto-Electro-Mechanical Systems, Jeremy A. Raley

Theses and Dissertations

This thesis studies selective etching techniques for the development of Al_xGa_1-xAs micro-opto-electro-mechanical systems (MOEMS). New MEMS technology based on materials such as Al_xGa_1-xAs enables the development of micro-systems with embedded active micro-optical devices. Tunable micro-lasers and optical switching based on MOEMS technology will improve future wavelength division multiplexing (WDM) systems. WDM vastly increases the speed of military communications and sensor data processing. From my designs, structures are prepared by molecular beam epitaxy. I design a mask set for studies of crystal plane selectivity. I perform a series of experiments on the selective …

Design And Fabrication Of Micro-Electro-Mechanical Structures For Tunable Micro-Optical Devices, Michael C. Harvey

Theses and Dissertations

Tunable micro-optical devices are expected to be vital for future military optical communication systems. In this research I seek to optimize the design of a microelectromechanical (MEM) structure integrated with a III-V semiconductor micro-optical device. The resonant frequency of an integrated optical device, consisting of a Fabry-Perot etalon or vertical cavity surface emitting laser (VCSEL), may be tuned by applying an actuation voltage to the MEM Flexure, thereby altering the device's optical cavity length. From my analysis I demonstrate tunable devices compatible with conventional silicon 5V integrated circuit technology. My design for a Fabry-Perot etalon has a theoretical tuning range …

The Need For Pfc Abatement In Semiconductor Manufacturing, Mohsen Manesh, Brian Kendrick

Inquiry: The University of Arkansas Undergraduate Research Journal

Perfluorocompounds (PFCs) are highly stable chemical compounds used in two integral steps of semiconductor manufacturing: chemical vapor deposition (CVD) chambers and etch chambers. Unfortunately, PFCs are also greenhouse gases linked to global warming. This, combined with their long atmospheric lifetimes gives them global warming potentials much higher than C02 the principal greenhouse gas. In a series of voluntary agreements with the United States and other national governments, the worldwide semiconductor industry has set a goal of reducing PFC emissions to 90% of their 1995 levels. To reach this goal, researchers have explored four main methods of reduction: substitution of PFCs, …

Co-Polymers Of Furan With Pyrrole Or Thiophene: A Synthetic Study, Rose M. Mcconnell, Walter E. Godwin, Susan E. Baker, Kenya Powell, Martha Baskett, Amy Morara, Xiadong Ma

Journal of the Arkansas Academy of Science

The use of conductive polymers as a substitute for metallic conductors and semiconductors has attracted much attention in the literature. In particular, aromatic heterocyclic polymers constitute an important class since they possess chemical and electrical stability in both the oxidized (doped) and neutral (undoped) state. Doping a polymer allows one to vary its electrical, mechanical, optical, and thermal properties. The properties of these polymers are promising for their many technological uses such as antistatic coatings, solar cells, and electronic devises. Polyfuran is among the least common heterocyclic polymers. Polyfuran has been reported to be much less stable that either polypyrrole …

Strained Quantum Well Heterostructure : Modeling And Simulation Of 980 Nm Laser, Yew Mun Hung

Student Works (2000-2009)

This thesis concerns the study of a strained quantum well laser diode emitting at wavelength of about 980 nm which is suitable for pumping Er³⁺ doped fiber amplifiers. The concept of a strained quantum well in the design of the active medium of the laser diode is discussed. A model is proposed that incorporates features of the physical structural factors and characteristics of the structure. The theoretical background linked directly to the simulation of the model is to provide calculations and derivations of the optical properties of the modeled structure. Theoretical calculations were made taking into account the variation of …

Oxidation-Induced Stacking Fault In (100) And (111) Silicon Wafers, Mei Keat Liang

Student Works (2000-2009)

Oxidation-induced stacking fault (OISF) dimension and density change on (100) and (111) wafers, as a result of repeated preferential etching were studied using AFM. optical microscope and angular polishing techniques. Density on (100) and (111) wafers is independent of surface removal up to 3.0µm. This indicates the single layer nature of OISF formed from the sand blasted wafer. Besides having higher density, OISFs from (100) wafer were longer than OISF from (111) wafer. OISF width increases linearly with surface removal however the length does not change significantly with surface removal. ln the OISF normal depth studies using angular polishing technique, …

Si3N4/Algan/Gan-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, R. Gaska

Faculty Publications

We report on a metal–insulator–semiconductor heterostructurefield-effect transistor (MISHFET) using Si₃N₄ film simultaneously for channel passivation and as a gate insulator. This design results in increased radio-frequency (rf) powers by reduction of the current collapse and it reduces the gate leakage currents by four orders of magnitude. A MISHFET room temperature gate current of about 90 pA/mm increases to only 1000 pA/mm at ambient temperature as high as 300 °C. Pulsed measurements show that unlike metal–oxide–semiconductor HFETs and regular HFETs, in a Si₃N₄ MISHFET, the gate voltage amplitude required for current collapse is much higher …

Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska

Faculty Publications

We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10⁻⁶ Ω cm² and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag,Au, and pGaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffractionanalysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor.

Mechanism Of Radio-Frequency Current Collapse In Gan-Algan Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

The mechanism of radio-frequency current collapse in GaN–AlGaN heterojunctionfield-effect transistors(HFETs) was investigated using a comparative study of HFET and metal–oxide–semiconductor HFET current–voltage (I–V) and transfer characteristics under dc and short-pulsed voltage biasing. Significant current collapse occurs when the gate voltage is pulsed, whereas under drain pulsing the I–V curves are close to those in steady-state conditions. Contrary to previous reports, we conclude that the transverse electric field across the wide-band-gap barrier layer separating the gate and the channel rather than the gate or surface leakage currents or high-field effects in the gate–drain spacing is responsible for the current collapse. We …

Highly Doped Thin-Channel Gan-Metal-Semiconductor Field-Effect Transistors, R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, Grigory Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, N. Pala

Faculty Publications

We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors (MESFETs) grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5×10¹⁸ cm⁻³ were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and maximum oscillation frequencies, and reduced low frequency and microwave noise. The obtained results demonstrate that the dc and microwave performance characteristics of short-channel GaN MESFETs may be comparable to those for conventional AlGaN/GaN heterostructure FETs.

Effects Of Argon Dilution Of Silane On The Optical Properties And Surface Morphology Of Hydrogenated Amorphous Silicon, Choon Kheam Lim

Student Works (2000-2009)

Hydrogenated amorphous silicon (a.Si:H) was prepared using the d.c plasma grow discharge system. Two sets of samples were prepared and studied. The first set of samples referred to as the high argon dilution films were prepared from the discharge of pure silane at flow-rate of 5sccm and silane at the same flow-rate diluted in argon at flow-rates of 5, 10 and 15sccm. Similarly, the second set of sample referred to as the low argon dilution films were prepared from the discharge of pure silane at flow-rate of20sccm and silane at the same flow-rate diluted in argon at the flow-rates mentioned …

Effect Of Gate Leakage Current On Noise Properties Of Algan/Gan Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang

Faculty Publications

The effect of the gate leakage current fluctuations on noiseproperties of AlGaN/GaN heterostructurefield effect transistors(HFETs) has been studied in conventional HFET structures and in AlGaN/GaN metal-oxide-semiconductorheterostructurefield effect transistors (MOS-HFETs). The comparison of the noiseproperties of conventional AlGaN/GaN HFETs and AlGaN/GaN MOS-HFETs fabricated on the same wafer, allowed us to estimate the contribution of the gate currentnoise to the HFET’s output noise. The effect of the gate current fluctuations on output noiseproperties of HFETs depends on the level of noise in the AlGaN/GaN HFETs. For the transistors with a relatively high magnitude of the Hooge parameter α∼10⁻³, even a …

Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur

Faculty Publications

We report on AlGaN/GaN metal–oxide–semiconductor heterostructurefield-effect transistors (MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO₂/AlGaNheterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 …

Theory Of Sic Schottky Barrier Conduction And Model Analysis For Diode Breakdown With And Without Screw Dislocations, Lifeng Zheng

Electrical & Computer Engineering Theses & Dissertations

Silicon Carbide is a very promising candidate for applications in high-power, high-temperature, and high-radiation conditions under which conventional semiconductors cannot perform adequately. However, the SiC processing technology has not yet reached maturity. There is also limited knowledge of its physical and chemical characteristics, and its device behavior is not well understood. The aim of this thesis is to analyze two specific problems in the SiC area. The first issue involves the large discrepancy between experimental I - V characteristics of SiC Schottky diodes and their theoretical values. The observed data, especially at low voltages, is found to be orders of …

Investigation Of Ge2Te2Sb5 Chalcogenide Thin Film For Use As An Analog Memory, Travis F. Blake

Theses and Dissertations

This work investigates the feasibility of using Ge₂Te₂Sb₅ chalcogenide films for analog memory. Thick film chalcogenide memory devices provided by Ovonyx, Inc. are characterized to determine how well the devices meet the repeatability, stability and predictability criteria needed to accurately store analog data values. Chalcogenide memory devices take advantage of the phase-shifting nature of chalcogenide materials to store the analog data as a resistance level. An automated test system was developed to characterize the material and the prototype devices with the goal to determine the 1) non-destructive readability of the device at different resistance values; …

High Frequency Characteristic Studies Of The N-Channel Enhancement Mode Power Mosfet Device, Rosli Sahrani

Student Works (2000-2009)

The n-channel enhancement mode power MOSFET device which is known to have the highest switching speed among the controllable switches group is the device studied in this research work. This commercially packaged device manufactured. by Harris Semiconductor has a combination ofMOSFET and JFET structures superimposed. It has a p-type MOS gate and a reversed biased field induced pin junction laterally at the surface and a vertical JFET structure. A Keithley 590 C-V Analyz.er was used to characterize this device. High frequency (1MHz) capacitance-voltage (C-V) and conductance-voltage (G-V) characteristic were measw-ed across the gate-source, gate-drain and source-drain tenninals of the device. …

New Buffer Layers, Large Band Gap Ternary Compounds: Cualte², K. Benchouk, E. Benseddik, C. O. El Moctar, J. C. Bernède, S. Marsillac, J. Pouzet, A Khellil

Electrical & Computer Engineering Faculty Publications

After deposition, by evaporation under vacuum, of Al/Cu/Te, multilayer structures, annealing at 673 K or more for half an hour, under argon flow, allows CuAlTe2 films crystallized in the chalcopyrite structure to be obtained. The optical and electrical properties are interpreted by introducing the influence of impurity foreign phases present in the films. The optical properties are sensitive to the small Al2O3 domains randomly distributed into the CuAlTe2 polycrystalline matrix. The optical band gap is slightly increased (2.35 eV) by the presence of alumina. The conductivity measurements show that a short circuit effect can be induced by a binary Cu2-xTe …

Application Of Vibrational Techniques In Determination Of Dynamic Properties Of Agricultural Products-State Of The Arton Of Vibrational Techniques In Determination Of Dynamic Properties Of Agricultural Products-State Of The Art, Silas Kajuna

Tanzania Journal of Engineering and Technology (TJET)

Vibration is one of the techniques employed in the determination of dynamic properties of fruits and vegetables. It entails generation of a mechanical or acoustic vibrational signal which is propagated through the flesh of the agricultural material. A transducer is either attached or held close to the specimen to monitor the propagation of the signal through the specimen. The manner in which the signal is transmitted through the material is analyzed, and the dynamic properties of the specimen which relate to its firmness or its internal being are derived. The technique has been around for the past 30 years or …

Evaluation Of The Transport Properties Of Gasb For Bipolar Applications Through Monte Carlo Simulations, Damayanthi Palaniappan

Electrical & Computer Engineering Theses & Dissertations

GaAs is currently the semiconductor material of choice for high speed, low power applications. Its electronic transport properties are superior to almost all other semiconductors. It is also used in a variety of bipolar applications such as photodetectors and photo-mixers. However, as is well known, the hole mobility and related transport parameters of GaAs are not very good. This is a serious drawback, and poses a potential problem for all applications involving bipolar conductivity. In order to increase the high :frequency limits and high-speed capability of bipolar devices, the choice of an alternative material, therefore, becomes necessary. An important first …

Low-Temperature Molecular Beam Epitaxy Of Gaas: A Theoretical Investigation Of Antisite Incorporation And Reflection High-Energy Diffraction Oscillations, K. Natarajan, Rama Venkat, Donald L. Dorsey

Electrical & Computer Engineering Faculty Research

Surface dynamics dominate the incorporation of charged, As+Ga, and neutral, As0Ga, antisite arsenic, and the temporal variation of reflection high-energy electron diffraction(RHEED) intensity in the low-temperature molecular beam epitaxy of (100) gallium arsenide(GaAs). A rate equation model is proposed which includes the presence and dynamics of a physisorbed arsenic (PA) layer riding the growth surface. The PA layer dictates the incorporation and concentration of As+Ga and As0Ga. Additionally, it influences the RHEED oscillations (ROs) behavior and the RO’s dependence on its coverage through its contribution to the reflected intensity. The model results for the dependence of As+Ga and As0Ga concentrations …

Réalisation De Couches Minces De Cualse² Par Recuit De Feuilllets Superposés Cu/Al/Se/Al…, Étude De Conditions De Dépôt, C.O. El Moctar, S. Marsillac, J. C. Bernede, A. Conan, K. Benchouk, A. Khelil

Electrical & Computer Engineering Faculty Publications

Thin layers of Cu/Al/Se/Al/Cu/Al/Se/…/Al/Se sequentially deposited have been annealed half an hour at 855 K. CuAlSe₂ thin films crystallized in the chalcopyrite structure are obtained. The films being contaminated by oxygen, the experimental deposition conditions of the aluminum layer have been improved in order to decrease the atomic concentration of oxygen below 5 at%. Such results can be obtained in vacuum of 10^-4 Pa, when the aluminum deposition rate is 1 nm/s and when the layer is immediately covered after deposition. Films obtained in such a way are nearly stoichiometric with lattice parameters in accordance with the expected …

Time-Resolved Reflection High-Energy Electron Diffraction Study Of The Ge(111)-C(2×8)-(1×1) Phase Transition, Xinglin Zeng, Bo Lin, Ibrahim El-Kholy, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The dynamics of the Ge(111)-c(2×8)-(1×1) phase transition is investigated by 100-ps time-resolved reflection high-energy electron diffraction. A laser pulse heats the surface while a synchronized electron pulse is used to obtain the surface diffraction pattern. Slow heating shows that the adatoms in Ge(111)-c(2×8) start to disorder at ∼510 K and are converted to a disordered adatom arrangement at 573 K. For heating with 100-ps laser pulses, the Ge(111)-c(2×8) reconstructed adatom arrangement starts to disorder at 584±16K, well above the onset temperature of ∼510 K for the disordering of Ge(111)-c(2×8) observed for slow …