Electronic Devices and Semiconductor Manufacturing Commons^™

Investigation And Characterization Of Silicon Carbide Power Mosfets, Vincent Hassman

Electrical Engineering and Computer Science Undergraduate Honors Theses

As engineers constantly seek to make solar power systems smaller, cheaper, and more efficient, technological enhancements in the electronics that run them are required. One of the most fundamental electronic components of any solar system is the inverter, which takes DC current from the solar cell and turns it into AC current that is supported by the grid. This is done with metal oxide semiconductor field effect transistors (MOSFETs). Through more advanced MOSFET technology, inverters can switch at a higher frequency, increasing efficiency and reducing size and cost.

MOSFET performance can be enhanced by swapping the traditional silicon substrate with …

Advancing 4h-Silicon Carbide Power Mosfets Through Three-Dimensional Technology Computer Aided Design Optimization, Skylar A. Deboer

Electronic Theses & Dissertations (2024 - present)

This research contributes to the advancement of 1.2 kV 4H-Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) through the development and implementation of sophisticated three-dimensional Technology Computer-Aided Design (3D TCAD) methodologies. These advanced simulation techniques enable comprehensive evaluation of innovative unit cell architectures that remain inaccessible to conventional two-dimensional (2D) TCAD approaches. By leveraging these 3D simulation capabilities, this work facilitates significant improvements in both the performance and reliability of next-generation wide-bandgap power devices.

Power devices convert electrical energy between different forms throughout the power grid making them essential in applications ranging from personal electronics, electric vehicles, renewable energy systems, industrial …

Design And Validation Of A High-Power, High Density All Silicon Carbide Three-Level Inverter, Zhongjing Wang

Graduate Theses and Dissertations

Transportation electrification is clearly the road toward the future. Compared to internal combustion engine, the electrified vehicle has less carbon-dioxide emission, less maintenance costs and less operation costs. It also offers higher efficiency and safety margin. More importantly, it relieves human’s dependence on conventional fossil energy. In the electrification progress, the revolution of electric traction drive systems is one of the most important milestone. The traction system should keep high efficiency to avoid performance reduction. Moreover, the motor drive should be designed within limited space without sacrificing output power rating. Based on the road map from US Drive Electrical and …

Switching Trajectory Control For High Voltage Silicon Carbide Power Devices With Novel Active Gate Drivers, Shuang Zhao

Graduate Theses and Dissertations

The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry due to their lower parasitics, higher blocking voltage, and higher thermal conductivity over their silicon (Si) counterparts. Applications of high voltage SiC power devices, generally 10 kV or higher, can significantly reduce the amount of the cascaded levels of converters in the distributed system, simplify the system by reducing the number of the semiconductor devices, and increase the system reliability.

However, the gate drivers for high voltage SiC devices are not available on the market. Also, the characteristics of the third generation 10 kV SiC MOSFETs …

Experimental Study And Modeling Of The Gm-I Dependence Of Long-Channel Mosfets, Michael Fong Cheng

Master's Theses

This thesis describes an experimental study and modeling of the current-transconductance dependence of the ALD1106, ALD1107, and CD4007 arrays. The study tests the hypothesis that the I-gm dependence of these 7.8 µm to 10 µm MOSFETs conforms to the Advanced Compact Model (ACM). Results from performed measurements, however, do not support this expectation. Despite the relatively large length, both ALD1106 and ALD1107 show sufficiently pronounced ‘short-channel’ effects to render the ACM inadequate. As a byproduct of this effort, we confirmed the modified ACM equation. With an m factor of approximately 0.6, it captures the I-gm dependence with sub-28% maximum error …

Low-Temperature Fabrication Process For Integrated High-Aspect Ratio Metal Oxide Nanostructure Semiconductor Gas Sensors, William Paul Clavijo

Theses and Dissertations

This work presents a new low-temperature fabrication process of metal oxide nanostructures that allows high-aspect ratio zinc oxide (ZnO) and titanium dioxide (TiO₂) nanowires and nanotubes to be readily integrated with microelectronic devices for sensor applications. This process relies on a new method of forming a close-packed array of self-assembled high-aspect-ratio nanopores in an anodized aluminum oxide (AAO) template in a thin (2.5 µm) aluminum film deposited on a silicon and lithium niobate substrate (LiNbO₃). This technique is in sharp contrast to traditional free-standing thick film methods and the use of an integrated thin aluminum film …

Assessing The Mvs Model For Nanotransistors, Siyang Liu, Xingshu Sun, Mark S. Lundstrom

The Summer Undergraduate Research Fellowship (SURF) Symposium

A simple semi-empirical compact MOSFET model has been developed, which is called MIT virtual source (MVS) model. Compare to other model used in industry, MVS model requires only a few parameters, most of which can be directly obtained from experiment, and produce accurate results. One aim of this paper is to test the applicability of the MVS model to transistor made from MoS₂ rather than silicon. Another target is to determine the sustainability of the MVS model under different transistor tests. To achieve these goals, the MVS model will be used to fit the experimental data on MoS_{2 …}