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Clemson University

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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Investigation Of Vo2 Thin Films And Devices For Opto-Electromechanical Applications, Samee Azad Aug 2023

Investigation Of Vo2 Thin Films And Devices For Opto-Electromechanical Applications, Samee Azad

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Specialized and optimized low pressure direct oxidation technique have been implemented to synthesize high quality VO2 thin films on various substrates (sapphire, SiO2/Si, AT-cut quartz, GaN/AlGaN/GaN/Si and muscovite). Structural and surface characterization methods such as X-ray diffraction, Raman spectroscopy and atomic force microscopy have been administered on the grown VO2 films which indicate their material quality. Transition of characteristics of the VO2 films are caused by semiconductor metal transition (SMT). This phenomenon is attributed as the change maker in transition of resistivity and transmitted optical power through the VO2 films. Apart the substrates mentioned, …

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Universal Short-Circuit And Open-Circuit Fault Detection For An Inverter, Buck Brown May 2023

Universal Short-Circuit And Open-Circuit Fault Detection For An Inverter, Buck Brown

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Short-circuit and open-circuit faults of an inverter’s power device often lead to catastrophic failure of the entire system if not detected and acted upon within a few microseconds, particularly for emerging wide bandgap (WGB) power semiconductors. While a significant amount of research has been done on the fast and accurate protection and detection of short-circuit faults, there has been less success corresponding to the research on open-circuit faults. Common downfalls include protection and detection that are too application-specific, take longer than a couple of microseconds, and are not cost-efficient. This study proposes a new open-circuit fault protection and detection system …

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Enhancing The Performance Of Poly(3-Hexylthiophene) Based Organic Thin-Film Transistors Using An Interface Engineering Method, Eyob Negussie Tarekegn Dec 2022

Enhancing The Performance Of Poly(3-Hexylthiophene) Based Organic Thin-Film Transistors Using An Interface Engineering Method, Eyob Negussie Tarekegn

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An original design and photolithographic fabrication process for poly(3-hexylthiophene-2, 5-diyl) (P3HT) based organic thin-film transistors (OTFTs) is presented. The structure of the transistors was based on the bottom gate bottom contact OTFT. The fabrication process was efficient, cost-effective, and relatively straightforward to implement. Current–voltage (I-V) measurements were performed to characterize the primary electronic properties of the transistors. The measured mobility of these transistors was significantly higher than most results reported in the literature for other similar bottom gate bottom contact P3HT OTFTs. The higher mobility is explained primarily by the effectiveness of the fabrication process in keeping the interfacial layers …

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Synthesis And Characterization Of Vo2 Thin Films On Piezoelectric Substrates, Samee Azad Dec 2022

Synthesis And Characterization Of Vo2 Thin Films On Piezoelectric Substrates, Samee Azad

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Polycrystalline VO2 thin films synthesized on two piezoelectric substrates (AT-cut quartz and GaN/AlGaN/GaN/Si) using low pressure direct oxidation technique have been characterized and compared to VO2 grown on traditional non-piezoelectric substrates sapphire and SiO2/Si. X-ray diffraction and atomic force microscopy characterization performed on the as grown films confirmed high quality of the VO2 films grown on both the piezoelectric and non-piezoelectric substrates. Changes in material properties associated with the semiconductor metal transition (SMT) of the VO2 films were investigated through resistivity and transmitted optical power changes measured across the SMT. It was observed that …

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Design Of Arbitrary Planar Optical Devices With Full Phase Control Using Nanoimprinting Of Refractive Index, Matthew Panipinto Nov 2022

Design Of Arbitrary Planar Optical Devices With Full Phase Control Using Nanoimprinting Of Refractive Index, Matthew Panipinto

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Planar optical devices offer a lightweight solution to the constraints found in traditional optical devices. While subwavelength patterning of optics offers attractive performance and size, traditional fabrication methods demand a trade-off between resolution and throughput that presents a significant hurdle for the widespread use of subwavelength devices. Nanoimprinting of refractive index (NIRI) is a novel fabrication method pioneered in previous work that offers promise in mitigating the throughput issues that hamstring traditional fabrication methods. However, NIRI has not been shown to impart full $2\pi$ phase control in planar optical devices, nor has a method for fabricating arbitrary designs using the …

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Sub-Bandgap Photon-Assisted Electron Trapping And Detrapping In Algan/Gan Heterostructure Field-Effect Transistors, Andrew Gunn Aug 2022

Sub-Bandgap Photon-Assisted Electron Trapping And Detrapping In Algan/Gan Heterostructure Field-Effect Transistors, Andrew Gunn

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We have investigated photon-assisted trapping and detrapping of electrons injected from the gate under negative bias in a heterostructure field-effect transistor (HFET). The electron injection rate from the gate was found to be dramatically affected by sub-bandgap laser illumination. The trapped electrons reduced the two-dimensional electron gas (2DEG) density at the AlGaN/GaN heterointerface but could also be emitted from their trap states by sub-bandgap photons, leading to a recovery of 2DEG density. The trapping and detrapping dynamics were found to be strongly dependent on the wavelength and focal position of the laser, as well as the gate bias stress time …

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