Electronic Devices and Semiconductor Manufacturing Commons^™

Robust Hardware Trojan Detection Leveraging Dual‑Domain Features And Stacked Ensemble Learning, Sefatun-Noor Puspa

All Theses

In Cyber-physical systems rely on sensors, communication, and computing, all powered by integrated circuits (ICs). These ICs are vulnerable to malicious hardware attacks, with hardware Trojans being one of the stealthiest threats. Trojans are malicious implants in the circuitry, which are often inserted during design or fabrication stages. This stealthy addition remains dormant until triggered and might cause functional disruptions or sensitive information leakage once triggered. Traditional IC validation methods, such as functional testing and logic analysis, usually fail to capture these subtle anomalies because hardware Trojans are intentionally designed to mimic normal circuit behavior. They often remain dormant under …

Low Energy Ion Irradiation Effects In Electronic Devices And Materials, David C. Mccall

All Dissertations

The physics and engineering of ion-solid interactions are governed by the ion beam characteristics (flux, charge, energy) and target(s) in question. Here I present work on two projects related to the extraction of a high flux of low charge state Argon ions from a commercial plasma source and the irradiation of an engineered target, a transistor, with high charge state Argon ions.

An end-Hall ion source that produces a a high current plasma of ions and electrons in a rough vacuum environment is characterized. Using a Langmuir probe and multiple pressure measurements, the ion and electron content of the source …

Self-Poled P(Vdf-Trfe) Based Composites For Energy Harvesting And Wearable Sensor Applications, Lavanya Muthusamy

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The growing demand for flexible, low-power, and self-powered wearable electronic systems has accelerated research interest in polymer-based sensors and energy harvesting technologies. Among piezoelectric polymer materials, Poly(vinylidene fluoride-trifluoro ethylene) [P(VDF-TrFE)], over the years, has garnered significant attention due to its unique piezoelectric properties, high dielectric constant, mechanical flexibility, thermal stability, chemical resistance, biocompatibility and compatibility with scalable fabrication processes. Despite its advantages, conventional P(VDF-TrFE)-based devices often require external poling and face limitations in integration with low-cost, flexible substrates. To overcome these limitations, this research study explores the nanofiller approach, along with facile fabrication processes, and structural design strategies aimed at …

Investigation Of Vo2 Thin Films And Devices For Opto-Electromechanical Applications, Samee Azad

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Specialized and optimized low pressure direct oxidation technique have been implemented to synthesize high quality VO₂ thin films on various substrates (sapphire, SiO₂/Si, AT-cut quartz, GaN/AlGaN/GaN/Si and muscovite). Structural and surface characterization methods such as X-ray diffraction, Raman spectroscopy and atomic force microscopy have been administered on the grown VO₂ films which indicate their material quality. Transition of characteristics of the VO₂ films are caused by semiconductor metal transition (SMT). This phenomenon is attributed as the change maker in transition of resistivity and transmitted optical power through the VO₂ films. Apart the substrates mentioned, …

Universal Short-Circuit And Open-Circuit Fault Detection For An Inverter, Buck Brown

All Theses

Short-circuit and open-circuit faults of an inverter’s power device often lead to catastrophic failure of the entire system if not detected and acted upon within a few microseconds, particularly for emerging wide bandgap (WGB) power semiconductors. While a significant amount of research has been done on the fast and accurate protection and detection of short-circuit faults, there has been less success corresponding to the research on open-circuit faults. Common downfalls include protection and detection that are too application-specific, take longer than a couple of microseconds, and are not cost-efficient. This study proposes a new open-circuit fault protection and detection system …

Iii-Nitride Triangular Microcantilevers For Multimodal Sensing Applications, Balaadithya Uppalapati

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Micro-electromechanical systems (MEMS)-based sensors have gained significant attention due to their ability to sense, measure, and process various physical, chemical, and biological parameters. The small size of MEMS sensors provides numerous advantages, including low power consumption, high sensitivity, and rapid response time, making them suitable for various applications in healthcare, automotive, aerospace, and consumer electronics.

In the past few years, AlGaN/GaN MEMS devices have been found to offer several advantages over silicon-based MEMS devices. One of the main advantages of AlGaN/GaN MEMS is their high sensitivity to surface stresses and forces due to their high piezoelectric coefficients. This sensitivity allows …

Synthesis And Characterization Of Vo2 Thin Films On Piezoelectric Substrates, Samee Azad

All Theses

Polycrystalline VO₂ thin films synthesized on two piezoelectric substrates (AT-cut quartz and GaN/AlGaN/GaN/Si) using low pressure direct oxidation technique have been characterized and compared to VO₂ grown on traditional non-piezoelectric substrates sapphire and SiO₂/Si. X-ray diffraction and atomic force microscopy characterization performed on the as grown films confirmed high quality of the VO₂ films grown on both the piezoelectric and non-piezoelectric substrates. Changes in material properties associated with the semiconductor metal transition (SMT) of the VO₂ films were investigated through resistivity and transmitted optical power changes measured across the SMT. It was observed that …

Enhancing The Performance Of Poly(3-Hexylthiophene) Based Organic Thin-Film Transistors Using An Interface Engineering Method, Eyob Negussie Tarekegn

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An original design and photolithographic fabrication process for poly(3-hexylthiophene-2, 5-diyl) (P3HT) based organic thin-film transistors (OTFTs) is presented. The structure of the transistors was based on the bottom gate bottom contact OTFT. The fabrication process was efficient, cost-effective, and relatively straightforward to implement. Current–voltage (I-V) measurements were performed to characterize the primary electronic properties of the transistors. The measured mobility of these transistors was significantly higher than most results reported in the literature for other similar bottom gate bottom contact P3HT OTFTs. The higher mobility is explained primarily by the effectiveness of the fabrication process in keeping the interfacial layers …

Design Of Arbitrary Planar Optical Devices With Full Phase Control Using Nanoimprinting Of Refractive Index, Matthew Panipinto

All Theses

Planar optical devices offer a lightweight solution to the constraints found in traditional optical devices. While subwavelength patterning of optics offers attractive performance and size, traditional fabrication methods demand a trade-off between resolution and throughput that presents a significant hurdle for the widespread use of subwavelength devices. Nanoimprinting of refractive index (NIRI) is a novel fabrication method pioneered in previous work that offers promise in mitigating the throughput issues that hamstring traditional fabrication methods. However, NIRI has not been shown to impart full $2\pi$ phase control in planar optical devices, nor has a method for fabricating arbitrary designs using the …

Sub-Bandgap Photon-Assisted Electron Trapping And Detrapping In Algan/Gan Heterostructure Field-Effect Transistors, Andrew Gunn

All Theses

We have investigated photon-assisted trapping and detrapping of electrons injected from the gate under negative bias in a heterostructure field-effect transistor (HFET). The electron injection rate from the gate was found to be dramatically affected by sub-bandgap laser illumination. The trapped electrons reduced the two-dimensional electron gas (2DEG) density at the AlGaN/GaN heterointerface but could also be emitted from their trap states by sub-bandgap photons, leading to a recovery of 2DEG density. The trapping and detrapping dynamics were found to be strongly dependent on the wavelength and focal position of the laser, as well as the gate bias stress time …