Electronic Devices and Semiconductor Manufacturing Commons^™

Optical And High Electric Field Effects In Bulk Gallium Arsenide Switches, Randy Roush

Electrical & Computer Engineering Theses & Dissertations

During the past few years, bulk, photoconductive switching has become recognized as a viable topic for future research on moderate and high power switches. The two-pulse, or BOSS, concept relies on an excitation laser pulse, and a separate de-excitation pulse in conjunction with silicon doped, copper compensated, GaAs to create a variable temporal electrical pulse width. The research contained in this document provides information concerning the feasibility of the BOSS concept, as the switch is scaled to larger sizes, and higher voltage and current. The major concern will be the high voltage and current effects. The absorption length for 1064 …

Deep Level Characterization Studies In Gaas, Gordhan R. Barevadia

Electrical & Computer Engineering Theses & Dissertations

The goal of this research was to investigate deep levels in different types of GaAs, a material for high power optically controlled bulk semiconductor switches. For low resistivity semiconductors, such as silicon doped GaAs material (p =0.054 Ω cm), deep level transient spectroscopy (DLTS) was used to characterize deep levels. Three deep levels (EL6, EL3, and EL2) have been detected in this material. For high resistivity semiconductors (p > 10⁴ Ω cm), difficulty of electrical carrier injection and of making a junction does not permit the use of DLTS technique. Therefore, an experimental set-up of the photo-induced current transient spectroscopy …

Analysis And Development Of A Switched Capacitor Power Supply, John Richard Hackworth

Electrical & Computer Engineering Theses & Dissertations

The combination of a switched capacitor network and switching power supply techniques can result in a transformer less regulated DC power supply that is small, relatively simple, and efficient. In addition, the output of such a system could be operated over a wide range of common mode voltages. Multiple switched capacitor supplies could be stacked to achieve voltage multiplication.

Although the output of a system of this type is a continuous function, the internal operation must be analyzed in finite time elements. This numerical analysis will be shown in both a mathematical approach and a computer model.

Hydrogenation Effects On Trap Related Conduction In Diamond, Linwood Cleveland Watkins Iii

Electrical & Computer Engineering Theses & Dissertations

In this research work, the results of an experimental investigation on the electrical conduction mechanism in type Ιa and Ilb diamonds are presented. These results are compared with those of previous theoretical studies. The basic physical properties of diamond are discussed. Details of ohmic contact formation on diamond are presented.

The current-voltage characteristics revealed the presence of traps located below the Fermi level. The unfilled trap density was determined. The deep traps were further studied using spectroscopic photoconductivity measurements and the trap energy levels were determined.

The effects of hydrogenation on trap related conduction were studied subsequently. Hydrogenation was carried …

Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola

Electrical & Computer Engineering Faculty Publications

The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (N_Cu/N_Si) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.

The Electrical Characteristics Of Semi-Insulating Gallium Arsenide A Material For High Power Switches, David Clifton Stoudt

Electrical & Computer Engineering Theses & Dissertations

An experimental study of the electrical characteristics of semi-insulating gallium arsenide has been performed. The goal of this research was to aid in the development of an electron-beam controlled high-power semiconductor switch. The electrical characteristics were found to be heavily dependent on the deep level configuration of the material being investigated. Two methods of deep level characterization are discussed and their results are compared to the information given by the material manufacturer. Studies were conducted to determine both the steady-state and transient dark current characteristics of the switch. Along with being a function of the applied voltage and the deep …

Study Of Direct Semiconductor Materials For An Optically Controlled Switch, Sung Taek Ko

Electrical & Computer Engineering Theses & Dissertations

A model for a bulk GaAs photoconductive switch has been developed and solved to determine the performance of the device in closing and opening switch applications. The GaAs material has been characterized by deep level transient spectroscopy (DLTS). Two electron traps (EL2 and EL5) and one hole trap (Cu_B} have been detected and were included in the model. Simulation studies are performed on several GaAs switch systems composed of different combinations and density of deep levels to investigate the influence of deep traps in a photoconductive switch system. The electron occupancy of each deep trap is traced in …

Integrated Circuits Interconnect Metallization For The Submicron Age, Kamesh V. Gadepally, Roger M. Hawk

Journal of the Arkansas Academy of Science

The interconnect metallization being used by the semiconductor industry has been aluminum or aluminum silicon. Aluminum silicon is being replaced by aluminum copper and aluminum copper silicon, due to its superior resistance to electromigration and hillock growth. This paper discusses the implementation of aluminum copper/silicon alloys in semiconductor processing, along with a review of the problems and advantages of the same.

Design Of The Electronics And Optics Needed To Support Charge-Coupled Devices : A Project Report ..., Kah Yep Zee

University of the Pacific Theses and Dissertations

Over the last five years, charge-coupled devices (CCD) have been improved dramatically in terms of sensitivity, manufacturability and particularly, cost. This has enabled them to be used economically in many more industrial and commercial electronic imaging processes. They are found in products ranging from video cameras to satellite-based camera systems. This has sparked my interests in these devices, and with a great deal of encouragement from Dr. Turpin, I decided to base my Master's thesis/project on a CCD. The project was mainly based on the design of the electronics and optics needed to support a CCD. The particular circuit design …

Nanosecond Optical Quenching Of Photoconductivity In A Bulk Gaas Switch, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, S. T. Ko

Electrical & Computer Engineering Faculty Publications

Persistent photoconductivity in copper-compensated, silicon-doped semi-insulating gallium arsenide with a time constant as large as 30 µs has been excited by sub-band-gap laser radiation of photon energy greater than 1 eV. This photoconductivity has been quenched on a nanosecond time scale by laser radiation of photon energy less than 1 eV. The proven ability to turn the switch conductance on and off on command, and to scale the switch to high power could make this semiconductor material the basis of an optically controlled pulsed-power closing and opening switch.

Gaas Photoconductive Closing Switches With High Dark Resistance And Microsecond Conductivity Decay, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, R. Germer, G. M. Loubriel, F. J. Zutavern

Electrical & Computer Engineering Faculty Publications

Silicon-doped n-type gallium arsenide crystals, compensated with diffused copper, were studied with respect to their application as photoconductive, high-power closing switches. The attractive features of GaAs:Cu switches are their high dark resistivity, their efficient activation with Nd:YAG laser radiation, and their microsecond conductivity decay time constant. In the authors' experiment, electric fields are high as 19 kV/cm were switched, and current densities of up to 10 kA/cm² were conducted through a closely compensated crystal. At field strengths greater than approximately 10 kV/cm, a voltage `lock-on' effect was observed.

A Bulk Optically Controlled Semiconductor Switch, Rudolf K.F. Germer, Karl H. Schoenbach, Stephen G.E. Pronko

Bioelectrics Publications

Turn‐on and turn‐off of bulk semiconductor switches, based on excitation and quenching of photoconductivity, respectively, have been demonstrated with copper‐doped II‐VI semiconductor crystals. The increase of the conductivity (turn‐on) was realized with a xenon flash‐lamp pulse of 15‐μs duration. A reduction of the conductivity (turn‐off) was obtained by irradiating the samples with IR light using an 8‐ns Nd:YAG laser pulse (YAG denotes yttrium aluminum garnet). For turn‐on in CdS:Cu the conductivity follows the xenon flash excitation. The turn‐off time constant was 250 ns. ZnS and ZnSe crystals showed a slower response. A memory effect for the IR light was observed.

An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko

Electrical & Computer Engineering Faculty Publications

A concept for a bulk semiconductor switch is presented, where the conductivity is increased and reduced, respectively, through illumination with light of different wavelengths. The increase in conductivity is accomplished by electron ionization from deep centers and generation of bound holes. The reduction of conductivity is obtained by hole ionization from the excited centers and subsequent recombination of free electrons and holes. The transient behavior of electron and hole density in a high power semiconductor (GaAs:Cu) switch is computed by means of a rate equation model. Changes in conductivity by five orders of magnitude can be obtained.

An Investigation Of The Uses Of Scanning Electron Microscopy In The Analysis Of The Substructure Morphology Of Semiconducting Devices, Michael E. Courbat

Graduate Research Papers

The purpose of this study is to determine the technical requirements of SEM failure analysis in regard to its' inclusion in the Energy and Power curriculum of the Department of Industrial Technology, University of Northern Iowa.

Evidence For Amphoteric Behavior Of Ru On Cdte Surfaces, D. N. Bose, S. Basu, K. C. Mandal, D. Mazumdar

Faculty Publications

No abstract provided.

Electrical And Structural Properties Of P-N Junctions In Cw Laser Annealed Silicon, M. Maier, D. Bimberg, G. Fernholz, H. Baumgart, F. Phillipp

Electrical & Computer Engineering Faculty Publications

Depth profiles of the electrical quality of ion implanted and cw laser annealed p-n junctions in silicon are obtained for the first time by secondary ion mass spectroscopy. A comparison with the crystallographic properties of the surface and the junction as observed by Nomarski optical microscopy as well as cross-sectional and plan view transmission electron microscopy is made. Samples containing slip dislocations show better insulation and a lower reverse bias current across the p-n junction as compared to samples with a perfect surface in agreement with current-voltage characteristics. Small dislocation loops located at the junction are found to degrade the …

Photo And Magnetic Gated Bi-Directional Counter, Charles Burdette Kraemer

Graduate Research Papers

The purpose of this study is to investigate digital counter circuitry, digital logic, and some special applications of digital display systems. The technical data and information ascertained from the research will be used to design and develop a four-digital counter with photo and magnetic gated inputs.

A Study Of Thin-Film Superconducting Junctions, William P. Korink

Electrical & Computer Engineering Theses & Dissertations

The information presented in this paper is the result of research conducted toward the development. of a reproducible thin-film superconducting junction. The results of this experimentation and the equipment and procedures used are provided.

A qualitative explanation is given for the theory used in the derivation of the volt-ampere characteristics of thin-film superconducting junctions of metal-insulator- metal construction. This explanation entails the electron flow through the insulating layer through the use of the Fermi-Dirac and density of states functions.

The theoretical investigation is based on the BCS Theory and results in volt-ampere characteristics that agree very well with published experimental …

Random Wave Form Generator, Zaboj V. Harvalik

Journal of the Arkansas Academy of Science

No abstract provided.

A Study Of The Plating Prohibitive Properties Of Various Separators, Bruno J. Pozorski

Bachelors’ Theses

The problem of this thesis is to study the plating prohibitive properties of the various materials commonly used in the manufacturing of separators, and to indicate which material would be most serviceable and feasible in a separator. At one time positives and negatives were kept not more than 0.25 inches apart, with the idea of reducing the intervening layers of electrolyte, and, therefore, the internal resistance of the cell, as much as possible. It was, however, found that the output could actually be increased by putting the plates at greater distances, the fact being that the larger bulk of solution …

Evolution Of The Dynamo, Ralph Nelson Soule

Student and Lippitt Prize Essays

This essay supplies an extensive history of electricity beginning in 600 BC to 1900, chronicling the evolution of the dynamo and its uses.