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Articles 1 - 18 of 18
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Design Of A Bandgap Voltage Reference, Nicolaus Vail
Design Of A Bandgap Voltage Reference, Nicolaus Vail
Electrical Engineering Undergraduate Honors Theses
This thesis details the design process of a bandgap voltage reference (BGR) integrated circuit in a 180 nm CMOS process. A BGR provides a constant DC voltage across a range of operating temperatures and supply voltages. By its nature, the circuit is intended as a reference, not to provide current, so the output would be connected to a very high impedance, such as the gate of a transistor. At 27°C, this design provides a 955 mV reference voltage given a nominal VDD of 3 V. From 20°C to 175°C, the output voltage has a variance of 7.2 mV (approximately 0.8%) …
Transimpedance Amplification Of Optocoupler Output For High Temperature Applications, Kara Maurer
Transimpedance Amplification Of Optocoupler Output For High Temperature Applications, Kara Maurer
Electrical Engineering Undergraduate Honors Theses
When looking to the future of electronics, one characteristic is becoming more lucrative: high temperature capabilities. With the goals of not only becoming more efficient electronically, spatially, and cost-wise, adapting electronics for a high temperature environment can potentially be a route to all three of these goals. Not only does it take away the need for a cooling method, but it can also increase the longevity of a product which can make it even more cost effective. In an effort to contribute to the push for high temperature electronics, the University of Arkansas is developing a high temperature power module …
Optoelectronic Valley-Spin Qubits With Ambipolar Quantum Dots, Jeremy Tull
Optoelectronic Valley-Spin Qubits With Ambipolar Quantum Dots, Jeremy Tull
Electrical Engineering Undergraduate Honors Theses
The current limitations of qubit-based processors are caused by imperfections in quantum gates, leading to a lack of gate fidelity. Gate fidelity can be refined by extending the coherence of qubits and reducing logic operation speed. A potential solution is to develop a hybrid qubit that has the coherence of electrically-controlled quantum dots and the gate speed of their optically-controlled counterparts. Quantum bits that utilize ultrafast optical gating to perform gate operations require precise control of the gating pulse duration. Optical dispersion can cause adverse effects pulse duration, such as pulse broadening, so dispersion-compensation techniques must be employed; by properly …
Design And Fabrication Of A Microstrip Bandpass Filter In Ltcc, Allison Rucker
Design And Fabrication Of A Microstrip Bandpass Filter In Ltcc, Allison Rucker
Electrical Engineering Undergraduate Honors Theses
The goal of the project was to design and fabricate a bandpass filter with a center frequency of 25GHz with a 2GHz bandwidth. The first step was to do the calculation to design a bandpass filter to meet these specifications along with the properties of the DupontTM GreenTapeTM 9K7. HFSS was then used to verify the results from the initial calculations. There was a significant error between the two results, so more tweaking was done to the calculations to get a better center frequency. After a final design was decided, the fabrication process started. Low-Temperature Co-Fired Ceramics (LLTC) …
Effect Of Silicon Carbide On Electric Drivetrains Of Heavy-Duty Vehicles, Haley Solera
Effect Of Silicon Carbide On Electric Drivetrains Of Heavy-Duty Vehicles, Haley Solera
Electrical Engineering Undergraduate Honors Theses
The application of electro-mechanical motors in rigorous, high-temperature systems is constantly adapting to suit the growing needs of developers in the automotive, construction, and aerospace industries. With improved efficiency, torque, and environmental impact over conventional internal combustion engines, electric drive trains pose more than ample incentive for manufacturers to invest considerable resources toward the design of newer, better methods of electric propulsion. This paper discusses the motives behind the electrification of heavy-duty vehicles, the state-of-the-art technology currently available on the market, and the novel application of silicon carbide to electric drive trains as a means of increasing their heat tolerance, …
Reducing Emi In Sic Direct Torque Controlled Motor Drive, Michael Sykes
Reducing Emi In Sic Direct Torque Controlled Motor Drive, Michael Sykes
Electrical Engineering Undergraduate Honors Theses
This paper covers the comparison between Silicon (Si) vs Silicon Carbide (SiC) for Motor Drive systems and a possible control algorithm to limit the increased Electromagnetic Interference (EMI) caused by using SiC transistors for the inverter. Motor Drive systems need constant improvements if the world is going to move on from machines that emit CO2 and other harmful gases into the Earth’s atmosphere. One reason these electric machines are not commonplace today is because of their efficiency and other problems they may cause. Silicon transistors are the most commonplace transistor around the world today, but advances over the past …
Simultaneous Ohmic Contacts To N And P-Type Silicon Carbide For Future Electric Vehicles, Hayden Hunter
Simultaneous Ohmic Contacts To N And P-Type Silicon Carbide For Future Electric Vehicles, Hayden Hunter
Electrical Engineering Undergraduate Honors Theses
The paper explores possible metallization schemes to form simultaneous ohmic contacts to n-type and p-type silicon carbide contacts. Silicon carbide has shown promise in revolutionizing the power electronics market due to its increased switching speed, compact design, and higher temperature tolerance when compared to Silicon, the market standard. With the continuing development of silicon carbide technology, higher efficiency in future electric vehicles can be achieved by employing this new technology. This paper discusses theoretical contact formation between metals and semiconductors along with a proposed experiment to create a Ni/Al metallization scheme on both n and p-type contacts simultaneously on a …
Ohmic Contact Metallization For Silicon Carbide In Future Transportation And Aviation Systems, Tanner W. Rice
Ohmic Contact Metallization For Silicon Carbide In Future Transportation And Aviation Systems, Tanner W. Rice
Electrical Engineering Undergraduate Honors Theses
This paper analyzes metallization stacks in both n-type and p-type used in Silicon Carbide to create Ohmic Contacts. Silicon Carbide has shown its significance in usage as a semiconductor in high temperatures, and other extreme environments compared to its silicon counterpart. Additionally, silicon carbide exhibits many other favorable attributes such as strong radiation hardness, high power capability, and high-temperature tolerance. These attributes translate into great components for use in aviation and other future transportations by increasing reliability in a sector that already requires high reliability. Applications of this material could prove useful in fields such as aviation, among others. This …
Characterization Of High Temperature Optocoupler For Power Electronic Systems, David Gonzalez
Characterization Of High Temperature Optocoupler For Power Electronic Systems, David Gonzalez
Electrical Engineering Undergraduate Honors Theses
High-temperature devices have been rapidly increas due to the implementation of new technologies like silicon carbide, high-temperature ceramic, and others. Functionality under elevated temperatures can reduce signal integrity reducing the reliability of power electronic systems. This study presents an ongoing research effort to develop a high-temperature package for optocouplers to operate at higher temperature compared with commercial devices. Low temperature co-fired ceramic (LTCC) was used as the substrate. Bare die commercial LED and photodetectors were attached to the substrate and tested for functionality. Preliminary results show enhanced performance at elevated temperatures compared to a commercial optocoupler device.
High Temperature Wide Bandgap Light Emitting Diodes For Harsh Environment Applications, Stephanie Sandoval
High Temperature Wide Bandgap Light Emitting Diodes For Harsh Environment Applications, Stephanie Sandoval
Electrical Engineering Undergraduate Honors Theses
The need for high temperature, high power density power modules for applications such as electric vehicles and space exploration has driven the research into wide bandgap LEDs due to their potential operation at elevated temperatures. Wide bandgap LEDs offer an attractive solution due to properties such as high temperature tolerance, strong radiation hardness and good thermal conductivity. In this thesis, the electrical properties of GaN-on-SiC heterojunctions are studied as a precursor to an LED study, and the optical characterization of an InGaN/GaN MQW is reported. The GaN-on-SiC study revealed that these wide bandgap LEDs have linear sensitivity at high temperatures. …
Development Of Intermediate Band Solar Cell Through Ingan Quantum Well Structures, Kelly Mckenzie
Development Of Intermediate Band Solar Cell Through Ingan Quantum Well Structures, Kelly Mckenzie
Electrical Engineering Undergraduate Honors Theses
In the search for high-efficiency solar cells, InxGa1-xN has come under scrutiny as a unique material with high potential. This is due to characteristics including an easily tunable bandgap, large range of potential bandgap values, and high heat resistance. However, one factor limiting its adaptation is the high density of crystal defects. In this thesis, the qualities of InGaN are discussed and the intermediate band solar cell structure is introduced. Additionally, the growth and characterization of two sets of InGaN-based solar cell devices are reported and evaluated.
Smart Gate Driver Design For Silicon (Si) Igbts And Silicon-Carbide (Sic) Mosfets, Abdulaziz Alghanem
Smart Gate Driver Design For Silicon (Si) Igbts And Silicon-Carbide (Sic) Mosfets, Abdulaziz Alghanem
Electrical Engineering Undergraduate Honors Theses
The design of an efficient and smart gate driver for a Si IGBT and SiC MOSFET is addressed in thesis. First, the main IGBT parameters are evaluated thoroughly in order to understand their effects in the design of the gate driver. All known consequences of previously designed gate drivers are studied in order to achieve an optimum gate driver. As a result of this assessment, the designer is able to determine whether adding or removing components from the gate driver circuit are beneficial or not. Then, exhaustive research is done to identify suitable integrated circuits to use for the power …
Design Of Integrated Current Reference Circuits For A 180-Nanometer Bicmos Silicon Process, Timothy Max Megee
Design Of Integrated Current Reference Circuits For A 180-Nanometer Bicmos Silicon Process, Timothy Max Megee
Electrical Engineering Undergraduate Honors Theses
The goal of this thesis is to provide design analysis, simulation results, and physical layout structure for three current references that are to be physically fabricated in a 180- nanometer BICMOS silicon process. The report briefly discusses the need for voltage and current references in analog circuit applications, before zooming in to examine three topologies being tailored to the needs of an integrated solar micro-inverter system. These topologies are: proportional to absolute temperature (PTAT), complementary to absolute temperature (CTAT), and constant across temperature (Constant) bias circuits. First, each topology is designed schematically to meet the needs of the micro-inverter system. …
Spice Netlist Generation For Electrical Parasitic Modeling Of Multi-Chip Power Module Designs, Peter Tucker
Spice Netlist Generation For Electrical Parasitic Modeling Of Multi-Chip Power Module Designs, Peter Tucker
Electrical Engineering Undergraduate Honors Theses
Multi-Chip Power Module (MCPM) designs are widely used in the area of power electronics to control multiple power semiconductor devices in a single package. The work described in this thesis is part of a larger ongoing project aimed at designing and implementing a computer aided drafting tool to assist in analysis and optimization of MCPM designs. This thesis work adds to the software tool the ability to export an electrical parasitic model of a power module layout into a SPICE format that can be run through an external SPICE circuit simulator. The code was implemented in python using NetworkX graphs …
Showcase For The Advantages Of Asynchronous Vs. Synchronous Circuits, Justin Roark
Showcase For The Advantages Of Asynchronous Vs. Synchronous Circuits, Justin Roark
Electrical Engineering Undergraduate Honors Theses
Synchronous circuits dominate the semiconductor industry, but asynchronous circuitry is becoming more popular and will continue to do so, as evidenced by the International Technology Roadmap for Semiconductors. Asynchronous circuits, when compared to synchronous circuits, display tolerance to supply voltage and temperature variation. The goal of this project is to demonstrate these two advantages. The project will compare two microcontrollers, a synchronous 8051 and an asynchronous 8031, which will both play a song under various stresses. Note that an 8031 and 8051 are the same, except for the 8051 includes an on-chip instruction memory, whereas the 8031's is off-chip. When …
Low Voltage, Low Power, Bulk-Driven Amplifier, Shama Huda
Low Voltage, Low Power, Bulk-Driven Amplifier, Shama Huda
Electrical Engineering Undergraduate Honors Theses
The importance of low voltage and low powered electronics is increasing with advances in medical electronics. This branch of electronics specifically requires low voltage and low power to make efficient innovative medical equipment. Low power electronics are also desirable because it conserves energy and power. This paper proposes a design of a differential in - differential our amplifier that uses a bulk-driven differential pair for the input pair. In addition, it also used bulk-driven current mirrors for the tail current sink and the active loads. The bulkdriven technique helps to achieve the low voltage design. 90nm CMOS technology was considered …
A Timer Module For An 8051 Microcontroller, Troy England
A Timer Module For An 8051 Microcontroller, Troy England
Electrical Engineering Undergraduate Honors Theses
A timer module for an 8051 Microcontroller is designed from the ground up. It could potentially be integrated into a larger 8051 for use in lunar and Martian missions. It follows through a synchronous digital design flow from HDL code through layout verification. The timer shows functionality at 100MHz with some minor glitches.
Measurement Of Absolute Argon Excited State Populations And Electron Energy Distribution Functions In An Ar-A-Si Plasma, Katherine Herring
Measurement Of Absolute Argon Excited State Populations And Electron Energy Distribution Functions In An Ar-A-Si Plasma, Katherine Herring
Electrical Engineering Undergraduate Honors Theses
Deposition systems utilizing plasma are used for a variety of tasks, including tool coatings and creating thin-film materials. In order to have repeatable results, the internal conditions of a plasma chamber need to be known. This project centered on the use of data from optical emissions and a Langmuir probe from an argon plasma amorphous silicon depositing system. An electron energy distribution function (EEDF) was obtained from manipulation of the Langmuir probe data. This EEDF was then input to an argon collisional-radiative model (CRM) to obtain the electron population of the 4p level of the argon plasma. Through an absolute …