Electronic Devices and Semiconductor Manufacturing Commons^™

The Efficacy Of Programming Energy Controlled Switching In Resistive Random Access Memory (Rram), David Malien Nminibapiel

Electrical & Computer Engineering Theses & Dissertations

Current state-of-the-art memory technologies such as FLASH, Static Random Access Memory (SRAM) and Dynamic RAM (DRAM) are based on charge storage. The semiconductor industry has relied on cell miniaturization to increase the performance and density of memory technology, while simultaneously decreasing the cost per bit. However, this approach is not sustainable because the charge-storage mechanism is reaching a fundamental scaling limit. Although stack engineering and 3D integration solutions can delay this limit, alternate strategies based on non-charge storage mechanisms for memory have been introduced and are being actively pursued.

Resistive Random Access Memory (RRAM) has emerged as one of the …

Modeling Leakage Currents In Metal Insulator Metal Structures With High K Materials, Priyamvada Maleeswaran

Electrical & Computer Engineering Theses & Dissertations

Various products such as personal computers, cellular phones and mobile devices require high speed and low power consumption. Such improvements have been attained by minimizing physical dimensions of electronic devices, leading to high density integration of transistors and capacitors on integrated chips (]Cs). However, as a consequence of down-scaling device dimensions, tunneling of electrons through thin gate oxides (SiO₂) increases, leading to increased static power leakage. This constitutes wastage in power, and for the case of memory applications necessitates faster refresh cycles. In order to overcome such issues, high-k materials (such as HfO₂ and ZrO₂) …

A Systematic Study On Structural And Optical Properties In Conjugated Polymer Photovoltaic Devices, Sri Sabarinadh Sunkavalli

Electrical & Computer Engineering Theses & Dissertations

Conjugated polymer/fullerene based solar cells represent an exciting alternative to inorganic ones because of their low production costs, flexibility and low weight. At present, commercialization of organic photovoltaic (OPV) cells is limited due to their relatively low efficiency in comparison to silicon ones. In order to understand the operation of OPV cells and to increase their efficiency, more information about the structure of the absorber layer is needed. In particular, the connection between structure and properties of the absorber layer is of great importance. Performance of bulk heterojunction organic solar cells based on poly (3-hexylthiophene) as donor and a soluble …

Band Gap Engineering Of Two Dimensional Silicon Photonic Crystals By Oxidation And Oxide Etching, Makhin Thitsa

Electrical & Computer Engineering Theses & Dissertations

In this thesis a thorough analysis is presented on the effects of oxidation and oxide etching on the band structure of two dimensional silicon photonic crystals (2 D Si PC's). By using the plane wave expansion method (PWM), two structures of triangular lattice, namely, air cylinders embedded in a silicon background and silicon cylinders embedded in an air background are modeled. The thesis focuses on triangular lattice arrangement because for certain parameter values such a lattice can give rise to absolute band gap, which prohibits the propagation of either transverse electric (TE) or transverse magnetic (TM) polarizations.

During oxidation three …

Characterization And Quantum Efficiency Validation Of Ingaas Linear Focal Plane Array, Christopher Salenga Garcia

Electrical & Computer Engineering Theses & Dissertations

A 1x1024 InGaAs linear hybrid focal plane array (FPA) with CMOS readout was characterized at room temperature to analyze its electrical and optical properties and to measure its performance parameters.

The most important parameter of an FPA is the gain constant K, which allows conversion of the FPA output measurement unit from digital counts into the number of generated signal electrons. For FPAs with CMOS readout, the commonly used meanvariance method for determining K often underestimates its value. A more reliable method for finding K is the photon transfer technique, which is developed for FPAs with CCD readout. This …

Monte Carlo Simulation Analysis Of Electron Bombardment Of Gallium Nitride For Particle Detector Applications, James Gibson Bolitho

Electrical & Computer Engineering Theses & Dissertations

Gallium Nitride (GaN) is a relatively new and promising semiconductor material. It is finding its place in commercial applications such as transistors, light-emitting diodes, and in blue lasers. The large bandgap of GaN allows for very low canier densities and high breakdown voltages. This combination results in a greatly reduced background current and noise, and can withstand large applied voltages. In addition, GaN is sturdy and has strong mechanical properties. These are all ideal characteristics for application in high-energy particle detection.

In this thesis, the central goal is to assess the response of a GaN-based particle detector through numerical modeling. …

Monte Carlo Analysis Of Millimeter-Wave Gan Based Gunn Effect Oscillators, Sridhara Viswanadham

Electrical & Computer Engineering Theses & Dissertations

Gunn diodes are one of the most common high frequency solid-state oscillators at the present time, and are considered as promising devices for millimeter and submillimeter wave applications. Monte Carlo studies of Gunn diodes based on bulk wurtzite GaN have been carried out in this thesis research. Two structures have been examined: (i) devices with conventional single notch structure and (ii) repetitive structures with serial segments to fashion a "multiple domain" device. Wurtzite GaN has been chosen because of the high drift velocity and because analytical expressions for the band structure have recently become available. Performance parameters of interest such …

Evaluation Of Distributed Effects In Field Effect Transistors For High Frequency Applications, Srinivas Rowjee Cuddapah

Electrical & Computer Engineering Theses & Dissertations

Metal Semiconductor Field Effect Transistors are at the heart of currently used microwave and millimeter-wave devices. CAD (Computer Aided Design) models for MESFET are used in the development and optimization of high-speed microwave devices. The increase in the chip density demands more accurate models. A distributed small signal model was developed for a GaAs MESFET account of the high frequency effects.

The lumped model of the MESFET is inadequate at frequencies where the wavelength of operation approaches device dimensions. This is because different regions in the device can experience different amplitudes and phases of the biasing signal. In this thesis, …

Study Of Transport Properties Of Inas Using Monte Carlo Simulation, Satyanadh Gundimada

Electrical & Computer Engineering Theses & Dissertations

The present research is aimed at ascertaining the usefulness of InAs semiconductor material for single photon avalanche photo detectors operating in the Geiger mode at 2 μm wavelengths. InAs is considered as the material suitable for the purpose because of its less bandgap and lower effective mass of the electrons when compared to other semiconductor materials presently in use. Hence, theoretically transient transport properties of bulk InAs are superior and the velocity overshoot phenomena stronger. InAs is a relatively less explored material when compared to other materials like GaAs. The choice of the material is justified with thorough exploration of …

Phase-Sensitive Detection Electronics For Wavelength Modulation Spectroscopy Experiments, Tyrone Pate

Electrical & Computer Engineering Theses & Dissertations

Wavelength modulation spectroscopy (WMS) is a non-intrusive detection technique, which enables the measurement of several parameters such as pressure, concentration, and temperature of a species of interest by analyzing the latter's absorption lineshape profile. The method employs a synchronous modulation and detection apparatus to increase the signal to noise ratio and hence the sensitivity of the measurement. Phase-sensitive detection and demodulation of the signal is performed at the modulation frequency and its harmonics. Research at ODU demonstrates that each particular measurement can be performed optimally at an appropriate harmonic of the modulation frequency. The most suitable harmonic depends on many …

Theory Of Sic Schottky Barrier Conduction And Model Analysis For Diode Breakdown With And Without Screw Dislocations, Lifeng Zheng

Electrical & Computer Engineering Theses & Dissertations

Silicon Carbide is a very promising candidate for applications in high-power, high-temperature, and high-radiation conditions under which conventional semiconductors cannot perform adequately. However, the SiC processing technology has not yet reached maturity. There is also limited knowledge of its physical and chemical characteristics, and its device behavior is not well understood. The aim of this thesis is to analyze two specific problems in the SiC area. The first issue involves the large discrepancy between experimental I - V characteristics of SiC Schottky diodes and their theoretical values. The observed data, especially at low voltages, is found to be orders of …

Evaluation Of The Transport Properties Of Gasb For Bipolar Applications Through Monte Carlo Simulations, Damayanthi Palaniappan

Electrical & Computer Engineering Theses & Dissertations

GaAs is currently the semiconductor material of choice for high speed, low power applications. Its electronic transport properties are superior to almost all other semiconductors. It is also used in a variety of bipolar applications such as photodetectors and photo-mixers. However, as is well known, the hole mobility and related transport parameters of GaAs are not very good. This is a serious drawback, and poses a potential problem for all applications involving bipolar conductivity. In order to increase the high :frequency limits and high-speed capability of bipolar devices, the choice of an alternative material, therefore, becomes necessary. An important first …

Two-Dimensional Drift-Diffusion Simulations Of Silicon Avalanche Shaper (Sas) Devices For High Power Applications, Hamid Jalali

Electrical & Computer Engineering Theses & Dissertations

Silicon Avalanche Shaper devices have been projected as being important components of an inexpensive, semiconductor-based technology for high power switching applications. The primary advantage of this technology is that it is based on Silicon material which is easy to fabricate and has a well established processing technology. Unlike other high power technologies, the SAS devices do not rely on external optical triggering which eliminates the need for lasers and related optical circuitry.

The SAS based high power switching technology has been pioneered and tested by a Russian group. Though preliminary results have been very encouraging, the device reliability and its …

Electron Beam Emission From A Ferroelectric Cathode, Crystal Briana Garland

Electrical & Computer Engineering Theses & Dissertations

The electron beam emission from a LTZ-2 (lead titanate-zirconate) ferroelectric cathode was characterized. The purpose was to determine the operation range for this type of electron emitter. The experimental apparatus consisted of a high voltage driving circuit with a charging voltage up to 30kV. A solid-state SCR switch is used to generate the high voltage pulse which induces a polarization change. Current densities on the order of 80A/cm² 30kV were achieved. The electron beam profile is Guassian. At long anode-cathode distances the measured current densities were found to be above Child-Langmuir space charge limits. The large current densities and …

Wavelength Modulation Spectroscopy With Diode Lasers, Ying Lu

Electrical & Computer Engineering Theses & Dissertations

Wavelength Modulation Spectroscopy is a non-intrusive technique which enables several parameters such as concentration, velocity, and temperature of a target specie to be measured. The method involves a modulation of a probe laser beam and detection at the fundamental, or any harmonic frequency, by a phase-sensitive apparatus. The theory of wavelength modulation is discussed. Effects of the finite value of the wavelength modulation index, together with the effects of any residual amplitude modulation that often occurs simultaneously in a diode laser, are included. It is shown that there are several advantages in using detection harmonics orders greater than the second. …

The Current Voltage Characteristics Of Electron Beam Controlled Thin Film Diamond Switches, Christopher Anthony Molina

Electrical & Computer Engineering Theses & Dissertations

The dark current of natural diamond thin films and the induced current due to electron-beam irradiation was measured up to a range of 7000Ncm'. The contact material was aluminum, annealed and unannealed. Switching experiments were performed with electron energies ranging from 70keV to 172keV. The switching results obtained are strongly dependent on the biasing polarity, incident electron energy, and whether the contact is blocking or Ohmic in nature. A simple model which takes traps into consideration allows us to explain the various switching responses. The range of electrons which define, in part, the switch mode was measured for one sample …

Transient Simulations And Modelling Of Semi-Insulating Gaas Photoconductive Switches, Prasun Kumar Raha

Electrical & Computer Engineering Theses & Dissertations

The primary objective of this thesis is to develop a one-dimensional transient simulator for Photoconductive Semiconductor Switches (PCSS) taking into consideration the material characteristics, the internal physical effects, and the external circuit. Simulations have been performed to study the device behavior at different voltage levels for copper-doped silicon-compensated GaAs material, though other materials could easily be simulated by changing the parameters. The model includes hole transport, and the results demonstrate the effect of hole injection, with and without recombination centers. In addition to developing a one-dimensional transient simulator, the role of various physical effects, such as the field-dependence of trapping …

Optimization Of Electron-Beam Activated Gaas Switches, Raymond Jack Allen Iii

Electrical & Computer Engineering Theses & Dissertations

The use of electron induced luminescence (cathodoluminescence) in gallium arsenide offers the possibility to modulate the conductance of the material on a timescale of nanoseconds and with a pulse rate of MHz, through modulation of an electron-beam current. This ionization mechanism allows the utilization of semi-insulating GaAs in fast, high power closing and opening switches. The efficiency of the switches is determined by the hold-off voltage of the GaAs switches, and by the conversion efficiency of electron energy into (useful) photon energy. Studies of the dark-current and the electron-beam induced conductance in semi-insulating GaAs have been performed in order to …

Absorption Imaging Studies On Intrinsic Gaas, John Samuel Kenney

Electrical & Computer Engineering Theses & Dissertations

A diagnostic technique has been developed which allows recording of the temporal and spatial development of electric field structures in GaAs photoconductive switches. The optical method is based on the Franz-Keldysh effect. Measurements were performed with a Nd:YAG activation laser and a GaAs laser diode as the probe laser. At low applied voltages a 100 atm wide region of high electric field is seen at the cathode only. With increasing voltage strong domain like structures emerge at the anode also. A calibration measurement shows that the electric fields in these domains are well above 50 kV/cm. At a threshold voltage, …

The Effect Of Contacts On The Performance Of Electron-Beam Controlled Gaas And Diamond Switches, Michael Kevin Kennedy

Electrical & Computer Engineering Theses & Dissertations

The performance of GaAs and diamond as electron-beam controlled closing and opening switches has been studied. An emphasis has been placed on the effect of contacts on the current-voltage characteristics. The two materials studied were GaAs and diamond. Using the same semi-insulating GaAs wafer as a source of material, a bulk device and a p-i-n device have been fabricated and compared. The asymmetry of the pin diode allows operation at higher voltage because of the ability to suppress the lock-on effect. Whereas GaAs was ionized through cathodoluminescence; diamond, in the form of thin films, has been directly ionized by the …

A Novel Technique For Deep Level Characterization Of High-Resistivity Semiconductor Materials, Sridhar Panigrahi

Electrical & Computer Engineering Theses & Dissertations

An improved photo induced current transient spectroscopy (PICTS) technique is developed for studying deep level parameters in high-resistivity semiconductor materials. A new digital data acquisition approach and improvement in the cryogenics of the system have enabled us, for the first time in our laboratory, to detect CuA level in a copper doped silicon compensated gallium arsenide (GaAs:Si:Cu) sample. The digital approach improves both the signal to noise ratio (S/N) and the efficiency of the system. Also, multiple PICTS spectra in a single thermal cycle can be obtained. In the present work, various doped and undoped gallium arsenide ( GaAs) and …

Study Of Cathodoluminescence In Semiconductors, Mandakini V. Kale

Electrical & Computer Engineering Theses & Dissertations

Cathodoluminescence in Zn doped GaAs and ZnSe, the materials of interest for electron-beam controlled semiconductor switches, has been investigated. A new diagnostic technique, using telescopic setup of lenses, was developed to study the spatially resolved cathodoluminescence. The setup eliminated the light, other than rays from the sample, parallel to the optical axis, resulting in an enhanced spatial resolution. At high e-beam energies, light was detected, from the Zn layer region in the GaAs. It is proposed to be due to the radiative recombination of electron-hole pairs, created by the e-beam. For the polycrystalline ZnSe no light emission was detected. This …

Cathodoluminescence Of Gaas, Tyler Smith

Electrical & Computer Engineering Theses & Dissertations

Cathodoluminescence of band-gap radiation across the bulk of a proposed semiconductor switch has been studied. Such a device relies on the efficient use of cathodoluminescence to modulate the conductivity of the switch. Diagnostics were configured to measure the intensity of band-gap radiation across the bulk of several switch samples. The measured results were compared to calculations based on a four energy level band-gap model which included two deep levels EL2 and HL10.

Q Improvement Of A 5.2 Ghz Te011 Cavity By Incorporating Y1Ba2Cu3O7-X, R. Joseph Leclear

Electrical & Computer Engineering Theses & Dissertations

Research is undertaken to apply high temperature superconducting material to improve the quality factor (Q) of a 5.2 GHz cylindrical resonant cavity. In particular, the approach is to electrophoretically deposit polycrystalline Y₁Ba₂Cu₃O_7-x (YBCO) on the conducting surface of the cavity cylinder. Spalling of the YBCO ceramic coating due to expansion and contraction of the cavity during sintering and testing is overcome by segmenting the cylinder. Results show that the Q of the cavity is increased over that of a copper cavity at temperatures below 60 K. At 20 K, improvement exceeds a factor …

Monte Carlo Simulation Of Millimeter-Wave Gunn Effect Oscillators, Ramani Vaidyanathan

Electrical & Computer Engineering Theses & Dissertations

Monte Carlo simulations have been carried out to investigate the performance of microwave Gunn oscillators. Three separate aspects of the simulation problem have been comprehensively addressed in this work. First, the presence of an external circuit has been self-consistently incorporated into the calculations. The inclusion of the external circuit facilitates a study of the circuit controlled regime, and correctly models effects arising from the time dependent boundary conditions. Secondly, microscopic details of the electronic relaxation mechanisms which ultimately control the frequency response limits, have been taken into account through an iterative Monte Carlo-Poisson scheme. This procedure overcomes a potential shortcoming …

Optical And High Electric Field Effects In Bulk Gallium Arsenide Switches, Randy Roush

Electrical & Computer Engineering Theses & Dissertations

During the past few years, bulk, photoconductive switching has become recognized as a viable topic for future research on moderate and high power switches. The two-pulse, or BOSS, concept relies on an excitation laser pulse, and a separate de-excitation pulse in conjunction with silicon doped, copper compensated, GaAs to create a variable temporal electrical pulse width. The research contained in this document provides information concerning the feasibility of the BOSS concept, as the switch is scaled to larger sizes, and higher voltage and current. The major concern will be the high voltage and current effects. The absorption length for 1064 …

Deep Level Characterization Studies In Gaas, Gordhan R. Barevadia

Electrical & Computer Engineering Theses & Dissertations

The goal of this research was to investigate deep levels in different types of GaAs, a material for high power optically controlled bulk semiconductor switches. For low resistivity semiconductors, such as silicon doped GaAs material (p =0.054 Ω cm), deep level transient spectroscopy (DLTS) was used to characterize deep levels. Three deep levels (EL6, EL3, and EL2) have been detected in this material. For high resistivity semiconductors (p > 10⁴ Ω cm), difficulty of electrical carrier injection and of making a junction does not permit the use of DLTS technique. Therefore, an experimental set-up of the photo-induced current transient spectroscopy …

Analysis And Development Of A Switched Capacitor Power Supply, John Richard Hackworth

Electrical & Computer Engineering Theses & Dissertations

The combination of a switched capacitor network and switching power supply techniques can result in a transformer less regulated DC power supply that is small, relatively simple, and efficient. In addition, the output of such a system could be operated over a wide range of common mode voltages. Multiple switched capacitor supplies could be stacked to achieve voltage multiplication.

Although the output of a system of this type is a continuous function, the internal operation must be analyzed in finite time elements. This numerical analysis will be shown in both a mathematical approach and a computer model.

Hydrogenation Effects On Trap Related Conduction In Diamond, Linwood Cleveland Watkins Iii

Electrical & Computer Engineering Theses & Dissertations

In this research work, the results of an experimental investigation on the electrical conduction mechanism in type Ιa and Ilb diamonds are presented. These results are compared with those of previous theoretical studies. The basic physical properties of diamond are discussed. Details of ohmic contact formation on diamond are presented.

The current-voltage characteristics revealed the presence of traps located below the Fermi level. The unfilled trap density was determined. The deep traps were further studied using spectroscopic photoconductivity measurements and the trap energy levels were determined.

The effects of hydrogenation on trap related conduction were studied subsequently. Hydrogenation was carried …

The Electrical Characteristics Of Semi-Insulating Gallium Arsenide A Material For High Power Switches, David Clifton Stoudt

Electrical & Computer Engineering Theses & Dissertations

An experimental study of the electrical characteristics of semi-insulating gallium arsenide has been performed. The goal of this research was to aid in the development of an electron-beam controlled high-power semiconductor switch. The electrical characteristics were found to be heavily dependent on the deep level configuration of the material being investigated. Two methods of deep level characterization are discussed and their results are compared to the information given by the material manufacturer. Studies were conducted to determine both the steady-state and transient dark current characteristics of the switch. Along with being a function of the applied voltage and the deep …