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Electronic Devices and Semiconductor Manufacturing Commons™
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Articles 1 - 5 of 5
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Comprehensive Variable-Temperature Raman And Spectroscopic Ellipsometry Investigation Of Bulk Undoped, Fe-Doped, And Ge-Doped Gan: Correlated Phonon, Carrier, Optical, And Disorder Dynamics, Manika Tun Nafisa, Sm Atiqur Rahman, Zhe Chuan Feng, Sandip Das, James N. Hilfiker, Nina Jong, Ian T. Ferguson, Benjamin Klein
Comprehensive Variable-Temperature Raman And Spectroscopic Ellipsometry Investigation Of Bulk Undoped, Fe-Doped, And Ge-Doped Gan: Correlated Phonon, Carrier, Optical, And Disorder Dynamics, Manika Tun Nafisa, Sm Atiqur Rahman, Zhe Chuan Feng, Sandip Das, James N. Hilfiker, Nina Jong, Ian T. Ferguson, Benjamin Klein
Faculty Articles
Bulk gallium nitride (GaN) substrates with controlled electrical compensation and doping are foundational materials for high-power electronics, optoelectronics, and emerging spintronic devices. Despite extensive studies on epitaxial GaN thin films, a complete and correlated understanding of crystal, phonon, free-carrier, birefringence, optical, and disorder-driven processes in high-quality bulk GaN crystals remains limited. In this work, a comprehensive temperature-dependent (25–300 °C) investigation of free-standing bulk undoped, Fe-doped, and Ge-doped GaN substrates using Raman spectroscopy, spectroscopic ellipsometry (SE), and atomic force microscopy (AFM) has been presented. A detailed analysis of phonon evolution, apparent Raman-shift-derived biaxial stress and in-plane strain, longitudinal optical phonon–plasmon coupling …
Influence Of Al2o3 Passivation Layer Thickness On The Thermal Stability And Quality Of Mocvd-Grown Gan On Si, S M Atiqur Rahman, Manika Tun Nafisa, Zhe Chuan Feng, Benjamin Klein, Ian T. Ferguson
Influence Of Al2o3 Passivation Layer Thickness On The Thermal Stability And Quality Of Mocvd-Grown Gan On Si, S M Atiqur Rahman, Manika Tun Nafisa, Zhe Chuan Feng, Benjamin Klein, Ian T. Ferguson
Symposium of Student Scholars
This research delves into the significant impact of varying thicknesses of the Al2O3 passivation layer on the thermal stability and crystalline quality of GaN on Si structures, an essential aspect for the next generation of high-temperature electronic and optoelectronic devices. By adopting metal-organic chemical vapor deposition (MOCVD) for the growth process, we analyzed structures with different Al2O3 passivation layer thicknesses: none, 2 nm, 10 nm, and 20 nm, each built upon the GaN layer. Through Raman spectroscopy, we meticulously assessed the changes in the E2 (High) phonon mode's peak position and full width …
Semiconductor Devices, Sheila D. Hill Pe
Semiconductor Devices, Sheila D. Hill Pe
KSU Distinguished Course Repository
3 Class Hours, 0 Laboratory Hours, 3 Credit Hours Prerequisites: CHEM 1211, CHEM 1211L, EE 1000
This course effectively applies the knowledge of chemistry and physics to understand the operating principles of various semiconductor devices. The course covers topics starting from the fundamental concepts of atomic and crystal structure, crystal growth, impurity doping and energy bands to the in-depth device operation and quantitative analysis of p-n junction diode, metal-semiconductor contacts and Schottky diode, BJTs and MOSFETs. Also fundamental operating principles of optoelectronic devices such as, LEDs and photodiodes are discussed. Simple device simulation components reinforces the understanding of various critical …
Raman Scattering Measurements And Analyses Of Gan Thin Films Grown On Zno Substrates By Metalorganic Chemical Vapor Deposition, Zane Mcdaniel, Zhe Chuan Feng, Kevin Stokes
Raman Scattering Measurements And Analyses Of Gan Thin Films Grown On Zno Substrates By Metalorganic Chemical Vapor Deposition, Zane Mcdaniel, Zhe Chuan Feng, Kevin Stokes
Symposium of Student Scholars
Metalorganic chemical vapor deposition (MOCVD) is a popularly used method of growing thin films of GaN on ZnO (GZ) substrates, which pair well due to their structural and characteristic similarities. In this research, optical characterization of the surface quality of GZ sample films is measured by analyzing Raman scattering (RS) using a Renishaw inVia spectrometer fitted with a 532nm laser. Samples were grown in an improved double injection block rotating disc reactor. Multiple samples' spectra show broad peaks that correspond with the E2 (high) and A1 (LO) branches of GaN, and nicely fitted curves are observed for the characteristic E2 …
Enercon Station Vacuum Pump Replacement, Clint Hembree, Jared D'Amico, Connor Moore, Paul Jeffrey Fontenot, Sydnee Castello, J.J. Clements
Enercon Station Vacuum Pump Replacement, Clint Hembree, Jared D'Amico, Connor Moore, Paul Jeffrey Fontenot, Sydnee Castello, J.J. Clements
Senior Design Project For Engineers
This details the progress of the ENERCON pump replacement project as completed by the Kennesaw State University interdisciplinary senior design group. This project is a two-semester capstone effort for the engineering program at Southern Polytechnic School of Engineering, overseen by Dr. McFall during Fall 2020 and Dr. Khalid during Spring 2021 semesters. The 2020-2021 KSU Interdisciplinary Senior Design team was tasked with completing an Engineering Change Package (ECP) for existing vacuum pumps at ENERCON Station. The mechanical, electrical, and civil students worked together, performing evaluations on existing plant systems to ensure the plant could support the new vacuum pumps. By …