Electronic Devices and Semiconductor Manufacturing Commons^™

Quantum Mechanical Calculations Of Monoxides Of Silicon Carbide Molecules, John W. Roberts Jr.

Theses and Dissertations

Modern semiconductor devices are principally made using the element silicon. In recent years, silicon carbide (SiC), with its wide band-gap, high thermal conductivity, and radiation resistance, has shown prospects as a semiconductor material for use in high temperature and radiation environments such as jet engines and satellites. A limiting factor in the performance of many SiC semiconductor components is the presence of lattice defects formed at oxide dielectric junctions during processing. Recent theoretical work has used small quantum mechanical systems embedded in larger molecular mechanics structures to attempt to better understand SiC surfaces and bulk materials and their oxidation. This …

Stress Analysis Of Silicon Carbide Microeletromechanical Systems Using Raman Spectroscopy, Stanley J. Ness

Theses and Dissertations

During the fabrication of Micro-Electro-Mechanical Systems (MEMS), residual stress is often induced in the thin films that are deposited to create these systems. These stresses can cause the device to fail due to buckling, curling, or fracture. Government and industry are looking for ways to characterize the stress during the deposition of thin films in order to reduce or eliminate device failure. Micro-Raman spectroscopy has been successfully used to analyze poly-silicon MEMS devices made with the Multi-User MEMS Process (MUMPS trade name). Micro-Raman spectroscopy was selected because it is nondestructive, fast and has the potential for in situ stress monitoring. …

Total Dose Effects Of Ionizing And Non-Ionizing Radiation On Piezoresistive Pressure Transducer Chips, Samuel J. Willmon

Theses and Dissertations

The effects of ionizing and non ionizing radiation on the resistivity of silicon based, piezoresistive bulk micro-machined chips from pressure transducers were examined. Standard current-voltage (I-V) measurements were taken in-situ and post-irradiation during isothermal annealing at room temperature. One group of chips was irradiated to a maximum total gamma dose of lMrad(Si) in the 11,000 Ci (60) Co gamma cell at Ohio State University. The second group of chips was irradiated at the Ohio State University Research Reactor facility to a maximum total neutron dose of 4 Mrad(Si) using beam port Hi. The resistivity was shown to decrease during gamma …

Algan/Gan Heterostructure Field-Effect Transistors On Single-Crystal Bulk Aln, X. Hu, J. Deng, N. Pala, R. Gaska, M. S. Shur, C. Q. Chen, J. Yang, Grigory Simin, M. A. Khan, J. C. Rojo, L. J. Schowalter

Faculty Publications

We report on the performance of AlGaN/GaN/AlN heterostructurefield-effect transistors(HFETs) grown over slightly-off c-axis, single-crystal, bulk AlN substrates. Dc and rf characteristics of these devices were comparable to HFETs grown on semi-insulating SiC. The obtained results demonstrate that bulk AlN substrates are suitable for fabricating high-power microwave AlGaN/GaN transistors.

Photoimageable Material Patterning Techinques Useful In Fabricating Conductive Lines In Circuit Structures, P Moon, M Hussein, A Myers, C Recchia, S Sivakumar, A Kandas

Charles H Recchia

No abstract provided.

Design For Signal Integrity In High Frequency, High Density Circuit Boards, Juan Manuel Talavera Martinez

Theses

The electronics market is continually seeking fast and small high performance products. The clock frequency in computer systems is often above 2GHz and new generations of laptops have considerably reduced in size. These features make printed circuit board (PCB) design more difficult than in the past.

This thesis is an investigation of the current design of high speed PCB. The complexity of this type of circuit makes the designer needs an extensive knowledge of the techniques used to generate a reliable signalling, in other words, signal integrity. To achieve this objective, the design community has to overcome several problem related …