Singh Center for Nanotechnology
University of Arkansas, Fayetteville
California Polytechnic State University, San Luis Obispo
Marquette University
ETEP – Faculdade de Tecnologia de São José dos Campos, Brazil
Thermal Transport Across 2d/3d Van Der Waals Interfaces,
2023
University of Massachusetts Amherst
Thermal Transport Across 2d/3d Van Der Waals Interfaces
Doctoral Dissertations
Designing improved field-effect-transistors (FETs) that are mass-producible and meet the fabrication standards set by legacy silicon CMOS manufacturing is required for pushing the microelectronics industry into further enhanced technological generations. Historically, the downscaling of feature sizes in FETs has enabled improved performance, reduced power consumption, and increased packing density in microelectronics for several decades. However, many are claiming Moore's law no longer applies as the era of silicon CMOS scaling potentially nears its end with designs approaching fundamental atomic-scale limits -- that is, the few- to sub-nanometer range. Ultrathin two-dimensional (2D) materials present a new paradigm of materials science and …
Electrothermal Properties Of 2d Materials In Device Applications,
2023
University of Massachusetts Amherst
Electrothermal Properties Of 2d Materials In Device Applications, Samantha L. Klein
Masters Theses
To keep downsizing transistors, new materials must be explored since traditional 3D materials begin to experience tunneling and other problematic physical phenomena at small sizes. 2D materials are appealing due to their thinness and bandgap. The relatively weak van der Waals forces between layers in 2D materials allow easy exfoliation and device fabrication but they also result in poor heat transfer to the substrate, which is the main path for heat removal. The impaired thermal coupling is exacerbated in few-layer devices where heat dissipated in the layers further from the substrate encounters additional interlayer thermal resistance before reaching the substrate, …
Filmetrics Profilm3d (Met-05) Standard Operating Procedure,
2023
University of Pennsylvania
Filmetrics Profilm3d (Met-05) Standard Operating Procedure, David S. Barth
Standard Operating Procedures
Standard Operating Procedure for the Filmetrics Profilm3D Optical Profilometer/White Light Interferometer
Causes, Countermeasures And Enlightenment Of “Eu Semiconductor Crisis”: Interpretation Around The European Chips Act,
2023
Law School, Shanghai University, Shanghai 200444, China
Causes, Countermeasures And Enlightenment Of “Eu Semiconductor Crisis”: Interpretation Around The European Chips Act, Junfeng Li, Ying Zhang
Bulletin of Chinese Academy of Sciences (Chinese Version)
The European Union (EU) is one of the origins of the global semiconductor industry, but due to its structural defects in the semiconductor value chain, it has encountered a crisis of chip shortages and supply cuts since 2021. The European Chips Act drafted by EU proposes a path for semiconductor ecological construction, crisis intervention regulatory measures, and outlines a blueprint for a "national system for the chip industry with EU characteristics". These factors are of speculative significance and reference value for China to balance the relationship between the government and the market, subsidies and competition, key construction and inclusive support …
Strengthen Building Of Basic Reach Capacity For Semiconductor Research To Light Up “Beacon” Towards Realizing The Self-Reliance And Self-Improvement Of Semiconductors,
2023
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Strengthen Building Of Basic Reach Capacity For Semiconductor Research To Light Up “Beacon” Towards Realizing The Self-Reliance And Self-Improvement Of Semiconductors, Junwei Luo, Shushen Li
Bulletin of Chinese Academy of Sciences (Chinese Version)
No abstract provided.
Analysis On Bottleneck And Prospect Of Integrated Circuit Talent Training Oriented To Sci-Tech Self-Reliance And Self-Strengthening At Higher Levels,
2023
ICBC Postdoctoral Workstation, Beijing 100140, China
Analysis On Bottleneck And Prospect Of Integrated Circuit Talent Training Oriented To Sci-Tech Self-Reliance And Self-Strengthening At Higher Levels, Kaixuan Guan, Jiang Yu, Jianzhong Zhou, Feng Chen, Yan Han
Bulletin of Chinese Academy of Sciences (Chinese Version)
The most essential feature of building a new development paradigm is to achieve sci-tech self-reliance and self-strengthening at higher levels. The integrated circuit industry, as an important pillar to achieve this essential feature, is facing a severe external situation. China's chip shortage pain begins with a shortage of talents. The structural problem of uneven development at the overall level of the industry makes it more difficult to effectively gather and distribute talents. To achieve sci-tech self-reliance and self-strengthening at higher levels, we need to be both demand-oriented and problem-oriented, which means not only to pay attention to the core technology …
Heidelberg Dwl66+ Laser Writer (Lw-01) Standard Operating Procedure,
2023
University of Pennsylvania
Heidelberg Dwl66+ Laser Writer (Lw-01) Standard Operating Procedure, David J. Jones
Protocols and Reports
Standard operating procedure (SOP) for Heidelberg DWL66+ laser writer.
In-Field Solar Panel Assessment And Fault Diagnosis,
2023
American University in Cairo
In-Field Solar Panel Assessment And Fault Diagnosis, Muhammad Elgamal
Theses and Dissertations
Photovoltaic energy is a green energy that suit from small houses to high-power stations spanning large areas. In such large areas, monitoring individual panels can be a tedious task, especially if it was required to identify operational faults of these panels. Photovoltaic 4.0 technology depend on collecting data from each station and feeding them to a central processing system that can analyze operation data and hopefully locate when a fault happens. In such method, it is crucial to be accurate as much as possible and for measuring device to be accurate as well to have a clear judgement. In this …
Editorial,
2023
School of Information Technology, Illinois State University (ISU), Normal, IL.
Editorial, Sameeh Ullah Dr.
International Journal of Smart Sensor and Adhoc Network
This special issue seeks papers that provide a convergent research perspective on business futures, i.e., research that draws on many disciplinary views and strives to establish fresh integrative frameworks and vocabularies. Addressing the difficulty of work culture and intelligent machines in a broad sense necessitates grappling with complicated issues such as motivation, cognition, machine learning, human learning, and system design, among others.
Lesker Pvd75 E-Beam/Thermal Evaporator (Pvd-02) Standard Operating Procedure,
2023
University of Pennsylvania
Lesker Pvd75 E-Beam/Thermal Evaporator (Pvd-02) Standard Operating Procedure, David S. Barth, Jason A. Röhr
Standard Operating Procedures
Standard Operating Procedure for the Lesker PVD75 E-beam/Thermal Evaporator (PVD-02) located at the Quattrone Nanofabrication Facility within the Singh Center for Nanotechnology at the University of Pennsylvania
Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications,
2022
New Jersey Institute of Technology
Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula
Dissertations
Wide bandgap (WBG) semiconductors play a crucial role in the current solid-state lighting technology. The AlGaN compound semiconductor is widely used for ultraviolet (UV) light-emitting diodes (LEDs), however, the efficiency of these LEDs is largely in a single-digit percentage range due to several factors. Until recently, AlInN alloy has been relatively unexplored, though it holds potential for light-emitters operating in the visible and UV regions. In this dissertation, the first axial AlInN core-shell nanowire UV LEDs operating in the UV-A and UV-B regions with an internal quantum efficiency (IQE) of 52% are demonstrated. Moreover, the light extraction efficiency of this …
Enhancing The Performance Of Poly(3-Hexylthiophene) Based Organic Thin-Film Transistors Using An Interface Engineering Method,
2022
Clemson University
Enhancing The Performance Of Poly(3-Hexylthiophene) Based Organic Thin-Film Transistors Using An Interface Engineering Method, Eyob Negussie Tarekegn
All Dissertations
An original design and photolithographic fabrication process for poly(3-hexylthiophene-2, 5-diyl) (P3HT) based organic thin-film transistors (OTFTs) is presented. The structure of the transistors was based on the bottom gate bottom contact OTFT. The fabrication process was efficient, cost-effective, and relatively straightforward to implement. Current–voltage (I-V) measurements were performed to characterize the primary electronic properties of the transistors. The measured mobility of these transistors was significantly higher than most results reported in the literature for other similar bottom gate bottom contact P3HT OTFTs. The higher mobility is explained primarily by the effectiveness of the fabrication process in keeping the interfacial layers …
Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires,
2022
University of Arkansas, Fayetteville
Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi
Graduate Theses and Dissertations
This work focuses on the investigation of gate-defined quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe2) as a means to unravel mesoscopic physical phenomena such as valley-contrasting physics in WSe2 flakes and its potential application as qubit, as well as realizing gate-controlled quantum dots based on elementaltellurium nanostructures which may unlock the topological nature of the host material carriers such as Weyl states in tellurium nanowires.The fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2 are reported. The gate electrodes in the device design are located above and below the WSe2 nanoflakes to accumulate …
Reliability Enhancing Control Algorithms For Two-Stage Grid-Tied Inverters,
2022
University of Arkansas, Fayetteville
Reliability Enhancing Control Algorithms For Two-Stage Grid-Tied Inverters, Yuheng Wu
Graduate Theses and Dissertations
In the photovoltaic (PV) generation system, two types of grid-tied inverter systems are usually deployed: the single-stage grid-tied inverter system and the two-stage grid-tied inverter system. In the single-stage grid-tied inverter system, the input of the inverter is directly connected to the PV arrays, while an additional dc-dc stage is inserted between the PV arrays and the dc-ac inverter in the two-stage design. The additional dc-dc stage could provide a stable dc-link voltage to the inverter, which also enables new design possibilities, including the multi-MPPT operation and solar-plus-storage application. Thus, the two-stage grid-tied inverter has been widely used in the …
Hybrid Multilevel Converters With Internal Cascaded/Paralleled Structures For Mv Electric Aircraft Applications,
2022
University of Arkansas, Fayetteville
Hybrid Multilevel Converters With Internal Cascaded/Paralleled Structures For Mv Electric Aircraft Applications, Fei Diao
Graduate Theses and Dissertations
Using on-board medium voltage (MV) dc distribution system has been a megatrend for next-generation electric aircraft systems due to its ability to enable a significant system mass reduction. In addition, it makes electric propulsion more feasible using MV power electronic converters. To develop high-performance high-density MV power converters, the emerging silicon carbide (SiC) devices are more attractive than their silicon (Si) counterparts, since the fast switch frequency brought by the SiC can effectively reduce the volume and weight of the filter components and thus increase the converter power density. From the converter topology perspective, with the MV dc distribution, the …
Synthesis And Characterization Of Vo2 Thin Films On Piezoelectric Substrates,
2022
Clemson University
Synthesis And Characterization Of Vo2 Thin Films On Piezoelectric Substrates, Samee Azad
All Theses
Polycrystalline VO2 thin films synthesized on two piezoelectric substrates (AT-cut quartz and GaN/AlGaN/GaN/Si) using low pressure direct oxidation technique have been characterized and compared to VO2 grown on traditional non-piezoelectric substrates sapphire and SiO2/Si. X-ray diffraction and atomic force microscopy characterization performed on the as grown films confirmed high quality of the VO2 films grown on both the piezoelectric and non-piezoelectric substrates. Changes in material properties associated with the semiconductor metal transition (SMT) of the VO2 films were investigated through resistivity and transmitted optical power changes measured across the SMT. It was observed that …
Raman Scattering Measurements And Analyses Of Gan Thin Films Grown On Zno Substrates By Metalorganic Chemical Vapor Deposition,
2022
Kennesaw State University
Raman Scattering Measurements And Analyses Of Gan Thin Films Grown On Zno Substrates By Metalorganic Chemical Vapor Deposition, Zane Mcdaniel, Zhe Chuan Feng, Kevin Stokes
Symposium of Student Scholars
Metalorganic chemical vapor deposition (MOCVD) is a popularly used method of growing thin films of GaN on ZnO (GZ) substrates, which pair well due to their structural and characteristic similarities. In this research, optical characterization of the surface quality of GZ sample films is measured by analyzing Raman scattering (RS) using a Renishaw inVia spectrometer fitted with a 532nm laser. Samples were grown in an improved double injection block rotating disc reactor. Multiple samples' spectra show broad peaks that correspond with the E2 (high) and A1 (LO) branches of GaN, and nicely fitted curves are observed for the characteristic E2 …
Redefining Research In Nanotechnology Simulations: A New Approach To Data Caching And Analysis,
2022
Purdue University
Redefining Research In Nanotechnology Simulations: A New Approach To Data Caching And Analysis, Darin Tsai, Alan Zhang, Aloysius Rebeiro
The Journal of Purdue Undergraduate Research
No abstract provided.
Design Of Arbitrary Planar Optical Devices With Full Phase Control Using Nanoimprinting Of Refractive Index,
2022
Clemson University
Design Of Arbitrary Planar Optical Devices With Full Phase Control Using Nanoimprinting Of Refractive Index, Matthew Panipinto
All Theses
Planar optical devices offer a lightweight solution to the constraints found in traditional optical devices. While subwavelength patterning of optics offers attractive performance and size, traditional fabrication methods demand a trade-off between resolution and throughput that presents a significant hurdle for the widespread use of subwavelength devices. Nanoimprinting of refractive index (NIRI) is a novel fabrication method pioneered in previous work that offers promise in mitigating the throughput issues that hamstring traditional fabrication methods. However, NIRI has not been shown to impart full $2\pi$ phase control in planar optical devices, nor has a method for fabricating arbitrary designs using the …
Design Of An Efficient Memristor-Based Dynamic Exclusive-Or Gate.,
2022
Electronics andCommunication Engineering BharatiVidyapeeth’sCollegeof Engineering NewDelhi,India
Design Of An Efficient Memristor-Based Dynamic Exclusive-Or Gate., Annu Chauhan, Dishika Chopra, Lirisha Tayal, Utsav Singal, Kirti Gupta, Monica Gupta
International Journal of Computer and Communication Technology
In this paper, an efficient memristor-based dynamic logic design for an Exclusive-OR gate is proposed. The proposed realization reduces the number of cascaded stages and component count thereby providing an overall performance improvement. The performance of the proposed design is compared with the most recent existing design through LTspice software simulations at 32 nm technology node in terms of total power consumption, average propagation delay, and number of components used in the implementation. The outcomes depict that the proposed design consumes 57 % reduced power and provides faster operation with 5.09 % improvement in propagation delay in comparison to its …
