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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Development Of Alternative Plasma Etching Techniques For The Selective Removal Of Tan With Respect To Sioch Dielectric Materials To Enable Future Back-End-Of-The-Line Scaling, Ivo Otto Iv
Electronic Theses & Dissertations (2024 - present)
Transistor scaling has continued according to Moore’s Law for over fifty years. As transistor size decreases, adequate power delivery is required to enable transistor scaling without performance loss. Power delivery is provided by a metal interconnect network with insulating dielectric that connects the transistor level to the power source, the signal speed within this metal line network limiting transistor level switching speeds. Reduction of signal delay has moved from primarily dimension-based improvement towards adoption of conductor and dielectric materials with lower resistivity and a reduced dielectric constant value, respectively: transitioning from Al/SiO2 to Cu/low-κ SiOCH. With this transition comes …
Characterization Of Highly Doped N-Type And P-Type Silicon Carbide Ohmic Contacts, Tanner Rice
Characterization Of Highly Doped N-Type And P-Type Silicon Carbide Ohmic Contacts, Tanner Rice
Graduate Theses and Dissertations
Silicon Carbide (SiC) is a rather new material that possesses unparalleled properties when compared to Silicon. Due to its larger band gap alongside other thermal properties, SiC can survive in hotter, more radiation intensive environments, whether that be within the crust of the earth or in the reaches of space. As a desirable semiconductor for these applications, CMOS is an especially important device due to its low power consumption. However, creating a good contact between the metal and semiconductor optimally requires two different metals for the n -type and the p-type semiconductor. This greatly increases the processing time, as separate …
Etching Process Development For Sic Cmos, Weston Reed Renfrow
Etching Process Development For Sic Cmos, Weston Reed Renfrow
Graduate Theses and Dissertations
Silicon Carbide (SiC) is an exciting material that is growing in popularity for having qualities that make it a helpful semiconductor in extreme environments where silicon devices fail. The development of a SiC CMOS is in its infancy. There are many improvements that need to be made to develop this technology further. Photolithography is the most significant bottleneck in the etching process; it was studied and improved upon. Etching SiC can be a challenge with its reinforced crystal structure. Chlorine-based inductively coupled plasma (ICP) etching of intrinsic SiC and doped SiC, SiO2, and Silicon has been studied. A baseline chlorine …
Subtractive Plasma-Assisted-Etch Process For Developing High Performance Nanocrystalline Zinc-Oxide Thin-Film-Transistors, Thomas M. Donigan
Subtractive Plasma-Assisted-Etch Process For Developing High Performance Nanocrystalline Zinc-Oxide Thin-Film-Transistors, Thomas M. Donigan
Theses and Dissertations
Thin-Film-Transistors (TFTs) employing undoped zinc-oxide (ZnO) thin-films are currently being investigated by the Air Force for microwave switching applications. Since the on-resistance (R(on)) of the device scales with channel length (LC), ZnO TFT optimization should be focused on reducing LC, therefore minimizing the associated insertion losses. In this research, deep sub-micron scaling of ZnO TFTs was undertaken using a subtractive reactive-ion-etch (RIE) process. Under optimum processing conditions, ZnO TFTs with LC as small as 155 nm were successfully demonstrated. The active ZnO channels of the TFTs were patterned by selective SF6-RIE of a tungsten ohmic film through electron-beam defined openings …
Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan
Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan
Student Publications & Research
Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate …
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
Faculty Publications
No abstract provided.
Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali
Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali
Electrical & Computer Engineering Faculty Publications
CuAlSe2 thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe2 films are obtained with some Cu2-δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe2 films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The …