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Electronic Devices and Semiconductor Manufacturing Commons™

Open Access. Powered by Scholars. Published by Universities.®

2000

Articles 1 - 6 of 6

Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Effect Of Gate Leakage Current On Noise Properties Of Algan/Gan Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang Dec 2000

Effect Of Gate Leakage Current On Noise Properties Of Algan/Gan Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang

Faculty Publications

The effect of the gate leakage current fluctuations on noiseproperties of AlGaN/GaN heterostructurefield effect transistors(HFETs) has been studied in conventional HFET structures and in AlGaN/GaN metal-oxide-semiconductorheterostructurefield effect transistors (MOS-HFETs). The comparison of the noiseproperties of conventional AlGaN/GaN HFETs and AlGaN/GaN MOS-HFETs fabricated on the same wafer, allowed us to estimate the contribution of the gate currentnoise to the HFET’s output noise. The effect of the gate current fluctuations on output noiseproperties of HFETs depends on the level of noise in the AlGaN/GaN HFETs. For the transistors with a relatively high magnitude of the Hooge parameter α∼10−3, even a …

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Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur Aug 2000

Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur

Faculty Publications

We report on AlGaN/GaN metal–oxide–semiconductor heterostructurefield-effect transistors (MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO2/AlGaNheterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 …

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Theory Of Sic Schottky Barrier Conduction And Model Analysis For Diode Breakdown With And Without Screw Dislocations, Lifeng Zheng Apr 2000

Theory Of Sic Schottky Barrier Conduction And Model Analysis For Diode Breakdown With And Without Screw Dislocations, Lifeng Zheng

Electrical & Computer Engineering Theses & Dissertations

Silicon Carbide is a very promising candidate for applications in high-power, high-temperature, and high-radiation conditions under which conventional semiconductors cannot perform adequately. However, the SiC processing technology has not yet reached maturity. There is also limited knowledge of its physical and chemical characteristics, and its device behavior is not well understood. The aim of this thesis is to analyze two specific problems in the SiC area. The first issue involves the large discrepancy between experimental I - V characteristics of SiC Schottky diodes and their theoretical values. The observed data, especially at low voltages, is found to be orders of …

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Investigation Of Ge2Te2Sb5 Chalcogenide Thin Film For Use As An Analog Memory, Travis F. Blake Mar 2000

Investigation Of Ge2Te2Sb5 Chalcogenide Thin Film For Use As An Analog Memory, Travis F. Blake

Theses and Dissertations

This work investigates the feasibility of using Ge2Te2Sb5 chalcogenide films for analog memory. Thick film chalcogenide memory devices provided by Ovonyx, Inc. are characterized to determine how well the devices meet the repeatability, stability and predictability criteria needed to accurately store analog data values. Chalcogenide memory devices take advantage of the phase-shifting nature of chalcogenide materials to store the analog data as a resistance level. An automated test system was developed to characterize the material and the prototype devices with the goal to determine the 1) non-destructive readability of the device at different resistance values; …

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High Frequency Characteristic Studies Of The N-Channel Enhancement Mode Power Mosfet Device, Rosli Sahrani Jan 2000

High Frequency Characteristic Studies Of The N-Channel Enhancement Mode Power Mosfet Device, Rosli Sahrani

Student Works (2000-2009)

The n-channel enhancement mode power MOSFET device which is known to have the highest switching speed among the controllable switches group is the device studied in this research work. This commercially packaged device manufactured. by Harris Semiconductor has a combination ofMOSFET and JFET structures superimposed. It has a p-type MOS gate and a reversed biased field induced pin junction laterally at the surface and a vertical JFET structure. A Keithley 590 C-V Analyz.er was used to characterize this device. High frequency (1MHz) capacitance-voltage (C-V) and conductance-voltage (G-V) characteristic were measw-ed across the gate-source, gate-drain and source-drain tenninals of the device. …

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New Buffer Layers, Large Band Gap Ternary Compounds: Cualte², K. Benchouk, E. Benseddik, C. O. El Moctar, J. C. Bernède, S. Marsillac, J. Pouzet, A Khellil Jan 2000

New Buffer Layers, Large Band Gap Ternary Compounds: Cualte², K. Benchouk, E. Benseddik, C. O. El Moctar, J. C. Bernède, S. Marsillac, J. Pouzet, A Khellil

Electrical & Computer Engineering Faculty Publications

After deposition, by evaporation under vacuum, of Al/Cu/Te, multilayer structures, annealing at 673 K or more for half an hour, under argon flow, allows CuAlTe2 films crystallized in the chalcopyrite structure to be obtained. The optical and electrical properties are interpreted by introducing the influence of impurity foreign phases present in the films. The optical properties are sensitive to the small Al2O3 domains randomly distributed into the CuAlTe2 polycrystalline matrix. The optical band gap is slightly increased (2.35 eV) by the presence of alumina. The conductivity measurements show that a short circuit effect can be induced by a binary Cu2-xTe …

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