Electronic Devices and Semiconductor Manufacturing Commons^™

Rapid-Prototyping Nanofabrication: Lcd-Based Projection Lithography And Physical Vapor Deposition, Sabeel Saleem Mohammmed

University Honors Theses

The semiconductor industry's continued growth, driven in large part by demand for artificial intelligence hardware, has highlighted the need for greater workforce development in regions adjacent to major fabrication centers like Oregon's Silicon Forest. This capstone project lays the groundwork for a small scale and student led semiconductor fabrication lab at Portland State University by demonstrating two of the core steps in chip manufacturing: photolithography and thin film deposition. Rather than relying on conventional fixed reticles, this work explores a unique, low cost approach to patterning that uses an ultraviolet-compatible liquid crystal display (LCD) as a programmable reticle, allowing arbitrary …

Designing Enhanced Nonlinearity In Plasmonic Devices With Epsilon-Near-Zero Films, Kevin Tran Le

Electrical Engineering and Computer Science (MS) Theses

The growing demand for energy-efficient optical information processing motivates compact nonlinear photonic devices that can operate at low power. Silicon photonics is a mature platform for linear optical functions, but nonlinear operation remains challenging because of its weak Kerr response, two-photon absorption at telecommunication wavelengths, and limited compatibility with deeply subwavelength plasmonic confinement. This thesis computationally investigates epsilon-near-zero thin films integrated into plasmonic waveguide architectures as a route toward stronger light–matter interaction in compact nonlinear devices.

Two waveguide geometries are examined: a hybrid metal-insulator-metal plasmonic slab waveguide incorporating an ultrathin indium tin oxide epsilon-near-zero layer (5–50 nm), and a dielectric-loaded …

The Design And Analysis Of Robust Mems Devices For Extreme Space Environments, Joshua Taggart

Honors Undergraduate Theses

The purpose of this study is to analyze aluminum nitride (AlN) micro-electromechanical systems (MEMS) resonators designed for extreme-environment applications. The devices of study are Lamb wave, piezoelectric resonators designed and fabricated using conventional semiconductor manufacturing processes and operating around various frequencies in the megahertz range. The purpose of this study is to advance understanding of MEMS devices in extreme-temperature and radiated environments for outer-space applications.

Devices were tested under vacuum at temperatures ranging from room temperature (~21°C) to 800°C. Under these conditions, the device was measured both as a resonator and in an oscillator circuit. Results show that the resonant …

Development Of Alternative Plasma Etching Techniques For The Selective Removal Of Tan With Respect To Sioch Dielectric Materials To Enable Future Back-End-Of-The-Line Scaling, Ivo Otto Iv

Electronic Theses & Dissertations (2024 - present)

Transistor scaling has continued according to Moore’s Law for over fifty years. As transistor size decreases, adequate power delivery is required to enable transistor scaling without performance loss. Power delivery is provided by a metal interconnect network with insulating dielectric that connects the transistor level to the power source, the signal speed within this metal line network limiting transistor level switching speeds. Reduction of signal delay has moved from primarily dimension-based improvement towards adoption of conductor and dielectric materials with lower resistivity and a reduced dielectric constant value, respectively: transitioning from Al/SiO₂ to Cu/low-κ SiOCH. With this transition comes …

Nanomagnet Based Reservoir Computing And Quantum Control, Fahim F. Chowdhury

Theses and Dissertations

Conventional CMOS scaling has driven remarkable advances in computing but faces increasing physical and energy constraints, motivating alternative computing paradigms that integrate memory and computation while improving energy efficiency. Nanoscale magnetic systems offer a promising platform for such approaches because their intrinsic nonlinear dynamics and localized magnetic fields can support both classical and quantum information processing. This thesis investigates nanomagnetic systems for physical reservoir computing and, with primary emphasis, for localized quantum control of spin qubits.

The first part explores dipole-coupled nanomagnet arrays as physical reservoirs. Micromagnetic simulations demonstrate nonlinear dynamical behavior with high short-term memory and parity-check capacity, enabling …

Next-Generation Computing Hardware: Advancements In Tantalum Oxide Reram For Ai And Neuromorphic Applications, Rajas Ravindra Mathkari

Electronic Theses & Dissertations (2024 - present)

The rapid development of artificial intelligence, machine learning, and data-intensive computing has exposed the fundamental limitations of conventional von Neumann architectures, in which energy and time are continuously lost transferring data between physically separate memory and processing units. In contrast, the human brain performs complex computations directly at the point of memory storage through billions of parallel synaptic connections, a paradigm known as in-memory computing. Realizing this in hardware requires memory devices that are fast, energy-efficient, non-volatile, and capable of storing multiple resistance levels in an analog manner. Resistive Random Access Memory (ReRAM) based on tantalum oxide (TaOx) is one …

Test Data: Raised Or Recessed? Finding The Optimal Gate Architecture For Improving The Static Performance Of Graphene Transistors, Ivan Puchades, Tzu-Jung Huang, Andrew Spencer, Luke Ingraham, Anibal Pacheco

Data

As silicon CMOS technology approaches its scaling limits, graphene offers a compelling alternative as the active material channel in transistors due to its high carrier mobility and atomically thin profile, which provide strong electrostatic control and promise high-performance analog applications. However, roadblocks such as device-to-device variation, high contact resistance, poor dielectric interfaces, and non-uniform graphene quality have limited the adoption of graphene field effect transistors (GFETs). Hence, further investigations are required for mitigating these issues at a material, e.g., by improving graphene transfer, and device level, e.g., by finding an appropriate gate architecture. In this work, we directly compare two …

Self-Poled P(Vdf-Trfe) Based Composites For Energy Harvesting And Wearable Sensor Applications, Lavanya Muthusamy

All Dissertations

The growing demand for flexible, low-power, and self-powered wearable electronic systems has accelerated research interest in polymer-based sensors and energy harvesting technologies. Among piezoelectric polymer materials, Poly(vinylidene fluoride-trifluoro ethylene) [P(VDF-TrFE)], over the years, has garnered significant attention due to its unique piezoelectric properties, high dielectric constant, mechanical flexibility, thermal stability, chemical resistance, biocompatibility and compatibility with scalable fabrication processes. Despite its advantages, conventional P(VDF-TrFE)-based devices often require external poling and face limitations in integration with low-cost, flexible substrates. To overcome these limitations, this research study explores the nanofiller approach, along with facile fabrication processes, and structural design strategies aimed at …

Colloidal Quantum Dots: A Path Toward Making Mid-Wave Infrared Sensing A Ubiquitous Technology, Mohammad Mostafa Al Mahfuz

Dissertations

Reducing the size, weight, power consumption, and cost (SWaP-C) of infrared detectors could make infrared sensing more widely accessible. In the critical mid-wavelength infrared (MWIR) spectral range of 3-5 gm, commercially available detectors are limited by the high costs associated with epitaxial growth and hybridization, as well as the need for cryogenic cooling. These factors restrict their use to defense and space applications.

Colloidal quantum dots present a promising material for overcoming these challenges, with wafer-scale monolithic integration and Auger suppression being the key material capabilities to minimize the sensor's SWaP-C. Infrared sensors based on colloidal quantum dots have been …

Functional Devices Based On Freestanding 2d Materials, Shijue Xu

McKelvey School of Engineering Graduate Student Theses & Dissertations

Two-dimensional (2D) materials have attracted extensive attention in the field of nanoelectronics due to their atomic-scale thickness, high surface-to-volume ratio, tunable electronic properties, and compatibility with low-temperature processing. These characteristics make them highly suitable for the construction of emerging device architectures, particularly in both ionic and electronic devices.

In this work, we investigate the application of 2D materials in two distinct classes of devices: ionically-driven memristors and electronically-dominated metal–semiconductor contacts. For the memristor study, we fabricate heterostructure-based resistive switching devices using h-BN and WSe₂ as active layers. These 2D material-based memristors exhibit stable power consumption loops and high linearity …

Defect Characterization Of Sic Schottky Barrier Diode Using Deep Level Transient Spectroscopy, Zachary I. Mccoy

Electrical Engineering and Computer Science Undergraduate Honors Theses

The aim of this project is to use deep level transient spectroscopy (DLTS) to energetically evaluate defects by using the carrier concentration dependence on temperature and where these carriers may experience deviation from standard predictions. These defects become apparent through multiple C-V measurements that are swept through a temperature range. By analyzing trends with respect to temperature, the defects can be energetically “located,” and thus identified. This identification can help streamline semiconductor material manufacturing/growth because DLTS identifies potential defect causes by providing data to characterize semiconductor mid-band defects. DLTS can assess nearly all parameters associated with traps/defects including density, thermal …

Spin Coater Design With Pid Algorithm Using Polynomial Regression Approach And Bias Tuning For Tio2 Deposition Process, Geo Surya Andika, Nofrijon Sofyan, Donanta Dhaneswara, Akhmad Herman Yuwono

Journal of Materials Exploration and Findings

The thin-film deposition technique using spin coating offers a cost-effective alternative to Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD). The spin-coating process requires precise control of the motor drive system to ensure that the rotational speed, measured in rotations per minute (RPM), aligns with the set point and remains stable. This study presents the design and development of a spin coater prototype to achieve uniform thin-film deposition. The control method employed utilizes a Proportional-Integral-Derivative (PID) algorithm, incorporating a polynomial approach with bias tuning. The PID control was chosen to achieve stable operation in a non-linear system. The performance …

Surface Morphology And Moisture Adsorption/Desorption Characteristics Of Hybrid-Dielectric Moisture Sensors, Ronak Ali

Theses and Dissertations--Electrical and Computer Engineering

Relative humidity sensors are used for high-humidity measurement. Moisture sensors, or dew point sensors are used for low-humidity measurement (< 1 ppm_v). The dissertation contains two parts of studies. In the first part, the effect of surface morphology on the response speed of moisture sensors is studied. Moisture sensors using α-Al₂O₃ films as porous dielectric materials deposited by anodic spark deposition are studied. In this part of the study, a variety of small pores have been studied to investigate the response speed of moisture sensors. Three different surface morphologies have been studied using scanning electron microscopy. One …

The Impact Of Chromium Ion Implantation On Ald Lead Chalcogenide Thin Films, Haifeng Cong, Charlotte Poterie, Jean Francois Barbot, Helmut Baumgart

Electrical & Computer Engineering Faculty Publications

Inherently the synthesis of semiconducting materials by Atomic Layer Deposition ALD produces only intrinsic undoped films which require the introduction of small amounts of impurities for doping to change them into extrinsic semiconductors. Apart from various in-situ diffusion doping techniques like delta doping during the ALD process, post deposition doping by ion implantation affords the best control of dose and doping profile. The present study investigates the impact of 180 keV Cr⁺ ion implantation on the properties of semiconducting ALD lead chalcogenide thin films to improve their thermoelectric figure of merit. The implantation was accomplished with 180 keV Chromium …

Epitaxial Quantum Dot Scintillators With Monolithic Photodetector Integration: Physics, Fabrication And Characterization Of Materials And Devices, Allan Oreave Minns

Electronic Theses & Dissertations (2024 - present)

This dissertation discloses the physics, fabrication, and characterization of high-performance scintillator detectors based on epitaxial InAs quantum dots (QDs) in GaAs. The detector crystals grown include monolithically integrated In_0.35GaAs photodetectors with Al_0.92-0.6In_0.03-0.35Ga_0.05As metamorphic buffer layers (MBL). A device fabrication process was developed for the lithographic patterning, chemical etching, contact metallization and readout integration of materials grown by means of molecular beam epitaxy (MBE) on 3-inch GaAs (001) wafers. Low capacitance integration with readout electronics was achieved through wire bonds to custom printed circuit boards (PCBs) with commercial components.

The relationship between device …

Ge/Sige Quantum Wells: Material For The Post-Moore Era, Troy Alexander Hutchins-Delgado

Optical Science and Engineering ETDs

This dissertation demonstrates high-quality germanium quantum wells on a 200 mm silicon wafer platform, enabling novel device possibilities. Partnering with a commercial silicon-germanium epitaxy supplier, we obtained shallow, undoped germanium quantum wells with high-crystalline quality, confirmed through x-ray diffraction, secondary ion mass spectroscopy, high-resolution scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. Hall bar devices fabricated on single quantum wells revealed that surface preparation can tune transport properties while maintaining peak mobilities around 10⁵ cm²V⁻¹s⁻¹. Manganese-germanide spintronic contacts were integrated via solid-state reaction, with contact quality assessed through Schottky diodes, transfer length …

Degradation Study Of Single Crystal Barium Titanate Capacitors Under Harsh Environment, Menglin Wang

Electrical Engineering Theses and Dissertations

Capacitors are critical for voltage source converter functionality. DC-link capacitors are known to have reliability issues. Resistance degradation at high temperatures is one of the primary failure modes in capacitors. The overall goal of this program is to improve the understanding of high voltage breakdown and resistance degradation in high dielectric constant inorganic ceramic capacitors, using single crystal BaTiO₃ as a model system to understand the impact and control of oxygen vacancy migration to maximize the long-term reliability of high voltage inorganic multi-layer ceramic capacitors, which allows higher frequency operation, reducing the size and cost of passive components in …

Development And Processing Of Shape Memory Polymer Composites (Smpcs) For Application In Structural Robotics And Robotic Sensors., Kavish Sudan

Electronic Theses and Dissertations

Shape Memory Polymers (SMPs) have attracted significant attention since their introduction in the 1980s due to their remarkable ability to regain their original shape from a temporarily deformed state when exposed to an external stimulus, typically heat. This shape memory effect, driven by thermal transitions such as the glass transition temperature (T_g) or melting temperature (T_m), has made SMPs highly attractive for applications in soft robotics, aerospace, and biomedical devices. However, SMPs face challenges such as limited mechanical strength, thermal stability, and electrical conductivity, which hinder their broader adoption in advanced applications. To address these challenges, …

Fabrication And Characterization Of A Monolithic Photonic Integrated Circuit With High-Aspect Ratio Photonic Device Structures, Sami A. Nazib

Optical Science and Engineering ETDs

The focus of this work was to create a process to fabricate an InP-based Photonic Integrated Circuit (PIC). The design of the PIC required the photonic components of this device to be created by deep etching of an epitaxially-grown multilayer structure. Therefore, a novel dry etching process was developed to produce very high aspect- ratio (HAR) features. This process not only involved the development of dry etch chemistry but also the engineering of a metal mask structure. The next step of the challenge was to use a polymer-based material that would have two functions: cladding for the etched photonic components …

Influence Of Al2o3 Passivation Layer Thickness On The Thermal Stability And Quality Of Mocvd-Grown Gan On Si, S M Atiqur Rahman, Manika Tun Nafisa, Zhe Chuan Feng, Benjamin Klein, Ian T. Ferguson

Symposium of Student Scholars

This research delves into the significant impact of varying thicknesses of the Al₂O₃ passivation layer on the thermal stability and crystalline quality of GaN on Si structures, an essential aspect for the next generation of high-temperature electronic and optoelectronic devices. By adopting metal-organic chemical vapor deposition (MOCVD) for the growth process, we analyzed structures with different Al₂O₃ passivation layer thicknesses: none, 2 nm, 10 nm, and 20 nm, each built upon the GaN layer. Through Raman spectroscopy, we meticulously assessed the changes in the E₂ (High) phonon mode's peak position and full width …

Engineering Composite Gridlines For Improved Solar Module Reliability, Andre Chavez

Electrical and Computer Engineering ETDs

Renewable energy sources, such as solar power, are rapidly expanding worldwide to meet increased energy demands. However, these sources are exposed to challenging environmental stressors, such as extreme wind, heavy snow loads, and hailstorms that can cause irreversible damage to the crystalline semiconductor solar cells. Today, single crystalline silicon solar cells dominate the market, and our work is focused on improving their reliability against environmental stressors. One of the main degradation mechanisms caused by environmental stressors is cell cracks. These microcracks can go virtually undetected and lead to reduced power output from solar modules over time. To solve this engineering …

Effect Of Fabrication Parameters On The Ferroelectricity Of Hafnium Zirconium Oxide Films: A Statistical Study, Guillermo A. Salcedo, Ahmad E. Islam, Elizabeth Reichley, Michael Dietz, Christine M. Schubert Kabban, Kevin D. Leedy, Tyson C. Back, Weison Wang, Andrew Green, Timothy S. Wolfe, James M. Sattler

Faculty Publications

Ferroelectricity in hafnium zirconium oxide (Hf_1−xZr_xO₂) and the factors that impact it have been a popular research topic since its discovery in 2011. Although the general trends are known, the interactions between fabrication parameters and their effect on the ferroelectricity of Hf_1−xZr_xO₂ require further investigation. In this paper, we present a statistical study and a model that relates Zr concentration (x), film thickness (t_f), and annealing temperature (T_a) with the remanent polarization (P_r) in tungsten (W)-capped Hf_1−xZr_xO₂. …

Enhancing Electromigration Reliability In Solder Interconnects Through Microstructure Control And Thermomechanical Failure Mechanisms In Thin Metal Lines Under Surge Current Conditions, Hariram Mohanram

Material Science and Engineering Dissertations - Archive

The relentless miniaturization of semiconductor devices has intensified reliability challenges in electronic packaging, particularly for solder interconnects and thin metal lines. This dissertation investigates two critical failure mechanisms—electromigration (EM) and thermomechanical fatigue (TMF)—and explores strategies to mitigate these effects. Electromigration, driven by high-density current-induced atomic migration, significantly impacts solder interconnects. This study examines the role of Under-Bump Metallization (UBM) and solder microstructure in improving EM reliability. Findings reveal that thicker UBMs delay void nucleation and enhance EM resistance, while the absence of UBM leads to failure through vertical void propagation. Additionally, grain orientation, particularly the c-axis alignment in Sn grains, …

Nano-Patterned Si Structures For Optical Filters And Electro-Mechanical Relays: Fabrication, Characterization, Prospects, And Limitations, Md Ataul Mamun

Theses and Dissertations

Nanofabrication technology, especially nanopatterning, is a rapidly advancing field that has already resulted in creating novel devices and holds promise for producing even more with unmatched performance. These techniques also allow us to gain insight into physical phenomena at the micro- and nanoscale. The ultimate performance of nanofabricated devices and their compatibility with existing Si-based CMOS technology hinge upon the careful selection of materials and precise design, coordinated with meticulous pattern transfer. In this work, we applied nanopatterning techniques on silicon to create optical filters for the shortwave infrared (SWIR) region and nanoelectromechanical system (NEMS) relay-based logic gates. Additionally, these …

Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov

Theses and Dissertations

This study explores the potential of beryllium (Be) as an alternative dopant to magnesium (Mg) for achieving higher hole concentrations in gallium nitride (GaN). Despite Mg prominence as an acceptor in optoelectronic and high-power devices, its deep acceptor level at 0.22 eV above the valence band limits its effectiveness. By examining Be, this research aims to pave the way to overcoming these limitations and extend the findings to aluminum nitride and aluminum gallium nitride (AlGaN) alloy. Key contributions of this work include. i)Identification of three Be-related luminescence bands in GaN through photoluminescence spectroscopy, improving the understanding needed for further material …

Effect Of Annealing On Photoluminescence From Defects In Gan, Oleksandr Andrieiev

Theses and Dissertations

Annealing is a critical process in modern GaN technology, essential for achieving p-type conductivity by activating the Mg_Ga acceptor, as first demonstrated by Shuji Nakamura in the early 1990s. Despite the omnipresence of hydrogen as an impurity in GaN crystals, the precise mechanisms governing hydrogen diffusion and acceptor passivation remain only partially understood. The presented research investigates the effects of annealing-induced activation and hydrogen passivation on C and Be acceptors in GaN grown by MOCVD, HVPE, and MBE methods. We explored these effects by using several annealing techniques, gas compositions, and thermal regimes. A transient behavior between the C …

Natural Convection Heat Transfer Characteristics Of Sierpinski Carpet Fractal Fins In Horizontal And Vertical Orientations, Ayomide Ayoola

College of Graduate Studies: Theses & Dissertations

This study investigates the thermal performance of fins with perforations inspired by the Sierpinski carpet fractal pattern under natural convection conditions in both vertical and horizontal orientations. The objective is to analyze the effects of fractal iteration levels on three primary performance metrics: efficiency, effectiveness, and effectiveness per unit mass. Experimental evaluations were conducted for fractal fins from iterations 0 through 4, utilizing aluminum material, with each fin heated to controlled conditions. The results reveal that efficiency generally decreases with higher fractal iterations, reflecting increased thermal resistance associated with greater porosity and complex geometry. However, effectiveness per unit mass improves …

Design, Fabrication And Characterization Of Zero Power Sensor/Harvester For Smart Grid Applications, Zeynel Guler

Mechanical Engineering ETDs

This study presents a flexible sensor/harvester device to be used in both electromagnetic sensing and energy harvesting applications for smart grids. When a current passes through a wire, the sensor detects the magnetic field created by that current. The sensor magnet interacts with the wire magnetic field resulting in a transfer of energy through the piezoelectric cantilever. Piezoelectric, conductive, magnetic, and magnetostrictive composite thin films were prepared to fabricate this device.

Initially, the magnet of the cantilever was optimized considering its shape, thickness, length, taper angle etc. via both simulations and experiments. Peak to peak voltage versus cantilever position graph …

Carrier Dynamics In Green Iii-Nitride Leds Using Small-Signal Electroluminescence, Xuefeng Li

Optical Science and Engineering ETDs

Solid-state lighting has achieved significant success over the past two decades, but the low quantum efficiency of green LEDs (i.e., the “green gap”) remains a barrier to full red-green-blue (RGB) displays in numerous applications. Combating efficiency reduction in longer-wavelength LEDs requires understanding the relative roles of intrinsic effects (e.g., wave-function overlap, carrier-current density relationship, phase-space filling (PSF)) vs. extrinsic effects (e.g., material degradation due to increased defect density, compositional inhomogeneities, etc.). A systematic study of the carrier dynamics in InGaN/GaN LEDs is very important for understanding the origin of the green gap and for providing solutions to improve the efficiency …

Impact Of Silicon Ion Irradiation On Aluminum Nitride-Transduced Microelectromechanical Resonators, David D. Lynes, Joshua Young, Eric Lang, Hengky Chandrahalim

Faculty Publications

Microelectromechanical systems (MEMS) resonators use is widespread, from electronic filters and oscillators to physical sensors such as accelerometers and gyroscopes. These devices' ubiquity, small size, and low power consumption make them ideal for use in systems such as CubeSats, micro aerial vehicles, autonomous underwater vehicles, and micro-robots operating in radiation environments. Radiation's interaction with materials manifests as atomic displacement and ionization, resulting in mechanical and electronic property changes, photocurrents, and charge buildup. This study examines silicon (Si) ion irradiation's interaction with piezoelectrically transduced MEMS resonators. Furthermore, the effect of adding a dielectric silicon oxide (SiO₂) thin film is …