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Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Discipline
- Keyword
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- Amorphous Silicon Solar Cell (1)
- Baseline randomness (1)
- Coils Ceramics Gas discharges Dielectric barrier discharge Dielectrics (1)
- DCF (1)
- Dispersion diagram (1)
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- Energy Scavenging (1)
- Flow control Plasma flows Carbon Plasma materials processing Process monitoring and control (1)
- Full-vector eigenvalue equations and analyzed (1)
- Inhibited coupling mechanisms. (1)
- Modeling (1)
- Patch antenna. (1)
- Skewness (1)
- Systematic loss (1)
- Theory of anti-resonant (1)
- Ultra-wideband (1)
- Vivaldi (1)
- Wireless LAN; p-i-n diodes; microstrip antennas; antenna radiation patterns; pattern reconfigurable antenna; distributed network; single-pole double-throw PIN diode circuit; WLAN application; back-to-back microstrip patch antenna; radiation pattern; FR-4 substrate; spatial diversity; switchable pattern; ground plane; patch element (1)
- Yield curve (1)
Articles 1 - 7 of 7
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Anti-Resonance, Inhibited Coupling And Mode Transitionin Depressed Core Fibers, Xiaokang Lian, Gerald Farrell, Qiang Wu, Wei Han, Changyu Shen, Youqiao Ma, Yuliya Semenova
Anti-Resonance, Inhibited Coupling And Mode Transitionin Depressed Core Fibers, Xiaokang Lian, Gerald Farrell, Qiang Wu, Wei Han, Changyu Shen, Youqiao Ma, Yuliya Semenova
Articles
The depressed core fiber (DCF), consisting of a low-index solid core, a high-index cladding and air surrounding, is in effect a bridge between the conventional step-index fiber and the tube-type hollow-core fiber from the point of view of the index profile. In this paper the dispersion diagram of a DCF is obtained by solving the full-vector eigenvalue equations and analyzed using the theory of anti-resonant and the inhibited coupling mechanisms. While light propagation in tube-type hollow-core fibers is commonly described by the symmetric planar waveguide model, here we propose an asymmetric planar waveguide for the DCFs in an anti-resonant reflecting …
Pattern Reconfigurable Back-To-Back Microstrip Patch Antenna, Kansheng Yang, Xiulong Bao, Patrick Mcevoy, Max Ammann
Pattern Reconfigurable Back-To-Back Microstrip Patch Antenna, Kansheng Yang, Xiulong Bao, Patrick Mcevoy, Max Ammann
Articles
A back-to- back microstrip patch antenna with a switchable pattern is proposed for WLAN applications. The patch elements, printed on FR-4 substrates with a common ground plane, are switched with a single-pole double-throw PIN diode circuit. Switching the feed selects either of two identical radiation patterns in the opposing hemispheres for spatial diversity that would benefit a distributed network.
Amorphous Silicon Solar Vivaldi Antenna, Oisin O'Conchubhair, Kansheng Yang, Patrick Mcevoy, Max Ammann
Amorphous Silicon Solar Vivaldi Antenna, Oisin O'Conchubhair, Kansheng Yang, Patrick Mcevoy, Max Ammann
Articles
An ultra-wideband solar Vivaldi antenna is proposed. Cut from amorphous silicon cells, it maintains a peak power at 4.25 V which overcomes a need for lossy power management components. The wireless communications device can yield solar energy or function as a rectenna for dual-source energy harvesting. The solar Vivaldi performs with 0.5 - 2.8 dBi gain from 0.95 - 2.45 GHz and in rectenna mode, it covers three bands for wireless energy scavenging.
Omnidirectional Circularly Polarised Microstrip Patch Antenna, Max Ammann, Adam Narbudowicz, Xiulong Bao
Omnidirectional Circularly Polarised Microstrip Patch Antenna, Max Ammann, Adam Narbudowicz, Xiulong Bao
Articles
An omnidirectional circularly-polarised patch antenna is proposed. The antenna radiates right-handed circular-polarisation with an average axial ratio of 2.3 dB over a full 360° . A shallow diagonal CPW inset-feed was used to achieve good matching to the back-to-back coupled patches, providing a measured S11 < -15 dB at the centre frequency. The measured cross-polar performance is better than 13 dB and the realised gain variation is ~3 dB in the plane normal to the substrate.
Modeling The Random Component Of Manufacturing Yield Of Integrated Circuits., David L. Farnsworth, Michael E. Long
Modeling The Random Component Of Manufacturing Yield Of Integrated Circuits., David L. Farnsworth, Michael E. Long
Articles
A model is created for the number of integrated circuits that are good from each wafer on which they are fabricated. The goal is to separate the random or common cause loss from the systematic or special loss. The random loss from this type of process is modeled so that false alarms indicating systematic loss are less likely to occur and so that the structure of the systematic loss can be determined.
Hand-Held Flyback Driven Coaxial Dielectric Barrier Discharge: Development And Characterization, Victor J. Law, Vladimir Milosavljevic, Neil O’Connor, James F. Lalor, Steven Daniels
Hand-Held Flyback Driven Coaxial Dielectric Barrier Discharge: Development And Characterization, Victor J. Law, Vladimir Milosavljevic, Neil O’Connor, James F. Lalor, Steven Daniels
Articles
The development of a handheld single and triple chamber atmospheric pressure coaxial dielectric barrier discharge driven by Flyback circuitry for helium and argon discharges is described. The Flyback uses external metal-oxide-semiconductor field-effect transistor power switching technology and the transformer operates in the continuous current mode to convert a continuous dc power of 10–33 W to generate a 1.2–1.6 kV 3.5 μs pulse. An argon discharge breakdown voltage of ∼768 V is measured. With a 50 kHz, pulse repetition rate and an argon flow rate of 0.5–10 argon slm (slm denotes standard liters per minute), the electrical power density deposited in …
Real-Time Plasma Controlled Chemistry In A Two-Frequency, Confined Plasma Etcher, Vladimir Milosavljevic, Albert R. Ellingboe, Cezar Gaman, John V. Ringwood
Real-Time Plasma Controlled Chemistry In A Two-Frequency, Confined Plasma Etcher, Vladimir Milosavljevic, Albert R. Ellingboe, Cezar Gaman, John V. Ringwood
Articles
The physics issues of developing model-based control of plasma etching are presented. A novel methodology for incorporating real-time model-based control of plasma processing systems is developed. The methodology is developed for control of two dependent variables (ion flux and chemical densities) by two independent controls (27 MHz power and O2flow). A phenomenological physics model of the nonlinear coupling between the independent controls and the dependent variables of the plasma is presented. By using a design of experiment, the functional dependencies of the response surface are determined. In conjunction with the physical model, the dependencies are used to deconvolve the sensor …