Electronic Devices and Semiconductor Manufacturing Commons^™

A Stochastic Model For Crystal-Amorphous Transition In Low Temperature Molecular Beam Epitaxial Si(111), R. Venkatasubramanian, Suresh Gorantla, S. Muthuvenkatraman, Donald L. Dorsey

Electrical & Computer Engineering Faculty Research

Molecular beam epitaxial Si (111) grown below a certain temperature result in amorphous structure due to the limited surface mobility of atoms in finding correct epitaxial sites. In spite of many experimental and theoretical studies, the mechanism of crystal‐amorphous transition and its dynamics related to the growth conditions are not well understood. In this article, we present a theoretical model based on the formation of stacking fault like defects as a precursor to the amorphous transition of the layer. The model is simulated based on a stochastic model approach and the results are compared to that of experiments for temperatures …

Analysis And Optimization Of A Banyan Based Atm Switch By Simulations, Syed Sohel Hussain

Dissertations and Theses

Asynchronous Transfer Mode (ATM) is proposed technology to create a broadband (high speed) packet switching network capable of transporting wide variety of services including voice, video and data in an integrated manner. The main concern in designing the switching fabrics used in this technology are speed, throughput, delay and variance of delay. We analyze the performance by simulations of ATM switch based on Banyan network in the uniform traffic condition.

We compare the analytical results obtained from three-state model Yan and Jenq to the simulation results. Based on observation of simulation results, we propose non-blocking first stage (NBFS) to increase …

Nlo Waveguide "And" Switch And Method Therefor, John J. Kester, Iyad A. Dajani, Peter M. Ranon, Thomas G. Alley

AFIT Patents

Method and apparatus are provided for NLO switching by first providing a phase-matched SHG grating which outputs a reinforced SHG beam only when two input beams of frequency (ω) are present in two modes of such wg. The so encoded NLO switch is operated by directing at least two input pulsed laser beams of frequency (ω) into the two modes of the wg to generate a reinforced pulsed output SHG beam and output same from the wg in an NLO switching process. The two input beams desirably have a separate pulse train and the spatial and temporal overlap of the …

Two-Dimensional Drift-Diffusion Simulations Of Silicon Avalanche Shaper (Sas) Devices For High Power Applications, Hamid Jalali

Electrical & Computer Engineering Theses & Dissertations

Silicon Avalanche Shaper devices have been projected as being important components of an inexpensive, semiconductor-based technology for high power switching applications. The primary advantage of this technology is that it is based on Silicon material which is easy to fabricate and has a well established processing technology. Unlike other high power technologies, the SAS devices do not rely on external optical triggering which eliminates the need for lasers and related optical circuitry.

The SAS based high power switching technology has been pioneered and tested by a Russian group. Though preliminary results have been very encouraging, the device reliability and its …

Electron Beam Emission From A Ferroelectric Cathode, Crystal Briana Garland

Electrical & Computer Engineering Theses & Dissertations

The electron beam emission from a LTZ-2 (lead titanate-zirconate) ferroelectric cathode was characterized. The purpose was to determine the operation range for this type of electron emitter. The experimental apparatus consisted of a high voltage driving circuit with a charging voltage up to 30kV. A solid-state SCR switch is used to generate the high voltage pulse which induces a polarization change. Current densities on the order of 80A/cm² 30kV were achieved. The electron beam profile is Guassian. At long anode-cathode distances the measured current densities were found to be above Child-Langmuir space charge limits. The large current densities and …

Wavelength Modulation Spectroscopy With Diode Lasers, Ying Lu

Electrical & Computer Engineering Theses & Dissertations

Wavelength Modulation Spectroscopy is a non-intrusive technique which enables several parameters such as concentration, velocity, and temperature of a target specie to be measured. The method involves a modulation of a probe laser beam and detection at the fundamental, or any harmonic frequency, by a phase-sensitive apparatus. The theory of wavelength modulation is discussed. Effects of the finite value of the wavelength modulation index, together with the effects of any residual amplitude modulation that often occurs simultaneously in a diode laser, are included. It is shown that there are several advantages in using detection harmonics orders greater than the second. …

Improved Methods For Electroplating Cadmium Sulfide Thin Films, Brandon Kemp, Robert Engelken, Arif Raza, Wasim Aleem, Imran Khan, Chris Barber

Journal of the Arkansas Academy of Science

We report improved methods for electroplating cadmium sulfide (CMS) films. Aprevious problem was cracking/flaking of films deposited from organic solutions of elemental sulfur; attempts to improve adhesion via bath additives reduced grain size. Aqueous baths of thiosulfate ions yield cadmium-richness at low T temperatures (T), long deposition times, and/or poor bath stability. Developments in our work to be discussed include (1) plating ofuniform, adherent, and stoichiometric CdS from tetraethylene baths of CdCl 2 and elemental sulfur at T >70° C with minimal cracking/flaking, (2) improved uniformity/ adherence by use of CdL>, and (3) swept voltage methods in aqueous thiosulfate …

A Self-Consistent Numerical Method For Simulation Of Quantum Transport In High Electron Mobility Transistor; Part 1: The Boltzmann-Poisson-Schrodinger Solver, Rahim Khoie

Electrical & Computer Engineering Faculty Research

A self-consistent Boltzmann-Poisson-Schrödinger solver for High Electron Mobility Transistor is presented. The quantization of electrons in the quantum well normal to the heterojunction is taken into account by solving the two higher moments of Boltzmann equation along with the Schrödinger and Poisson equations, self-consistently. The Boltzmann transport equation in the form of a current continuity equation and an energy balance equation are solved to obtain the transient and steady-state transport behavior. The numerical instability problems associated with the simulator are presented, and the criteria for smooth convergence of the solutions are discussed. The current-voltage characteristics, transconductance, gate capacitance, and unity-gain …

A Self-Consistent Numerical Method For Simulation Of Quantum Transport In High Electron Mobility Transistor; Part Ii: The Full Quantum Transport, Rahim Khoie

Electrical & Computer Engineering Faculty Research

In Part I of this paper we reported a self-consistent Boltzmann-Schrodinger-Poisson simulator for HEMT in which only electrons in the first subband were assumed to be quantized with their motion restricted to 2 dimensions. In that model, the electrons in the second and higher subbands were treated as bulk system behaving as a 3 dimensional electron gas. In Part II of this paper, we extend our simulator to a self-consistent full-quantum model in which the electrons in the second subband are also treated as quantized 2 dimensional gas. In this model, we consider the electrons in the lowest two subbands …