Electronic Devices and Semiconductor Manufacturing Commons^™

Hybrid Multilevel Converters With Internal Cascaded/Paralleled Structures For Mv Electric Aircraft Applications, Fei Diao

Graduate Theses and Dissertations

Using on-board medium voltage (MV) dc distribution system has been a megatrend for next-generation electric aircraft systems due to its ability to enable a significant system mass reduction. In addition, it makes electric propulsion more feasible using MV power electronic converters. To develop high-performance high-density MV power converters, the emerging silicon carbide (SiC) devices are more attractive than their silicon (Si) counterparts, since the fast switch frequency brought by the SiC can effectively reduce the volume and weight of the filter components and thus increase the converter power density. From the converter topology perspective, with the MV dc distribution, the …

Effect Of Silicon Carbide On Electric Drivetrains Of Heavy-Duty Vehicles, Haley Solera

Electrical Engineering Undergraduate Honors Theses

The application of electro-mechanical motors in rigorous, high-temperature systems is constantly adapting to suit the growing needs of developers in the automotive, construction, and aerospace industries. With improved efficiency, torque, and environmental impact over conventional internal combustion engines, electric drive trains pose more than ample incentive for manufacturers to invest considerable resources toward the design of newer, better methods of electric propulsion. This paper discusses the motives behind the electrification of heavy-duty vehicles, the state-of-the-art technology currently available on the market, and the novel application of silicon carbide to electric drive trains as a means of increasing their heat tolerance, …

High-Temperature Optoelectronic Device Characterization And Integration Towards Optical Isolation For High-Density Power Modules, Syam Madhusoodhanan

Graduate Theses and Dissertations

Power modules based on wide bandgap (WBG) materials enhance reliability and considerably reduce cooling requirements that lead to a significant reduction in total system cost and weight. Although these innovative properties lead power modules to higher power density, some concerns still need to be addressed to take full advantage of WBG-based modules. For example, the use of bulky transformers as a galvanic isolation system to float the high voltage gate driver limits further size reduction of the high-temperature power modules. Bulky transformers can be replaced by integrating high-temperature optocouplers to scale down power modules further and achieve disrupting performance in …

Design And Optimization Of A High Power Density Silicon Carbide Traction Inverter, Tyler Adamson

Graduate Theses and Dissertations

This project was initiated with the goal of demonstrating a 3-phase silicon carbide based 150-kW 25 kW/L DC-AC power conversion unit capable of operation with coolant temperatures up to 90°C. The project goals were met and exceeded by first analyzing the established inverter topologies to find which one would yield the highest power density while still meeting electrical performance needs in the 150-kW range. Following topology selection, the smallest silicon carbide power module that met the electrical requirements of the system was found through experimental testing and simulation. After a power module selection was finalized, a DC link capacitor bank …

Switching Trajectory Control For High Voltage Silicon Carbide Power Devices With Novel Active Gate Drivers, Shuang Zhao

Graduate Theses and Dissertations

The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry due to their lower parasitics, higher blocking voltage, and higher thermal conductivity over their silicon (Si) counterparts. Applications of high voltage SiC power devices, generally 10 kV or higher, can significantly reduce the amount of the cascaded levels of converters in the distributed system, simplify the system by reducing the number of the semiconductor devices, and increase the system reliability.

However, the gate drivers for high voltage SiC devices are not available on the market. Also, the characteristics of the third generation 10 kV SiC MOSFETs …

Compact Modeling Of Sic Insulated Gate Bipolar Transistors, Sonia Perez

Graduate Theses and Dissertations

This thesis presents a unified (n-channel and p-channel) silicon/silicon carbide Insulated Gate Bipolar Transistor (IGBT) compact model in both MAST and Verilog-A formats. Initially, the existing MAST model mobility equations were updated using recently referenced silicon carbide (SiC) data. The updated MAST model was then verified for each device tested. Specifically, the updated MAST model was verified for the following IGBT devices and operation temperatures: n-channel silicon at 25 ˚C and at 125 ˚C; n-channel SiC at 25 ˚C and at 175 ˚C; and p-channel SiC at 150 ˚C and at 250 ˚C. Verification was performed through capacitance, DC output …

Design And Fabrication Of Inverter And Rectifier Modules For Indirect Matrix Converter Applications, Saikishore Talakokkula

Graduate Theses and Dissertations

In power converter applications, silicon carbide (SiC) power semiconductor devices are preferred over their silicon counterparts due to many advantages such as wide bandgap, high junction temperatures and low on-state resistance. The SiC devices provide reduced conduction and switching losses. Due to the above mentioned advantages the power conversion efficiency of SiC devices is better compared to that of silicon (Si) devices.

This thesis studies the implementation of 1200V/17A Normally-off SiC JFETs for an indirect matrix converter (IMC) application. A discussion on the parasitic inductance optimization is presented based on the electromagnetic simulation results extracted from the Ansoft Q3D extractor. …

The Development And Packaging Of A High-Density, Three-Phase, Silicon Carbide (Sic) Motor Drive, Jared Hornberger

Graduate Theses and Dissertations

Technology advances within the power electronics field are resulting in systems characterized by higher operating efficiencies, reduced footprint, minimal form factor, and decreasing mass. In particular, these attributes and characteristics are being inserted into numerous consumer applications, such as light-emitting diode lighting, compact fluorescent lighting, smart phones, and tablet PCs, to industrial applications that include hybrid, electric, and plug-in electric vehicles and more electric aircraft. To achieve the increase in energy efficiency and significant reduction in size and mass of these systems, power semiconductor device manufacturers are developing silicon carbide (SiC) semiconductor technology.

In this dissertation, the author discusses the …

A Silicon Carbide Linear Voltage Regulator For High Temperature Applications, Javier Antonio Valle Mayorga

Graduate Theses and Dissertations

Current market demands have pushed the capabilities of silicon to the edge. High temperature and high power applications require a semiconductor device to operate reliably in very harsh environments. This situation has awakened interests in other types of semiconductors, usually with a higher bandgap than silicon's, as the next venue for the fabrication of integrated circuits (IC) and power devices. Silicon Carbide (SiC) has so far proven to be one of the best options in the power devices field.

This dissertation presents the first attempt to fabricate a SiC linear voltage regulator. This circuit would provide a power management option …

Modeling And Characterization Of P-Type Silicon Carbide Gate Turn Off Thyristors, Osama Shihadeh Saadeh

Graduate Theses and Dissertations

Silicon carbide (SiC) power semiconductor devices have emerged in the past decade as the most promising technology for next generation power electronic applications ranging for electric vehicles to grid-connected power routing and conversion interfaces. Several devices have been developed, and even some have been released commercially, including diodes, MOSFETs, JFETs, thyristors, gate turn-off thyristors, and IGBTs. The model development, characterization and experimental validation of SiC p-type Gate Turn-off Thyristors (GTO) is presented in this work. The GTO device in this work is being used as part of a SiC-based solid-state fault current limiter under development at the University of Arkansas' …

Quantum Mechanical Calculations Of Monoxides Of Silicon Carbide Molecules, John W. Roberts Jr.

Theses and Dissertations

Modern semiconductor devices are principally made using the element silicon. In recent years, silicon carbide (SiC), with its wide band-gap, high thermal conductivity, and radiation resistance, has shown prospects as a semiconductor material for use in high temperature and radiation environments such as jet engines and satellites. A limiting factor in the performance of many SiC semiconductor components is the presence of lattice defects formed at oxide dielectric junctions during processing. Recent theoretical work has used small quantum mechanical systems embedded in larger molecular mechanics structures to attempt to better understand SiC surfaces and bulk materials and their oxidation. This …

Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis

Theses and Dissertations

Typical undoped bulk grown SiC shows n- or p-type conductivity due to residual impurities such as nitrogen, boron, or aluminum. In order to produce high resistivity material, vanadium can be used as a compensating dopant. Since vanadium is an amphoteric dopant in SiC, it produces either a donor state, V_Si⁴⁺(3d¹) → V_Si⁵⁺(3d⁰), or an acceptor state, V_Si⁴⁺(3d¹) → V_Si³⁺(3d²). Thus, vanadium doping can compensate both n- and p-type conductivity. In this work, vanadium doped and undoped 4H- and 6H-SiC grown …