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Electronic Devices and Semiconductor Manufacturing Commons™

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1991

Articles 1 - 11 of 11

Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Application Of Silicon Micromachining To Thermal Dissipation Issues In Wafer Scale Integrated Circuits, Edward Cosnyka Dec 1991

Application Of Silicon Micromachining To Thermal Dissipation Issues In Wafer Scale Integrated Circuits, Edward Cosnyka

Theses and Dissertations

The purpose of this research effort was to investigate the feasibility of applying the silicon micromachining technique to thermal management as applied to integrated circuits and wafer scale integration techniques. Three silicon micromachined structures and an untextured reference wafer were compared as heat-dissipating surfaces. These four surfaces were realized using 3-inch diameter, single crystal silicon wafers. The following structures were micromachined in silicon wafers using wet chemical, anisotropic etching and photolithographic techniques: (1) randomly spaced and sized pyramids in (100)-oriented silicon, (2) deep vertical-wall grooves in (110)-oriented silicon, and (3) micro-fluid channels in (100)-oriented silicon. The heat- dissipating silicon wafers …

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Evaluation Of An Interdigitated Gate Electrode Field-Effect Transistor (Igefet) For In Situ Resin Cure Monitoring, Thomas E. Graham Dec 1991

Evaluation Of An Interdigitated Gate Electrode Field-Effect Transistor (Igefet) For In Situ Resin Cure Monitoring, Thomas E. Graham

Theses and Dissertations

The purpose of this study was to design an Interdigitated Gate Electrode Field-Effect Transistor (IGEFET) and evaluate its performance as an in situ resin cure monitor. A commercially available resin was selected for the research, and rheological studies were performed to identify the resin's gelation point during isothermal cures at two selected temperatures. Additional rheological studies were performed to identify the resin's glass transition temperature. The interdigitated gate electrode of the IGEFET was coated with samples of the resin, and electrical measurements were performed while the resin cured. The chemical changes which occur in the resin as a result of …

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Robotic Tactile Sensors Fabricated From A Monolithic Silicon Integrated Circuit And A Piezoelectric Polyvinylidene Fluoride Thin Film, Craig S. Dyson Dec 1991

Robotic Tactile Sensors Fabricated From A Monolithic Silicon Integrated Circuit And A Piezoelectric Polyvinylidene Fluoride Thin Film, Craig S. Dyson

Theses and Dissertations

The purpose of this research effort was to design, fabricate, and test a tactile sensor system consisting of an external high impedance switch circuit, an external multiplexing circuit, and a tactile sensor IC. In order to accomplish this objective, a hardware design and selection process was implemented along with a logical test methodology. An external multiplexer circuit samples all of the array elements in 50 ms. The current prototype sensor has linearity spanning loads of 0.8 g to 135 g, a load resolution of 20 g, and a maximum bandwidth of 25 Hz. Using an elementary shape recognition algorithm the …

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Study Of Cathodoluminescence In Semiconductors, Mandakini V. Kale Oct 1991

Study Of Cathodoluminescence In Semiconductors, Mandakini V. Kale

Electrical & Computer Engineering Theses & Dissertations

Cathodoluminescence in Zn doped GaAs and ZnSe, the materials of interest for electron-beam controlled semiconductor switches, has been investigated. A new diagnostic technique, using telescopic setup of lenses, was developed to study the spatially resolved cathodoluminescence. The setup eliminated the light, other than rays from the sample, parallel to the optical axis, resulting in an enhanced spatial resolution. At high e-beam energies, light was detected, from the Zn layer region in the GaAs. It is proposed to be due to the radiative recombination of electron-hole pairs, created by the e-beam. For the polycrystalline ZnSe no light emission was detected. This …

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Cathodoluminescence Of Gaas, Tyler Smith Jul 1991

Cathodoluminescence Of Gaas, Tyler Smith

Electrical & Computer Engineering Theses & Dissertations

Cathodoluminescence of band-gap radiation across the bulk of a proposed semiconductor switch has been studied. Such a device relies on the efficient use of cathodoluminescence to modulate the conductivity of the switch. Diagnostics were configured to measure the intensity of band-gap radiation across the bulk of several switch samples. The measured results were compared to calculations based on a four energy level band-gap model which included two deep levels EL2 and HL10.

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Hybrid Wafer Scale Microcircuit Integration -- [ 5008213 ], Edward S. Kolesar Jr. Apr 1991

Hybrid Wafer Scale Microcircuit Integration -- [ 5008213 ], Edward S. Kolesar Jr.

AFIT Patents

A wafer scale integration arrangement wherein integrated circuit die of varying size, fabrication processes, and function are commonly mounted in the same host wafer using a filled epoxy material of special characteristics. The mounting epoxy material also serves as a substrate for the die interconnecting conductors in regions adjacent the mounted die. The described assembly also includes a newly available photosensitive polyimide material as a planarization and passivation covering for the die and hose wafer and as a mounting surface for an interconnecting metal conductor array. Multiple levels of interconnection metal. Fabrication processes for the die to host wafer attachment …

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Q Improvement Of A 5.2 Ghz Te011 Cavity By Incorporating Y1Ba2Cu3O7-X, R. Joseph Leclear Apr 1991

Q Improvement Of A 5.2 Ghz Te011 Cavity By Incorporating Y1Ba2Cu3O7-X, R. Joseph Leclear

Electrical & Computer Engineering Theses & Dissertations

Research is undertaken to apply high temperature superconducting material to improve the quality factor (Q) of a 5.2 GHz cylindrical resonant cavity. In particular, the approach is to electrophoretically deposit polycrystalline Y1Ba2Cu3O7-x (YBCO) on the conducting surface of the cavity cylinder. Spalling of the YBCO ceramic coating due to expansion and contraction of the cavity during sintering and testing is overcome by segmenting the cylinder. Results show that the Q of the cavity is increased over that of a copper cavity at temperatures below 60 K. At 20 K, improvement exceeds a factor …

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Monte Carlo Simulation Of Millimeter-Wave Gunn Effect Oscillators, Ramani Vaidyanathan Apr 1991

Monte Carlo Simulation Of Millimeter-Wave Gunn Effect Oscillators, Ramani Vaidyanathan

Electrical & Computer Engineering Theses & Dissertations

Monte Carlo simulations have been carried out to investigate the performance of microwave Gunn oscillators. Three separate aspects of the simulation problem have been comprehensively addressed in this work. First, the presence of an external circuit has been self-consistently incorporated into the calculations. The inclusion of the external circuit facilitates a study of the circuit controlled regime, and correctly models effects arising from the time dependent boundary conditions. Secondly, microscopic details of the electronic relaxation mechanisms which ultimately control the frequency response limits, have been taken into account through an iterative Monte Carlo-Poisson scheme. This procedure overcomes a potential shortcoming …

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Hybrid Wafer Scale Microcircuit Integration -- [ 4989063 ], Edward S. Kolesar Jr. Jan 1991

Hybrid Wafer Scale Microcircuit Integration -- [ 4989063 ], Edward S. Kolesar Jr.

AFIT Patents

A wafer scale integration arrangement wherein integrated circuit die of varying size, fabrication processes, and function are commonly mounted in the same host wafer using a filled epoxy material of special characteristics. The mounting epoxy material also serves as a substrate for the die interconnecting conductors in regions adjacent the mounted die. The described assembly also includes a newly available photosensitive polyimide material as a planarization and passivation covering for the die and host wafer and as a mounting surface for an interconnecting metal conductor array. Multiple levels of interconnection metal. Fabrication processes for the die to host wafer attachment …

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Properties Of Ruthenium Oxide Coatings, Roger M. Hawk, Kamesh V. Gadepally, David N. Patangia Jan 1991

Properties Of Ruthenium Oxide Coatings, Roger M. Hawk, Kamesh V. Gadepally, David N. Patangia

Journal of the Arkansas Academy of Science

Ruthenium oxide coatings have been deposited on titanium substrates using a flood coating process. These films were heat treated for varying times and temperatures. The resulting films subsequently were characterized by performing resistivity and SEM analyses. Resistivity of the ruthenium oxide coating was found to be extremely dependent upon the firing temperature. Effect of the process conditions and formulations of the coatings on the morphology with respect to their electrical characteristics is presented. Capacitors were fabricated using plates coated with ruthenium oxide coatings. Capacitance versus heat treatment temperatures are discussed and at one firing temperature (480'C), the capacitance was 50 …

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Novel Chemical Preparative Route For Semiconducting Mose2 Thin Films, K. C. Mandal, O. Savadogo Jan 1991

Novel Chemical Preparative Route For Semiconducting Mose2 Thin Films, K. C. Mandal, O. Savadogo

Faculty Publications

No abstract provided.

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