Electronic Devices and Semiconductor Manufacturing Commons^™

Sensitivity Analysis Of Algan/Gan Hemts To Process Variation, Adam J. Liddle

Theses and Dissertations

A sensitivity analysis of AlGaN/GaN HEMT performance on material and process variations was performed. Aluminum mole fraction, barrier thickness, and gate length were varied ± 5% over nominal values to determine how sensitive simulated device performance was to changes in these 3 parameters. Simulated data was generated with the Synopsys TCAD software suite using a physics-based HEMT model. To validate model performance, simulated data was correlated with experimental data, which consisted of wafer epilayer characterization data as well as DC and small-signal RF device performance data from 1-26 GHz. Trends were observed in the experimental data due to variations in …

An Ultrahigh Vacuum Complementary Metal Oxide Silicon Compatible Nonlithographic System To Fabricate Nanoparticle-Based Devices, Arghya Banerjee, Biswajit Das

Electrical & Computer Engineering Faculty Research

Nanoparticles of metals and semiconductors are promising for the implementation of a variety of photonic and electronic devices with superior performances and new functionalities. However, their successful implementation has been limited due to the lack of appropriate fabrication processes that are suitable for volume manufacturing. The current techniques for the fabrication of nanoparticles either are solution based, thus requiring complex surface passivation, or have severe constraints over the choice of particle size and material. We have developed an ultrahigh vacuum system for the implementation of a complex nanosystem that is flexible and compatible with the silicon integrated circuit process, thus …

Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions. …

Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey

Faculty Publications

This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (R_X) and quality factor (Q) with the resonators’ silicon layer thickness (t_Si). For identical lateral dimensions and PZT-layer thicknesses (t_PZT), the PZT-on-silicon resonator has higher resonant frequency (f_C), higher Q (5100 versus 140), lower R_X (51 Ω versus 205 Ω), and better linearity [third-order input intercept …

Piezo-Electrochemical Transducer Effect (Pect) Intercalated Graphite Micro-Electromechanical Actuators, Glen A. Kading

Theses and Dissertations

The purpose of this research is to investigate the Piezo-Electrochemical Transducer (PECT) effect in intercalated graphite as a possible mechanism of actuation for micro-electromechanical systems (MEMS). This dissertation presents the results of research into the PECT effect in H2SO4-intercalated graphitized carbon fibers, including both electrical and mechanical characteristics of this effect. PECT fibers achieve up to 1.7% strain at 1.4 V of applied potential. In contrast, the piezoelectric material polyvinylidene difluoride (PVDF) generates only 0.01% strain and polysilicon thermal expansion between 0.02 and 0.06% strain depending on the thermal conductivity of the particular polysilicon that the actuators are fabricated in. …

Hybrid Micro-Electro-Mechanical Tunable Filter, Edward M. Ochoa

Theses and Dissertations

While advantages such as good thermal stability and processing-chemical compatibilities exist for common monolithic-integrated micro-electro-mechanically tunable filters (MEM-TF) and MEM-tunable vertical cavity surface emitting lasers (MT-VCSEL), they often require full processing to determine device characteristics. Alternatively, the MEM actuators and the optical parts may be fabricated separately, then subsequently bonded. This "hybrid approach" potentially increases design flexibility. Since hybrid techniques allow integration of heterogeneous material systems, "best of breed" compound optoelectronic devices may be customized to enable materials groups to be optimized for tasks they are best suited. Thus, as a first step toward a hybrid (Al_xGa_{1- …}

Radio Frequency Mems Switch Contact Metal Selection, Ronald A. Coutu Jr., Paul E. Kladitis, Robert L. Crane, Kevin D. Leedy

AFIT Patents

A method for selecting metal alloys as the electric contact materials for microelectromechanical systems (MEMS) metal contact switches. This method includes a review of alloy experience, consideration of equilibrium binary alloy phase diagrams, obtaining thin film material properties and, based on a suitable model, predicting contact electrical resistance performance. After determination of a candidate alloy material, MEMS switches are conceptualized, fabricated and tested to validate the alloy selection methodology. Minimum average contact resistance values of 1.17 and 1.87 ohms are achieved for micro-switches with gold (Au) and gold-platinum (Au-(6.3 at %)Pt) alloy contacts. In addition, `hot-switched` life cycle test results …

Band Gap Engineering Of Two Dimensional Silicon Photonic Crystals By Oxidation And Oxide Etching, Makhin Thitsa

Electrical & Computer Engineering Theses & Dissertations

In this thesis a thorough analysis is presented on the effects of oxidation and oxide etching on the band structure of two dimensional silicon photonic crystals (2 D Si PC's). By using the plane wave expansion method (PWM), two structures of triangular lattice, namely, air cylinders embedded in a silicon background and silicon cylinders embedded in an air background are modeled. The thesis focuses on triangular lattice arrangement because for certain parameter values such a lattice can give rise to absolute band gap, which prohibits the propagation of either transverse electric (TE) or transverse magnetic (TM) polarizations.

During oxidation three …

Investigation Of Gate Current In Neutron Irradiated AlXGa1-XN/Gan Heterogeneous Field Effect Transistors Using Voltage And Temperature Dependence, Thomas E. Gray

Theses and Dissertations

The gate current of Al₂₇Ga₇₃N/GaN heterogeneous field effect transistors (HFETs) is investigated using current-voltage (IV) and current-temperature (IT) measurement demonstrating that trap assisted tunneling (TAT) is the primary current mechanism. A thermionic trap assisted tunneling (TTT) model is used with variables of Schottky barrier height, trap energy, donor density and trap density. This results in a sigma of 1.38x10^-8 A for IT data measured between 85K and 290K and for IV data measured between 0.0 V and -4.0 V. High energy (>0.5 MeV) neutron irradiation confirms an increase of gate current with fluence. An …

The Smart Helmet, Michael Walsh

Theses

This thesis addresses the design, development and testing of a wireless sensor network for a sports helmet. The objective is to monitor an athlete's physiology and also physical impacts using a sensor network. A detailed literature review is presented addressing currently available appropriate wireless technologies, sensors and their operation, packaging, interconnections and applications. It gives a brief introduction to each sensor used in the smart helmet, accelerometers, temperature sensors, heart rate and blood oxygen sensors, along with a review of possible sensors which could be added at a later stage. The specific sensors and other related components for the helmets …

Some Aspects Of Process Control In Semiconductor Manufacturing, Keelin Relihan, Shane Geraghty, Aidan O'Dwyer

Conference papers

This paper outlines some aspects of process control in semiconductor manufacturing. Starting with an outline of the semiconductor manufacturing process, the contribution will discuss temperature control of the chemical vapour deposition stage and the control of the wafer etching process, based on the industrial experience of the first two authors. Subsequently, the authors draw the attention of the semiconductor manufacturing community to the potential of properly tuned PID controllers for the achievement of simple and high performance control solutions.

Iii-Nitride Transistors With Capacitively Coupled Contacts, Grigory Simin, Z.-J. Yang, A. Koudymov, V. Adivarahan, M. Asif Khan

Faculty Publications

AlGaN∕GaNheterostructure field-effect transistor design using capacitively coupled contacts (C³HFET) is presented. Insulated-gate [C³ metal-oxide-semiconductor HFET(C³MOSHFET)] has also been realized. The capacitively coupled source, gate, and drain of C3 device do not require annealedOhmic contacts and can be fabricated using gate alignment-free technology. For typical AlGaN∕GaNheterostructures, the equivalent contact resistance of C³ transistors is below 0.6Ωmm. In rf-control applications, the C³HFET and especially the C³MOSHFET have much higher operating rf powers as compared to HFETs.C³ design is instrumental for studying the two-dimensional electron gas transport in other wide band gap …

Socio-Economic Impacts Of Computer Viruses In Tanzania, M Victor

Tanzania Journal of Engineering and Technology (TJET)

This paper reports on a research project conducted with an objective of identifying and assessing various approaches used by different computer users (Management, System Administrators and end users) in Tanzania to combat computer viruses (CVs), and to assess users' awareness level on CVs. Specifically, the study aimed at assessing the awareness level on CVs to the Tanzanian business community; analyze the socio -economic impact caused by CVs in Tanzania and; assess existing methods, capacity and limitations on controlling CVs in Tanzania. Data was collected using both questionnaires and interview from financial institutions such as NBC and BOT, and telecommunications sector …

Characterization And Quantum Efficiency Validation Of Ingaas Linear Focal Plane Array, Christopher Salenga Garcia

Electrical & Computer Engineering Theses & Dissertations

A 1x1024 InGaAs linear hybrid focal plane array (FPA) with CMOS readout was characterized at room temperature to analyze its electrical and optical properties and to measure its performance parameters.

The most important parameter of an FPA is the gain constant K, which allows conversion of the FPA output measurement unit from digital counts into the number of generated signal electrons. For FPAs with CMOS readout, the commonly used meanvariance method for determining K often underestimates its value. A more reliable method for finding K is the photon transfer technique, which is developed for FPAs with CCD readout. This …

Air Gap Error Compensation For Coaxial Transmission Line Method Of Electromagnetic Material Characterization, Ronald G. Fehlen

Theses and Dissertations

This research analyzes material characterization measurements from 50 Mhz to 3.05 GHz where an axially symmetric air gap exists between the sample material and the inner or outer conductor. Higher order fields are excited by the air gap and are accounted for through modal analysis methods. A root search minimizes the difference between the calculated scattering parameters from the modal method and the experimentally measured scattering parameters. The root is the permittivity and permeability of the material. This method is tested with a non-magnetic material and a heavily loaded magnetic material. An error analysis based on dimension measurement uncertainty is …

Computational Modeling Of The Dielectric Barrier Discharge (Dbd) Device For Aeronautical Applications, Christopher S. Charles

Theses and Dissertations

Dielectric Barrier Discharge (DBD) type devices, when used as plasma actuators, have shown significant promise for use in many aeronautical applications. Experimentally, DBD actuator devices have been shown to induce motion in initially still air, and to cause re-attachment of air flow over a wing surface at a high angle of attack. This thesis explores the numerical simulation of the DBD device in both a lD and 2D environment. Using well established fluid equation techniques, along with the appropriate approximations for the regime under which these devices will be operating, computational results for various conditions and geometries are explored. In …

Wideband Dual Polarized Directional Base Station Antenna, Francisco L. Lerma

Masters

The thesis presents a study of different microwave radiators for wireless applications in the frequency range of 2.2 – 2.5GHz. The performance of microstrip patch antennas and dual polarized dipole antennas were evaluated numerically and experimentally verified. A single microstrip patch and a four- element microstrip array were simulated, fabricated and tested. Simulation was carried out by the finite integration time domain (FITD) method. Polarization diversity is realised using crossed dipoles printed elements. For the crossed dipole elements, two different feed arrangements were studied. Parameters such as return loss, isolation, radiation pattern, gain and bandwidth were measured and found to …

Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled germanium quantum dots (QDs) were grown on Si(100)-(2×1) by pulsed laser deposition. In situ reflection-high energy electron diffraction (RHEED) and postdeposition atomic force microscopy are used to study the growth of the QDs. Several films of different thicknesses were grown at a substrate temperature of 400 °C using a Q-switched Nd:yttrium aluminum garnet laser (λ= 1064 nm, 40 ns pulse width, 23 J/cm ² fluence, and 10 Hz repetition rate). At low film thicknesses, hut clusters that are faceted by different planes, depending on their height, are observed after the completion of the wetting layer. With increasing film thickness, …

Adaptive Control Of A Projectile Fin Using Piezoelectric Elastic Beam, Smitha Mani, Sahjendra N. Singh, Surya Kiran Parimi, Woosoon Yim, Mohamed B. Trabia

Mechanical Engineering Faculty Research

No abstract provided.

Monte Carlo Simulation Analysis Of Electron Bombardment Of Gallium Nitride For Particle Detector Applications, James Gibson Bolitho

Electrical & Computer Engineering Theses & Dissertations

Gallium Nitride (GaN) is a relatively new and promising semiconductor material. It is finding its place in commercial applications such as transistors, light-emitting diodes, and in blue lasers. The large bandgap of GaN allows for very low canier densities and high breakdown voltages. This combination results in a greatly reduced background current and noise, and can withstand large applied voltages. In addition, GaN is sturdy and has strong mechanical properties. These are all ideal characteristics for application in high-energy particle detection.

In this thesis, the central goal is to assess the response of a GaN-based particle detector through numerical modeling. …

High-Temperature Ferromagnetism In Transition Metal Implanted Wide-Bandgap Semiconductors, Jeremy A. Raley

Theses and Dissertations

Material with both semiconductor and magnetic properties, which is commonly called a dilute magnetic semiconductor (DMS), will prove most useful in the fabrication of spintronic devices. In order to produce a DMS at above room temperature, transition metals (TMs) were implanted into host semiconductors of p-GaN, Al_0.35Ga_0.65N, or ZnO. Magnetic hysteresis measurements using a superconducting quantum interference device (SQUID) magnetometer show that some of the material combinations clearly exhibit ferromagnetism above room temperature. The most promising materials for creating spintronic devices using ion implantation are p-GaN:Mn, Al_0.35Ga_0.65N:Cr, and Fe-implanted ZnO nanotips on …

Using Multiple Mems Imus To Form A Distributed Inertial Measurement Unit, Ryan D. Hanson

Theses and Dissertations

MEMS IMUs are readily available in quantity and have extraordinary advantages over conventional IMUs in size, weight, cost, and power consumption. However, the poor performance of MEMS IMUs limits their use in more demanding military applications. It is desired to use multiple distributed MEMS IMUs to simulate the performance of a single, more costly IMU, using the theory behind Gyro-Free IMUs. A Gyro-Free IMU (GF-IMU) uses a configuration of accelerometers only to measure the three accelerations and three angular rotations of a rigid body in 3-D space. Theoretically, almost any configuration of six distributed accelerometers yields sufficient measurements to solve …

Acceleration Management: The Semiconductor Industry Confronts The 21st Century, Melissa M. Appleyard, C. N. Berglund, Craig Peterson, Richard W. Smith

Business Faculty Publications and Presentations

In the recent generations of semiconductor devices, the semiconductor industry has been accelerating towards the limits of the physical sciences. As a consequence, technology managers in that industry face seven major challenges, which will threaten progress: process, complexity, performance, power, density, productivity, and quality / reliability. We believe that confronting these challenges requires a new approach to technology management both within organizations and between organizations that form the backbone of the industry. We call this new approach Acceleration Management. Acceleration Management first requires that firms cultivate deep technical knowledge and inspire creative solutions to seemingly insoluble technical problems. The second …

Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]

Review Of The Product Development Process And Information Flow In The Manufacturing Industry: Problems And A Possible Wav Forward, E Opiyo

Tanzania Journal of Engineering and Technology (TJET)

No abstract provided.

Investigation Of Nanoporous Thin-Film Alumina Templates, Biswajit Das

Electrical & Computer Engineering Faculty Research

This paper presents the results of a systematic study of the fabrication of thin-film alumina templates on silicon and other substrates. Such templates are of significant interest for the low-cost implementation of semiconductor and metal nanostructure arrays. In addition, thin-film alumina templates on silicon have the potential for nanostructure integration with silicon electronics. Formation of thin-film alumina templates on silicon substrates was investigated under different fabrication conditions, and the dependence of pore morphology and pore formation rate on process parameters was evaluated. In addition, process conditions for improved pore size distribution and periodicity were determined. The template/silicon interface, important for …

Deviation Of Time-Resolved Luminescence Dynamics In Mwir Semiconductor Materials From Carrier Recombination Theory Predictions, Peter M. Johnson

Theses and Dissertations

Time resolved luminescence spectroscopy was used to characterize luminescence decay curves for a bulk InAs sample and an InAsSb type-I quantum-well sample over the first 3ns following excitation. The luminescence decay curves were then converted to carrier densities and used to find recombination coefficients that provided the least-squared-error solution of the rate equation describing carrier recombination. Recombination coefficients describing Shockley Read-Hall (A_SRH) radiative (B_rad) and Auger (C_Aug) recombination were determined at two different temperatures and four excitation powers, then analyzed for consistency and physical significance. For all of the resulting least …

Monte Carlo Analysis Of Millimeter-Wave Gan Based Gunn Effect Oscillators, Sridhara Viswanadham

Electrical & Computer Engineering Theses & Dissertations

Gunn diodes are one of the most common high frequency solid-state oscillators at the present time, and are considered as promising devices for millimeter and submillimeter wave applications. Monte Carlo studies of Gunn diodes based on bulk wurtzite GaN have been carried out in this thesis research. Two structures have been examined: (i) devices with conventional single notch structure and (ii) repetitive structures with serial segments to fashion a "multiple domain" device. Wurtzite GaN has been chosen because of the high drift velocity and because analytical expressions for the band structure have recently become available. Performance parameters of interest such …

Quantum Mechanical Calculations Of Monoxides Of Silicon Carbide Molecules, John W. Roberts Jr.

Theses and Dissertations

Modern semiconductor devices are principally made using the element silicon. In recent years, silicon carbide (SiC), with its wide band-gap, high thermal conductivity, and radiation resistance, has shown prospects as a semiconductor material for use in high temperature and radiation environments such as jet engines and satellites. A limiting factor in the performance of many SiC semiconductor components is the presence of lattice defects formed at oxide dielectric junctions during processing. Recent theoretical work has used small quantum mechanical systems embedded in larger molecular mechanics structures to attempt to better understand SiC surfaces and bulk materials and their oxidation. This …

Stress Analysis Of Silicon Carbide Microeletromechanical Systems Using Raman Spectroscopy, Stanley J. Ness

Theses and Dissertations

During the fabrication of Micro-Electro-Mechanical Systems (MEMS), residual stress is often induced in the thin films that are deposited to create these systems. These stresses can cause the device to fail due to buckling, curling, or fracture. Government and industry are looking for ways to characterize the stress during the deposition of thin films in order to reduce or eliminate device failure. Micro-Raman spectroscopy has been successfully used to analyze poly-silicon MEMS devices made with the Multi-User MEMS Process (MUMPS trade name). Micro-Raman spectroscopy was selected because it is nondestructive, fast and has the potential for in situ stress monitoring. …