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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Rapid-Prototyping Nanofabrication: Lcd-Based Projection Lithography And Physical Vapor Deposition, Sabeel Saleem Mohammmed Jun 2026

Rapid-Prototyping Nanofabrication: Lcd-Based Projection Lithography And Physical Vapor Deposition, Sabeel Saleem Mohammmed

University Honors Theses

The semiconductor industry's continued growth, driven in large part by demand for artificial intelligence hardware, has highlighted the need for greater workforce development in regions adjacent to major fabrication centers like Oregon's Silicon Forest. This capstone project lays the groundwork for a small scale and student led semiconductor fabrication lab at Portland State University by demonstrating two of the core steps in chip manufacturing: photolithography and thin film deposition. Rather than relying on conventional fixed reticles, this work explores a unique, low cost approach to patterning that uses an ultraviolet-compatible liquid crystal display (LCD) as a programmable reticle, allowing arbitrary …


Designing Enhanced Nonlinearity In Plasmonic Devices With Epsilon-Near-Zero Films, Kevin Tran Le May 2026

Designing Enhanced Nonlinearity In Plasmonic Devices With Epsilon-Near-Zero Films, Kevin Tran Le

Electrical Engineering and Computer Science (MS) Theses

The growing demand for energy-efficient optical information processing motivates compact nonlinear photonic devices that can operate at low power. Silicon photonics is a mature platform for linear optical functions, but nonlinear operation remains challenging because of its weak Kerr response, two-photon absorption at telecommunication wavelengths, and limited compatibility with deeply subwavelength plasmonic confinement. This thesis computationally investigates epsilon-near-zero thin films integrated into plasmonic waveguide architectures as a route toward stronger light–matter interaction in compact nonlinear devices.

Two waveguide geometries are examined: a hybrid metal-insulator-metal plasmonic slab waveguide incorporating an ultrathin indium tin oxide epsilon-near-zero layer (5–50 nm), and a dielectric-loaded …


Nanomagnet Based Reservoir Computing And Quantum Control, Fahim F. Chowdhury Jan 2026

Nanomagnet Based Reservoir Computing And Quantum Control, Fahim F. Chowdhury

Theses and Dissertations

Conventional CMOS scaling has driven remarkable advances in computing but faces increasing physical and energy constraints, motivating alternative computing paradigms that integrate memory and computation while improving energy efficiency. Nanoscale magnetic systems offer a promising platform for such approaches because their intrinsic nonlinear dynamics and localized magnetic fields can support both classical and quantum information processing. This thesis investigates nanomagnetic systems for physical reservoir computing and, with primary emphasis, for localized quantum control of spin qubits.

The first part explores dipole-coupled nanomagnet arrays as physical reservoirs. Micromagnetic simulations demonstrate nonlinear dynamical behavior with high short-term memory and parity-check capacity, enabling …


Next-Generation Computing Hardware: Advancements In Tantalum Oxide Reram For Ai And Neuromorphic Applications, Rajas Ravindra Mathkari Jan 2026

Next-Generation Computing Hardware: Advancements In Tantalum Oxide Reram For Ai And Neuromorphic Applications, Rajas Ravindra Mathkari

Electronic Theses & Dissertations (2024 - present)

The rapid development of artificial intelligence, machine learning, and data-intensive computing has exposed the fundamental limitations of conventional von Neumann architectures, in which energy and time are continuously lost transferring data between physically separate memory and processing units. In contrast, the human brain performs complex computations directly at the point of memory storage through billions of parallel synaptic connections, a paradigm known as in-memory computing. Realizing this in hardware requires memory devices that are fast, energy-efficient, non-volatile, and capable of storing multiple resistance levels in an analog manner. Resistive Random Access Memory (ReRAM) based on tantalum oxide (TaOx) is one …


Colloidal Quantum Dots: A Path Toward Making Mid-Wave Infrared Sensing A Ubiquitous Technology, Mohammad Mostafa Al Mahfuz May 2025

Colloidal Quantum Dots: A Path Toward Making Mid-Wave Infrared Sensing A Ubiquitous Technology, Mohammad Mostafa Al Mahfuz

Dissertations

Reducing the size, weight, power consumption, and cost (SWaP-C) of infrared detectors could make infrared sensing more widely accessible. In the critical mid-wavelength infrared (MWIR) spectral range of 3-5 gm, commercially available detectors are limited by the high costs associated with epitaxial growth and hybridization, as well as the need for cryogenic cooling. These factors restrict their use to defense and space applications.

Colloidal quantum dots present a promising material for overcoming these challenges, with wafer-scale monolithic integration and Auger suppression being the key material capabilities to minimize the sensor's SWaP-C. Infrared sensors based on colloidal quantum dots have been …


Functional Devices Based On Freestanding 2d Materials, Shijue Xu May 2025

Functional Devices Based On Freestanding 2d Materials, Shijue Xu

McKelvey School of Engineering Graduate Student Theses & Dissertations

Two-dimensional (2D) materials have attracted extensive attention in the field of nanoelectronics due to their atomic-scale thickness, high surface-to-volume ratio, tunable electronic properties, and compatibility with low-temperature processing. These characteristics make them highly suitable for the construction of emerging device architectures, particularly in both ionic and electronic devices.

In this work, we investigate the application of 2D materials in two distinct classes of devices: ionically-driven memristors and electronically-dominated metal–semiconductor contacts. For the memristor study, we fabricate heterostructure-based resistive switching devices using h-BN and WSe2 as active layers. These 2D material-based memristors exhibit stable power consumption loops and high linearity …


Advancing 4h-Silicon Carbide Power Mosfets Through Three-Dimensional Technology Computer Aided Design Optimization, Skylar A. Deboer Jan 2025

Advancing 4h-Silicon Carbide Power Mosfets Through Three-Dimensional Technology Computer Aided Design Optimization, Skylar A. Deboer

Electronic Theses & Dissertations (2024 - present)

This research contributes to the advancement of 1.2 kV 4H-Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) through the development and implementation of sophisticated three-dimensional Technology Computer-Aided Design (3D TCAD) methodologies. These advanced simulation techniques enable comprehensive evaluation of innovative unit cell architectures that remain inaccessible to conventional two-dimensional (2D) TCAD approaches. By leveraging these 3D simulation capabilities, this work facilitates significant improvements in both the performance and reliability of next-generation wide-bandgap power devices.

Power devices convert electrical energy between different forms throughout the power grid making them essential in applications ranging from personal electronics, electric vehicles, renewable energy systems, industrial …


Epitaxial Quantum Dot Scintillators With Monolithic Photodetector Integration: Physics, Fabrication And Characterization Of Materials And Devices, Allan Oreave Minns Jan 2025

Epitaxial Quantum Dot Scintillators With Monolithic Photodetector Integration: Physics, Fabrication And Characterization Of Materials And Devices, Allan Oreave Minns

Electronic Theses & Dissertations (2024 - present)

This dissertation discloses the physics, fabrication, and characterization of high-performance scintillator detectors based on epitaxial InAs quantum dots (QDs) in GaAs. The detector crystals grown include monolithically integrated In0.35GaAs photodetectors with Al0.92-0.6In0.03-0.35Ga0.05As metamorphic buffer layers (MBL). A device fabrication process was developed for the lithographic patterning, chemical etching, contact metallization and readout integration of materials grown by means of molecular beam epitaxy (MBE) on 3-inch GaAs (001) wafers. Low capacitance integration with readout electronics was achieved through wire bonds to custom printed circuit boards (PCBs) with commercial components.

The relationship between device …


Ge/Sige Quantum Wells: Material For The Post-Moore Era, Troy Alexander Hutchins-Delgado Dec 2024

Ge/Sige Quantum Wells: Material For The Post-Moore Era, Troy Alexander Hutchins-Delgado

Optical Science and Engineering ETDs

This dissertation demonstrates high-quality germanium quantum wells on a 200 mm silicon wafer platform, enabling novel device possibilities. Partnering with a commercial silicon-germanium epitaxy supplier, we obtained shallow, undoped germanium quantum wells with high-crystalline quality, confirmed through x-ray diffraction, secondary ion mass spectroscopy, high-resolution scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. Hall bar devices fabricated on single quantum wells revealed that surface preparation can tune transport properties while maintaining peak mobilities around 105 cm2V−1s−1. Manganese-germanide spintronic contacts were integrated via solid-state reaction, with contact quality assessed through Schottky diodes, transfer length …


Fabrication And Characterization Of A Monolithic Photonic Integrated Circuit With High-Aspect Ratio Photonic Device Structures, Sami A. Nazib Jul 2024

Fabrication And Characterization Of A Monolithic Photonic Integrated Circuit With High-Aspect Ratio Photonic Device Structures, Sami A. Nazib

Optical Science and Engineering ETDs

The focus of this work was to create a process to fabricate an InP-based Photonic Integrated Circuit (PIC). The design of the PIC required the photonic components of this device to be created by deep etching of an epitaxially-grown multilayer structure. Therefore, a novel dry etching process was developed to produce very high aspect- ratio (HAR) features. This process not only involved the development of dry etch chemistry but also the engineering of a metal mask structure. The next step of the challenge was to use a polymer-based material that would have two functions: cladding for the etched photonic components …


Photoluminescence Switching In Quantum Dots Connected With Carboxylic Acid And Thiocarboxylic Acid End-Group Diarylethene Molecules, Ephraiem S. Sarabamoun, Pramod Aryal, Jonathan M. Bietsch, Maurice Curran, Sugandha Verma, Grayson Johnson, Lucy U. Yoon, Amelia G. Reid, Esther H. R. Tsai, Charles W. Machan, Christopher Paolucci, Guijun Wang, Joshua J. Choi Jan 2024

Photoluminescence Switching In Quantum Dots Connected With Carboxylic Acid And Thiocarboxylic Acid End-Group Diarylethene Molecules, Ephraiem S. Sarabamoun, Pramod Aryal, Jonathan M. Bietsch, Maurice Curran, Sugandha Verma, Grayson Johnson, Lucy U. Yoon, Amelia G. Reid, Esther H. R. Tsai, Charles W. Machan, Christopher Paolucci, Guijun Wang, Joshua J. Choi

Chemistry & Biochemistry Faculty Publications

We contrast the switching of photoluminescence (PL) of PbS quantum dots (QDs) cross-linked with photochromic diarylethene molecules with different end groups, 4,4′-(1-cyclopentene-1,2-diyl)bis[5-methyl-2-thiophenecarboxylic acid] (1C) and 4,4′-(1-cyclopentene-1,2-diyl)bis[5-methyl-2-thiophenethiocarboxylic acid] (2T). Our results show that the QDs cross-linked with the carboxylic acid end group molecules (1C) exhibit a greater amount of switching in photoluminescence intensity compared to QDs cross-linked with the thiocarboxylic acid end group (2T). We also demonstrate that regardless of the molecule used, greater switching amounts are observed for smaller quantum dots. Varying these parameters allows for the fabrication of photoswitches with tunable PL change. We relate these observations to the …


Impact Of Silicon Ion Irradiation On Aluminum Nitride-Transduced Microelectromechanical Resonators, David D. Lynes, Joshua Young, Eric Lang, Hengky Chandrahalim Nov 2023

Impact Of Silicon Ion Irradiation On Aluminum Nitride-Transduced Microelectromechanical Resonators, David D. Lynes, Joshua Young, Eric Lang, Hengky Chandrahalim

Faculty Publications

Microelectromechanical systems (MEMS) resonators use is widespread, from electronic filters and oscillators to physical sensors such as accelerometers and gyroscopes. These devices' ubiquity, small size, and low power consumption make them ideal for use in systems such as CubeSats, micro aerial vehicles, autonomous underwater vehicles, and micro-robots operating in radiation environments. Radiation's interaction with materials manifests as atomic displacement and ionization, resulting in mechanical and electronic property changes, photocurrents, and charge buildup. This study examines silicon (Si) ion irradiation's interaction with piezoelectrically transduced MEMS resonators. Furthermore, the effect of adding a dielectric silicon oxide (SiO2) thin film is …


Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula Dec 2022

Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula

Dissertations

Wide bandgap (WBG) semiconductors play a crucial role in the current solid-state lighting technology. The AlGaN compound semiconductor is widely used for ultraviolet (UV) light-emitting diodes (LEDs), however, the efficiency of these LEDs is largely in a single-digit percentage range due to several factors. Until recently, AlInN alloy has been relatively unexplored, though it holds potential for light-emitters operating in the visible and UV regions. In this dissertation, the first axial AlInN core-shell nanowire UV LEDs operating in the UV-A and UV-B regions with an internal quantum efficiency (IQE) of 52% are demonstrated. Moreover, the light extraction efficiency of this …


Void-Semiconductor Gaas Photonic Crystal Surface-Emitting Lasers By Epitaxial Regrowth And Single-Epitaxy Methods, Kevin James Reilly Dec 2022

Void-Semiconductor Gaas Photonic Crystal Surface-Emitting Lasers By Epitaxial Regrowth And Single-Epitaxy Methods, Kevin James Reilly

Nanoscience and Microsystems ETDs

Monolithic semiconductor lasers including edge-emitting lasers (EELs) and vertical-cavity surface-emitting lasers (VCSELs) fail to realize simultaneous achievement of both high-power high-quality beams due to intrinsic limitations of their resonant cavity. Photonic crystal surface emitting lasers (PCSELs) address these structural limitations through employment of a two-dimensional photonic crystal (PC) cavity that creates feedback at a single wavelength for laterally scalable devices. This function of the PC allows PCSELs to power scale with area while maintaining single-mode emission required for diffraction-limited beams. In this way, PCSELs fulfill an industry demand for high-power high-quality lasing from a single chip.

Early PCSELs were fabricated …


Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi Dec 2022

Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi

Graduate Theses and Dissertations

This work focuses on the investigation of gate-defined quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe2) as a means to unravel mesoscopic physical phenomena such as valley-contrasting physics in WSe2 flakes and its potential application as qubit, as well as realizing gate-controlled quantum dots based on elementaltellurium nanostructures which may unlock the topological nature of the host material carriers such as Weyl states in tellurium nanowires.The fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2 are reported. The gate electrodes in the device design are located above and below the WSe2 nanoflakes to accumulate …


Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles Nov 2022

Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles

Mechanical Engineering ETDs

Lead zirconate titanate (PZT) has been a material of interest for sensor, actuator, and transducer applications in microelectromechanical systems (MEMS). This is due to their favorable piezoelectric, pyroelectric and ferroelectric properties. While various methods are available to deposit PZT thin films, radio frequency (RF) magnetron sputtering was selected to provide high quality PZT films with the added capability of batch processing. These sputter deposited PZT films were characterized to determine their internal film stress, Young’s modulus, composition, and structure. After characterization, the sputtered PZT samples were poled using corona poling and direct poling methods. As a means of comparison, commercially …


Design Of Arbitrary Planar Optical Devices With Full Phase Control Using Nanoimprinting Of Refractive Index, Matthew Panipinto Nov 2022

Design Of Arbitrary Planar Optical Devices With Full Phase Control Using Nanoimprinting Of Refractive Index, Matthew Panipinto

All Theses

Planar optical devices offer a lightweight solution to the constraints found in traditional optical devices. While subwavelength patterning of optics offers attractive performance and size, traditional fabrication methods demand a trade-off between resolution and throughput that presents a significant hurdle for the widespread use of subwavelength devices. Nanoimprinting of refractive index (NIRI) is a novel fabrication method pioneered in previous work that offers promise in mitigating the throughput issues that hamstring traditional fabrication methods. However, NIRI has not been shown to impart full $2\pi$ phase control in planar optical devices, nor has a method for fabricating arbitrary designs using the …


Surface-Wave Coupling In Double Floquet Sheets Supporting Phased Temporal Wood Anomalies, Ya-Wen Tsai, Yao-Ting Wang, Emanuele Galiffi, Andrea Alù, Ta-Jen Yen Jul 2022

Surface-Wave Coupling In Double Floquet Sheets Supporting Phased Temporal Wood Anomalies, Ya-Wen Tsai, Yao-Ting Wang, Emanuele Galiffi, Andrea Alù, Ta-Jen Yen

Advanced Science Research Center

We investigate symmetry-selective surface-mode excitation in a general periodically time-modulated double-layer system, where the modulation of the two layers has a constant phase difference. By deriving a semi-analytic transfer matrix formalism of a Drude-dispersive double-layer structure with periodic time-modulation, we calculate the scattering amplitudes and the corresponding transmission coefficient. Our results show that the phase-difference between the modulation of the two sheets plays an essential role in significantly enhancing and selectively exciting either the even or odd surface mode with high efficiency. We verify our calculations with full-wave time-domain simulations, showing that efficient switching between the surface-wave excitation of the …


Characterization Of Electrophoretic Deposited Zinc Oxide Nanopartices For The Fabrication Of Next-Generation Nanoscale Electronic Applications, Fawwaz Abduh A. Hazzazi Jul 2022

Characterization Of Electrophoretic Deposited Zinc Oxide Nanopartices For The Fabrication Of Next-Generation Nanoscale Electronic Applications, Fawwaz Abduh A. Hazzazi

LSU Doctoral Dissertations

Several reports state that it is crucial to analyze nanoscale semiconductor materials and devices with potential benefits to meet the need for next-generation nanoelectronics, bio, and nanosensors. The progress in the electronics field is as significant now, with modern technology constantly evolving and a greater focus on more efficient robust optoelectronic applications. This dissertation focuses on the study and examination of the practicality of Electrophoretic Deposition (EPD) of zinc oxide (ZnO) nanoparticles (NPs) for use in semiconductor applications.

The feasibility of several synthesized electrolytes, with and without surfactants and APTES surface functionalization, is discussed. The primary objective of this study …


Hinged Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim May 2022

Hinged Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim

AFIT Patents

A passive microscopic Fabry-Pérot Interferometer (FPI) sensor includes a three-dimensional microscopic optical structure formed on a cleaved tip of the optical fighter using a two-photon polymerization process on a photosensitive polymer by a three-dimensional micromachining device. The three-dimensional microscopic optical structure having a hinged optical layer pivotally connected to a distal portion of a suspended structure. A reflective layer is deposited on a mirror surface of the hinged optical layer while in an open position. The hinged optical layer is subsequently positioned in the closed position to align the mirror surface to at least partially reflect a light signal back …


Method Of Making Hinged Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim Mar 2022

Method Of Making Hinged Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim

AFIT Patents

A method is provided for fabricating a passive optical sensor on a tip of an optical fiber. The method includes perpendicularly cleaving a tip of an optical fiber and mounting the tip of the optical fiber in a specimen holder of a photosensitive polymer three-dimensional micromachining machine. The method includes forming a three-dimensional microscopic optical structure within the photosensitive polymer that comprises a two cavity Fabry-Perot Interferometer (FPI) having a hinged optical layer that is pivotally coupled to a suspended structure. The method includes removing an uncured portion of the photosensitive polymer using a solvent. The method includes depositing a …


An Archimedes' Screw For Light, Emanuele Galiffi, Paloma A. Huidobro, J. B. Pendry Jan 2022

An Archimedes' Screw For Light, Emanuele Galiffi, Paloma A. Huidobro, J. B. Pendry

Advanced Science Research Center

An Archimedes’ Screw captures water, feeding energy into it by lifting it to a higher level. We introduce the first instance of an optical Archimedes’ Screw, and demonstrate how this system is capable of capturing light, dragging it and amplifying it. We unveil new exact analytic solutions to Maxwell’s Equations for a wide family of chiral space-time media, and show their potential to achieve chirally selective amplification within widely tunable parity-time-broken phases. Our work, which may be readily implemented via pump-probe experiments with circularly polarized beams, opens a new direction in the physics of time-varying media by merging the rising …


Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith Dec 2021

Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith

AFIT Patents

A passive microscopic Fabry-Pérot Interferometer (FPI) sensor an optical fiber a three-dimensional microscopic optical structure formed on a cleaved tip of an optical fighter that reflects a light signal back through the optical fiber. The reflected light is altered by refractive index changes in the three-dimensional structure that is subject to at least one of: (i) thermal radiation; and (ii) volatile organic compounds.


Method Of Making Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith Oct 2021

Method Of Making Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith

AFIT Patents

A method of making passive microscopic Fabry-Pérot Interferometer (FPI) sensor includes forming a three-dimensional microscopic optical structure on a cleaved tip of an optical fiber that reflects a light signal back through the optical fiber. The reflected light is altered by refractive index changes in the three-dimensional structure that is subject to at least one of: (i) thermal radiation; and (ii) volatile organic compounds.


Development Of Light Actuated Chemical Delivery Platform On A 2-D Array Of Micropore Structure, Hojjat Rostami Azmand, Hojjat Rostami Azmand Jan 2021

Development Of Light Actuated Chemical Delivery Platform On A 2-D Array Of Micropore Structure, Hojjat Rostami Azmand, Hojjat Rostami Azmand

Dissertations and Theses

Localized chemical delivery plays an essential role in the fundamental information transfers within biological systems. Thus, the ability to mimic the natural chemical signal modulation would provide significant contributions to understand the functional signaling pathway of biological cells and develop new prosthetic devices for neurological disorders. In this paper, we demonstrate a light-controlled hydrogel platform that can be used for localized chemical delivery in a high spatial resolution. By utilizing the photothermal behavior of graphene-hydrogel composites confined within micron-sized fluidic channels, patterned light illumination creates the parallel and independent actuation of chemical release in a group of fluidic ports. The …


Perovskite Thin Films Annealed In Supercritical Fluids For Efficient Solar Cells, Gilbert Annohene Jan 2021

Perovskite Thin Films Annealed In Supercritical Fluids For Efficient Solar Cells, Gilbert Annohene

Theses and Dissertations

In the field of photovoltaics, scientists and researchers are working fervently to produce a combination of efficient, stable, low cost and scalable devices. Methylammonium lead trihalide perovskite has attracted intense interest due to its high photovoltaic performance, low cost, and ease of manufacture. Their high absorption coefficient, tunable bandgap, low-temperature processing, and abundant elemental constituent provide innumerable advantages over other thin film absorber materials. Since the perovskite film is the most important in the device, morphology, crystallization, compositional and interface engineering have been explored to boost its performance and stability. High temperatures necessary for crystallization of organic-inorganic hybrid perovskite films …


Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel Dec 2020

Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel

Theses

The scalability and power efficiency of the conventional CMOS technology is steadily coming to a halt due to increasing problems and challenges in fabrication technology. Many non-volatile memory devices have emerged recently to meet the scaling challenges. Memory devices such as RRAMs or ReRAM (Resistive Random-Access Memory) have proved to be a promising candidate for analog in memory computing applications related to inference and learning in artificial intelligence. A RRAM cell has a MIM (Metal insulator metal) structure that exhibits reversible resistive switching on application of positive or negative voltage. But detailed studies on the power consumption, repeatability and retention …


Development And Characterization Of Metal Contacts For Graded Composition Ingan Solar Cells, Reem E. Alhelais Dec 2020

Development And Characterization Of Metal Contacts For Graded Composition Ingan Solar Cells, Reem E. Alhelais

Graduate Theses and Dissertations

There is an increasing demand for high-power electronic components and optoelectronic devices with low-loss and high efficiency. III-nitride semiconductor materials have demonstrated great potential for high-power, high-frequency, and high-temperature applications because of their remarkable and wide-ranging electronic and physical properties. These material systems, including alloys of AlN, GaN, and InN, are currently being explored for their potential to develop efficient photovoltaic cells. They can potentially achieve higher efficiency because of their very high direct wide band edge, absorption coefficients, and resistance to defects. The compositionally graded Group III-nitride alloy allows access to a large range of energies by varying the …


Development Of Integrated Zinc Oxide Nanorods Coated Glass Substrate Sensing Device, Mohd Yusof Haziezol Helmi Feb 2020

Development Of Integrated Zinc Oxide Nanorods Coated Glass Substrate Sensing Device, Mohd Yusof Haziezol Helmi

Student Works (2020-2029)

A simple and practical cost-effective integrated zinc oxide (ZnO) nanorods coated glass substrate sensing device for humidity and formaldehyde vapor sensing applications is reported. The developed sensor device is composed of a commercial light-emitting diode (LED) and photodiode that correspondingly served as light source and detector which precisely positioned on a 3D printed sensor platform. A receiver circuit and Arduino platform were employed for signal amplification and processing. A uniform ZnO nanorods coating were grown on the surface of glass substrate via hydrothermal method by controlling the growth durations and coating length. A standard reference for the optimum working condition …


Electric Field Control Of Fixed Magnetic Skyrmions For Energy Efficient Nanomagnetic Memory, Dhritiman Bhattacharya Jan 2020

Electric Field Control Of Fixed Magnetic Skyrmions For Energy Efficient Nanomagnetic Memory, Dhritiman Bhattacharya

Theses and Dissertations

To meet the ever-growing demand of faster and smaller computers, increasing number of transistors are needed in the same chip area. Unfortunately, Silicon based transistors have almost reached their miniaturization limits mainly due to excessive heat generation. Nanomagnetic devices are one of the most promising alternatives of CMOS. In nanomagnetic devices, electron spin, instead of charge, is the information carrier. Hence, these devices are non-volatile: information can be stored in these devices without needing any external power which could enable computing architectures beyond traditional von-Neumann computing. Additionally, these devices are also expected to be more energy efficient than CMOS devices …