Electronic Devices and Semiconductor Manufacturing Commons^™

Investigation And Characterization Of Silicon Carbide Power Mosfets, Vincent Hassman

Electrical Engineering and Computer Science Undergraduate Honors Theses

As engineers constantly seek to make solar power systems smaller, cheaper, and more efficient, technological enhancements in the electronics that run them are required. One of the most fundamental electronic components of any solar system is the inverter, which takes DC current from the solar cell and turns it into AC current that is supported by the grid. This is done with metal oxide semiconductor field effect transistors (MOSFETs). Through more advanced MOSFET technology, inverters can switch at a higher frequency, increasing efficiency and reducing size and cost.

MOSFET performance can be enhanced by swapping the traditional silicon substrate with …

Cleaning And Characterization Of Chemical Vapor Deposited Graphene For Nanoelectronic Device Development, Sakib Ishraq

Graduate Theses, Dissertations, and Problem Reports (ETD)

Nanoelectronic devices based on graphene are a promising technology that combines the sensitivity and specificity of ion and element recognition with the accuracy and precision of electronics. The detection principle is based on the interaction of the target molecules with the nanodevice surface, which generates a measurable electrical signal. In the current study, graphene and its derivatives, synthesis and fabrication of high quality, good uniformity, and low defects graphene have been investigated as they are critical for high-performance and highly sensitive devices. Among many synthesis methods, chemical vapor deposition (CVD), have been used that needs to be transferred from the …

Characterization Of Flexible Hybrid Electronics Using Stretchable Silver Ink And Ultra-Thin Silicon Die, Joshua A. Ledgerwood

Master's Theses

Flexible Hybrid Electronics (FHEs) offer many advantages to the future of wearable technology. By combining the dynamic performance of conductive inks, and the functionality of ultra-thinned, traditional IC technology, new FHE devices allow for development of applications previously excluded by relying on a specific type of electronics technology.

The characterization and reliability analysis of stretchable conductive inks paired with ultra-thin silicon die in theµm range was conducted. A silver based ink designed to be stretchable was screen printed on a TPU substrate and cured using box oven, conveyor convection oven, and photonic curing processes. Reliability tests were conducted including a …

Characterization And Testing Of A 5.8 Kv Sic Pin Diode For Electric Space Propulsion Applications, Alexandra Toftul

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Inductive Pulsed Plasma Thrusters (IPPTs) are a type of in-space propulsion that has multiple advantages over conventional chemical propulsion for long-duration, deep space missions. Existing IPPT prototypes utilize spark gap switches, however these are subject to corrosion problems that make them unreliable for long-term use. Recent advances in solid state switching technology have opened up a variety of switching options that could provide greater reliability, controllability, and increased energy efficiency. Taking advantage of this, a novel thruster drive circuit topology containing a high-power silicon controlled rectifier (SCR) and series fast recovery diode (FRD) is proposed that is expected to increase …

Dc, Rf, And Thermal Characterization Of High Electric Field Induced Degradation Mechanisms In Gan-On-Si High Electron Mobility Transistors, Matthew Anthony Bloom

Master's Theses

Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are becoming increasingly popular in power amplifier systems as an alternative to bulkier vacuum tube technologies. GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low dielectric constant, and a high critical breakdown field. The aforementioned qualities make GaN a prime candidate for high-power and radiation-hardened applications using a smaller form-factor. Several different types of semiconductor substrates have been considered for their thermal properties and cost-effectiveness, and Silicon (Si) has been of increasing interest due to a balance between both factors.

In this thesis, the DC, …

Growth And Characterization Of Silicon Carbide Thin Films Using A Nontraditional Hollow Cathode Sputtering Technique, James Huguenin-Love

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC.

Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed …