Electronic Devices and Semiconductor Manufacturing Commons^™

Design Tunneling Transistor And Schottky Junction Solar Cell Using Van Der Waals Semiconductor Heterostructure, Md Azmot Ullah Khan

LSU Doctoral Dissertations

Transition metal di-chalcogenide (TMDC) materials, being semiconductor in nature, offer Two-dimensional (2D) materials such as graphene and molybdenum disulfide (MoS₂) possess unique and unusual properties that are particularly applicable to nanoelectronics and photovoltaic devices. In this dissertation, four different projects have been done that encompass the implementation of these materials to improve the performance of future transistors and Schottky junction solar cells. In chapter 2, an analytical current transport model of a dual gate tunnel field-effect transistor (TFET) is developed by utilizing the principle of band-to-band tunneling (BTBT) and MoS₂ as the channel material. Later, using this …

Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves

Graduate Theses, Dissertations, and Problem Reports

Having been theorized in 1947, it was not until 2004 that graphene was first isolated. In the years since its isolation, graphene has been the subject of intense, world-wide study due to its incredibly diverse array of useful properties. Even though many billions of dollars have been spent on its development, graphene has yet to break out of the laboratory and penetrate mainstream industrial applications markets. This is because graphene faces a ‘grand challenge.’ Simply put, there is currently no method of manufacturing high-quality graphene on the industrial scale. This grand challenge looms particularly large for electronic applications where the …

Modeling Of Thermally Aware Carbon Nanotube And Graphene Based Post Cmos Vlsi Interconnect, K M Mohsin

LSU Doctoral Dissertations

This work studies various emerging reduced dimensional materials for very large-scale integration (VLSI) interconnects. The prime motivation of this work is to find an alternative to the existing Cu-based interconnect for post-CMOS technology nodes with an emphasis on thermal stability. Starting from the material modeling, this work includes material characterization, exploration of electronic properties, vibrational properties and to analyze performance as a VLSI interconnect. Using state of the art density functional theories (DFT) one-dimensional and two-dimensional materials were designed for exploring their electronic structures, transport properties and their circuit behaviors. Primarily carbon nanotube (CNT), graphene and graphene/copper based interconnects were …

Electronic And Magnetic Properties Of Two-Dimensional Nanomaterials Beyond Graphene And Their Gas Sensing Applications: Silicene, Germanene, And Boron Carbide, Sadegh Mehdi Aghaei

FIU Electronic Theses and Dissertations

The popularity of graphene owing to its unique properties has triggered huge interest in other two-dimensional (2D) nanomaterials. Among them, silicene shows considerable promise for electronic devices due to the expected compatibility with silicon electronics. However, the high-end potential application of silicene in electronic devices is limited owing to the lack of an energy band gap. Hence, the principal objective of this research is to tune the electronic and magnetic properties of silicene related nanomaterials through first-principles models.

I first explored the impact of edge functionalization and doping on the stabilities, electronic, and magnetic properties of silicene nanoribbons (SiNRs) and …

Inquiry Of Graphene Electronic Fabrication, John Rausch Greene

Master's Theses

Graphene electronics represent a developing field where many material properties and devices characteristics are still unknown. Researching several possible fabrication processes creates a fabrication process using resources found at Cal Poly a local industry sponsor. The project attempts to produce a graphene network in the shape of a fractal Sierpinski carpet. The fractal geometry proves that PDMS microfluidic channels produce the fine feature dimensions desired during graphene oxide deposit. Thermal reduction then reduces the graphene oxide into a purified state of graphene. Issues arise during thermal reduction because of excessive oxygen content in the furnace. The excess oxygen results in …

Sonochemical Synthesis Of Zinc Oxide Nanostructures For Sensing And Energy Harvesting, Phani Kiran Vabbina

FIU Electronic Theses and Dissertations

Semiconductor nanostructures have attracted considerable research interest due to their unique physical and chemical properties at nanoscale which open new frontiers for applications in electronics and sensing. Zinc oxide nanostructures with a wide range of applications, especially in optoelectronic devices and bio sensing, have been the focus of research over the past few decades. However ZnO nanostructures have failed to penetrate the market as they were expected to, a few years ago. The two main reasons widely recognized as bottleneck for ZnO nanostructures are (1) Synthesis technique which is fast, economical, and environmentally benign which would allow the growth on …

Advanced Graphene Microelectronic Devices, Chowdhury G. Al-Amin

FIU Electronic Theses and Dissertations

The outstanding electrical and material properties of Graphene have made it a promising material for several fields of analog applications, though its zero bandgap precludes its application in digital and logic devices. With its remarkably high electron mobility at room temperature, Graphene also has strong potential for terahertz (THz) plasmonic devices. However there still are challenges to be solved to realize Graphene’s full potential for practical applications.

In this dissertation, we investigate solutions for some of these challenges. First, to reduce the access resistances which significantly reduces the radio frequency (RF) performance of Graphene field effect transistors (GFETs), a novel …

Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju

Birck and NCN Publications

Metal–semiconductor (M–S) junctions are important components in many semiconductor devices, and there is growing interest in realizing high quality M–S contacts that are optically transparent. In this paper, we present our investigations into the characteristics of M–S junction in a semiconducting ZnO nanowire that was directly grown on a multilayer graphene film (MGF). The synthesized nanowires were fabricated into two-terminal devices with MGF as one contact and Al as the other contact. By comparison with devices employing Al contacts at both ends, the nanowire resistivity and specific contact resistivity of the MGF–nanowire contact can be extracted. The extracted specific contact …

Direct Measurement Of Graphene Adhesion On Silicon Surface By Intercalation Of Nanoparticles, Zong Zong, Chia-Ling Chen, Mehmet R. Dokmeci, Kai-Tak Wan

Kai-tak Wan

We report a technique to characterize adhesion of monolayered/multilayered graphene sheets on silicon wafer. Nanoparticles trapped at graphene-silicon interface act as point wedges to support axisymmetric blisters. Local adhesion strength is found by measuring the particle height and blister radius using a scanning electron microscope. Adhesion energy of the typical graphene-silicon interface is measured to be 151±28 mJ/m2. The proposed method and our measurements provide insights in fabrication and reliability of microelectromechanical/nanoelectromechanical systems.

Direct Measurement Of Graphene Adhesion On Silicon Surface By Intercalation Of Nanoparticles, Zong Zong, Chia-Ling Chen, Mehmet Dokmeci, Kai-Tak Wan

Mehmet R. Dokmeci

We report a technique to characterize adhesion of monolayered/multilayered graphene sheets on silicon wafer. Nanoparticles trapped at graphene-silicon interface act as point wedges to support axisymmetric blisters. Local adhesion strength is found by measuring the particle height and blister radius using a scanning electron microscope. Adhesion energy of the typical graphene-silicon interface is measured to be 151±28 mJ/m2. The proposed method and our measurements provide insights in fabrication and reliability of microelectromechanical/nanoelectromechanical systems.

Growth And Characterization Of Silicon Carbide Thin Films Using A Nontraditional Hollow Cathode Sputtering Technique, James Huguenin-Love

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC.

Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed …