Electronic Devices and Semiconductor Manufacturing Commons^™

Development And Processing Of Shape Memory Polymer Composites (Smpcs) For Application In Structural Robotics And Robotic Sensors., Kavish Sudan

Electronic Theses and Dissertations

Shape Memory Polymers (SMPs) have attracted significant attention since their introduction in the 1980s due to their remarkable ability to regain their original shape from a temporarily deformed state when exposed to an external stimulus, typically heat. This shape memory effect, driven by thermal transitions such as the glass transition temperature (T_g) or melting temperature (T_m), has made SMPs highly attractive for applications in soft robotics, aerospace, and biomedical devices. However, SMPs face challenges such as limited mechanical strength, thermal stability, and electrical conductivity, which hinder their broader adoption in advanced applications. To address these challenges, …

Cleaning And Characterization Of Chemical Vapor Deposited Graphene For Nanoelectronic Device Development, Sakib Ishraq

Graduate Theses, Dissertations, and Problem Reports (ETD)

Nanoelectronic devices based on graphene are a promising technology that combines the sensitivity and specificity of ion and element recognition with the accuracy and precision of electronics. The detection principle is based on the interaction of the target molecules with the nanodevice surface, which generates a measurable electrical signal. In the current study, graphene and its derivatives, synthesis and fabrication of high quality, good uniformity, and low defects graphene have been investigated as they are critical for high-performance and highly sensitive devices. Among many synthesis methods, chemical vapor deposition (CVD), have been used that needs to be transferred from the …

Design Tunneling Transistor And Schottky Junction Solar Cell Using Van Der Waals Semiconductor Heterostructure, Md Azmot Ullah Khan

LSU Doctoral Dissertations

Transition metal di-chalcogenide (TMDC) materials, being semiconductor in nature, offer Two-dimensional (2D) materials such as graphene and molybdenum disulfide (MoS₂) possess unique and unusual properties that are particularly applicable to nanoelectronics and photovoltaic devices. In this dissertation, four different projects have been done that encompass the implementation of these materials to improve the performance of future transistors and Schottky junction solar cells. In chapter 2, an analytical current transport model of a dual gate tunnel field-effect transistor (TFET) is developed by utilizing the principle of band-to-band tunneling (BTBT) and MoS₂ as the channel material. Later, using this …

Doping Graphene With Substitutional Mn, Pin-Cheng Lin, Renan Villarreal, Simona Achilli, Harsh Bana, Maya N. Nair, Antonio Tejeda, Ken Verguts, Stefan De Gendt, Manuel Auge, Hans Hofsäss, Steven De Feyter, Giovanni Di Santo, Luca Petaccia, Steven Brems, Guido Fratesi, Lino M. C. Pereira

Advanced Science Research Center

We report the incorporation of substitutional Mn atoms in high-quality, epitaxial graphene on Cu(111), using ultralow-energy ion implantation. We characterize in detail the atomic structure of substitutional Mn in a single carbon vacancy and quantify its concentration. In particular, we are able to determine the position of substitutional Mn atoms with respect to the Moiré superstructure (i.e., local graphene-Cu stacking symmetry) and to the carbon sublattice; in the out-of-plane direction, substitutional Mn atoms are found to be slightly displaced toward the Cu surface, that is, effectively underneath the graphene layer. Regarding electronic properties, we show that graphene doped with substitutional …

Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves

Graduate Theses, Dissertations, and Problem Reports (ETD)

Having been theorized in 1947, it was not until 2004 that graphene was first isolated. In the years since its isolation, graphene has been the subject of intense, world-wide study due to its incredibly diverse array of useful properties. Even though many billions of dollars have been spent on its development, graphene has yet to break out of the laboratory and penetrate mainstream industrial applications markets. This is because graphene faces a ‘grand challenge.’ Simply put, there is currently no method of manufacturing high-quality graphene on the industrial scale. This grand challenge looms particularly large for electronic applications where the …

Modeling Of Thermally Aware Carbon Nanotube And Graphene Based Post Cmos Vlsi Interconnect, K M Mohsin

LSU Doctoral Dissertations

This work studies various emerging reduced dimensional materials for very large-scale integration (VLSI) interconnects. The prime motivation of this work is to find an alternative to the existing Cu-based interconnect for post-CMOS technology nodes with an emphasis on thermal stability. Starting from the material modeling, this work includes material characterization, exploration of electronic properties, vibrational properties and to analyze performance as a VLSI interconnect. Using state of the art density functional theories (DFT) one-dimensional and two-dimensional materials were designed for exploring their electronic structures, transport properties and their circuit behaviors. Primarily carbon nanotube (CNT), graphene and graphene/copper based interconnects were …

Inquiry Of Graphene Electronic Fabrication, John Rausch Greene

Master's Theses

Graphene electronics represent a developing field where many material properties and devices characteristics are still unknown. Researching several possible fabrication processes creates a fabrication process using resources found at Cal Poly a local industry sponsor. The project attempts to produce a graphene network in the shape of a fractal Sierpinski carpet. The fractal geometry proves that PDMS microfluidic channels produce the fine feature dimensions desired during graphene oxide deposit. Thermal reduction then reduces the graphene oxide into a purified state of graphene. Issues arise during thermal reduction because of excessive oxygen content in the furnace. The excess oxygen results in …

Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju

Birck and NCN Publications

Metal–semiconductor (M–S) junctions are important components in many semiconductor devices, and there is growing interest in realizing high quality M–S contacts that are optically transparent. In this paper, we present our investigations into the characteristics of M–S junction in a semiconducting ZnO nanowire that was directly grown on a multilayer graphene film (MGF). The synthesized nanowires were fabricated into two-terminal devices with MGF as one contact and Al as the other contact. By comparison with devices employing Al contacts at both ends, the nanowire resistivity and specific contact resistivity of the MGF–nanowire contact can be extracted. The extracted specific contact …

Growth And Characterization Of Silicon Carbide Thin Films Using A Nontraditional Hollow Cathode Sputtering Technique, James Huguenin-Love

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC.

Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed …