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Electronic Devices and Semiconductor Manufacturing Commons™
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Articles 1 - 6 of 6
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Application Of Matlab Simulation For Quantum Wells And Absorption Modelling, Mohamed Nur
Application Of Matlab Simulation For Quantum Wells And Absorption Modelling, Mohamed Nur
Electrical Engineering Theses
The Quantum-Well User Entered Simulation Tool (QUEST), originally developed at the University of Texas at Arlington in 2005, is a simulation program built in MATLAB for computing energy eigenvalues and wavefunctions in user-defined semiconductor quantum well structures. This thesis presents a new revision and extension of QUEST with three primary contributions: compatibility updates to the existing MATLAB codebase, intersubband absorption modelling, and a redesigned graphical user interface for ease-of-use in testing.
The modernization effort for this program addresses incompatibilities introduced by changes to the MATLAB runtime environment since QUEST’s original release in 2005, including corrections to the self-consistent Schrödinger-Poisson solver …
Comparative Analysis Of Ev-Charging Converters Using Silicon Carbide Mosfets And Silicon Igbt’S, Muhammad A. Kahn
Comparative Analysis Of Ev-Charging Converters Using Silicon Carbide Mosfets And Silicon Igbt’S, Muhammad A. Kahn
Electrical Engineering Theses
The rapid expansion of electric vehicle (EV) charging infrastructure has increased the demand for efficient and reliable power electronic converters. Semiconductor device selection is critical to system performance, influencing efficiency, power density, and reliability. This thesis presents a comparative analysis of Silicon (Si) Insulated Gate Bipolar Transistors (IGBTs) and Silicon Carbide (SiC) MOSFETs in a representative EV charging converter, with emphasis on electrical performance and thermal behavior under identical operating conditions.
The research employs PLECS (Plexim) and electro-thermal simulation models to accurately characterize device and system interactions. The converter configuration consists of a grid-connected voltage source inverter (VSI) that maintains …
Photonic Crystal Devices For Chip Scale Sensing Systems, Yudong Chen
Photonic Crystal Devices For Chip Scale Sensing Systems, Yudong Chen
Electrical Engineering Dissertations - Archive
This thesis investigates the design and integration of photonic crystal (PC) structures for compact, high-performance optical platforms, with a focus on applications in gas sensing, on-chip lasers, and flat optics. Chapter 1 introduces the fundamental principles of PC design and simulation, highlighting their potential to replace bulky components in micro-gas chromatography (µGC) systems through miniaturization and integration. Chapter 2 explores PC-based nanobeam lasers, including the Lambda-Scale Embedded Active-Region Photonic Crystal (LEAP) laser, which demonstrates strong optical confinement and energy-efficient operation, with energy consumption as low as 8 fJ/bit. These laser designs are evaluated for their suitability in low-power, high-speed on-chip …
Enhancing Electromigration Reliability In Solder Interconnects Through Microstructure Control And Thermomechanical Failure Mechanisms In Thin Metal Lines Under Surge Current Conditions, Hariram Mohanram
Material Science and Engineering Dissertations - Archive
The relentless miniaturization of semiconductor devices has intensified reliability challenges in electronic packaging, particularly for solder interconnects and thin metal lines. This dissertation investigates two critical failure mechanisms—electromigration (EM) and thermomechanical fatigue (TMF)—and explores strategies to mitigate these effects. Electromigration, driven by high-density current-induced atomic migration, significantly impacts solder interconnects. This study examines the role of Under-Bump Metallization (UBM) and solder microstructure in improving EM reliability. Findings reveal that thicker UBMs delay void nucleation and enhance EM resistance, while the absence of UBM leads to failure through vertical void propagation. Additionally, grain orientation, particularly the c-axis alignment in Sn grains, …
Analysis Of Noise Sources In Avalanche Region Of Reverse Biased P-N Junctions, Md Sakiul Islam Sudman
Analysis Of Noise Sources In Avalanche Region Of Reverse Biased P-N Junctions, Md Sakiul Islam Sudman
Electrical Engineering Theses - Archive
There is a need to understand the physical mechanisms for excess noise factor (F) in avalanche diodes for all regions of operation. The current classical theory accounts for F only for low carrier multiplication where single carrier injection starts the avalanche process. Our model fits the white noise exhibited by reverse-biased avalanche diodes in the entire operation region of four orders of current magnitude. In this sense, it is a first. The measured noise data was provided by Texas Instruments. We fitted the measured noise components with the calculated noise components where carrier multiplication takes place. The least …
Semiconductor Photonic Crystal Surface Emitting Lasers For High Power, High Brightness And High Speed Applications, Chhabindra Gautam
Semiconductor Photonic Crystal Surface Emitting Lasers For High Power, High Brightness And High Speed Applications, Chhabindra Gautam
Electrical Engineering Dissertations - Archive
Photonic Crystal Surface Emitting Laser (PCSEL) is the promising third generation semiconductor laser technology as it addresses the challenges of the conventional semiconductor lasers (EEL/VCSEL) by providing single mode high power output with good beam quality (thus high brightness). The large area in plane coupling resulting from the multiple Bragg’s diffraction conditions in the periodic 2D photonic crystal cavities in the lasing cladding region leads to single mode operation over very large area. By model design engineering, such in plane lasing cavity can leak the light out of the plane, which result in surface emission. The ability to scale the …