Electronic Devices and Semiconductor Manufacturing Commons^™

Adaptive Control Of A Projectile Fin Using Piezoelectric Elastic Beam, Smitha Mani, Sahjendra N. Singh, Surya Kiran Parimi, Woosoon Yim, Mohamed B. Trabia

Mechanical Engineering Faculty Research

No abstract provided.

Monte Carlo Simulation Analysis Of Electron Bombardment Of Gallium Nitride For Particle Detector Applications, James Gibson Bolitho

Electrical & Computer Engineering Theses & Dissertations

Gallium Nitride (GaN) is a relatively new and promising semiconductor material. It is finding its place in commercial applications such as transistors, light-emitting diodes, and in blue lasers. The large bandgap of GaN allows for very low canier densities and high breakdown voltages. This combination results in a greatly reduced background current and noise, and can withstand large applied voltages. In addition, GaN is sturdy and has strong mechanical properties. These are all ideal characteristics for application in high-energy particle detection.

In this thesis, the central goal is to assess the response of a GaN-based particle detector through numerical modeling. …

High-Temperature Ferromagnetism In Transition Metal Implanted Wide-Bandgap Semiconductors, Jeremy A. Raley

Theses and Dissertations

Material with both semiconductor and magnetic properties, which is commonly called a dilute magnetic semiconductor (DMS), will prove most useful in the fabrication of spintronic devices. In order to produce a DMS at above room temperature, transition metals (TMs) were implanted into host semiconductors of p-GaN, Al_0.35Ga_0.65N, or ZnO. Magnetic hysteresis measurements using a superconducting quantum interference device (SQUID) magnetometer show that some of the material combinations clearly exhibit ferromagnetism above room temperature. The most promising materials for creating spintronic devices using ion implantation are p-GaN:Mn, Al_0.35Ga_0.65N:Cr, and Fe-implanted ZnO nanotips on …

Using Multiple Mems Imus To Form A Distributed Inertial Measurement Unit, Ryan D. Hanson

Theses and Dissertations

MEMS IMUs are readily available in quantity and have extraordinary advantages over conventional IMUs in size, weight, cost, and power consumption. However, the poor performance of MEMS IMUs limits their use in more demanding military applications. It is desired to use multiple distributed MEMS IMUs to simulate the performance of a single, more costly IMU, using the theory behind Gyro-Free IMUs. A Gyro-Free IMU (GF-IMU) uses a configuration of accelerometers only to measure the three accelerations and three angular rotations of a rigid body in 3-D space. Theoretically, almost any configuration of six distributed accelerometers yields sufficient measurements to solve …

Acceleration Management: The Semiconductor Industry Confronts The 21st Century, Melissa M. Appleyard, C. N. Berglund, Craig Peterson, Richard W. Smith

Business Faculty Publications and Presentations

In the recent generations of semiconductor devices, the semiconductor industry has been accelerating towards the limits of the physical sciences. As a consequence, technology managers in that industry face seven major challenges, which will threaten progress: process, complexity, performance, power, density, productivity, and quality / reliability. We believe that confronting these challenges requires a new approach to technology management both within organizations and between organizations that form the backbone of the industry. We call this new approach Acceleration Management. Acceleration Management first requires that firms cultivate deep technical knowledge and inspire creative solutions to seemingly insoluble technical problems. The second …

Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]