Open Access. Powered by Scholars. Published by Universities.®

2014

Discipline
Institution
Keyword
Publication
Publication Type

Articles 1 - 30 of 36

Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Indirect Matrix Converter As Standard Power Electronic Interface, Andrés Escobar-Mejía Dec 2014

Indirect Matrix Converter As Standard Power Electronic Interface, Andrés Escobar-Mejía

Graduate Theses and Dissertations

The increase in the penetration levels of distributed generation in the modern power grid and its importance in future energy systems have accelerated the interest of developing new power electronic interfaces for the energy conversion process. The feasibility of applying the indirect matrix converter as the standard power electronic interface for applications with power ratings from several kW to few MW is addressed in this dissertation. Special attention is given to those applications where space dominates the power electronic requirements. The main motivation for using the indirect matrix converter is that eliminates the energy storage component in the way of …


Development Of Micro-Hall Devices For Current Sensing, Thomas White Dec 2014

Development Of Micro-Hall Devices For Current Sensing, Thomas White

Graduate Theses and Dissertations

In this work, micro-Hall devices were developed for the purpose of sensing current within a high temperature and high power environment. GaAs HEMT, InGaAs pHEMT, and GaN HEMT structures were studied. These structures were grown by molecular beam epitaxy. Processing techniques including photolithography, metallization, Si deposition, wet etching, and dry etching were studied. Electrical characterization measurements including low frequency noise, Hall effect, sensitivity, capacitance-voltage, and current-voltage were performed.

Electron mobility and sheet carrier density studies were performed for both the InGaAs pHEMT and GaAs HEMT structures. Results indicated the InGaAs pHEMT was superior and thus fabricated as the micro-Hall device. …


Buck Converter, Bowen Liu Dec 2014

Buck Converter, Bowen Liu

Electrical Engineering

The recent sustainable energy growth triggered a huge power electronics demand, specifically related to power conversion. My senior project is a design of a buck converter which steps down the voltage from photovoltaic cells ranging from 5 to 40V to a rechargeable battery with 5V. This converter has a high enough power efficiency to effectively convert the energy harnessed from PV panels.


Energy Harvesting From Exercise Machines: Lt8705 Dc-Dc Conversion For Elliptical Trainers, Braden Burk, Raj Bhula, Nathan Mckay Dec 2014

Energy Harvesting From Exercise Machines: Lt8705 Dc-Dc Conversion For Elliptical Trainers, Braden Burk, Raj Bhula, Nathan Mckay

Electrical Engineering

Cal Poly’s Energy Harvesting from Exercise Machines (EHFEM) program aims to power the grid using human energy harvested from exercise machines in its gym. Doing so could save the school money and increase the total supply of power available on the grid. This document belongs to one of many groups attempting to design a suitable DC-DC conversion system for an elliptical trainer using an LT8705 Four-Switch Buck-Boost converter. Past teams have built other converters and developed system compatibility characteristics such as filtering, safety, and stability for interfacing components. These teams fall into one of two departments in EHFEM: DC-DC Conversion …


Gesn Devices For Short-Wave Infrared Optoelectronics, Benjamin Ryan Conley Dec 2014

Gesn Devices For Short-Wave Infrared Optoelectronics, Benjamin Ryan Conley

Graduate Theses and Dissertations

The electronics industry has a large silicon infrastructure for the manufacture of complementary-metal oxide semiconductor (CMOS) based electronics. The increasing density of Si based circuits has set a pace that is now pushing the physical limits of connectivity between devices over conventional wire based links. This has driven the increasing interest in Si based optoelectronics and to use the groundwork already established by the electronics industry for lower cost optical communications. The greatest limitation to this effort has been the incorporation of a Si based laser, which requires integration of a direct bandgap material within this CMOS process.

The Ge1-xSnx …


Design Of A High Performance Silicon Carbide Cmos Operational Amplifier, Shaila Amin Bhuyan Dec 2014

Design Of A High Performance Silicon Carbide Cmos Operational Amplifier, Shaila Amin Bhuyan

Graduate Theses and Dissertations

This thesis presents the design, simulation, layout and test results of a silicon carbide (SiC) CMOS two-stage operational amplifier (op amp) with NMOS input stage. The circuit has been designed to provide a stable open-loop voltage gain (60 dB), unity-gain bandwidth (around 5 MHz) and maintain a high CMRR and PSRR within a useful input common mode range over process corners and a wide temperature range (25 °C - 300 °C). Between the two stages a Miller compensation topology is placed to improve the phase margin (around 45°). Due to the comparatively high threshold voltage values of transistors in SiC, …


Design, Simulation And Implementation Of Three-Phase Bidirectional Dc-Dc Dual Active Bridge Converter Using Sic Mosfets, Tariq Aldawsari Dec 2014

Design, Simulation And Implementation Of Three-Phase Bidirectional Dc-Dc Dual Active Bridge Converter Using Sic Mosfets, Tariq Aldawsari

Graduate Theses and Dissertations

The use of SiC-based martials in fabricating power semiconductor devices has shown more interest than conventional silicon-based. Its promising abilities to improve the performance of power electronic systems made it a valuable choice in building high power DC-DC converters. This thesis presents the design and implementation of a three-phase bidirectional DC-DC Dual Active Bridge using SiC MOSFETs. The proposed circuit is first built in Matlab for simulation analysis. Then a phase shift modulation controller is designed in Simulink to test the simulation circuit. The controls are then integrated through an FPGA to test the prototype. Simulations and experimental results are …


Control Of A Fuel Cell Based Autonomous Electric Power System For An Aerospace Vehicle, Roshini S. Ashok Oct 2014

Control Of A Fuel Cell Based Autonomous Electric Power System For An Aerospace Vehicle, Roshini S. Ashok

Von Braun Symposium Student Posters

No abstract provided.


Hybrid Silicon Mode-Locked Laser With Improved Rf Power By Impedance Matching, Bassem M. Tossoun Sep 2014

Hybrid Silicon Mode-Locked Laser With Improved Rf Power By Impedance Matching, Bassem M. Tossoun

Master's Theses

The mode-locked laser diode (MLLD) finds a lot of use in applications such as ultra high-speed data processing and sampling, large-capacity optical fiber communications based on optical time-division multiplexing (OTDM) systems. Integrating mode-locked lasers on silicon makes way for highly integrated silicon based photonic communication devices. The mode-locked laser being used in this thesis was built with Hybrid Silicon technology. This technology, developed by UC Santa Barbara in 2006, introduced the idea of wafer bonding a crystalline III- V layer to a Silicon-on-insulator (SOI) substrate, making integrated lasers in silicon chips possible.

Furthermore, all mode-locked lasers produce phase noise, which …


Health Risks Caused By Wireless Technologies, Durreeshahwar Zafarahmed, Qurrat-Ul-Ain Zafarahmed Aug 2014

Health Risks Caused By Wireless Technologies, Durreeshahwar Zafarahmed, Qurrat-Ul-Ain Zafarahmed

Journal of Undergraduate Research at Minnesota State University, Mankato

There are many health issues related to the use of cellular phones, wireless local area networks, and other devices that emit electromagnetic radiation (EMR). Some of these systems have become a part of our daily lives and many of us are in direct or indirect contact for extended period of times with these devices. However, the general public is unaware of the health risks associated with the use of these devices. Our research covers studies done by individuals as well as organizations on the harmful effects on the health of people from these devices and their claims. We also present …


Polymer-Based Thermoelectric Devices, Stuart W. Hilsmier, Edward P. Tomlinson, Bryan Boudouris Aug 2014

Polymer-Based Thermoelectric Devices, Stuart W. Hilsmier, Edward P. Tomlinson, Bryan Boudouris

The Summer Undergraduate Research Fellowship (SURF) Symposium

Currently, over 50% of all energy generated in the US is lost as waste heat, and thermoelectric generators offer a promising means to recoup some of this energy, if their efficiency is improved. While organic thermoelectric materials lack the efficiency of their inorganic counterparts, they are composed of highly abundant resources and have low temperature processing conditions. Recently, a new class of redox-active polymers, radical polymers, has exhibited high electrical conductivity in an entirely amorphous medium. In addition, these radical polymers have a simple synthetic scheme and can be highly tunable to provide desired electrical properties. In this study, the …


Developing Compact Models For Passive Devices On Ibm 45nm Cmos Soi Technology, Yufei Feng, Yanfei Shen, Saeed Mohammadi Aug 2014

Developing Compact Models For Passive Devices On Ibm 45nm Cmos Soi Technology, Yufei Feng, Yanfei Shen, Saeed Mohammadi

The Summer Undergraduate Research Fellowship (SURF) Symposium

The standard IBM 45 nm technology is widely adopted for industrial and academic purpose by integrates circuit designers. Original models provided by foundry are not accurate, which might cause inaccuracy in circuit simulations. Equivalent circuit models, using RLC elements to simulate electrical component, will effectively deliver their electrical performance. This study consists of four steps to construct these models. First, Cadence Virtuoso, the commercial circuit design software was used to run simulations and extract data for different device parameters. Second, analyzing tools, like Microsoft Excel or Matlab, are used to analyze the extracted data. Then, equations are written for each …


Characterization And Testing Of A 5.8 Kv Sic Pin Diode For Electric Space Propulsion Applications, Alexandra Toftul Aug 2014

Characterization And Testing Of A 5.8 Kv Sic Pin Diode For Electric Space Propulsion Applications, Alexandra Toftul

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Inductive Pulsed Plasma Thrusters (IPPTs) are a type of in-space propulsion that has multiple advantages over conventional chemical propulsion for long-duration, deep space missions. Existing IPPT prototypes utilize spark gap switches, however these are subject to corrosion problems that make them unreliable for long-term use. Recent advances in solid state switching technology have opened up a variety of switching options that could provide greater reliability, controllability, and increased energy efficiency. Taking advantage of this, a novel thruster drive circuit topology containing a high-power silicon controlled rectifier (SCR) and series fast recovery diode (FRD) is proposed that is expected to increase …


Analysis Of The Detection Of Organophosphate Pesticides In Aqueous Solutions Using Polymer-Coated Single Idt Sensors, Michael J. Mccarthy Jul 2014

Analysis Of The Detection Of Organophosphate Pesticides In Aqueous Solutions Using Polymer-Coated Single Idt Sensors, Michael J. Mccarthy

Master's Theses (2009 -)

The single interdigital transducer (IDT) device was investigated as a micro-chemical sensor for the detection of organophosphates compounds in aqueous solutions. The compounds of interest are: parathion, parathion-methyl, and paraoxon. The polymers used as a partially-selective coating for the direct detection of these compounds are 2,2'-diallylbisphenol A- 1,1,3,3,5,5-hexamethyltrisiloxane (BPA-HMTS) and polyepichlorohydrin (PECH). BPA-HMTS is synthesized here at Marquette University. The measurement of interest for the single IDT is the change radiation resistance. The radiation resistance represents the energy stored in the propagating acoustic wave. As analyte absorbs into the polymer coating, changes in the film's properties will undergo resulting in …


Ultraviolet Led Biofouling Mitigation, Andrew Lam Jun 2014

Ultraviolet Led Biofouling Mitigation, Andrew Lam

Computer Engineering

The goal is to determine if low-cost UV LEDs can mitigate marine biofouling on small glass or acrylic camera lenses. A microprocessor-controlled experimental setup to control the illumination of low-cost UV LEDs of various wavelength and packaging was fashioned. The system consists of a programmed microcontroller, a manufactured LED breakout interface, and a submergible UV LED array enclosed in a borosilicate glass tube. A preliminary qualitative assessment of four different UV LEDs was conducted during a three-week deployment of the experimental setup in the raw seawater system at the Cal Poly Center for Costal and Marine Sciences in Avila Beach, …


Rapid Battery Exchange Safety And Sensing, Ben John Froelich, Isaac Sungjin Kim Jun 2014

Rapid Battery Exchange Safety And Sensing, Ben John Froelich, Isaac Sungjin Kim

Electrical Engineering

The Rapid Battery Exchange system (RBX) swaps batteries in an electric van, allowing almost continuous operation of the vehicle. The RBX system is designed and built by The Cal Poly Electric Vehicle Engineering Club (EVEC). The system includes the exchange ramp, two battery packs, and the electric “G-Van.” While the vehicle drives using one of the battery packs, the other pack charges in the exchange ramp. When the van’s battery depletes, it drives onto the ramp and swaps the dead battery for the charged one, and the process repeats.

The RBX battery pack safety and sensing project divides into two …


Low Voltage Cmos Sar Adc Design, Ryan Hunt Jun 2014

Low Voltage Cmos Sar Adc Design, Ryan Hunt

Electrical Engineering

This project centers on the design of a single ended 10-bit successive approximation register analog to digital converter (SAR ADC for short) that easily interfaces to a micro-controller, such as an Arduino. With micro-controller interfacing in mind, the universal data transfer technique of SPI proved an easy way to communicate between the ADC and the micro-controller. The ADC has a range of 1V (highest code value) to 0V (lowest code value) and operates from a single voltage rail value of 1.8V. Typical SPI clock speeds run on the order of 2MHz and with a 10-bit ADC this means a sampling …


Mos Current Mode Logic (Mcml) Analysis For Quiet Digital Circuitry And Creation Of A Standard Cell Library For Reducing The Development Time Of Mixed Signal Chips, David Marusiak Jun 2014

Mos Current Mode Logic (Mcml) Analysis For Quiet Digital Circuitry And Creation Of A Standard Cell Library For Reducing The Development Time Of Mixed Signal Chips, David Marusiak

Master's Theses

Many modern digital systems use forms of CMOS logical implementation due to the straight forward design nature of CMOS logic and minimal device area since CMOS uses fewer transistors than other logic families. To achieve high-performance requirements in mixed-signal chip development and quiet, noiseless circuitry, this thesis provides an alternative toCMOSin the form of MOS Current Mode Logic (MCML). MCML dissipates constant current and does not produce noise during value changing in a circuit CMOS circuits do. CMOS logical networks switch during clock ticks and with every device switching, noise is created on the supply and ground to deal with …


Synthesis And Characterization Of Nanocrystals And Their Application For Photodetectors, Ahmad Nusir May 2014

Synthesis And Characterization Of Nanocrystals And Their Application For Photodetectors, Ahmad Nusir

Graduate Theses and Dissertations

Room temperature operation is considered one of the essential restrictions in the design of electronic devices. Photodetectors are unable to detect light efficiently at room temperature due to high dark currents. Semiconductor nanocrystals possess unique optical and electrical properties which make them ideal for fabricating uncooled photodetectors. In this project, nanocrystals were synthesized and implemented in devices that detect light at room temperature.

Nanocrystalline I-III-VI2 and II-VI semiconductors (CuInS2 and CdSe) were grown by a wet chemical method, and characterized using: optical absorption, photoluminescence, Raman scattering, and x-ray diffraction. The optical absorption and photoluminescence spectra of the nanocrystals were recorded …


High Temperature Ltcc Based Sic Double-Sided Cooling Power Electronic Module, Hao Zhang May 2014

High Temperature Ltcc Based Sic Double-Sided Cooling Power Electronic Module, Hao Zhang

Graduate Theses and Dissertations

This objective of this dissertation research is to investigate a module packaging technology for high temperature double-sided cooling power electronic module application. A high-temperature wire-bondless low-temperature co-fired ceramic (LTCC) based double-sided cooling power electronic module was designed, simulated and fabricated. In this module, the conventional copper base plate is removed to reduce the thermal resistance between the device junctions to the heat sink and to improve the reliability of the module by eliminating the large area solder joint between the power substrate and the copper base plate. A low-temperature co-fired ceramic (LTCC) substrate with cavities and vias is used as …


Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, And Testing, Mahesh Satyanarayana Ailavajhala May 2014

Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, And Testing, Mahesh Satyanarayana Ailavajhala

Boise State University Theses and Dissertations

For decades, various radiation-detecting materials have been extensively researched, to find a better material or mechanism. Recently, there has been a growing need for smaller, and more effective materials or devices that are Integrated Circuits (IC) compatible, and can perform similar functions as bulkier Geiger counters, and other measurement options, which fail the requirement for easy, cheap, and accurate radiation dose measurements. Here arises the use of thin films of chalcogenide glasses, which have unique properties of high thermal stability along with high sensitivity towards short wavelength radiation.

In this work, the effect of γ-rays, generated from a 60Co …


Nano-Ionic Redox Resistive Ram – Device Performance Enhancement Through Materials Engineering, Characterization And Electrical Testing, Muhammad Rizwan Latif May 2014

Nano-Ionic Redox Resistive Ram – Device Performance Enhancement Through Materials Engineering, Characterization And Electrical Testing, Muhammad Rizwan Latif

Boise State University Theses and Dissertations

In recent years, Redox Conductive Bridge Memory (RCBM), which falls in the Resistive Random Access Memory (RRAM) category, has gained considerable attention as one of the promising candidates for future generation non-volatile memory due to its advantages over Flash memory as it offers high density, low operating power, fast read/write operation, and compatibility with conventional CMOS process. Currently research is being conducted to improve the reliability of the RCBM devices, which are comprised of an insulating material, also known as active layer, sandwiched between two metal electrodes. The main working mechanism of these devices is based on the resistance change …


A Reliability Prediction Method For Phase-Change Devices Using Optimized Pulse Conditions, Martin Jared Barclay May 2014

A Reliability Prediction Method For Phase-Change Devices Using Optimized Pulse Conditions, Martin Jared Barclay

Boise State University Theses and Dissertations

Owing to the outstanding device characteristics of Phase-Change Random Access Memory (PCRAM) such as high scalability, high speed, good cycling endurance, and compatibility with conventional complementary metal-oxide-semiconductor (CMOS) processes, PCRAM has reached the point of volume production. However, due to the temperature dependent nature of the phase-change memory device material and the high electrical and thermal stresses applied during the programming operation, the standard methods of high-temperature (Temperature > 125 °C) accelerated retention testing may not be able to accurately predict bit sensing failures or determine slight pulse condition changes needed if the device were to be …


Contact Resistance Evolution And Degradation Of Highly Cycled Micro-Contacts, Christopher L. Stilson Mar 2014

Contact Resistance Evolution And Degradation Of Highly Cycled Micro-Contacts, Christopher L. Stilson

Theses and Dissertations

Reliable microelectromechanical systems (MEMS) switches are critical for developing high performance radio frequency circuits like phase shifters. Engineers have attempted to improve reliability and lifecycle performance using novel contact metals, unique mechanical designs and packaging. Various test fixtures including: MEMS devices, atomic force microscopes (AFM) and nanoindentors have been used to collect resistance and contact force data. AFM and nanoindentor test fixtures allow direct contact force measurements but are severely limited by low resonance sensors, and therefore low data collection rates. This thesis reports the contact resistance evolution results and fabrication of thin film micro-contacts dynamically tested up to 3kHz. …


Investigation Of Degradation Effects Due To Gate Stress In Gan-On-Si High Electron Mobility Transistors Through Analysis Of Low Frequency Noise, Michael Curtis Meyer Masuda Mar 2014

Investigation Of Degradation Effects Due To Gate Stress In Gan-On-Si High Electron Mobility Transistors Through Analysis Of Low Frequency Noise, Michael Curtis Meyer Masuda

Master's Theses

Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike traditional semiconductor devices, the GaN HEMT channel region is undoped and relies on the piezoelectric effect created at the GaN and Aluminum Gallium Nitride (AlGaN) heterojunction to create a conduction channel in the form of a quantum well known as the two dimensional electron gas (2DEG). Because the GaN HEMTs are undoped, these devices have higher electron mobility crucial for …


Spectroscopy Studies Of Straincompensated Mid-Infrared Qcl Active Regions On Misoriented Substrates, Gregory Edward Triplett, Justin Grayer, Charles Meyer, Emily Cheng, Denzil Roberts Jan 2014

Spectroscopy Studies Of Straincompensated Mid-Infrared Qcl Active Regions On Misoriented Substrates, Gregory Edward Triplett, Justin Grayer, Charles Meyer, Emily Cheng, Denzil Roberts

Electrical and Computer Engineering Publications

In this work, we perform spectroscopic studies of AlGaAs/InGaAs quantum cascade laser structures that demonstrate frequency mixing using strain-compensated active regions. Using a three-quantum well design based on diagonal transitions, we incorporate strain in the active region using single and double well configurations on various surface planes (100) and (111). We observe the influence of piezoelectric properties in molecular beam epitaxy grown structures, where the addition of indium in the GaAs matrix increases the band bending in between injector regions and demonstrates a strong dependence on process conditions that include sample preparation, deposition rates, mole fraction, and enhanced surface diffusion …


Orientation-Dependent Pseudomorphic Growth Of Inas For Use In Lattice-Mismatched Mid-Infrared Photonic Structures, Gregory Edward Triplett, Charles Meyer, Emily Cheng Jan 2014

Orientation-Dependent Pseudomorphic Growth Of Inas For Use In Lattice-Mismatched Mid-Infrared Photonic Structures, Gregory Edward Triplett, Charles Meyer, Emily Cheng

Electrical and Computer Engineering Publications

In this study, InAs was deposited on GaAs (100) and GaAs (111)B 2 degrees towardssubstrates for the purpose of differentiating the InAs growth mode stemming from strain and then analyzed using in-situ reflection high energy electron diffraction, scanning electron microscopy, Raman spectroscopy, reflectance spectroscopy, and atomic force microscopy. The procession of InAs deposition throughout a range of deposition conditions results in assorted forms of strain relief revealing that, despite lattice mismatch for InAs on GaAs (approximately 7%), InAs does not necessarily result in typical quantum dot/wire formation on (111) surfaces, but instead proceeds two-dimensionally due primarily to the surface orientation.


Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li Jan 2014

Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li

Electrical & Computer Engineering Faculty Publications

Metal-Oxide-Semiconductor (MOS) capacitors with Bi2Te3 thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi2Te3 thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi2Te3, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent …


Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali Jan 2014

Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Ge quantum dot formation on Si(1 0 0)-(2 × 1) by nanosecond pulsed laser deposition under laser excitation was investigated. Scanning tunneling microscopy was used to probe the growth mode and morphology. Excitation was performed during deposition using laser energy density of 25-100 mJ/cm 2. Faceted islands were achieved at a substrate temperature of ∼250 °C only when using laser excitation. The island morphology changes with increased laser excitation energy density although the faceting of the individual islands remains the same. The size of the major length of islands increases with the excitation laser energy density. A purely electronic …


Enhancing The Insulation Of Wide-Range Spectrum In The Pva/N Thin Film By Doping Zno Nanowires, Yu-Chen Lin, Ching-Hsiang Vhen, Liang-Yih Chen, Shih-Chieh Hsu, Shizhi Qian Jan 2014

Enhancing The Insulation Of Wide-Range Spectrum In The Pva/N Thin Film By Doping Zno Nanowires, Yu-Chen Lin, Ching-Hsiang Vhen, Liang-Yih Chen, Shih-Chieh Hsu, Shizhi Qian

Mechanical & Aerospace Engineering Faculty Publications

In this study, polyvinyl alcohol/nitrogen (PVA/N) hybrid thin films doped with sharp-sword ZnO nanowires with insulating effect and wide-range spectrum are demonstrated for the first time. PVA/N doped ZnO nanocomposites were developed by blending PVA and N-doped ZnO nanowires in water at room temperature. Measurements from the field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Raman, and photoluminescence emission (PL) spectra of the products show that nitrogen is successfully doped into the ZnO wurtzite crystal lattice. In addition, the refractive index of PVA/N doped ZnO hybrid thin films can be controlled by varying the doped ZnO nanowires under different …