Electronic Devices and Semiconductor Manufacturing Commons^™

Development Of An Oxygen Saturation Monitoring System By Embedded Electronics, Manikandan Venkatesan Gomathy

Graduate Theses and Dissertations

Measuring Oxygenation of blood (SaO2) plays a vital role in patient’s health monitoring. This is often measured by pulse oximeter, which is standard measure during anesthesia, asthma, operative and post-operative recoveries. Despite all, monitoring Oxygen level is necessary for infants with respiratory problems, old people, and pregnant women and in other critical situations.

This paper discusses the process of calculating the level of oxygen in blood and heart-rate detection using a non-invasive photo plethysmography also called as pulsoximeter using the MSP430FG437 microcontroller (MCU). The probe uses infrared lights to measure and should be in physical contact with any peripheral points …

Modeling And Validation Of 4h-Sic Low Voltage Mosfets For Integrated Circuit Design, Shamim Ahmed

Graduate Theses and Dissertations

Silicon Carbide is a promising wide bandgap material and gradually becoming the first choice of semiconductor for high density and high efficiency power electronics in medium voltage range (500-1500V). SiC has also excellent thermal conductivity and the devices fabricated with the material can operate at high temperature (~ 400 ⁰C). Thus, a power electronic system built with SiC devices requires less cooling requirement and saves board space and cost. The high temperature applications of SiC material can also be extended to space exploration, oil and gas rigging, aerospace and geothermal energy systems for data acquisition, sensing and instrumentation and power …

Si-Based Germanium-Tin (Gesn) Emitters For Short-Wave Infrared Optoelectronics, Seyed Amir Ghetmiri

Graduate Theses and Dissertations

Conventional integrated electronics have reached a physical limit, and their efficiency has been influenced by the generated heat in the high-density electronic packages. Integrated photonic circuits based on the highly developed Si complementary-metal-oxide-semiconductor (CMOS) infrastructure was proposed as a viable solution; however, Si-based emitters are the most challenging component for the monolithic integrated photonic circuits. The indirect bandgap of silicon and germanium is a bottleneck for the further development of photonic and optoelectronic integrated circuits.

The Ge1-xSnx alloy, a group IV material system compatible with Si CMOS technology, was suggested as a desirable material that theoretically exhibits a direct bandgap …

Investigation Of The Optical Properties Of Pbse/Pbx Nanocrystals For Photodetector Applications, Haley Ann Morris

Graduate Theses and Dissertations

Lead selenide and lead selenide/lead sulfide core/shell nanocrystals were investigated for use in near infrared photodetectors. A colloidal synthesis method was used for both the core and core/shell configurations. The lead sulfide shell was examined in order to mitigate oxidation of the nanoparticle surface. Absorbance and photoluminescence spectra were measured at room temperature and 77 K, respectively. Transmission electron microscopy images were also obtained to confirm crystallography and size. Bulk lead selenide was simulated in WIEN2k utilizing the linear-augmented plane wave method of solving density functional theory to better understand the electronic structure of PbSe. The crystal structure, electron density, …

Design, Fabrication And Measurement Of A Plasmonic Enhanced Terahertz Photoconductive Antenna, Nathan Matthias Burford

Graduate Theses and Dissertations

Generation of broadband terahertz (THz) pulses from ultrafast photoconductive antennas (PCAs) is an attractive method for THz spectroscopy and imaging. This provides a wide frequency bandwidth (0.1-4 THz) as well as the straightforward recovery of both the magnitude and phase of the transmitted and/or reflected signals. The achieved output THz power is low, approximately a few microwatts. This is due to the poor conversion of the femtosecond laser used as the optical pump to useable current inside the antenna semiconducting material. The majority of THz power comes from the photocarriers generated within ~ 100 nm distance from the antenna electrodes. …

Growth Of Gesn And Gepb Alloy Films Using Thermal Evaporator, Hakimah Alahmed

Graduate Theses and Dissertations

Silicon is the most important semiconductor material used in microelectronic devices. As the number of transistors keep doubling every 24 months (Moore’s law), transistors continue scaling down in size, electrical interconnect is reaching its limits to keep up with the scaling down rate in integrated circuits. These limitations are related to interconnect density and power consumption. Hence, replacing electrical interconnect with optical interconnect on the chip or between chips has the ability to overcome these limitations. However, silicon has poor light emitting efficiency, and other substitutes such as III-V materials are not suitable due to high cost, lattice mismatch, and …

Compact Modeling Of Sic Insulated Gate Bipolar Transistors, Sonia Perez

Graduate Theses and Dissertations

This thesis presents a unified (n-channel and p-channel) silicon/silicon carbide Insulated Gate Bipolar Transistor (IGBT) compact model in both MAST and Verilog-A formats. Initially, the existing MAST model mobility equations were updated using recently referenced silicon carbide (SiC) data. The updated MAST model was then verified for each device tested. Specifically, the updated MAST model was verified for the following IGBT devices and operation temperatures: n-channel silicon at 25 ˚C and at 125 ˚C; n-channel SiC at 25 ˚C and at 175 ˚C; and p-channel SiC at 150 ˚C and at 250 ˚C. Verification was performed through capacitance, DC output …

Modeling And Simulation Of 1700 V 8 A Genesic Superjunction Transistor, Staci E. Brooks

Graduate Theses and Dissertations

The first-ever 1.7kV 8A SiC physics-based compact SPICE model is developed for behavior prediction, modeling and simulation of the GeneSiC “Super” Junction Transistor. The model implements Gummel-Poon based equations and adds a quasi-saturation collector series resistance representation from a 1.2 kV, 6 A SiC bipolar junction transistor model developed in Hangzhou, China. The model has been validated with the GA08JT17-247 device data representing both static and dynamic characteristics from GeneSiC. Parameter extraction was performed in IC-CAP and results include plots showing output characteristics, capacitance versus voltage (C-V), and switching characteristics for 25 °C, 125 °C, and 175 °C temperatures.

Design, Fabrication, And Measurement Of A Multiple-Input Multiple-Output (Mimo) Antenna For Mobile Communication, Christopher Charles Arnold

Graduate Theses and Dissertations

This thesis presents the design, fabrication and characterization of a multiband uniplanar MIMO antenna for hand-held mobile communication devices on LTE, WLAN, and WMAN networks. The antenna design methodology combined a variety of broadbanding techniques that resulted in a single-layer hybrid monopole antenna coupled to a meander line element and parasitic structures. The 115×55×1.54 mm antenna was fabricated using an FR4 composite material and occupies only a fractional volume within the size of an average cellular phone allowing ample space to integrate with existing hardware. Characterization of the MIMO antenna included input impedance, scattering parameters and radiation pattern cross sections …

Single-Walled Carbon Nanotube Arrays For High Frequency Applications, Asmaa Elkadi

Graduate Theses and Dissertations

This dissertation presents a thorough analysis of semiconducting Single-Walled Carbon Nanotube-based devices, followed by a test structure fabrication and measurements.

The analysis starts by developing an individual nanotube model, which is then generalized for many nanotubes and adding the parasitic elements. The parasitic elements appear when forming the device electrodes degrade the overall performance.

The continuum model of an individual nanotube is developed. A unique potential function is presented to effectively describe the electron distribution in the carbon nanotube subsequently facilitating solving Schrödinger's equation to obtain the energy levels, and to generalize the model for many nanotubes.

It is shown …

Hand Pattern Recognition Using Smart Band, Theerth Raj Munusamy

Graduate Theses and Dissertations

The Importance of gesture recognition has widely spread around the world. Many research strategies have been proposed to study and recognize gestures, especially facial and hand gestures. Distinguishing and recognizing hand gestures is vital in hotspot fields such as bionic parts, powered exoskeleton, diagnosing muscle disorders, etc. Recognizing such gesture patterns can also create a stress-free and fancy user interface for mobile phones, gaming consoles and other such devices.

The objective is to design a simple yet efficient wearable hand gesture recognizing system. This thesis also shows that by taking both EMG and accelerometer data into account, can improve the …

Characterization Of Silicon Phosphorus Alloy For Device Applications, Larry C. Cousar

Graduate Theses and Dissertations

A new material of highly-phosphorus doped silicon for device applications was characterized and analyzed for new material properties. Devices such as NMOS transistors and other CMOS compatible devices may benefit from new materials that reduce external resistances and increase drive currents.

Material characterization requires numerous techniques and technologies to determine electrical, optical, and physical characteristics. For this work, Hall measurement, X-ray Diffraction, Raman Spectroscopy, Photoluminescence Characterization, and Spectroscopic Ellipsometry were used to better understand this new material. The results may lead to new models for silicon phosphorus alloys.

Design, Fabrication And Characterization Of Plasmonic Fishnet Structures For The Enhancement Of Absorption In Thin Film Solar Cells, Sayan Seal

Graduate Theses and Dissertations

Incorporating plasmonic structures into the back spacer layer of thin film solar cells (TFSCs) is an efficient way to improve their performance. The fishnet structure; which is a tunable, plasmonic light scatterer is used to enhance light absorption. Unlike other plasmonic particles that have been previously suggested, the fishnet is an electrically connected wire mesh and does not result in electric field localization, hence it results in greater absorption in the intrinsic Si layer. Unlike other designs, the fishnet structure is placed in the back spacer layer of the TFSC, so it does not block any incident light. There is …

Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan

Graduate Theses and Dissertations

This research work, for the first time, investigated metal semiconductor-metal (MSM) zine oxide (ZnO) nanorod based ultra-violet (UV) detectors having a Wheatstone bridge design with a high

responsivity at room temperature and above, as well as a responsivity that was largely independent of the change in ambient conditions. The ZnO nanorods which acted as the sensing element of the detector were grown by a chemical growth technique. Studies were conducted to determine the effects on ZnO nanorod properties by varying the concentration of the chemicals used for the rod growth. These studies showed how the rod diameter and the deposition …

Investigation Of The Effects Of Rapid Thermal Annealing On Mbe Grown Gaasbi/Gaas Heterostructures For Optoelectronic Devices, Perry C. Grant

Graduate Theses and Dissertations

High efficiency optoelectronic devices rely on high quality materials making up the device structure. The scope of this thesis investigates the effectiveness of rapid thermal annealing (RTA) at improving the material quality of GaAsBi/GaAs heterostructures. During the fabrication of a device, the contacts of the device had the rapid thermal annealing process accomplished to produce ohmic contacts and this research explored if this annealing treatment degraded the quantum wells that made up the active region of a device. To investigate these effects, a system to measure the photoluminescence of the material system was constructed utilizing Fourier Transform Infrared Spectroscopy. The …

Electrical Design Considerations And Packaging Of Power Electronic Modules, Shijie Wang

Graduate Theses and Dissertations

A modern power electronic module can save significant energy usage in the power electronic systems by improving their switching efficiencies. One way to improve the efficiency of the power electronic module is to reduce its parasitic circuit elements. The purpose of this thesis is to investigate the mitigation of parasitic circuit elements in power electronic modules. General methods of mitigating parasitic inductances were analyzed by the Q3D Extractor and verified by the time-domain reflectometry (TDR) measurements. In most cases, the TDR measurement results closely matched those predicted by the Q3D Extractor. These methods were applied to design and analyze a …

Design And Fabrication Of Inverter And Rectifier Modules For Indirect Matrix Converter Applications, Saikishore Talakokkula

Graduate Theses and Dissertations

In power converter applications, silicon carbide (SiC) power semiconductor devices are preferred over their silicon counterparts due to many advantages such as wide bandgap, high junction temperatures and low on-state resistance. The SiC devices provide reduced conduction and switching losses. Due to the above mentioned advantages the power conversion efficiency of SiC devices is better compared to that of silicon (Si) devices.

This thesis studies the implementation of 1200V/17A Normally-off SiC JFETs for an indirect matrix converter (IMC) application. A discussion on the parasitic inductance optimization is presented based on the electromagnetic simulation results extracted from the Ansoft Q3D extractor. …

High Voltage Direct Current Energy Transmission Using Modular Multilevel Converters, David Alejandro Guzman Pinzon

Graduate Theses and Dissertations

This thesis focus on high voltage direct current (HVdc) energy transmission using modular multilevel converter (MMC) based terminals. It provides a brief comparison between different HVdc technologies, focusing on voltage source converters (HVdc-VSC) with the MMC-based terminal emerging as the topology of choice for ratings less than 1 GW. The controllers for a two-terminal HVdc-link are analyzed and Matlab/Simulink^TM simulation models are presented. The simplified models and full Matlab/Simulink^TM based model are used to select the gains for the MMC controllers. Simulation results carried out on the full model validated the proposed methodologies. A new control technique that …

Device Characterization And Compact Modeling Of The Sige Hbt In Extreme Temperature Environments, Beth Olivia Woods

Graduate Theses and Dissertations

The silicon germanium heterojunction bipolar transistor, SiGe HBT, has very high frequency response but limited voltage range. Commercial communication applications in wireless and system integration have driven the development of the SiGe HBT. However, the device's excellent electrical performance goes beyond the commercial environment. The SiGe HBT performs exceptionally at low temperatures. The device DC current gain and AC small-signal gain significantly increase in the cryogenic temperature range. Applications at low temperatures with expansive temperature range specifications need an HBT compact model to accurately represent the device's performance.

In this work, a compact model referenced at 300K was developed to …

The Development And Packaging Of A High-Density, Three-Phase, Silicon Carbide (Sic) Motor Drive, Jared Hornberger

Graduate Theses and Dissertations

Technology advances within the power electronics field are resulting in systems characterized by higher operating efficiencies, reduced footprint, minimal form factor, and decreasing mass. In particular, these attributes and characteristics are being inserted into numerous consumer applications, such as light-emitting diode lighting, compact fluorescent lighting, smart phones, and tablet PCs, to industrial applications that include hybrid, electric, and plug-in electric vehicles and more electric aircraft. To achieve the increase in energy efficiency and significant reduction in size and mass of these systems, power semiconductor device manufacturers are developing silicon carbide (SiC) semiconductor technology.

In this dissertation, the author discusses the …

Topics On Light-Emitting-Diode Driver Research, Jaber Hasan

Graduate Theses and Dissertations

In this dissertation, light-emitting-diode (LED) drivers are investigated for efficiency issues related to driving Red-Green-Blue (RGB) pixels and multiple LED strings in parallel. A high-efficiency digitally controlled RGB LED driver was designed for driving a 3x3 RGB LED display panel. A multiplexer was used to sense the voltage drop across the current controllers. This driver maintained a minimum drive voltage across the RGB LED pixels required to keep it in regulation leading to a reduction of unwanted power losses in the RGB LED pixels by selecting the minimum drop across the current-controllers as the reference voltage of the digital controller. …

A Silicon Carbide Linear Voltage Regulator For High Temperature Applications, Javier Antonio Valle Mayorga

Graduate Theses and Dissertations

Current market demands have pushed the capabilities of silicon to the edge. High temperature and high power applications require a semiconductor device to operate reliably in very harsh environments. This situation has awakened interests in other types of semiconductors, usually with a higher bandgap than silicon's, as the next venue for the fabrication of integrated circuits (IC) and power devices. Silicon Carbide (SiC) has so far proven to be one of the best options in the power devices field.

This dissertation presents the first attempt to fabricate a SiC linear voltage regulator. This circuit would provide a power management option …

Delay Insensitive Ternary Logic Utilizing Cmos And Cntfet, Ravi Sankar Parameswaran Nair

Graduate Theses and Dissertations

As digital circuit design continues to evolve due to progress of semiconductor processes well into the sub 100nm range, clocked architectures face limitations in a number of cases where clockless asynchronous architectures require substantially less power, generate less noise, and produce less electromagnetic interference (EMI). This dissertation develops the Delay Insensitive Ternary Logic (DITL) asynchronous design paradigm that combines the designs aspects of similar Dual-Rail asynchronous paradigms and Boolean logic to create a single wire per bit, three voltage signaling and logic scheme.

DITL is designed at the transistor level using multi-threshold CMOS and carbon nanotube (CNT) FETs to develop …

Modeling And Characterization Of P-Type Silicon Carbide Gate Turn Off Thyristors, Osama Shihadeh Saadeh

Graduate Theses and Dissertations

Silicon carbide (SiC) power semiconductor devices have emerged in the past decade as the most promising technology for next generation power electronic applications ranging for electric vehicles to grid-connected power routing and conversion interfaces. Several devices have been developed, and even some have been released commercially, including diodes, MOSFETs, JFETs, thyristors, gate turn-off thyristors, and IGBTs. The model development, characterization and experimental validation of SiC p-type Gate Turn-off Thyristors (GTO) is presented in this work. The GTO device in this work is being used as part of a SiC-based solid-state fault current limiter under development at the University of Arkansas' …

Fabrication Of Composite Nanomaterials For Thin Film Amorphous Silicon Solar Cells, Benjamin Seth Newton

Graduate Theses and Dissertations

A material with the precise combination of amorphous silicon and polycrystalline silicon would be able to take advantage of the high absorption capabilities of amorphous silicon and the electron transport capabilities of polycrystalline silicon. Polycrystalline nanostructures in the form of wires can also take advantage of other properties of light absorption, trapping and scattering inherent in nanowire structures. These properties of high absorption and electron transport in one device would lead to advances in the search for highly efficient low cost solar cells and sensors. In this work a thin film material composed of an array of polycrystalline silicon nanostructures …