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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Laser Cursor, Michael Liman Jun 2011

Laser Cursor, Michael Liman

Electrical Engineering

A user controls a cursor on a computer screen using a laser pointer.  A camera picks up the laser pointer’s position and sends the data to the computer to move the cursor in the correct position.


Project 308: Augmented Reality Mario Kart, Joseph Abad, David Allender, Joryl Calizo, Ryan Gaspar, Gavin Lee Jun 2011

Project 308: Augmented Reality Mario Kart, Joseph Abad, David Allender, Joryl Calizo, Ryan Gaspar, Gavin Lee

Computer Engineering

Mario Kart is a popular go-kart racing game developed by Nintendo. The premise of the game is simple: drive a go-kart along a racetrack and reach the finish line before the other players. What makes this game unique, however, is the inclusion of weapons, traps, and other projectiles that a player can use to gain an advantage in the race. We have taken on the challenge of not only recreating this amazing game, but using the art of Augmented Reality to fully immerse the player in the full experience. Rather than play the game on a television screen with a …


Low-Power Self-Sustaining Schedule Display, Samuel (Sam) August Jun 2011

Low-Power Self-Sustaining Schedule Display, Samuel (Sam) August

Electrical Engineering

The completed project is an Amazon Kindle, powered by a USB solar charger, running a student designed program to display a weekly schedule for a faculty member.  The purpose of the project was to design a sustainable electronic schedule display for use outside a faculty office.  It was designed in the hopes that faculty members could more easily update their schedules, and possibly allow for students to schedule appointments.  The program was designed using Java and the solar-charger was designed using a solar cell, Schottky diode, and a USB to micro-B USB cable.


Experimental And Theoretical Study Of Polarization-Dependent Optical Transitions In Inas Quantum Dots At Telecommunication-Wavelengths (1300-1500 Nm), Muhammad Usman, Susannah Heck, Edmund Clarke, Peter Spencer, Hoon Ryu, Ray Murray, Gerhard Klimeck May 2011

Experimental And Theoretical Study Of Polarization-Dependent Optical Transitions In Inas Quantum Dots At Telecommunication-Wavelengths (1300-1500 Nm), Muhammad Usman, Susannah Heck, Edmund Clarke, Peter Spencer, Hoon Ryu, Ray Murray, Gerhard Klimeck

Birck and NCN Publications

observed, in contrast to recent reports for single QDJOURNAL OF APPLIED PHYSICS 109, 104510 (2011)
The design of some optical devices, such as semiconductor optical amplifiers for telecommunication applications, requires polarization-insensitive optical emission at long wavelengths (1300–1550 nm). Self-assembled InAs/GaAs quantum dots (QDs) typically exhibit ground state optical emissions at wavelengths shorter than 1300 nm with highly polarization-sensitive characteristics, although this can be modified by the use of low growth rates, the incorporation of strain-reducing capping layers, or the growth of closely-stacked QD layers. Exploiting the strain interactions between closely stacked QD layers also affords greater freedom in the choice …


Showcase For The Advantages Of Asynchronous Vs. Synchronous Circuits, Justin Roark May 2011

Showcase For The Advantages Of Asynchronous Vs. Synchronous Circuits, Justin Roark

Electrical Engineering Undergraduate Honors Theses

Synchronous circuits dominate the semiconductor industry, but asynchronous circuitry is becoming more popular and will continue to do so, as evidenced by the International Technology Roadmap for Semiconductors. Asynchronous circuits, when compared to synchronous circuits, display tolerance to supply voltage and temperature variation. The goal of this project is to demonstrate these two advantages. The project will compare two microcontrollers, a synchronous 8051 and an asynchronous 8031, which will both play a song under various stresses. Note that an 8031 and 8051 are the same, except for the 8051 includes an on-chip instruction memory, whereas the 8031's is off-chip. When …


Self-Assembling Organic Semiconductors With Tunable Electronic Properties Based On Novel Asymmetric Phenazine And Bisphenazine, Kyoungmi Jang May 2011

Self-Assembling Organic Semiconductors With Tunable Electronic Properties Based On Novel Asymmetric Phenazine And Bisphenazine, Kyoungmi Jang

UNLV Theses, Dissertations, Professional Papers, and Capstones

Current demands in the area of organic semiconductors focus on both electronic and self-assembling properties. Particularly, one-dimensionally grown nanostructures of small organic semiconductors have drawn much attention for nanodevice fabrication. Self-assembly through various intermolecular interactions has been widely used to produce one-dimensionally grown nanostructures which can be induced by various methods such as rapid solution dispersion, a phase transfer method, vapor annealing, crystallization, and organogelation in conjunction with proper molecular design. Controlling the morphology of the nanostructures plays an important role in achieving desirable properties in optoelectronic device applications. While significant advancements have been made in developing molecular architectures for …


Design Guide For Cmos Process On-Chip 3d Inductor Using Thru-Wafer Vias, Gary Vanackern May 2011

Design Guide For Cmos Process On-Chip 3d Inductor Using Thru-Wafer Vias, Gary Vanackern

Boise State University Theses and Dissertations

Three-dimensional (3D) inductors using high aspect ratio (10:1) thru-wafer via (TWV) technology in a complementary metal oxide semiconductor (CMOS) process have been designed, fabricated, and measured. The inductors were designed using 500 μm tall vias with the number of turns ranging from 1 to 20 in both a wide and narrow trace width to space ratios. Radio frequency characterization was studied with emphasis upon de-embedding techniques and resulting effects. The open, short, thru de-embedding (OSTD) technique was used to measure all devices. The highest quality factor (Q) measured was 11.25 at 798MHz for a 1-turn device with a self-resonant frequency …


Shaped Mems Contact, Ronald A. Coutu Jr., Paul E. Kladitis, Robert L. Crane Mar 2011

Shaped Mems Contact, Ronald A. Coutu Jr., Paul E. Kladitis, Robert L. Crane

AFIT Patents

A MEMS switch fabrication process and apparatus inclusive of a bulbous rounded surface movable contact assembly that is integral with the switch movable element and achieving of long contact wear life with low contact electrical resistance. The disclosed process is compatible with semiconductor integrated circuit fabrication materials and procedures and includes an unusual photoresist reflow step in which the bulbous contact shape is quickly defined in three dimensions from more easily achieved integrated circuit mask and etching-defined precursor shapes. A plurality of differing photoresist materials are used in the process. A large part of the contact and contact spring formation …


Electromagnetic Modeling And Measurement Of Adaptive Metamaterial Structural Elements, Matthew E. Jussaume Mar 2011

Electromagnetic Modeling And Measurement Of Adaptive Metamaterial Structural Elements, Matthew E. Jussaume

Theses and Dissertations

This document addresses two major obstacles facing metamaterial development: uncertainty in the characterization of electromagnetic field behavior in metamaterial structures and the relatively small operational bandwidth of metamaterial structures. To address the first obstacle, a method of prediction aided measurement is developed and exploited to examine the field interactions within metamaterial devices. The fusion of simulation and measurement techniques enhances the understanding of the physical interactions of fields in the presence of metamaterials. To address the second obstacle, this document characterizes the effectiveness of an adaptive metamaterial design that incorporates a microelectromechanical systems (MEMS) variable capacitor. Applying voltages to the …


Optical Metamaterial Design, Fabrication And Test, Jack P. Lombardi Mar 2011

Optical Metamaterial Design, Fabrication And Test, Jack P. Lombardi

Theses and Dissertations

Metamaterials, materials that make use of naturally occurring materials and designed structures to create materials with special properties not found in nature, are a fascinating new area of research, combining the fields of physics, microfabrication, and material science. This work will focus on the development of metamaterials operating in the visible and infrared which will be constructed and tested for basic optical properties. Possible applications for these materials will not be investigated. The this work will go into the fabrication and test of layered metal-dielectric structures, called layered metamaterials, as these structures hold potential for applications in advanced optical systems. …


Led Spotlight, Eric Toussaint Mar 2011

Led Spotlight, Eric Toussaint

Electrical Engineering

This report details the development and construction of an LED spotlight useable in a theatrical or architectural setting.  In depth background information, initial design concepts, lighting instrument specifications, assembly, testing, and conclusions from results are highlighted in this document.  Project goals include efforts to support more energy efficient lighting in the arts and general lighting applications and a decrease in overall costs for energy used in all dramatic and architectural lighting applications.


Tuning Lattice Thermal Conductance By Porosity Control In Ultrascaled Si And Ge Nanowires, Abhijeet Paul, Gerhard Klimeck Feb 2011

Tuning Lattice Thermal Conductance By Porosity Control In Ultrascaled Si And Ge Nanowires, Abhijeet Paul, Gerhard Klimeck

Birck and NCN Publications

Porous nanowires 􏰎NWs􏰍 with tunable thermal conductance are examined as a candidate for thermoelectric devices with high efficiency. Thermal conductance 􏰎􏱆l􏰍 of porous NWs is calculated using the phonon dispersion obtained from a modified valence force field model. Porosity in the NWs break the crystal symmetry leading to the reduction in ballistic 􏱆l. 􏰐100􏰑 Si and Ge NWs show similar percentage reductions in 􏱆l for the same amount of porosity. The model predicts an anisotropic reduction in 􏱆l in SiNWs, with 􏰐111􏰑 showing the maximum reduction followed by 􏰐100􏰑 and 􏰐110􏰑 for a similar hole radius. The reduction in 􏱆l …


Charge Storage Characteristics Of Ultra-Small Pt Nanoparticle Embedded Gaas Based Non-Volatile Memory, Reginald Jeff, M Yun, B Ramalingam, B Lee, V Misra, Gregory Edward Triplett, Shubhra Gangopadhyay Jan 2011

Charge Storage Characteristics Of Ultra-Small Pt Nanoparticle Embedded Gaas Based Non-Volatile Memory, Reginald Jeff, M Yun, B Ramalingam, B Lee, V Misra, Gregory Edward Triplett, Shubhra Gangopadhyay

Electrical and Computer Engineering Publications

Charge storage characteristics of ultra-small Pt nanoparticle embedded devices were characterized by capacitance-voltage measurements. A unique tilt target sputtering configuration was employed to produce highly homogenous nanoparticle arrays. Pt nanoparticle devices with sizes ranging from ∼0.7 to 1.34 nm and particle densities of ∼3.3–5.9 × 1012 cm−2 were embedded between atomic layer deposited and e-beam evaporated tunneling and blocking Al2O3 layers. These GaAs-based non-volatile memory devices demonstrate maximum memory windows equivalent to 6.5 V. Retention characteristics show that over 80% charged electrons were retained after 105 s, which is promising for device applications.


Reduced Auger Recombination In Mid-Infrared Semiconductor Lasers, Robert Bedford, Gregory Edward Triplett, David H. Tomich, Stephan W. Koch, Jerome Moloney, Jorg Hader Jan 2011

Reduced Auger Recombination In Mid-Infrared Semiconductor Lasers, Robert Bedford, Gregory Edward Triplett, David H. Tomich, Stephan W. Koch, Jerome Moloney, Jorg Hader

Electrical and Computer Engineering Publications

A quantum-design approach to reduce the Auger losses in two micron InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a 3X reduction in the threshold, which results in 4.6 lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 and represents about a 19-fold reduction in the equivalent “Auger coefficient.”


A Compact Physical Model For Morphology Induced Intrinsic Degradation Of Polymer Based Bulk Heterojunction Solar Cell, Biswajit Ray, Muhammad A. Alam Jan 2011

A Compact Physical Model For Morphology Induced Intrinsic Degradation Of Polymer Based Bulk Heterojunction Solar Cell, Biswajit Ray, Muhammad A. Alam

Birck and NCN Publications

The gradual loss of efficiency during field operation poses a fundamental challenge for economic viability of any solar cell technology. Well known examples include light-induced degradation in Si-based cell (Staebler-Wronski effect), Cu diffusion in thin film (CIGS) cell, hot-spot degradation in series connected modules, etc. Here we develop a compact model for an intrinsic degradation concern for bulk heterojunction type organic photovoltaic (BH-OPV) cells that involve continued (thermal) phase segregation of the donor-acceptor molecules leading to characteristic loss of efficiency and performance. Our approach interprets a number of BH-OPV device degradation measurements within a common framework and suggests/rationalizes intuitive routes …


Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali Jan 2011

Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali

Physics Faculty Publications

The effect of nanosecond pulsed laser excitation on surface diffusion during the growth of Ge on Si(100) at 250 °C was studied. In situ reflection high-energy electron diffraction was used to measure the surface diffusion coefficient while ex situ atomic force microscopy was used to probe the structure and morphology of the grown quantum dots. The results show that laser excitation of the substrate increases the surface diffusion during the growth of Ge on Si(100), changes the growth morphology, improves the crystalline structure of the grown quantum dots, and decreases their size distribution. A purely electronic mechanism of enhanced surface …


Precise Control Of Highly Ordered Arrays Of Nested Semiconductor/Metal Nanotubes, Diefeng Gu, Helmut Baumgart, Kandabara Tapily, Pragya Shrestha, Gon Namkoong, Xianyu Ao, Frank Müller Jan 2011

Precise Control Of Highly Ordered Arrays Of Nested Semiconductor/Metal Nanotubes, Diefeng Gu, Helmut Baumgart, Kandabara Tapily, Pragya Shrestha, Gon Namkoong, Xianyu Ao, Frank Müller

Electrical & Computer Engineering Faculty Publications

Lithographically defined microporous templates in conjunction with the atomic layer deposition (ALD) technique enable remarkable control of complex novel nested nanotube structures. So far three-dimensional control of physical process parameters has not been fully realized with high precision resolution, and requires optimization in order to achieve a wider range of potential applications. Furthermore, the combination of composite insulating oxide layers alternating with semiconducting layers and metals can provide various types of novel applications and eventually provide unique and advanced levels of multifunctional nanoscale devices. Semiconducting TiO2 nanotubes have potential applications in photovoltaic devices. The combination of nanostructured semiconducting materials …


Nano-Patterned High-Responsivity Gaas Metal-Semiconductor-Metal Photodetector, Ayman Karar, Chee Leong Tan, Kamal Alameh, Yong Tak Lee Jan 2011

Nano-Patterned High-Responsivity Gaas Metal-Semiconductor-Metal Photodetector, Ayman Karar, Chee Leong Tan, Kamal Alameh, Yong Tak Lee

Research outputs 2011

In this paper, we use the finite difference time-domain (FDTD) method to optimize the light absorption of an ultrafast nano-grating plasmonic GaAs metal-semiconductor-metal photodetector (MSM-PD) employing double metal nano-gratings. The geometry of the MSM-PD is theoretically investigated, leading to improved light absorption near the design wavelength of GaAs due to plasmon-assisted electric and magnetic field concentration through a subwavelength aperture. Simulation results show up to 8- and 21-times light absorption enhancement for the single and double nano-grating structure, respectively, in comparison to conventional MSM-PDs. Experimentally, more than 4 times enhancement in photocurrent is demonstrated for a single top nano-grating MSM-PD …


Universality Of Non-Ohmic Shunt Leakage In Thin-Film Solar Cells, Sourabh Dongaonkar, Jonathan D. Servaites, Grayson M. Ford, Stephen Loser, James E. Moore, Ryan M. Gelfand, Hooman Mohseni, Hugh W. Hillhouse, Rakesh Agrawal, Mark A. Ratner, Tobin J. Marks, Mark Lundstrom, Muhammad A. Alam Dec 2010

Universality Of Non-Ohmic Shunt Leakage In Thin-Film Solar Cells, Sourabh Dongaonkar, Jonathan D. Servaites, Grayson M. Ford, Stephen Loser, James E. Moore, Ryan M. Gelfand, Hooman Mohseni, Hugh W. Hillhouse, Rakesh Agrawal, Mark A. Ratner, Tobin J. Marks, Mark Lundstrom, Muhammad A. Alam

Birck and NCN Publications

We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells, and Cu(In,Ga)Se2 (CIGS) cells. All three device types exhibit a significant shunt leakage current at low forward bias (V< ∼ 0.4) and reverse bias, which cannot be explained by the classical solar cell diode model. This parasitic shunt current exhibits non-Ohmic behavior, as opposed to the traditional constant shunt resistance model for photovoltaics. We show here that this shunt leakage (Ish), across all three solar cell types considered, is characterized by the following common phenomenological features: (a) voltage symmetry about V = 0, (b) nonlinear (power law) voltage dependence, and (c) extremely weak temperature dependence. Based on this analysis, we provide a simple method of subtracting this shunt current component from …


Modeling The Random Component Of Manufacturing Yield Of Integrated Circuits., David L. Farnsworth, Michael E. Long Dec 2010

Modeling The Random Component Of Manufacturing Yield Of Integrated Circuits., David L. Farnsworth, Michael E. Long

Articles

A model is created for the number of integrated circuits that are good from each wafer on which they are fabricated. The goal is to separate the random or common cause loss from the systematic or special loss. The random loss from this type of process is modeled so that false alarms indicating systematic loss are less likely to occur and so that the structure of the systematic loss can be determined.


An Investigation Of Carrier Transport In Hafnium Oxide/Silicon Dioxide Mos Gate Dielectric Stacks From 5.6-400k, Richard G. Southwick Iii Dec 2010

An Investigation Of Carrier Transport In Hafnium Oxide/Silicon Dioxide Mos Gate Dielectric Stacks From 5.6-400k, Richard G. Southwick Iii

Boise State University Theses and Dissertations

Hafnium oxide (HfO2) is replacing silicon dioxide (SiO2) as the gate dielectric in metal oxide semiconductor (MOS) structures driven mainly by need to reduce high leakage currents observed in sub-2nm SiO2. The high dielectric constant of HfO2 (~25) compared to SiO2 (3.9 bulk) allows a thicker HfO2 layer to be used in place of the thinner SiO2 layer thereby reducing the gate leakage current in MOS devices while maintaining the same capacitive coupling provided by the thinner SiO2. However, incorporating HfO2 into MOS devices produces a SiO …


Mems-Based Pufs For Cryptographic Applications, Nicholas Shane Patrick Nov 2010

Mems-Based Pufs For Cryptographic Applications, Nicholas Shane Patrick

Honors Capstone Projects and Theses

No abstract provided.


Application Of Signal Advance Technology To Electrophysiology, Chris M. Hymel Aug 2010

Application Of Signal Advance Technology To Electrophysiology, Chris M. Hymel

Dissertations and Theses (Open Access)

Medical instrumentation used in diagnosis and treatment relies on the accurate detection and processing of various physiological events and signals. While signal detection technology has improved greatly in recent years, there remain inherent delays in signal detection/ processing. These delays may have significant negative clinical consequences during various pathophysiological events. Reducing or eliminating such delays would increase the ability to provide successful early intervention in certain disorders thereby increasing the efficacy of treatment.

In recent years, a physical phenomenon referred to as Negative Group Delay (NGD), demonstrated in simple electronic circuits, has been shown to temporally advance the detection of …


The Applications And Limitations Of Printable Batteries, Matthew Delmanowski Jun 2010

The Applications And Limitations Of Printable Batteries, Matthew Delmanowski

Graphic Communication

This study focuses on the potential applications for printed batteries and how they could affect the printing industry. It also analyzes the main problems associated with manufacturing this technology and what needs to be done to overcome these issues. To find the answers to these questions, two methods of research were used. The first was through the elite and specialized interviewing of Dr. Scott Williams of Rochester Institute of Technology and Professor Nancy Cullins from Cal Poly. The second form of research was a common, yet useful, method called secondary research. This entailed looking at recent written research papers about …


Enhanced Light Extraction Efficiency From Gan Light Emitting Diodes Using Photonic Crystal Grating Structures, Simeon S. Trieu Jun 2010

Enhanced Light Extraction Efficiency From Gan Light Emitting Diodes Using Photonic Crystal Grating Structures, Simeon S. Trieu

Master's Theses

Gallium nitride (GaN) light emitting diodes (LED) embody a large field of research that aims to replace inefficient, conventional light sources with LEDs that have lower power, higher luminosity, and longer lifetime. This thesis presents an international collaboration effort between the State Key Laboratory for Mesoscopic Physics in Peking University (PKU) of Beijing, China and the Electrical Engineering Department of California Polytechnic State University, San Luis Obispo. Over the course of 2 years, Cal Poly’s side has simulated GaN LEDs within the pure blue wavelength spectrum (460nm), focusing specifically on the effects of reflection gratings, transmission gratings, top and bottom …


Negative Conductance Load Modulation Rf Power Amplifier, Cody R. Neslen Jun 2010

Negative Conductance Load Modulation Rf Power Amplifier, Cody R. Neslen

Master's Theses

The number of mobile wireless devices on the market has increased substantially over the last decade. The frequency spectrum has become crowded due to the number of devices demanding radio traffic and new modulation schemes have been developed to accommodate the number of users. These new modulation schemes have caused very poor efficiencies in power amplifiers for wireless transmission systems due to high peak-to-average power ratios (PAPR). This thesis first presents the issue with classical power amplifiers in modern modulation systems. A brief overview of current attempts to mitigate this issue is provided. A new RF power amplifier topology is …


Production Of Multiwall Carbon Nanotuse For Alcohol Sensor Application., Ebtehal Saleh Alshaqaq May 2010

Production Of Multiwall Carbon Nanotuse For Alcohol Sensor Application., Ebtehal Saleh Alshaqaq

Student Works (2010-2019)

Multiwall carbon nanotube/polyethylene oxide (PEO), multiwall carbon nanoube/polyvinyl alcohol(PVA) and multiwall carbon nanotube/ polyvinyl alcohol(PVA)/zinc oxide(ZnO) have been tested as chemical sensors and detailed study on the effect of different gas concentration and material properties on gas sensitivity is presented. Initial composites were prepared by a simple solution casting and characterized by x-ray diffraction for ZnO, Fourier transform infra-red spectroscopy (FTIR) and scanning electron microscopy (SEM) to demonstrate crystallite size of ZnO, the morphology and surface area respectively. On the other hand, MWCNT/PEO , MWCNT/PVA , MWCNT/PVA/ZnO were prepared with different loading MWCNT and ZnO. The chemical sensing properties of …


Vibrational Frequencies Of Magnetic Random Access Memory Materials., Lee Li Ling May 2010

Vibrational Frequencies Of Magnetic Random Access Memory Materials., Lee Li Ling

Student Works (2010-2019)

The advantages of MRAM are so overwhelming which acts as motivation for scientist in further investigation for better read and write operation. The types of materials used are closely related to the cell performance in forming the ferromagnetic layers. Thus,the vibrational frequencies of the MRAM materials are of interest. Clusters for the two types of combinations, FexNiy and FexCoyBz are built. Subsequently, vibrational frequencies of each cluster are calculated theoretically from the first principles. The secular determinant is large when the number of electrons in a cluster is large. For the simplest combination of Fe-Ni cluster, (atomic number of an …


Investigation Of Rf Curing Parameters In Resin Infusion Molding, Christopher K. Love Mar 2010

Investigation Of Rf Curing Parameters In Resin Infusion Molding, Christopher K. Love

Theses and Dissertations

The purpose of this study is to investigate RF or Radio Frequency energy as a viable alternative to traditional heating methods for the purpose of curing resins used in resin infusion molding, a molding system for polymeric composites. Traditional heating/curing methods include technologies such as room temperature, oven, microwave, infrared, and ultraviolet. Although RF curing provides far more advantages than disadvantages, its implementation into a manufacturing process can be challenging. Specifically, three critical elements must be present in order for RF to function in a manner that is profitable to the manufacturer. Those elements are: (1) the proper generator (voltage …


High Power Microwave (Hpm) And Ionizing Radiation Effects On Cmos Devices, Nicholas A. Estep Mar 2010

High Power Microwave (Hpm) And Ionizing Radiation Effects On Cmos Devices, Nicholas A. Estep

Theses and Dissertations

Integrated circuits (ICs) are inherently complicated and made worse by increasing transistor quantity and density. This trend potentially enhances concomitant effects of high energy radiation and local or impressed electromagnetic interference (EMI). The reduced margin for signal error may counter any gain in radiation hardness from smaller device dimensions. Isolated EMI and ionizing radiation studies on circuits have been conducted extensively over the past 30 years. However, little focus has been placed on the combined effects. To investigate the effect of combined EMI and ionizing radiation, two complementary metal oxide semiconductor (CMOS) inverter technologies (CD4069 and SN74AUC1G04) were analyzed for …