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Articles 67051 - 67080 of 197009
Full-Text Articles in Engineering
Utah State Steel Bridge Team Takes 15th At Nationals | College Of Engineering, Utah State University
Utah State Steel Bridge Team Takes 15th At Nationals | College Of Engineering, Utah State University
College of Engineering News
The Utah State University Steel Bridge team placed 15th at the National Steel Bridge Competition that took place in Carbondale, Illinois on May 31.
Investigation Of Tactile Sensory System Configuration For Construction Hazard Perception, Sayan Sakhakarmi, Jeewoong Park
Investigation Of Tactile Sensory System Configuration For Construction Hazard Perception, Sayan Sakhakarmi, Jeewoong Park
Civil and Environmental Engineering and Construction Faculty Research
The application of tactile-based wearable devices to assist in navigation for people with low sight/low memory has demonstrated the feasibility of using such devices as a means of communication. Accordingly, a previous study in construction research investigated various parameters of tactile signals to develop a communicable system for potential application in construction hazard communication. However, the nature of construction limits the application of such devices to the body of construction workers, and it is important to understand sensor design parameters for improved communication, which has not been given significant attention yet. Therefore, this study aims to determine key design factors …
Memcapacitive Reservoir Computing Architectures, Dat Tien Tran
Memcapacitive Reservoir Computing Architectures, Dat Tien Tran
Dissertations and Theses
In this thesis, I propose novel brain-inspired and energy-efficient computing systems. Designing such systems has been the forefront goal of neuromorphic scientists over the last few decades. The results from my research show that it is possible to design such systems with emerging nanoscale memcapacitive devices.
Technological development has advanced greatly over the years with the conventional von Neumann architecture. The current architectures and materials, however, will inevitably reach their physical limitations. While conventional computing systems have achieved great performances in general tasks, they are often not power-efficient in performing tasks with large input data, such as natural image recognition …
Environmental And Occupational Impacts From U.S. Beef Slaughtering Are Of Same Magnitude Of Beef Foodborne Illnesses On Human Health, Shaobin Li, Jeyamkondan Subbiah, Bruce Dvorak
Environmental And Occupational Impacts From U.S. Beef Slaughtering Are Of Same Magnitude Of Beef Foodborne Illnesses On Human Health, Shaobin Li, Jeyamkondan Subbiah, Bruce Dvorak
Department of Agricultural and Biological Systems Engineering: Faculty Publications
Foodborne pathogens and occupational hazards are two primary safety concerns for U.S. beef slaughterhouses. The anthropogenic environmental impacts due to intensive resource use and pollution also exert threats to human health. Quantifying human health impacts from various sources remain a grand sustainability challenge for U.S. beef industry. We develop a framework to systematically estimate and compare human health impacts associated with U.S. beef foodborne illnesses from major pathogens and environmental impacts and occupational hazards from U.S. beef slaughtering on a common metric, disability-adjusted life year (DALY). Foodborne illnesses and occupational hazards are estimated by synthesizing published data and methodologies while …
Cost Effective, Highly Efficient Wireless Power Transfer Systems For Ev Battery Charging, Amir Masoud Bozorgi
Cost Effective, Highly Efficient Wireless Power Transfer Systems For Ev Battery Charging, Amir Masoud Bozorgi
LSU Doctoral Dissertations
The impact of changing inner diameter of wireless power transfer (WPT) coils on coupling coefficient is studied. It is demonstrated that at a certain outer and inner coil diameter, turn space variation has minor effect on the coupling coefficient. Next, two compensation networks, namely primary LCC and secondary LCC, which offer load-independent voltage transfer ratio and zero voltage switching for WPT, are presented. For both compensation networks, the condition for having zero voltage switching operation are derived. In addition, load-independent voltage transfer ratio (VTR) frequencies are obtained and VTR at each frequency is derived. Then, required equations for calculation of …
Conference Program, Erin Buckley, Christophe Moser, Brian Pogue, David Sampson
Conference Program, Erin Buckley, Christophe Moser, Brian Pogue, David Sampson
Advances in Optics for Biotechnology, Medicine and Surgery XVI [2019]
No abstract provided.
Erosion Resistance Of Tungsten-Carbide Coatings For Steel Pipes In Fluid Catalytic Cracking Units, Davis Vannasing, Jennifer Hulfachor
Erosion Resistance Of Tungsten-Carbide Coatings For Steel Pipes In Fluid Catalytic Cracking Units, Davis Vannasing, Jennifer Hulfachor
Materials Engineering
In petroleum processing, the flow of catalyst readily leads to erosion of piping in a fluid catalytic cracking unit. Advances in coating materials and processes necessitate a re-evaluation of current protection methods. Commercially available tungsten-carbide (WC) claddings and nanostructured WC-W CVD coatings were investigated as potential alternative erosion-resistant coatings. Erosion tests by solid particle impingement were conducted on 2 variations of claddings and 1 variation of WC-W coatings following ASTM standard G76. A36 steel coupons were used as reference samples. For statistical validation, 2-3 replications of the tests were performed for the claddings and WC-W coating. Testing was conducted using …
Flight Director Embedded System And Mobile Ios Application, Anthony Epshteyn
Flight Director Embedded System And Mobile Ios Application, Anthony Epshteyn
Computer Engineering
For my senior project, I was asked to assist an Aerospace Engineering professor with the design of his new glider. He needed to create a flight director-type instrument so that his pilot could get the aircraft’s positional data during flight. This positional data came from a powerful sensor mounted on the fuselage. To interface with the sensor, I created an embedded system comprised of a ESP32 micro-controller communicating with the sensor via UART/RS-232. The micro-controller was mounted on a breadboard and connected to the sensor via jumper wires. The ESP32 featured a Bluetooth chip that allowed for communication using the …
Keylime, Matthew Orgill
Keylime, Matthew Orgill
Computer Engineering
This project creates an iOS mobile app geared specifically toward the students of California Polytechnic State University. The app aims to provide the ability for users to discover new restaurants to checkout in the central coast area. These restaurants can be filtered to the user’s choosing based on the price of food, rating the restaurant has received, distance away from the user, and type of food. In addition, featured deals that local restaurants currently offer can be found on the app. Each restaurant can be favorited by the user to allow for better filtering of discovering new restaurants and to …
A Survey On Software Cost Estimation Techniques, Sai Mohan Reddy Chirra, Hassan Reza
A Survey On Software Cost Estimation Techniques, Sai Mohan Reddy Chirra, Hassan Reza
Computer Science Faculty Publications
The ability to accurately estimate the cost needed to complete a specific project has been a challenge over the past decades. For a successful software project, accurate prediction of the cost, time and effort is a very much essential task. This paper presents a systematic review of different models used for software cost estimation which includes algorithmic methods, non-algorithmic methods and learning-oriented methods. The models considered in this review include both the traditional and the recent approaches for software cost estimation. The main objective of this paper is to provide an overview of software cost estimation models and summarize their …
Implementation Of Multivariate Artificial Neural Networks Coupled With Genetic Algorithms For The Multi-Objective Property Prediction And Optimization Of Emulsion Polymers, David Chisholm
Master's Theses
Machine learning has been gaining popularity over the past few decades as computers have become more advanced. On a fundamental level, machine learning consists of the use of computerized statistical methods to analyze data and discover trends that may not have been obvious or otherwise observable previously. These trends can then be used to make predictions on new data and explore entirely new design spaces. Methods vary from simple linear regression to highly complex neural networks, but the end goal is similar. The application of these methods to material property prediction and new material discovery has been of high interest …
Processing Of Aluminum Foam Using A Double Replication Process, Luc Salvo, Sevara Mukhtarova
Processing Of Aluminum Foam Using A Double Replication Process, Luc Salvo, Sevara Mukhtarova
Acta of Turin Polytechnic University in Tashkent
The purpose of this paper is to look at the impact of small morphological variations on kinetic storage of infiltrated open-cell foams. For this a new production process was studied, and a general description of the process and its variants are given.
Radiation And Convective Losses In The Heat Sink Channel Of Photovoltaic-Thermal System, Oskar F. Tukhfatullin, Ramizulla A. Muminov
Radiation And Convective Losses In The Heat Sink Channel Of Photovoltaic-Thermal System, Oskar F. Tukhfatullin, Ramizulla A. Muminov
Euroasian Journal of Semiconductors Science and Engineering
. The processes of heat transfer in the channel of a liquid photovoltaic/thermal system of a flat construction without forced circulation are considered. A method of calculating the heat transfer coefficients by radiation and convection, the Nusselt and Reynolds numbers for a given photovoltaic/thermal system was proposed. It was determined that the processes of convective heat transfer in a flat photovoltaic/thermal system installed in the territory of the Republic of Uzbekistan at an optimum angle of inclination equal to the geographical latitude of the place of operation should be considered as for parallel plates located at tilt angle not more …
, Abatbay K. Uteniyazov, Kanatbay A. Ismailov, Fatima T. Srajatdinova
, Abatbay K. Uteniyazov, Kanatbay A. Ismailov, Fatima T. Srajatdinova
Euroasian Journal of Semiconductors Science and Engineering
The results of studies of the direct branch of the current – voltage characteristic of the Al-Al2O3-p-CdTe-Mo structure with base thicknesses d ~ 8÷10 μm are presented. It was shown that, along with point defects and impurities, complex complexes participate in the recombination processes in the base of the structure under study. It was established that at low current densities in point of recombination processes point defects take part, and at high current densities, when the recombination rate reaches full saturation of U≈NR/τi, the recombination processes in the samples under study are determined by complex complexes within which the electrons …
Serial And Shuntable Resistance Of Cigs Solar Photo-Electric Module In The Conditions Of Real Solar Lighting At Various Temperatures, Rustam R. Kobulov, Nuriddin A. Matchanov, Omonboy K. Ataboev, Farrukh A. Akbarov
Serial And Shuntable Resistance Of Cigs Solar Photo-Electric Module In The Conditions Of Real Solar Lighting At Various Temperatures, Rustam R. Kobulov, Nuriddin A. Matchanov, Omonboy K. Ataboev, Farrukh A. Akbarov
Euroasian Journal of Semiconductors Science and Engineering
The current-voltage characteristics of the solar photovoltaic module, based on a thin-film polycrystalline semiconductor binary compound Cu(In, Ga)Se2, under real solar illumination (Prad=780 ± 30 W/m2), in the temperature range of 25 °C-50 °C, have been studied and the values of serial and shunt resistance are determined. It has been established that with increasing temperature, the magnitudes of the series and shunting resistance of the solar photovoltaic module decrease, which is most likely due to the modulation of the resistance of the n-CdS buffer front layer.
Optical Power Meter For Diagnostics Of Fiber-Optic Communication Lines And Digital Multimeter, Feruza A. Giyasova, B. Sh. Yuldashev, Ruslan G. Zakirov, Gulkhayo T. Murodillaeva
Optical Power Meter For Diagnostics Of Fiber-Optic Communication Lines And Digital Multimeter, Feruza A. Giyasova, B. Sh. Yuldashev, Ruslan G. Zakirov, Gulkhayo T. Murodillaeva
Euroasian Journal of Semiconductors Science and Engineering
A multifunctional optical power attenuation meter in fiber optic cables for widespread use is proposed in this article. The main feature of the proposed meter is the ability to perform of diagnostics of mechanical damage of fiber-optic communication lines and determine the attenuation degree of a signal in the fiber-optic path in the spectral ranges of 1270-1340 nm and 1520-1580 nm, as well as the measurement of voltage, current and resistance in electrical circuits. The possibility of using the meter for diagnostics of onboard fiber-optic communication lines is justified.
Study Of The Morphological And Electrical Properties Of Films Of Solid Solution Znxsn1-Хse Obtained By The Method Of Cmbd, Kudrat M. Kuchkarov, Takhir M. Razykov, Bobur A. Ergashev, Rukhiddin T. Yuldoshov
Study Of The Morphological And Electrical Properties Of Films Of Solid Solution Znxsn1-Хse Obtained By The Method Of Cmbd, Kudrat M. Kuchkarov, Takhir M. Razykov, Bobur A. Ergashev, Rukhiddin T. Yuldoshov
Euroasian Journal of Semiconductors Science and Engineering
The ZnXSn1-XSe solid solution films were fabricated by the chemical molecular beam deposition (CMBD) method. The sources used were ZnSe and SnSe compounds of stoichiometric composition at the substrate temperature of 5600С. The morphological and electrophysical properties of the ZnXSn1-XSe solid solution films are investigated. Scanning electron microscope images showed that the grain sizes of the films are 8÷20 microns. The structural parameters of the obtained films are given. The electrical conductivity of the films was 15 ÷ 1 • 10-6 (Ohm·cm) -1 depending on the composition of the solid solution.
The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev
The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev
Euroasian Journal of Semiconductors Science and Engineering
This article discusses a multifunctional sensor based on a field-effect transistor with a p-n-junction. The sensor allows to register temperature, light intensity, pressure with high level of sensitivity. At the same time, ensuring the sensitivity of the structure to external influences is practically solved due to constructive changes. Due to constructive solutions, the proposed sensor based on a field-effect transistor greatly exceeds the similar diode structures in sensitivity.
Influence Of Heat Treatment On The Behaviorof Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova
Influence Of Heat Treatment On The Behaviorof Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova
Euroasian Journal of Semiconductors Science and Engineering
By means of Deep Level Transient Spectroscopy the kinetics of the annealing of the levels of tungsten in silicon during heat treatment in the temperature range 150÷4000С was studied. It was found a non-monotonic change in the concentration of deep levels Ec-0.30 eV and Ec-0.39 eV under isothermal annealing: the concentrations of both levels at short times increase, then the concentration level of Ec-0.30 eV sharply decreases, and the reduction of the concentration of deep level Ec-0.39 eV is much slower.
Infrared Spectroscopy Of Silicon Doped By Stannum And Manganese, Sharifa B. Utamuradova, Ravshanbek M. Ergashev, Khusniddin J. Matchanov
Infrared Spectroscopy Of Silicon Doped By Stannum And Manganese, Sharifa B. Utamuradova, Ravshanbek M. Ergashev, Khusniddin J. Matchanov
Euroasian Journal of Semiconductors Science and Engineering
The processes of defect formation in silicon doped by tin and manganese and their interaction with uncontrolled impurities were studied by infrared spectroscopy.It was found that the presence of impurities of transition and isovalent elements leads to a technological decrease in the concentration of process impurities – oxygen and carbon. It was found that the introduction of manganese in Si leads to a strong decrease in the concentration of interstitial optically active oxygen Noopt: in rapidly cooled samples Si there is a decrease of Noopt by 50% compared to the original Si.
The Photoluminescence Spectra Of Powders Of Zinc Oxide With Laser Excitation, Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, Abdulla K. Kurbonov
The Photoluminescence Spectra Of Powders Of Zinc Oxide With Laser Excitation, Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, Abdulla K. Kurbonov
Euroasian Journal of Semiconductors Science and Engineering
The original sensitive method of research of the nanopowders based on use of laser excitation and a multichannel spectrometer is offered. The developed method can be used for the analysis of quality of a wide class of the powders on the basis of laser spectroscopy of secondary radiation.
Laser Testing Of Silicon Wafers, Zakirjan T. Azamatov, Ilya A. Kulagin, Kakhkhor P. Abdurakhmanov, Nigora A. N.A. Akbarova
Laser Testing Of Silicon Wafers, Zakirjan T. Azamatov, Ilya A. Kulagin, Kakhkhor P. Abdurakhmanov, Nigora A. N.A. Akbarova
Euroasian Journal of Semiconductors Science and Engineering
The possibility of detection of defects in silicon wafers by Fourier analysis of digital images obtained by laser introscopy is shown.
Features The Generalities Of I-V Curve Formation In Mosfet With A Common Drain, Khayrulla K. Aripov, Akhmed M. Abdullayev, Shunkurjon T. Toshmatov
Features The Generalities Of I-V Curve Formation In Mosfet With A Common Drain, Khayrulla K. Aripov, Akhmed M. Abdullayev, Shunkurjon T. Toshmatov
Euroasian Journal of Semiconductors Science and Engineering
The results of theoretical and experimental studies of the generalities of current-voltage characteristics curve formation of metal-oxide-semiconductor transistors of the common drain are presented. The principal difference between input and output characteristics of the common drain from the analogical characteristics in the common source is shown. The source-gate and source characteristics of a metal-oxide-semiconductor transistor in the common drain are given. Combined families of source-gate and source characteristics of a metal-oxide-semiconductor transistor in the common source and drain are obtained.
Organic Photodiodes On The Basis Of Cottonfiber/Polymer Composite, Jonibek J. Hamdamov, Anvar S. Zakirov, Abdugafur T. Mamadalimov
Organic Photodiodes On The Basis Of Cottonfiber/Polymer Composite, Jonibek J. Hamdamov, Anvar S. Zakirov, Abdugafur T. Mamadalimov
Euroasian Journal of Semiconductors Science and Engineering
In this paper, we report a study on the optical and the electrical properties of pure cotton fibers (CF) from chemically surface- and morphology-modified samples coated with poly [2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) polymer by using a dip-coating method. The efficiency of white light luminescence of cotton fibers coated with meh- MEH-PPV polymer increased and became much more intense in comparison with the luminescence of uncoated fibers and blue, green and red stripes were observed in the luminescence structure. The сurrent-voltage characteristic of sandwich-type devices consisting of successive layers of ITO (Indium doped tin oxide coated glass)-PEDOT-PSS (Poly (3,4-ethylenedioxythiophene)-Poly(styrenesulfonate)-CF/MEH-PPV-Ag showed that up …
Influence Of Impurities Of Refractory Elements On The Inefficiency Of Charge Transfer In Charged Communication Devices, Abdugafur T. Mamadalimov, Shakhrukh Kh. Daliev
Influence Of Impurities Of Refractory Elements On The Inefficiency Of Charge Transfer In Charged Communication Devices, Abdugafur T. Mamadalimov, Shakhrukh Kh. Daliev
Euroasian Journal of Semiconductors Science and Engineering
The influence of impurities of refractory elements on the inefficiency of charge transfer in charge-coupled devices is investigated. Found that the magnitude of the inefficiency of transfer directly proportional to the density of surface States and the density of surface States in the CCD registers, with the resulting n losses n ≤ 0.1 depends on the type specially introduced impurities. It is shown that in CCD structures doped with impurities Ti, Zr and Hf relative to the control structures, the charge loss is greater, and in doped with impurities W and Mo, the charge loss is less.
Influence Of Rhodium And Iridium Impurity Atoms On The Capacitive Characteristics Of Si-Siо2 Structures, Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, Xotamjon J. Mansurov
Influence Of Rhodium And Iridium Impurity Atoms On The Capacitive Characteristics Of Si-Siо2 Structures, Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, Xotamjon J. Mansurov
Euroasian Journal of Semiconductors Science and Engineering
It was found that the doping of the semiconductor substrate with Rh and Ir atoms leads to the increase in the density of surface states at the Si – SiO2 interface. It is determined that the surface states, due to the presence of an impurity Rh and Ir are effective generation centers.
The Influence Of Γ -Irradiation On The Holographic Characteristics Of Chalcogenide Glassy Semiconductor, Zakirjan T. Аzamatov, Mira R. Bekchanova, Timur Z. Azamatov
The Influence Of Γ -Irradiation On The Holographic Characteristics Of Chalcogenide Glassy Semiconductor, Zakirjan T. Аzamatov, Mira R. Bekchanova, Timur Z. Azamatov
Euroasian Journal of Semiconductors Science and Engineering
Results of the research of holographic characteristics of chalcogenide glassy semiconductor films, under the influence of irradiation are presented. Found that in the range of radiation doses (roentgen) optical properties of (CGS) films and diffraction efficiency recorded holograms does not change. Also proved that the shelf life recorded holograms under certain conditions is 10 years or more.
Volt-Ampere Characteristics Of Mos Structures Al-Al2o3-P-Cdte-Mo – In The Forward Direction Of Current, Abatbay K. Uteniyazov, Kanatbay A. Ismailov, Fatima T. Srajatdinova
Volt-Ampere Characteristics Of Mos Structures Al-Al2o3-P-Cdte-Mo – In The Forward Direction Of Current, Abatbay K. Uteniyazov, Kanatbay A. Ismailov, Fatima T. Srajatdinova
Euroasian Journal of Semiconductors Science and Engineering
The results of studies of the direct branch of the current – voltage characteristic of the Al-Al2O3-p-CdTe-Mo structure with base thicknesses d ~ 8÷10 μm are presented. It was shown that, along with point defects and impurities, complex complexes participate in the recombination processes in the base of the structure under study. It was established that at low current densities in point of recombination processes point defects take part, and at high current densities, when the recombination rate reaches full saturation of U≈NR/τi, the recombination processes in the samples under study are determined by complex complexes within which the electrons …
The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev
The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev
Euroasian Journal of Semiconductors Science and Engineering
This article discusses a multifunctional sensor based on a field-effect transistor with a p-n-junction. The sensor allows to register temperature, light intensity, pressure with high level of sensitivity. At the same time, ensuring the sensitivity of the structure to external influences is practically solved due to constructive changes. Due to constructive solutions, the proposed sensor based on a field-effect transistor greatly exceeds the similar diode structures in sensitivity.
Optical Power Meter For Diagnostics Of Fiber-Optic Communication Lines And Digital Multimeter, Feruza A. Giyasova, B. Sh. Yuldashev, Ruslan G. Zakirov, Gulkhayo T. Murodillaeva
Optical Power Meter For Diagnostics Of Fiber-Optic Communication Lines And Digital Multimeter, Feruza A. Giyasova, B. Sh. Yuldashev, Ruslan G. Zakirov, Gulkhayo T. Murodillaeva
Euroasian Journal of Semiconductors Science and Engineering
A multifunctional optical power attenuation meter in fiber optic cables for widespread use is proposed in this article. The main feature of the proposed meter is the ability to perform of diagnostics of mechanical damage of fiber-optic communication lines and determine the attenuation degree of a signal in the fiber-optic path in the spectral ranges of 1270-1340 nm and 1520-1580 nm, as well as the measurement of voltage, current and resistance in electrical circuits. The possibility of using the meter for diagnostics of onboard fiber-optic communication lines is justified.