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3,854 full-text articles. Page 148 of 157.

Graphene-Based Interconnects : Electrical Performance And Reliability, Tianhua Yu 2011 University at Albany, State University of New York

Graphene-Based Interconnects : Electrical Performance And Reliability, Tianhua Yu

Legacy Theses & Dissertations (2009 - 2024)

According to the ITRS Roadmap, on-chip interconnects wire width and current density will reach 22 nm and 5.8×106 A/cm2 in 2020, respectively. The electrical resistivity of Cu increases with scaled critical dimensions due to exacerbated carrier scattering at grain boundaries and interfaces, resulting in signal speed degradation. Electronmigration (EM)-related failure due to intensified current distribution posts extra limits to ultra-scaled systems. Innovative interconnect solutions are needed to tackle performance and scaling challenges.


Cost-Effective Imprint Template Fabrication For Step And Flash Imprint Lithography, Adam Marc Munder 2011 University at Albany, State University of New York

Cost-Effective Imprint Template Fabrication For Step And Flash Imprint Lithography, Adam Marc Munder

Legacy Theses & Dissertations (2009 - 2024)

The College of Nanoscale Science and Engineering (CNSE) is studying imprint template fabrication with the 100kV Vistec VB300 Gaussian E-Beam writer. The major goal is to develop and advance imprint template fabrication technology using low cost quartz wafers for proof-of-concept demonstrations.


Investigation Of Titanium Nitride As Catalyst Support Material And Development Of Durable Electrocatalysts For Proton Exchange Membrane Fuel Cells, Bharat Avasarala 2011 University at Albany, State University of New York

Investigation Of Titanium Nitride As Catalyst Support Material And Development Of Durable Electrocatalysts For Proton Exchange Membrane Fuel Cells, Bharat Avasarala

Legacy Theses & Dissertations (2009 - 2024)

The impending energy and climatic crisis makes it imperative for human society to seek non-fossil based alternative sources for our energy needs. Although many alternative energy technologies are currently being developed, fuel cell technology provides energy solutions, which satisfy a wide range of applications. But the current fuel cell technology is far from its target of large scale commercialization mainly because of its high cost and poor durability. Considerable work has been done in reducing the cost but its durability still needs significant improvement. Of the various materials in a PEM fuel cell, the degradation of electrocatalyst affects its durability …


An Exploration Of Focused Electron Beam-Induced-Deposition At Cryogenic Temperatures, Matthew Bresin 2011 University at Albany, State University of New York

An Exploration Of Focused Electron Beam-Induced-Deposition At Cryogenic Temperatures, Matthew Bresin

Legacy Theses & Dissertations (2009 - 2024)

A modified version of electron beam-induced-deposition (EBID) has been studied, where cryogenic substrates were employed to alter the growth environment. Cryogenic substrates enabled multi-layer condensed phase films, which, upon electron exposure and reheating to room temperature, exhibited several unique surface morphologies not present in traditional EBID deposits. By analyzing the composition and structure of the cryogenic deposits, along with simulation of energy deposition from exposure, a diffusion based growth mechanism has been proposed. To test the validity of the proposed model, several process variables were investigated including electron flux, electron fluence, condensate thickness and precursor type. Using the knowledge garnered …


The Formation And Distribution Of Hippocampal Synapses On Patterned Neuronal Networks, Natalie Michelle Dowell-Mesfin 2011 University at Albany, State University of New York

The Formation And Distribution Of Hippocampal Synapses On Patterned Neuronal Networks, Natalie Michelle Dowell-Mesfin

Legacy Theses & Dissertations (2009 - 2024)

ABSTRACT


Effects Of Radiation-Induced Carbon Contamination On The Printing Performance Of Extreme Ultraviolet Masks, Yu-Jen Fan 2011 University at Albany, State University of New York

Effects Of Radiation-Induced Carbon Contamination On The Printing Performance Of Extreme Ultraviolet Masks, Yu-Jen Fan

Legacy Theses & Dissertations (2009 - 2024)

This dissertation investigates one of the remaining issues for extreme ultraviolet (EUV) lithography, the effects of radiation induced carbon contamination on the printing performance of patterned EUV masks. The impact of carbon contamination on EUV masks is significant due to the throughput loss and potential effects on imaging performance, and occurs when multilayer surfaces are exposed to EUV radiation with residual carbonaceous species present. Current carbon contamination research is primarily focused on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on …


Role Of Interface Band Structure On Hot Electron Transport, John J. Garramone 2011 University at Albany, State University of New York

Role Of Interface Band Structure On Hot Electron Transport, John J. Garramone

Legacy Theses & Dissertations (2009 - 2024)

Knowledge of electron transport through materials and interfaces is fundamentally and technologically important. For example, metal interconnects within integrated circuits suffer increasingly from electromigration and signal delay due to an increase in resistance from grain boundary and sidewall scattering since their dimensions are becoming shorter than the electron mean free path. Additionally, all semiconductor based devices require the transport of electrons through materials and interfaces where scattering and parallel momentum conservation are important. In this thesis, the inelastic and elastic scattering of hot electrons are studied in nanometer thick copper, silver and gold films deposited on silicon substrates. Hot electrons …


Extreme Ultraviolet Photoresists : Film Quantum Yields And Ler Of Thin Film Resists, Craig D. Higgins 2011 University at Albany, State University of New York

Extreme Ultraviolet Photoresists : Film Quantum Yields And Ler Of Thin Film Resists, Craig D. Higgins

Legacy Theses & Dissertations (2009 - 2024)

Extreme ultraviolet (EUV) is the leading candidate for a commercially viable solution for next generation lithography. The development of EUV chemically amplified photoresists and processes are critical to the future lithographic requirements of the microelectronics industry. To meet the necessary requirements for both integrated circuit (IC) specifications and cost, the resolution, line-edge roughness (LER) and sensitivity all need to be reduced. Unfortunately, a fundamental trade-off has been observed between these three crucial elements. We have predicted that the best way to obtain the required resolution, line-edge roughness and sensitivity (RLS) is to create more acid molecules per photon absorbed. This …


Electron-Phonon Interactions And Quantum Confinement Effects On Optical Transitions In Nanoscale Silicon Films, Vimal Kumar Kamineni 2011 University at Albany, State University of New York

Electron-Phonon Interactions And Quantum Confinement Effects On Optical Transitions In Nanoscale Silicon Films, Vimal Kumar Kamineni

Legacy Theses & Dissertations (2009 - 2024)

Theoretical studies have attributed the temperature dependence of the linear optical response (dielectric function) of bulk semiconductors to electron-phonon interactions and thermal expansion of the lattice. However, the role of phonons in the optical properties of nanoscale structures is often overlooked. This thesis systematically investigates the impact of both carrier confinement and electron-phonon interactions using nanoscale films of silicon in crystalline silicon quantum wells (c-Si QW). Spectroscopic ellipsometry (SE) is a linear optical technique used to of extract the dielectric function and thickness of very thin films. X-ray reflectivity (XRR) was used as the complementary thickness metrology method. The dielectric …


High-K Gate Stack On Compound Semiconductor Channel Materials For Low Power, High Performance Digital Logic Applications, Rama Kambhampati 2011 University at Albany, State University of New York

High-K Gate Stack On Compound Semiconductor Channel Materials For Low Power, High Performance Digital Logic Applications, Rama Kambhampati

Legacy Theses & Dissertations (2009 - 2024)

Group III-V compound semiconductors such as InGaAs and InGaSb are actively being considered as channel materials for low power, high performance digital logic applications due to superior carrier transport properties such as mobility and saturation velocity. The high density of interface states at high-k dielectric and III-V interface that results in pinning of Fermi level is one of the major challenges that need to be addressed before III-V CMOS becomes a mainstream technology.


Applying X-Ray Microscopy And Finite Element Modeling (Fem) To Identify The Mechanism Of Stress-Assisted Void Growth In Through Silicon Via (Tsv), Lay Wai Kong 2011 University at Albany, State University of New York

Applying X-Ray Microscopy And Finite Element Modeling (Fem) To Identify The Mechanism Of Stress-Assisted Void Growth In Through Silicon Via (Tsv), Lay Wai Kong

Legacy Theses & Dissertations (2009 - 2024)

Fabricating through-silicon vias (TSVs) is challenging, especially for conformally filled TSVs, often hampered by the seam line and void inside the TSVs. Stress-assisted void growth in TSVs has been studied by finite element stress modeling and X-ray computed tomography (XCT). Because X-ray imaging does not require TSVs to be physically cross-sectioned, the same TSV can be imaged before and after annealing. Using 8 keV laboratory-based XCT, voids formed during copper electroplating are observed in as-deposited samples and void growth is observed at the void location after annealing. We hypothesize that the mechanism generating voids is hydrostatic stress-assisted void growth. Stresses …


Optimization And Development Of Silicon-Based Semiconductor Devices Using Tcad, Changwoo Lee 2011 University at Albany, State University of New York

Optimization And Development Of Silicon-Based Semiconductor Devices Using Tcad, Changwoo Lee

Legacy Theses & Dissertations (2009 - 2024)

Computer simulation of the electrical and optical properties of semiconductor devices has been became as an essential tool for developing new device as well as for improving existing device. This presentation describes applications of physical device simulation: (1) design optimization of power MOSFET, which is single crystalline based silicon semiconductor device, for cryogenic temperature application and (2) two-dimensional device simulation of amorphous silicon based solar cell to develop novel photovoltaic device with high efficiency.


Synthesis, Processing And Characterization Of Silicon-Based Templated Nanowires, Jae Ho Lee 2011 University at Albany, State University of New York

Synthesis, Processing And Characterization Of Silicon-Based Templated Nanowires, Jae Ho Lee

Legacy Theses & Dissertations (2009 - 2024)

Semiconductor and metallic nanowires have attracted substantial attention due to their wide variety of applications, ranging from nanoelectronics to energy storage devices. In particular, self-assembled silicon nanowires (SiNWs) may be an attractive alternative to conventionally processed planar silicon since SiNWs can potentially function as both the switch (i.e. transistor) and local interconnect (e.g. metal silicide nanowire) to form an inherently integrated nanoelectronic system. Also, hierarchical (branched) nanowire systems hold potential for catalysts or porous electrode applications for energy applications


Investigation Of Novel Alumina Nanoabrasive And The Interactions With Basic Chemical Components In Copper Chemical Mechanical Planarization (Cmp) Slurries, Shravanthi Lakshmi Manikonda 2011 University at Albany, State University of New York

Investigation Of Novel Alumina Nanoabrasive And The Interactions With Basic Chemical Components In Copper Chemical Mechanical Planarization (Cmp) Slurries, Shravanthi Lakshmi Manikonda

Legacy Theses & Dissertations (2009 - 2024)

Chemical mechanical planarization (CMP) is an enabling process technology for IC fabrication to maintain global planarity across the wafer to satisfy lithographic depth of focus constraints. It also enables integration of materials that cannot be anisotropically etched, such as Cu. CMP utilizes nanoparticle abrasives in aqueous slurry to aid in planarization.


Applications Of Raman Spectroscopy For Silicon Stress Characterization In Integrated Circuits, Colin Mcdonough 2011 University at Albany, State University of New York

Applications Of Raman Spectroscopy For Silicon Stress Characterization In Integrated Circuits, Colin Mcdonough

Legacy Theses & Dissertations (2009 - 2024)

The introduction of mechanical stress in Si-based integrated circuits (ICs), whether desired or undesired, is intrinsic to IC fabrication. The origins are diverse and result from the numerous materials, geometries, and processes involved in fabrication. These stresses can lead to such effects as delamination, void formation and migration, and fracture, and can significantly affect device performance. As a result, stress development is a major concern for reliability, process control, and device design. It is necessary to investigate and characterize the origins and levels of the induced stresses. A more complete fundamental understanding of the evolution of stress in ICs and …


Effects Of Low Energy E-Beam Irradiation On Graphene And Graphene Field Effect Transistors And Raman Metrology Of Graphene On Split Gate Test Structures, Gayathri Rao 2011 University at Albany, State University of New York

Effects Of Low Energy E-Beam Irradiation On Graphene And Graphene Field Effect Transistors And Raman Metrology Of Graphene On Split Gate Test Structures, Gayathri Rao

Legacy Theses & Dissertations (2009 - 2024)

Apart from its compelling performance in conventional nanoelectronic device geometries, graphene is an appropriate candidate to study certain interesting phenomenon (e.g. the Veselago lens effect) predicted on the basis of its linear electron dispersion relation. A key requirement for the observation of such phenomenon in graphene and for its use in conventional field-effect transistor (FET) devices is the need to minimize defects such as consisting of - or resulting from - adsorbates and lattice non-uniformities, and reduce deleterious substrate effects. Consequently the investigation of the origin and interaction of defects in the graphene lattice is essential to improve and tailor …


Shape And Orientation Effects On The Ballistic Phonon Thermal Properties Of Ultra-Scaled Si Nanowires, Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck 2011 Purdue University

Shape And Orientation Effects On The Ballistic Phonon Thermal Properties Of Ultra-Scaled Si Nanowires, Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck

Birck and NCN Publications

The effect of geometrical confinement, atomic position and orientation of Silicon nanowires (SiNWs) on their thermal properties are investigated using the phonon dispersion obtained using a Modified Valence Force Field (MVFF) model. The spe- cific heat (Cv) and the ballistic thermal conductance (κbal) shows anisotropic variation l with changing cross-section shape and size of the SiNWs. The Cv increases with de- creasing cross-section size for all the wires. The triangular wires show the largest Cv due to their highest surface-to-volume ratio. The square wires with [110] orientation show the maximum κbal since they have the highest number of conducting phonon …


Nonuniformity In Lattice Contraction Of Bismuth Nanoclusters Heated Near Its Melting Point, A. Esmail, M. Abdel-Fattah, Hani E. Elsayed-Ali 2011 Old Dominion University

Nonuniformity In Lattice Contraction Of Bismuth Nanoclusters Heated Near Its Melting Point, A. Esmail, M. Abdel-Fattah, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The structural properties of bismuth nanoclusters were investigated with transmission high-energy electron diffraction from room temperature up to 525 ± 6 K. The Bi nanoclusters were fabricated by thermal evaporation at room temperature on transmission electron microscope grids coated with an ultrathin carbon film, followed by thermal and femtosecond laser annealing. The annealed sample had an average cluster size of ∼14 nm along the minor axis and ∼16 nm along the major axis. The Debye temperature of the annealed nanoclusters was found to be 53 ± 6 K along the [012] direction and 86 ± 9 K along the [110] …


Crystallite Phase And Orientation Determinations Of (Mn, Ga) As/Gaas-Crystallites Using Analyzed (Precession) Electron Diffraction Patterns, Ines Häusler, Stavros Nicolopoulos, Edgar F. Rauch, K. Volz, Peter Moeck 2011 Humboldt University of Berlin

Crystallite Phase And Orientation Determinations Of (Mn, Ga) As/Gaas-Crystallites Using Analyzed (Precession) Electron Diffraction Patterns, Ines Häusler, Stavros Nicolopoulos, Edgar F. Rauch, K. Volz, Peter Moeck

Physics Faculty Publications and Presentations

Outline of the presentation:

1. Material system: (Mn,Ga)As/GaAs-crystallites

2. Structure analysis using Nano-beam Diffraction (NBD) Precession Electron Diffraction Technique (PED) --> Structure type I + II

3. Phase and orientation mapping using ASTAR

4. Conclusion


Precise Control Of Highly Ordered Arrays Of Nested Semiconductor/Metal Nanotubes, Diefeng Gu, Helmut Baumgart, Kandabara Tapily, Pragya Shrestha, Gon Namkoong, Xianyu Ao, Frank Müller 2011 Old Dominion University

Precise Control Of Highly Ordered Arrays Of Nested Semiconductor/Metal Nanotubes, Diefeng Gu, Helmut Baumgart, Kandabara Tapily, Pragya Shrestha, Gon Namkoong, Xianyu Ao, Frank Müller

Electrical & Computer Engineering Faculty Publications

Lithographically defined microporous templates in conjunction with the atomic layer deposition (ALD) technique enable remarkable control of complex novel nested nanotube structures. So far three-dimensional control of physical process parameters has not been fully realized with high precision resolution, and requires optimization in order to achieve a wider range of potential applications. Furthermore, the combination of composite insulating oxide layers alternating with semiconducting layers and metals can provide various types of novel applications and eventually provide unique and advanced levels of multifunctional nanoscale devices. Semiconducting TiO2 nanotubes have potential applications in photovoltaic devices. The combination of nanostructured semiconducting materials …


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