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Articles 451 - 480 of 1689

Full-Text Articles in Engineering Physics

Calibration Of The Air Shower Energy Scale Of The Water And Air Cherenkov Techniques In The Lhaaso Experiment, F. Aharonian, Q. An, Axikegu, L. X. Bai, Y. X. Bai, Y. W. Bao, D. Bastieri, X. J. Bi, Y. J. Bi, H. Cai, J. T. Cai, Zhen Cao, Zhe Cao, J. Chang, J. F. Chang, B. M. Chen, E. S. Chen, J. Chen, Liang Chen, Liang Chen, Long Chen, M. J. Chen, M. L. Chen, Q. H. Chen, S. H. Chen, S. Z. Chen, T. L. Chen, X. L. Chen, Y. Chen, N. Cheng, Y. D. Cheng, S. W. Cui, X. H. Cui, Y. D. Cui, B. Z. Dai, H. L. Dai, Z. G. Dai, Danzen Gluobu, D. Della Volpe, B. D'Ettorre Piazzoli, X. J. Dong, K. K. Duan, J. H. Fan, Y. Z. Fan, Z. X. Fan, J. Fang, K. Fang, C. F. Feng, L. Feng, S. H. Feng, Y. L. Feng, B. Gao, C. D. Gao, L. Q. Gao, Q. Gao, W. Gao, M. M. Ge, L. S. Geng, G. H. Gong, Q. B. Gou, M. H. Gu, F. L. Guo, J. G. Guo, X. L. Guo, Y. Q. Guo, Y. Y. Guo, Y. A. Han, H. H. He, H. N. He, J. C. He, S. L. He, X. B. He, Y. He, M. Heller, Y. K. Hor, C. Hou, H. B. Hu, S. Hu, S. C. Hu, X. J. Hu, D. H. Huang, Q. L. Huang, W. H. Huang, X. T. Huang, X. Y. Huang, Z. C. Huang, F. Ji, X. L. Ji, H. Y. Jia, K. Jiang, Z. J. Jiang, C. Jin, T. Ke, D. Kuleshov, K. Levochkin, B. B. Li, Cong Li, Cheng Li, F. Li, H. B. Li, H. C. Li, H. Y. Li, J. Li, K. Li, W. L. Li, Xin Li, Xin Li, X. R. Li, Y. Li, Y. Z. Li, Zhe Li, Zhuo Li, E. W. Liang, Y. F. Liang, S. J. Lin, B. Liu, C. Liu, D. Liu, H. Liu, H. D. Liu, J. Liu, J. L. Liu, J. S. Liu, J. Y. Liu, M. Y. Liu, R. Y. Liu, S. M. Liu, W. Liu, Y. Liu, Y. N. Liu, Z. X. Liu, W. J. Long, R. Lu, H. K. Lv, B. Q. Ma, L. L. Ma, X. H. Ma, J. R. Mao, A. Masood, Z. Min, W. Mitthumsiri, T. Montaruli, Y. C. Nan, B. Y. Pang, P. Pattarakijwanich, Z. Y. Pei, M. Y. Qi, Y. Q. Qi, B. Q. Qiao, J. J. Qin, D. Ruffolo, V. Rulev, A. Saiz, L. Shao, O. Shchegolev, X. D. Sheng, J. Y. Shi, H. C. Song, Yu. V. Stenkin, V. Stepanov, Y. Su, Q. N. Sun, X. N. Sun, Z. B. Sun, P. H. T. Tam, Z. B. Tang, W. W. Tian, B. D. Wang, C. Wang, H. Wang, H. G. Wang, J. C. Wang, J. S. Wang, L. P. Wang, L. Y. Wang, R. N. Wang, W. Wang, X. G. Wang, Xiaojie Wang, X. Y. Wang, Y. Wang, Y. D. Wang, Y. J. Wang, Y. P. Wang, Z. H. Wang, Z. X. Wang, Zhen Wang, Zheng Wang, D. M. Wei, J. J. Wei, Y. J. Wei, T. Wen, C. Y. Wu, H. R. Wu, S. Wu, W. X. Wu, X. F. Wu, S. Q. Xi, J. Xia, J. J. Xia, G. M. Xiang, D. X. Xiao, G. Xiao, H. B. Xiao, G. G. Xin, Y. L. Xin, Y. Xing, D. L. Xu, R. X. Xu, L. Xue, D. H. Yan, J. Z. Yan, C. W. Yang, F. F. Yang, J. Y. Yang, L. L. Yang, M. J. Yang, R. Z. Yang, S. B. Yang, Y. H. Yao, Z. G. Yao, Y. M. Ye, L. Q. Yin, N. Yin, X. H. You, Y. H. Yu, Q. Yuan, H. D. Zeng, T. X. Zeng, W. Zeng, Z. K. Zeng, M. Zha, X. X. Zhai, B. B. Zhang, H. M. Zhang, H. Y. Zhang, J. L. Zhang, J. W. Zhang, Lu Zhang, Li Zhang, L. X. Zhang, P. F. Zhang, R. Zhang, S. R. Zhang, S. S. Zhang, X. Zhang, X. P. Zhang, Y. F. Zhang, Y. L. Zhang, Yong Zhang, Yi Zhang, B. Zhao, J. Zhao, L. Zhao, L. Z. Zhao, S. P. Zhao, F. Zheng, Y. Zheng, B. Zhou, H. Zhou, J. N. Zhou, P. Zhou, R. Zhou, X. X. Zhou, C. G. Zhu, F. R. Zhu, H. Zhu, K. J. Zhu, X. Zuo Sep 2021

Calibration Of The Air Shower Energy Scale Of The Water And Air Cherenkov Techniques In The Lhaaso Experiment, F. Aharonian, Q. An, Axikegu, L. X. Bai, Y. X. Bai, Y. W. Bao, D. Bastieri, X. J. Bi, Y. J. Bi, H. Cai, J. T. Cai, Zhen Cao, Zhe Cao, J. Chang, J. F. Chang, B. M. Chen, E. S. Chen, J. Chen, Liang Chen, Liang Chen, Long Chen, M. J. Chen, M. L. Chen, Q. H. Chen, S. H. Chen, S. Z. Chen, T. L. Chen, X. L. Chen, Y. Chen, N. Cheng, Y. D. Cheng, S. W. Cui, X. H. Cui, Y. D. Cui, B. Z. Dai, H. L. Dai, Z. G. Dai, Danzen Gluobu, D. Della Volpe, B. D'Ettorre Piazzoli, X. J. Dong, K. K. Duan, J. H. Fan, Y. Z. Fan, Z. X. Fan, J. Fang, K. Fang, C. F. Feng, L. Feng, S. H. Feng, Y. L. Feng, B. Gao, C. D. Gao, L. Q. Gao, Q. Gao, W. Gao, M. M. Ge, L. S. Geng, G. H. Gong, Q. B. Gou, M. H. Gu, F. L. Guo, J. G. Guo, X. L. Guo, Y. Q. Guo, Y. Y. Guo, Y. A. Han, H. H. He, H. N. He, J. C. He, S. L. He, X. B. He, Y. He, M. Heller, Y. K. Hor, C. Hou, H. B. Hu, S. Hu, S. C. Hu, X. J. Hu, D. H. Huang, Q. L. Huang, W. H. Huang, X. T. Huang, X. Y. Huang, Z. C. Huang, F. Ji, X. L. Ji, H. Y. Jia, K. Jiang, Z. J. Jiang, C. Jin, T. Ke, D. Kuleshov, K. Levochkin, B. B. Li, Cong Li, Cheng Li, F. Li, H. B. Li, H. C. Li, H. Y. Li, J. Li, K. Li, W. L. Li, Xin Li, Xin Li, X. R. Li, Y. Li, Y. Z. Li, Zhe Li, Zhuo Li, E. W. Liang, Y. F. Liang, S. J. Lin, B. Liu, C. Liu, D. Liu, H. Liu, H. D. Liu, J. Liu, J. L. Liu, J. S. Liu, J. Y. Liu, M. Y. Liu, R. Y. Liu, S. M. Liu, W. Liu, Y. Liu, Y. N. Liu, Z. X. Liu, W. J. Long, R. Lu, H. K. Lv, B. Q. Ma, L. L. Ma, X. H. Ma, J. R. Mao, A. Masood, Z. Min, W. Mitthumsiri, T. Montaruli, Y. C. Nan, B. Y. Pang, P. Pattarakijwanich, Z. Y. Pei, M. Y. Qi, Y. Q. Qi, B. Q. Qiao, J. J. Qin, D. Ruffolo, V. Rulev, A. Saiz, L. Shao, O. Shchegolev, X. D. Sheng, J. Y. Shi, H. C. Song, Yu. V. Stenkin, V. Stepanov, Y. Su, Q. N. Sun, X. N. Sun, Z. B. Sun, P. H. T. Tam, Z. B. Tang, W. W. Tian, B. D. Wang, C. Wang, H. Wang, H. G. Wang, J. C. Wang, J. S. Wang, L. P. Wang, L. Y. Wang, R. N. Wang, W. Wang, X. G. Wang, Xiaojie Wang, X. Y. Wang, Y. Wang, Y. D. Wang, Y. J. Wang, Y. P. Wang, Z. H. Wang, Z. X. Wang, Zhen Wang, Zheng Wang, D. M. Wei, J. J. Wei, Y. J. Wei, T. Wen, C. Y. Wu, H. R. Wu, S. Wu, W. X. Wu, X. F. Wu, S. Q. Xi, J. Xia, J. J. Xia, G. M. Xiang, D. X. Xiao, G. Xiao, H. B. Xiao, G. G. Xin, Y. L. Xin, Y. Xing, D. L. Xu, R. X. Xu, L. Xue, D. H. Yan, J. Z. Yan, C. W. Yang, F. F. Yang, J. Y. Yang, L. L. Yang, M. J. Yang, R. Z. Yang, S. B. Yang, Y. H. Yao, Z. G. Yao, Y. M. Ye, L. Q. Yin, N. Yin, X. H. You, Y. H. Yu, Q. Yuan, H. D. Zeng, T. X. Zeng, W. Zeng, Z. K. Zeng, M. Zha, X. X. Zhai, B. B. Zhang, H. M. Zhang, H. Y. Zhang, J. L. Zhang, J. W. Zhang, Lu Zhang, Li Zhang, L. X. Zhang, P. F. Zhang, R. Zhang, S. R. Zhang, S. S. Zhang, X. Zhang, X. P. Zhang, Y. F. Zhang, Y. L. Zhang, Yong Zhang, Yi Zhang, B. Zhao, J. Zhao, L. Zhao, L. Z. Zhao, S. P. Zhao, F. Zheng, Y. Zheng, B. Zhou, H. Zhou, J. N. Zhou, P. Zhou, R. Zhou, X. X. Zhou, C. G. Zhu, F. R. Zhu, H. Zhu, K. J. Zhu, X. Zuo

Physics Faculty Research & Creative Works

The Wide Field-of-View Cherenkov Telescope Array (WFCTA) and the Water Cherenkov Detector Array (WCDA) of LHAASO are designed to work in combination for measuring the energy spectra of the cosmic ray species over a very wide energy range from a few TeV to 10 PeV. The energy calibration can be achieved with a proven technique of measuring the westward shift of the Moon shadow cast by galactic cosmic rays due to the geomagnetic field. This deflection angle Δ is inversely proportional to the cosmic ray rigidity. The precise measurement of the shifts by WCDA allows us to calibrate its energy …


High Speed Impact On Graphene Composites, Giovanny A. Espitia Aug 2021

High Speed Impact On Graphene Composites, Giovanny A. Espitia

Symposium of Student Scholars

Since the isolation of Graphene occurred in 2004, numerous studies attempting to exploit the properties of this carbon allotrope have been conducted. Graphene exists in a 2-D manner with sp2 bonds, which provides the allotrope with great electrical, conductive, and mechanical properties. In this paper however, we will focus on the latter in order to examine the feasibility of graphene composites for bulletproof material in the military. Pure graphene sheets count with high porosity density that leads to structural defects as well as poor mechanical properties due to physical contact being sole retainer. For this reason, the selected composite is …


Discovery Of A New Gamma-Ray Source, Lhaaso J0341+5258, With Emission Up To 200 Tev, Zhen Cao, F. Aharonian, Q. An, Axikegu, L. X. Bai, Y. X. Bai, Y. W. Bao, D. Bastieri, X. J. Bi, Y. J. Bi, H. Cai, J. T. Cai, Zhe Cao, J. Chang, J. F. Chang, B. M. Chen, E. S. Chen, J. Chen, Liang Chen, Liang Chen, Long Chen, M. J. Chen, M. L. Chen, Q. H. Chen, S. H. Chen, S. Z. Chen, T. L. Chen, X. L. Chen, Y. Chen, N. Cheng, Y. D. Cheng, S. W. Cui, X. H. Cui, Y. D. Cui, B. D'Ettore Piazzoli, B. Z. Dai, H. L. Dai, Z. G. Dai, Danzen Gluobu, D. Della Volpe, X. J. Dong, K. K. Duan, J. H. Fan, Y. Z. Fan, Z. X. Fan, J. Fang, K. Fang, C. F. Feng, L. Feng, S. H. Feng, Y. L. Feng, B. Gao, C. D. Gao, L. Q. Gao, Q. Gao, W. Gao, M. M. Ge, L. S. Geng, G. H. Gong, Q. B. Gou, M. H. Gu, F. L. Guo, J. G. Guo, X. L. Guo, Y. Q. Guo, Y. Y. Guo, Y. A. Han, H. H. He, H. N. He, J. C. He, S. L. He, X. B. He, Y. He, M. Heller, Y. K. Hor, C. Hou, H. B. Hu, S. Hu, S. C. Hu, X. J. Hu, D. H. Huang, Q. L. Huang, W. H. Huang, X. T. Huang, X. Y. Huang, Z. C. Huang, F. Ji, X. L. Ji, H. Y. Jia, K. Jiang, Z. J. Jiang, C. Jin, T. Ke, D. Kuleshov, K. Levochkin, B. B. Li, Cheng Li, Cong Li, F. Li, H. B. Li, H. C. Li, H. Y. Li, J. Li, K. Li, W. L. Li, X. R. Li, Xin Li, Xin Li, Y. Li, Y. Z. Li, Zhe Li, Zhuo Li, E. W. Liang, Y. F. Liang, S. J. Lin, B. Liu, C. Liu, D. Liu, H. Liu, H. D. Liu, J. Liu, J. L. Liu, J. S. Liu, J. Y. Liu, M. Y. Liu, R. Y. Liu, S. M. Liu, W. Liu, Y. Liu, Y. N. Liu, Z. X. Liu, W. J. Long, R. Lu, H. K. Lv, B. Q. Ma, L. L. Ma, X. H. Ma, J. R. Mao, A. Masood, Z. Min, W. Mitthumsiri, T. Montaruli, Y. C. Nan, B. Y. Pang, P. Pattarakijwanich, Z. Y. Pei, M. Y. Qi, Y. Q. Qi, B. Q. Qiao, J. J. Qin, D. Ruffolo, V. Rulev, A. Saiz, L. Shao, O. Shchegolev, X. D. Sheng, J. Y. Shi, H. C. Song, Yu. V. Stenkin, V. Stepanov, Y. Su, Q. N. Sun, X. N. Sun, Z. B. Sun, P. H. T. Tam, Z. B. Tang, W. W. Tian, B. D. Wang, C. Wang, H. Wang, H. G. Wang, J. C. Wang, J. S. Wang, L. P. Wang, L. Y. Wang, R. N. Wang, W. Wang, W. Wang, X. G. Wang, Xiaojie Wang, X. Y. Wang, Y. Wang, Y. D. Wang, Y. J. Wang, Y. P. Wang, Z. H. Wang, Z. X. Wang, Zhen Wang, Zheng Wang, D. M. Wei, J. J. Wei, Y. J. Wei, T. Wen, C. Y. Wu, H. R. Wu, S. Wu, W. X. Wu, X. F. Wu, S. Q. Xi, J. Xia, J. J. Xia, G. M. Xiang, D. X. Xiao, G. Xiao, H. B. Xiao, G. G. Xin, Y. L. Xin, Y. Xing, D. L. Xu, R. X. Xu, L. Xue, D. H. Yan, J. Z. Yan, C. W. Yang, F. F. Yang, J. Y. Yang, L. L. Yang, M. J. Yang, R. Z. Yang, S. B. Yang, Y. H. Yao, Z. G. Yao, Y. M. Ye, L. Q. Yin, N. Yin, X. H. You, Z. Y. You, Y. H. Yu, Q. Yuan, H. D. Zeng, T. X. Zeng, W. Zeng, Z. K. Zeng, M. Zha, X. X. Zha, B. B. Zhang, H. M. Zhang, H. Y. Zhang, J. L. Zhang, J. W. Zhang, L. X. Zhang, Li Zhang, Lu Zhang, P. F. Zhang, P. P. Zhang, R. Zhang, S. R. Zhang, S. S. Zhang, X. Zhang, X. P. Zhang, Y. F. Zhang, Y. L. Zhang, Yi Zhang, Yong Zhang, B. Zhao, J. Zhao, L. Zhao, L. Z. Zhao, S. P. Zhao, F. Zheng, Y. Zheng, B. Zhou, H. Zhou, J. N. Zhou, P. Zhou, R. Zhou, X. X. Zhou, C. G. Zhu, F. R. Zhu, H. Zhu, K. J. Zhu, X. Zuo Aug 2021

Discovery Of A New Gamma-Ray Source, Lhaaso J0341+5258, With Emission Up To 200 Tev, Zhen Cao, F. Aharonian, Q. An, Axikegu, L. X. Bai, Y. X. Bai, Y. W. Bao, D. Bastieri, X. J. Bi, Y. J. Bi, H. Cai, J. T. Cai, Zhe Cao, J. Chang, J. F. Chang, B. M. Chen, E. S. Chen, J. Chen, Liang Chen, Liang Chen, Long Chen, M. J. Chen, M. L. Chen, Q. H. Chen, S. H. Chen, S. Z. Chen, T. L. Chen, X. L. Chen, Y. Chen, N. Cheng, Y. D. Cheng, S. W. Cui, X. H. Cui, Y. D. Cui, B. D'Ettore Piazzoli, B. Z. Dai, H. L. Dai, Z. G. Dai, Danzen Gluobu, D. Della Volpe, X. J. Dong, K. K. Duan, J. H. Fan, Y. Z. Fan, Z. X. Fan, J. Fang, K. Fang, C. F. Feng, L. Feng, S. H. Feng, Y. L. Feng, B. Gao, C. D. Gao, L. Q. Gao, Q. Gao, W. Gao, M. M. Ge, L. S. Geng, G. H. Gong, Q. B. Gou, M. H. Gu, F. L. Guo, J. G. Guo, X. L. Guo, Y. Q. Guo, Y. Y. Guo, Y. A. Han, H. H. He, H. N. He, J. C. He, S. L. He, X. B. He, Y. He, M. Heller, Y. K. Hor, C. Hou, H. B. Hu, S. Hu, S. C. Hu, X. J. Hu, D. H. Huang, Q. L. Huang, W. H. Huang, X. T. Huang, X. Y. Huang, Z. C. Huang, F. Ji, X. L. Ji, H. Y. Jia, K. Jiang, Z. J. Jiang, C. Jin, T. Ke, D. Kuleshov, K. Levochkin, B. B. Li, Cheng Li, Cong Li, F. Li, H. B. Li, H. C. Li, H. Y. Li, J. Li, K. Li, W. L. Li, X. R. Li, Xin Li, Xin Li, Y. Li, Y. Z. Li, Zhe Li, Zhuo Li, E. W. Liang, Y. F. Liang, S. J. Lin, B. Liu, C. Liu, D. Liu, H. Liu, H. D. Liu, J. Liu, J. L. Liu, J. S. Liu, J. Y. Liu, M. Y. Liu, R. Y. Liu, S. M. Liu, W. Liu, Y. Liu, Y. N. Liu, Z. X. Liu, W. J. Long, R. Lu, H. K. Lv, B. Q. Ma, L. L. Ma, X. H. Ma, J. R. Mao, A. Masood, Z. Min, W. Mitthumsiri, T. Montaruli, Y. C. Nan, B. Y. Pang, P. Pattarakijwanich, Z. Y. Pei, M. Y. Qi, Y. Q. Qi, B. Q. Qiao, J. J. Qin, D. Ruffolo, V. Rulev, A. Saiz, L. Shao, O. Shchegolev, X. D. Sheng, J. Y. Shi, H. C. Song, Yu. V. Stenkin, V. Stepanov, Y. Su, Q. N. Sun, X. N. Sun, Z. B. Sun, P. H. T. Tam, Z. B. Tang, W. W. Tian, B. D. Wang, C. Wang, H. Wang, H. G. Wang, J. C. Wang, J. S. Wang, L. P. Wang, L. Y. Wang, R. N. Wang, W. Wang, W. Wang, X. G. Wang, Xiaojie Wang, X. Y. Wang, Y. Wang, Y. D. Wang, Y. J. Wang, Y. P. Wang, Z. H. Wang, Z. X. Wang, Zhen Wang, Zheng Wang, D. M. Wei, J. J. Wei, Y. J. Wei, T. Wen, C. Y. Wu, H. R. Wu, S. Wu, W. X. Wu, X. F. Wu, S. Q. Xi, J. Xia, J. J. Xia, G. M. Xiang, D. X. Xiao, G. Xiao, H. B. Xiao, G. G. Xin, Y. L. Xin, Y. Xing, D. L. Xu, R. X. Xu, L. Xue, D. H. Yan, J. Z. Yan, C. W. Yang, F. F. Yang, J. Y. Yang, L. L. Yang, M. J. Yang, R. Z. Yang, S. B. Yang, Y. H. Yao, Z. G. Yao, Y. M. Ye, L. Q. Yin, N. Yin, X. H. You, Z. Y. You, Y. H. Yu, Q. Yuan, H. D. Zeng, T. X. Zeng, W. Zeng, Z. K. Zeng, M. Zha, X. X. Zha, B. B. Zhang, H. M. Zhang, H. Y. Zhang, J. L. Zhang, J. W. Zhang, L. X. Zhang, Li Zhang, Lu Zhang, P. F. Zhang, P. P. Zhang, R. Zhang, S. R. Zhang, S. S. Zhang, X. Zhang, X. P. Zhang, Y. F. Zhang, Y. L. Zhang, Yi Zhang, Yong Zhang, B. Zhao, J. Zhao, L. Zhao, L. Z. Zhao, S. P. Zhao, F. Zheng, Y. Zheng, B. Zhou, H. Zhou, J. N. Zhou, P. Zhou, R. Zhou, X. X. Zhou, C. G. Zhu, F. R. Zhu, H. Zhu, K. J. Zhu, X. Zuo

Physics Faculty Research & Creative Works

We report the discovery of a new unidentified extended γ-ray source in the Galactic plane named LHAASO J0341+5258 with a pretrial significance of 8.2 standard deviations above 25 TeV. The best-fit position is R.A. = 55. 34 0. 11 and decl. = 52. 97 0. 07. The angular size of LHAASO J0341+5258 is 0. 29 0. 06stat 0. 02sys. The flux above 25 TeV is about 20% of the flux of the Crab Nebula. Although a power-law fit of the spectrum from 10 to 200 TeV with the photon index α = 2.98 0.19stat 0.02sys is not excluded, the LHAASO …


Photoluminescence Spectra Of Silicon Doped With Cadmium, N A. Sultanov, E T. Rakhimov, Z Mirzajonov, F T. Yusupov Aug 2021

Photoluminescence Spectra Of Silicon Doped With Cadmium, N A. Sultanov, E T. Rakhimov, Z Mirzajonov, F T. Yusupov

Scientific-technical journal

Cadmium and zinc, as transition metals, are deep-level impurities (DL) and have a significant effect on the electrical, photoelectric, recombination, and other properties of semiconductor crystals.This paper presents the results of experimental studies of the optical and electrical properties of silicon crystals containing impurity atoms of cadmium and zinc using DLTS and low-temperature photoluminescence (PL).


Infinite Peirce Distribution In The Algebra Of Compact Operators And Description Of Its Local Au-Tomorphisms, Farhodjon N. Arzikulov, Rejabboy Qo’Shaqov Jul 2021

Infinite Peirce Distribution In The Algebra Of Compact Operators And Description Of Its Local Au-Tomorphisms, Farhodjon N. Arzikulov, Rejabboy Qo’Shaqov

Scientific Bulletin. Physical and Mathematical Research

In the present paper the infinite Peirce decomposition of the algebra 𝐾(𝐻) of com-pact operators on an infinite dimensional separable Gilbert space 𝐻 is constructed, using the norm of the algebra 𝐾(𝐻) and a maximal family of mutually or-thogonal minimal projections, i.e., self-adjoint,idempotent elements. The infinite Peirce decompo-sition on the norm of a 𝐶∗-algebra is also con-structed in 2012 by the first author. But, it turns, the condition, applied then, is not sufficient for the infi-nite Peirce decomposition on the norm constructed in 2012 to be an algebra. Therefore, in the present paper, the infinite Peirce decomposition on the norm …


Structural And Electronic Properties Of Few-Layer Monochalcogenides, Brandon Joel Miller Jul 2021

Structural And Electronic Properties Of Few-Layer Monochalcogenides, Brandon Joel Miller

Graduate Theses and Dissertations

This work discusses a new class of materials with novel properties that have only recently begun being studied. These materials are two-dimensional group IV-VI monochalcogenides, so named because they are formed from group IV (carbon group) and group VI (chalcogens) elements. These materials display several interesting physical properties such as ferroelasticity and ferroelectricity, and the contents within Chapters Two, Three, and Four concern a collaborative effort between theory and experiment between our group at the University of Arkansas and Dr. Kai Chang at the Max Planck Institute of Microstructure Physics in Halle, Germany in studying these properties. This thesis is …


Construction And On-Site Performance Of The Lhaaso Wfcta Camera, F. Aharonian, Q. An, Axikegu, L. X. Bai, Y. X. Bai, Y. W. Bao, D. Bastieri, X. J. Bi, Y. J. Bi, H. Cai, J. T. Cai, Z. Cao, Z. Cao, J. Chang, J. F. Chang, X. C. Chang, B. M. Chen, J. Chen, L. Chen, L. Chen, L. Chen, M. J. Chen, M. L. Chen, Q. H. Chen, S. H. Chen, S. Z. Chen, T. L. Chen, X. L. Chen, Y. Chen, N. Cheng, Y. D. Cheng, S. W. Cui, X. H. Cui, Y. D. Cui, B. Z. Dai, H. L. Dai, Z. G. Dai, Danzen Gluobu, D. Della Volpe, B. D'Ettore Piazzoli, X. J. Dong, J. H. Fan, Y. Z. Fan, Z. X. Fan, J. Fang, K. Fang, C. F. Feng, L. Feng, S. H. Feng, Y. L. Feng, B. Gao, C. D. Gao, Q. Gao, M. M. Ge, L. S. Geng, G. H. Gong, Q. B. Gou, M. H. Gu, J. G. Guo, X. L. Guo, Y. Q. Guo, Y. Y. Guo, Y. A. Han, H. H. He, H. N. He, J. C. He, S. L. He, X. B. He, Y. He, M. Heller, Y. K. Hor, C. Hou, X. Hou, H. B. Hu, S. Hu, S. C. Hu, X. J. Hu, D. H. Huang, Q. L. Huang, W. H. Huang, X. T. Huang, Z. C. Huang, F. Ji, X. L. Ji, H. Y. Jia, K. Jiang, Z. J. Huang, C. Jin, D. Kuleshov, K. Levochkin, B. B. Li, C. Li, C. Li, F. Li, H. B. Li, H. C. Li, H. Y. Li, J. Li, K. Li, W. L. Li, X. Li, X. Li, X. R. Li, Y. Li, Y. Z. Li, Z. Li, Z. Li, E. W. Liang, Y. F. Liang, S. J. Lin, B. Liu, C. Liu, D. Liu, H. Liu, H. D. Liu, J. Liu, J. L. Liu, M. Y. Liu, R. Y. Liu, S. M. Liu, W. Liu, Y. N. Liu, Z. X. Liu, W. J. Long, R. Lu, H. K. Lv, B. Q. Ma, L. L. Ma, X. H. Ma, J. R. Mao, A. Masood, W. Mitthumsiri, T. Montaruli, Y. C. Nan, B. Y. Pang, P. Pattarakijwanich, Z. Y. Pei, M. Y. Qi, D. Ruffolo, V. Rulev, A. Saiz, L. Shao, O. Shchegolev, X. D. Sheng, J. R. Shi, H. C. Song, Yu. V. Stenkin, V. Stepanov, Q. N. Sun, X. N. Sun, Z. B. Sun, P. H. T. Tam, Z. B. Tang, W. W. Tian, B. D. Wang, C. Wang, H. Wang, H. G. Wang, J. C. Wang, J. S. Wang, L. P. Wang, L. Y. Wang, R. N. Wang, W. Wang, W. Wang, X. G. Wang, Xiaojie Wang, X. Y. Wang, Y. D. Wang, Y. J. Wang, Y. P. Wang, Z. Wang, Z. Wang, Z. H. Wang, Z. X. Wang, D. M. Wei, J. J. Wei, Y. J. Wei, T. Wen, C. Y. Wu, H. R. Wu, S. Wu, W. X. Wu, X. F. Wu, S. Q. Xi, J. Xia, J. J. Xia, G. M. Xiang, G. Xiao, H. B. Xiao, G. G. Xin, Y. L. Xin, Y. Xing, D. L. Xu, R. X. Xu, L. Xue, D. H. Yan, C. W. Yang, F. F. Yang, J. Y. Yang, L. L. Yang, M. J. Yang, R. Z. Yang, S. B. Yang, Y. H. Yao, Z. G. Yao, Y. M. Ye, L. Q. Yin, N. Yin, X. H. You, Z. Y. You, Y. H. Yu, Q. Yuan, H. D. Zeng, T. X. Zeng, W. Zeng, Z. K. Zeng, M. Zha, X. X. Zhai, B. B. Zhang, H. M. Zhang, H. Y. Zhang, J. L. Zhang, J. W. Zhang, L. Zhang, L. Zhang, L. X. Zhang, P. F. Zhang, P. P. Zhang, R. Zhang, S. R. Zhang, S. S. Zhang, X. Zhang, X. P. Zhang, Y. Zhang, Y. Zhang, Y. F. Zhang, Y. L. Zhang, B. Zhao, J. Zhao, L. Zhao, L. Z. Zhao, S. P. Zhao, F. Zheng, Y. Zheng, B. Zhou, H. Zhou, J. N. Zhou, P. Zhou, R. Zhou, X. X. Zhou, C. G. Zhu, F. R. Zhu, H. Zhu, K. J. Zhu, X. Zuo Jul 2021

Construction And On-Site Performance Of The Lhaaso Wfcta Camera, F. Aharonian, Q. An, Axikegu, L. X. Bai, Y. X. Bai, Y. W. Bao, D. Bastieri, X. J. Bi, Y. J. Bi, H. Cai, J. T. Cai, Z. Cao, Z. Cao, J. Chang, J. F. Chang, X. C. Chang, B. M. Chen, J. Chen, L. Chen, L. Chen, L. Chen, M. J. Chen, M. L. Chen, Q. H. Chen, S. H. Chen, S. Z. Chen, T. L. Chen, X. L. Chen, Y. Chen, N. Cheng, Y. D. Cheng, S. W. Cui, X. H. Cui, Y. D. Cui, B. Z. Dai, H. L. Dai, Z. G. Dai, Danzen Gluobu, D. Della Volpe, B. D'Ettore Piazzoli, X. J. Dong, J. H. Fan, Y. Z. Fan, Z. X. Fan, J. Fang, K. Fang, C. F. Feng, L. Feng, S. H. Feng, Y. L. Feng, B. Gao, C. D. Gao, Q. Gao, M. M. Ge, L. S. Geng, G. H. Gong, Q. B. Gou, M. H. Gu, J. G. Guo, X. L. Guo, Y. Q. Guo, Y. Y. Guo, Y. A. Han, H. H. He, H. N. He, J. C. He, S. L. He, X. B. He, Y. He, M. Heller, Y. K. Hor, C. Hou, X. Hou, H. B. Hu, S. Hu, S. C. Hu, X. J. Hu, D. H. Huang, Q. L. Huang, W. H. Huang, X. T. Huang, Z. C. Huang, F. Ji, X. L. Ji, H. Y. Jia, K. Jiang, Z. J. Huang, C. Jin, D. Kuleshov, K. Levochkin, B. B. Li, C. Li, C. Li, F. Li, H. B. Li, H. C. Li, H. Y. Li, J. Li, K. Li, W. L. Li, X. Li, X. Li, X. R. Li, Y. Li, Y. Z. Li, Z. Li, Z. Li, E. W. Liang, Y. F. Liang, S. J. Lin, B. Liu, C. Liu, D. Liu, H. Liu, H. D. Liu, J. Liu, J. L. Liu, M. Y. Liu, R. Y. Liu, S. M. Liu, W. Liu, Y. N. Liu, Z. X. Liu, W. J. Long, R. Lu, H. K. Lv, B. Q. Ma, L. L. Ma, X. H. Ma, J. R. Mao, A. Masood, W. Mitthumsiri, T. Montaruli, Y. C. Nan, B. Y. Pang, P. Pattarakijwanich, Z. Y. Pei, M. Y. Qi, D. Ruffolo, V. Rulev, A. Saiz, L. Shao, O. Shchegolev, X. D. Sheng, J. R. Shi, H. C. Song, Yu. V. Stenkin, V. Stepanov, Q. N. Sun, X. N. Sun, Z. B. Sun, P. H. T. Tam, Z. B. Tang, W. W. Tian, B. D. Wang, C. Wang, H. Wang, H. G. Wang, J. C. Wang, J. S. Wang, L. P. Wang, L. Y. Wang, R. N. Wang, W. Wang, W. Wang, X. G. Wang, Xiaojie Wang, X. Y. Wang, Y. D. Wang, Y. J. Wang, Y. P. Wang, Z. Wang, Z. Wang, Z. H. Wang, Z. X. Wang, D. M. Wei, J. J. Wei, Y. J. Wei, T. Wen, C. Y. Wu, H. R. Wu, S. Wu, W. X. Wu, X. F. Wu, S. Q. Xi, J. Xia, J. J. Xia, G. M. Xiang, G. Xiao, H. B. Xiao, G. G. Xin, Y. L. Xin, Y. Xing, D. L. Xu, R. X. Xu, L. Xue, D. H. Yan, C. W. Yang, F. F. Yang, J. Y. Yang, L. L. Yang, M. J. Yang, R. Z. Yang, S. B. Yang, Y. H. Yao, Z. G. Yao, Y. M. Ye, L. Q. Yin, N. Yin, X. H. You, Z. Y. You, Y. H. Yu, Q. Yuan, H. D. Zeng, T. X. Zeng, W. Zeng, Z. K. Zeng, M. Zha, X. X. Zhai, B. B. Zhang, H. M. Zhang, H. Y. Zhang, J. L. Zhang, J. W. Zhang, L. Zhang, L. Zhang, L. X. Zhang, P. F. Zhang, P. P. Zhang, R. Zhang, S. R. Zhang, S. S. Zhang, X. Zhang, X. P. Zhang, Y. Zhang, Y. Zhang, Y. F. Zhang, Y. L. Zhang, B. Zhao, J. Zhao, L. Zhao, L. Z. Zhao, S. P. Zhao, F. Zheng, Y. Zheng, B. Zhou, H. Zhou, J. N. Zhou, P. Zhou, R. Zhou, X. X. Zhou, C. G. Zhu, F. R. Zhu, H. Zhu, K. J. Zhu, X. Zuo

Physics Faculty Research & Creative Works

The focal plane camera is the core component of the Wide Field-of-view Cherenkov/fluorescence Telescope Array (WFCTA) of the Large High-Altitude Air Shower Observatory (LHAASO). Because of the capability of working under moonlight without aging, silicon photomultipliers (SiPM) have been proven to be not only an alternative but also an improvement to conventional photomultiplier tubes (PMT) in this application. Eighteen SiPM-based cameras with square light funnels have been built for WFCTA. The telescopes have collected more than 100 million cosmic ray events and preliminary results indicate that these cameras are capable of working under moonlight. The characteristics of the light funnels …


Computational Modeling Of Black Phosphorus Terahertz Photoconductive Antennas Using Comsol Multiphysics With Experimental Comparison Against A Commercial Lt-Gaas Emitter, Jose Isaac Santos Batista Jul 2021

Computational Modeling Of Black Phosphorus Terahertz Photoconductive Antennas Using Comsol Multiphysics With Experimental Comparison Against A Commercial Lt-Gaas Emitter, Jose Isaac Santos Batista

Graduate Theses and Dissertations

This thesis presents computational models of terahertz (THz) photoconductive antenna (PCA) emitter using COMSOL Multiphysics commercial package. A comparison of the computer simulated radiated THz signal against that of an experimentally measured signal of commercial reference LT-GaAs emitter is presented. The two-dimensional model (2D) aimed at calculating the photoconductivity of a black phosphorus (BP) PCA at two laser wavelengths of 780 nm and 1560 nm. The 2D model was applied to the BP PCA emitter and the LT-GaAs devices to compare their simulated performance in terms of the photocurrent and radiated THz signal pulse. The results showed better performance of …


Effect Of Excess Tellurium And Lead On Defor-Mation - Characteristics Of Polycrystalline Pbte Films, Yu.Yu. Vaitkus, Otajonov Salimjon Jun 2021

Effect Of Excess Tellurium And Lead On Defor-Mation - Characteristics Of Polycrystalline Pbte Films, Yu.Yu. Vaitkus, Otajonov Salimjon

Scientific Bulletin. Physical and Mathematical Research

In this work, we studied the ef-fect of excess tellurium and lead on the defor-mation characteristics of polycrystalline PbTe films obtained on different substrates. It was found that the resistance of the films first increases and reach-es a maximum, and with a further increase in the level of deformation, it decreases and the sign of the tensile resistance begins to change, which are associated with the presence of internal stresses in the films. It was also shown that with an increase in the amount of lead in the composition of the PbTe film, the electrical conductivity increases in com-parison with …


Structure And Electrophysical Properties Of A Solid Solution (Gaas1-Δbiδ)1-X-Y(Ge2)X(Znse)Y, S.Z. Zainabidinov, I.N. Karimov, Hotamjon Mansurov, Akramjon Boboev, Dilkhayotjon Pulatjon Ugli Abdurakhimov Jun 2021

Structure And Electrophysical Properties Of A Solid Solution (Gaas1-Δbiδ)1-X-Y(Ge2)X(Znse)Y, S.Z. Zainabidinov, I.N. Karimov, Hotamjon Mansurov, Akramjon Boboev, Dilkhayotjon Pulatjon Ugli Abdurakhimov

Scientific Bulletin. Physical and Mathematical Research

This paper shows the possibility of growing a single-crystal solid solution of substitution (GaAs1-δBiδ)1-x-y(Ge2)x(ZnSe)y on GaAs substrates by liquid-phase epitaxy from a bismuthcontaining solution-melt. The grown films had a ptype of conductivity with a current carrier concentration of 1,86·1017 сm-3, a mobility of р = 300 cm2/V·s, and a resistivity of 0,13 Ohms·cm. Structural studies have shown that the epitaxial films have a sphalerite structure of the ZnS type and are monocrystalline with an orientation of (100). The crystal lattice parameter of the film was af = 0,56697 nm. Studies of current-voltage characteris-tics of n-GaAs – p-(GaAs1-δBiδ)1-x-y(Ge2)x(ZnSe)y heterostructures at different …


Simulation Of Self-Heating Effect In Mosfet Based On 2d Mos2, Atabek E. Atamuratov, Xushnudbek Sh. Saparov, A Yusupov, Frank Schwierz Jun 2021

Simulation Of Self-Heating Effect In Mosfet Based On 2d Mos2, Atabek E. Atamuratov, Xushnudbek Sh. Saparov, A Yusupov, Frank Schwierz

Scientific Bulletin. Physical and Mathematical Research

One of the main trends of today's electronics is the decreasing the sizes of MOSFET up to nanometer scale. In this connection there are two main views to the perspective of scaling. According to one of them limit of scaling is reached at sizes 10 nm order, however according to second view, still there are opportunity to decrease transistor to more lower sizes. In accordance with second approach it is suggested to continue the size scaling by modification the transistor structure or by using the new materials, particularly one or two dimensional materials. One of such suggestions is the designing …


Method Of Characteristics For Solving The Problem Of Gas Outflow From An Elementary Sec-Tion Of A Gas Pipeline, Madaminjon K. Mahkamov, S.S. Akhmadjonov, I.K. Khujaev Jun 2021

Method Of Characteristics For Solving The Problem Of Gas Outflow From An Elementary Sec-Tion Of A Gas Pipeline, Madaminjon K. Mahkamov, S.S. Akhmadjonov, I.K. Khujaev

Scientific Bulletin. Physical and Mathematical Research

Numerous problems based on equations of hyperbolic type are solved by the method of characteristics when boundary conditions of the first, second and third kinds are set on the boundary. These include, in particular, the problems of pipeline transportation of various media. The quasi-one-dimensional equations of conservation of mass and momentum are linearized and separate equations are drawn up for a specific indicator (flow rate, gas pressure) of the process. This approach is associated with the tradition of forming boundary conditions and solving problems only with respect to a specific indicator, in particu-lar, with respect to pressure, velocity, and flow …


Electrophysical Properties Of Supercapacitor On The Basis Of New Gel Polymer Electrolyte, J.A. Shodmanov, Azamat Boymirzaev Jun 2021

Electrophysical Properties Of Supercapacitor On The Basis Of New Gel Polymer Electrolyte, J.A. Shodmanov, Azamat Boymirzaev

Scientific Bulletin. Physical and Mathematical Research

The results showed a slight increase in internal resistance under the influence of bending and confirmed that the equivalent circuit model of electrons did not change under bending conditions as indicated in graphically illustrated the results by cyclic voltamperometry (TsV) at a scanning speed of 10 mV / s under the above bending angles of the SK prepared on the basis of PG 10 GPE. From ex-periments we found that the shapes are almost rec-tangular, with no redox peaks observed. We can see that the area of the TsV curves changes slightly as the bending angle increases, but this does …


Influence Of A Strong Magnetic Field On Fermi Energy Oscillations In Two-Dimensional Semiconductor Materials, Gafur Gulyamov, Ulugbek Inayatillyevich Erkaboev, Rustam Gulomzhonovich Rakhimov, Nozimjon Sayidov Sayidov, Jasurbek Mirzaev Jun 2021

Influence Of A Strong Magnetic Field On Fermi Energy Oscillations In Two-Dimensional Semiconductor Materials, Gafur Gulyamov, Ulugbek Inayatillyevich Erkaboev, Rustam Gulomzhonovich Rakhimov, Nozimjon Sayidov Sayidov, Jasurbek Mirzaev

Scientific Bulletin. Physical and Mathematical Research

This article discusses the effect of a quantizing magnetic field and temperature on Fermi energy oscillations in nanoscale semiconductor materials. A generalized mathematical expression is obtained for calculating the dependence of the Fermi energy oscillations on the magnetic field, temperature, and thickness of the quantum well. It is shown that the Fermi energy in nanoscale semiconductor materials under a quantizing magnetic field is quantized. The proposed theory explains the experimental results in two-dimensional semiconductor structures with a parabolic dispersion law.


Determination Of The Specific Thermo Emf Of Granulated Silicon Doped With Alkaline Metals., B.M. Abdurakhmanov, Zarnigor Sohibova, M.M. Adilov Jun 2021

Determination Of The Specific Thermo Emf Of Granulated Silicon Doped With Alkaline Metals., B.M. Abdurakhmanov, Zarnigor Sohibova, M.M. Adilov

Scientific Bulletin. Physical and Mathematical Research

The value of the specific thermo EMF is one of the most important thermoelectric parameters of a material and in practice is estimat-ed mainly by two well-known methods - integral and differential. To measure the thermo EMF of granular silicon, we used a differential method. In this work, the thermoelectric properties of granular silicon containing alkali metal atoms have been studied, the presence of which, for example, in single-crystal structures makes it possible to improve the characteristics of a number of devices, and in polycrystalline ones, the effect of grain boundaries on the electrical properties, in particular, to reduce the …


The State Of Solar Energy In Uzbekistan In The Framework Of The Devel-Opment Of Renewable Energy Sources, E.Z. Imamov, Ramizulla Abdullaevich Muminov, Temur Asfandiyarovich Djalalov, I.Sh. Abdullaeva Jun 2021

The State Of Solar Energy In Uzbekistan In The Framework Of The Devel-Opment Of Renewable Energy Sources, E.Z. Imamov, Ramizulla Abdullaevich Muminov, Temur Asfandiyarovich Djalalov, I.Sh. Abdullaeva

Scientific Bulletin. Physical and Mathematical Research

The paper analyzes the possibilities of renewable energy sources to become the main sources of ener-gy that can in the future replace traditional technologies for the production of thermal and electrical energy based on the use of fossil fuels and nuclear energy.

Technological approaches are considered that make it possible to significantly increase the efficiency of solar energy, and it is also shown that such a possibility can be realized by using weakly crystalline and cheap modifications of silicon, which have previously passed the corresponding nanotechnological effect.


Properties And Applications Of Metal-Oxide Thin Films In Converters Of En-Ergy (Review), Shakhriyor Kh. Yulchiev, Akramjon Boboev, Xushruybek Mahmudov Jun 2021

Properties And Applications Of Metal-Oxide Thin Films In Converters Of En-Ergy (Review), Shakhriyor Kh. Yulchiev, Akramjon Boboev, Xushruybek Mahmudov

Scientific Bulletin. Physical and Mathematical Research

Metal-oxide semiconductors (SnO2, ZnO, TiO2, etc.) have a wide band gap (~3 eV) and are trans-parent in the visible range of the optical spectrum. Therefore, transparent semiconductor devices (diodes, transistors, integrated circuits, etc.) can be made based on them. There are two peaks in the emission spectrum of the LED. One of the peaks (3.3 eV), apparently, is as-sociated with exciton recombination, and the other peak is associated with recombination through a deep impuri-ty level. The emission spectrum of the LED was ob-served at a direct current of 40 mA. The electrolumines-cence spectrum obtained on the heterostructure at room temperature …


Development And Implementation Of A Photovoltaic Power Plant With A Capacity Of 3-6 Kw With “Smart Greed” Elements In The Conditions Of The Fergana Valley, Райимжон Алиев, Жамшидбек Каххоров, Авазбек Мирзаалимов, Наврузбек Мирзаалимов, Бобур Рашидов Jun 2021

Development And Implementation Of A Photovoltaic Power Plant With A Capacity Of 3-6 Kw With “Smart Greed” Elements In The Conditions Of The Fergana Valley, Райимжон Алиев, Жамшидбек Каххоров, Авазбек Мирзаалимов, Наврузбек Мирзаалимов, Бобур Рашидов

Scientific Bulletin. Physical and Mathematical Research

Today, solar cells are manufactured at the industrial level mainly from polycrystalline and monocrystalline silicon. Solar elements made of silicon make up more than 90% of the solar elements that are produced worldwide. Depending on the seasons of the year in the Ferghana Valley, the movement of the Sun, geographical location, air humidity, temperature changes, the intensity of light falling on the surface of solar panels and other parameters, the characteristic (I-V) of solar panels was studied. The installation of solar panels installed at Andijan State University consists of the installation, commissioning and analysis of the results obtained on sunny, …


A Cauchy-Goursat Problem For A Second Kind Degenerated Equation Of Hyperbolic Type, Doniyor Usmonov Jun 2021

A Cauchy-Goursat Problem For A Second Kind Degenerated Equation Of Hyperbolic Type, Doniyor Usmonov

Scientific Bulletin. Physical and Mathematical Research

In the work a Cauchy-Goursta problem has been formulated and investigated for a second kind degenerated equation of hyperbolic type. During the investigation, it was used properties of Gauss’s hyper geometric function and symbol of Pochhammer, the considered problem equivalently reduced to an integral equation with respect to trace of unknown function. Properties of Riemann-Liuvill integral-differential and generalized integral-differential operators have found solution of the taken integral equation. To find solution of the problem it was used general solution of the equation. A class of generalized solutions was introduced for the correctness of the problem. It was found necessary conditions …


Evolution Of Quantum Systems Consisting Of Mul-Tiple Various Particles Interacting With General-Ized Yukasha Potential, N.N. Bogolyubov, Rasulova Mukhayo, U.O. Avazov Jun 2021

Evolution Of Quantum Systems Consisting Of Mul-Tiple Various Particles Interacting With General-Ized Yukasha Potential, N.N. Bogolyubov, Rasulova Mukhayo, U.O. Avazov

Scientific Bulletin. Physical and Mathematical Research

In this paper, multi-variety densely packed par-ticle dynamic systems with the ability to interact with the shielded Yukawa potential were studied. Also, in order to study more widely the dynamics of systems containing particles interacting via shielded potential, the theoretical foundations of the dynam-ics of systems consisting of an arbitrary number of bounded - sorted multi-particles are analyzed. The dynamics of an arbitrary number of interacting par-ticle systems on a screening potential was studied using the Bogolyubov-Born-Green-Kirkwood-Yvon (BBGKY) chain of quantum kinetic equations. The BBGKY chain of quantum kinetic equations has solutions for the case that characterizes the evo-lution of …


Measurement Of Geometric Fractals On The Basis Of Hausdorf-Bezikovich And Minkovsky-Buligan Measurements, Anorova Amanbaevna Shaxzoda, Jabborov Sindorovich Jamoliddin, Meliyev Fattoevich Farxod Jun 2021

Measurement Of Geometric Fractals On The Basis Of Hausdorf-Bezikovich And Minkovsky-Buligan Measurements, Anorova Amanbaevna Shaxzoda, Jabborov Sindorovich Jamoliddin, Meliyev Fattoevich Farxod

Scientific Bulletin. Physical and Mathematical Research

This article is devoted to the study of the future position of fractal measurements. Different methods of computer modeling of a wide range of classes of fractal geometric objects are described in detail, as well as the main methods of mathematical analysis of fractal size of virtual and real fractals are described. The article explains the differences between the concept of fractals, their properties, B. Mandelbrot's tariff, Hausdorf-Bezikovich scale, Minkowski-Buligan scale, topological measurement, the concept of fractal measurement and measurement in Euclidean geometry. This article provides basic information about fractals. A detailed description of the various methods of computer modeling …


Lessons From The Classroom – Assessing The Work Of Postgraduate Students To Support Better Hygrothermal Risk Assessment, Joseph Little, Beñat Arregi, Christian Bludau Jun 2021

Lessons From The Classroom – Assessing The Work Of Postgraduate Students To Support Better Hygrothermal Risk Assessment, Joseph Little, Beñat Arregi, Christian Bludau

Conference papers

The widespread adoption of transient simulation modelling tools by building design professionals to support hygrothermal risk assessment of building design specifications is a crucial component in a multi-pronged drive to reduce moisture risk in buildings. Structured upskilling is essential. Much can be learnt about the ways practitioners use such tools by reviewing the work of professional postgraduate student groups. Such review could inform the creation of a user protocol. Peer-review under the responsibility of the organizing committee of the ICMB21.


Extended Very-High-Energy Gamma-Ray Emission Surrounding Psr J0622+3749 Observed By Lhaaso-Km2a, F. Aharonian, Q. An, Axikegu, L. X. Bai, Y. X. Bai, Y. W. Bao, D. Bastieri, X. J. Bi, Y. J. Bi, H. Cai, J. T. Cai, Z. Cao, Z. Cao, J. Chang, J. F. Chang, X. C. Chang, B. M. Chen, J. Chen, L. Chen, L. Chen, L. Chen, M. J. Chen, M. L. Chen, Q. H. Chen, S. H. Chen, S. Z. Chen, T. L. Chen, X. L. Chen, Y. Chen, N. Cheng, Y. D. Cheng, S. W. Cui, X. H. Cui, Y. D. Cui, B. Z. Dai, H. L. Dai, Z. G. Dai, Danzen Gluobu, D. Della Volpe, B. D'Ettorre Piazzoli, X. J. Dong, J. H. Fan, Y. Z. Fan, Z. X. Fan, J. Fang, K. Fang, C. F. Feng, L. Feng, S. H. Feng, Y. L. Feng, B. Gao, C. D. Gao, Q. Gao, W. Gao, M. M. Ge, L. S. Geng, G. H. Gong, Q. B. Gou, M. H. Gu, J. G. Guo, X. L. Guo, Y. Q. Guo, Y. Y. Guo, Y. A. Han, H. H. He, H. N. He, J. C. He, S. L. He, X. B. He, Y. He, M. Heller, Y. K. Hor, C. Hou, X. Hou, H. B. Hu, S. Hu, S. C. Hu, X. J. Hu, D. H. Huang, Q. L. Huang, W. H. Huang, X. T. Huang, Z. C. Huang, F. Ji, X. L. Ji, H. Y. Jia, K. Jiang, Z. J. Jiang, C. Jin, D. Kuleshov, K. Levochkin, B. B. Li, C. Li, C. Li, F. Li, H. B. Li, H. C. Li, H. Y. Li, J. Li, K. Li, W. L. Li, X. Li, X. Li, X. R. Li, Y. Li, Y. Z. Li, Z. Li, Z. Li, E. W. Liang, Y. F. Liang, S. J. Lin, B. Liu, C. Liu, D. Liu, H. Liu, H. D. Liu, J. Liu, J. L. Liu, J. S. Liu, J. Y. Liu, M. Y. Liu, R. Y. Liu, S. M. Liu, W. Liu, Y. N. Liu, Z. X. Liu, W. J. Long, R. Lu, H. K. Lv, B. Q. Ma, L. L. Ma, X. H. Ma, J. R. Mao, A. Masood, W. Mittthumsiri, T. Montaruli, Y. C. Nan, B. Y. Pang, P. Pattarakijwanich, Z. Y. Pei, M. Y. Qi, D. Ruffolo, V. Rulev, A. Saiz, L. Shao, O. Shchegolev, X. D. Sheng, J. R. Shi, H. C. Song, Yu. V. Stenkin, V. Stepanov, Q. N. Sun, X. N. Sun, Z. B. Sun, P. H. T. Tam, Z. B. Tang, W. W. Tian, B. D. Wang, C. Wang, H. Wang, H. G. Wang, J. C. Wang, J. S. Wang, L. P. Wang, R. N. Wang, W. Wang, W. Wang, X. G. Wang, Xiaojie Wang, X. Y. Wang, Y. D. Wang, Y. J. Wang, Y. P. Wang, Z. Wang, Z. Wang, Z. H. Wang, Z. X. Wang, D. M. Wei, J. J. Wei, Y. J. Wei, T. Wen, C. Y. Wu, H. R. Wu, S. Wu, W. X. Wu, X. F. Wu, S. Q. Xi, J. Xia, J. J. Xia, G. M. Xiang, G. Xiao, H. B. Xiao, G. G. Xin, Y. L. Xin, Y. Xing, D. L. Xu, R. X. Xu, L. Xue, D. H. Han, C. W. Yang, F. F. Yang, J. Y. Yang, L. L. Yang, M. J. Yang, R. Z. Yang, S. B. Yang, Y. H. Yao, Z. G. Yao, Y. M. Ye, L. Q. Yin, N. Yin, X. H. You, Z. Y. You, Y. H. Yu, Q. Yuan, H. D. Zeng, T. X. Zeng, W. Zeng, Z. K. Zeng, M. Zha, X. X. Zhai, B. B. Zhang, H. M. Zhang, H. Y. Zhang, J. L. Zhang, J. W. Zhang, L. Zhang, L. Zhang, L. X. Zhang, P. F. Zhang, P. P. Zhang, R. Zhang, S. R. Zhang, S. S. Zhang, X. Zhang, X. P. Zhang, Y. Zhang, Y. Zhang, Y. F. Zhang, Y. L. Zhang, B. Zhao, J. Zhao, L. Zhao, L. Z. Zhao, S. P, Zhao, F. Zheng, Y. Zheng, B. Zhou, H. Zhou, J. N. Zhou, P. Zhou, R. Zhou, X. X. Zhou, C. G. Zhu, F. R. Zhu, H. Zhu, K. J. Zhu, X. Zuo Jun 2021

Extended Very-High-Energy Gamma-Ray Emission Surrounding Psr J0622+3749 Observed By Lhaaso-Km2a, F. Aharonian, Q. An, Axikegu, L. X. Bai, Y. X. Bai, Y. W. Bao, D. Bastieri, X. J. Bi, Y. J. Bi, H. Cai, J. T. Cai, Z. Cao, Z. Cao, J. Chang, J. F. Chang, X. C. Chang, B. M. Chen, J. Chen, L. Chen, L. Chen, L. Chen, M. J. Chen, M. L. Chen, Q. H. Chen, S. H. Chen, S. Z. Chen, T. L. Chen, X. L. Chen, Y. Chen, N. Cheng, Y. D. Cheng, S. W. Cui, X. H. Cui, Y. D. Cui, B. Z. Dai, H. L. Dai, Z. G. Dai, Danzen Gluobu, D. Della Volpe, B. D'Ettorre Piazzoli, X. J. Dong, J. H. Fan, Y. Z. Fan, Z. X. Fan, J. Fang, K. Fang, C. F. Feng, L. Feng, S. H. Feng, Y. L. Feng, B. Gao, C. D. Gao, Q. Gao, W. Gao, M. M. Ge, L. S. Geng, G. H. Gong, Q. B. Gou, M. H. Gu, J. G. Guo, X. L. Guo, Y. Q. Guo, Y. Y. Guo, Y. A. Han, H. H. He, H. N. He, J. C. He, S. L. He, X. B. He, Y. He, M. Heller, Y. K. Hor, C. Hou, X. Hou, H. B. Hu, S. Hu, S. C. Hu, X. J. Hu, D. H. Huang, Q. L. Huang, W. H. Huang, X. T. Huang, Z. C. Huang, F. Ji, X. L. Ji, H. Y. Jia, K. Jiang, Z. J. Jiang, C. Jin, D. Kuleshov, K. Levochkin, B. B. Li, C. Li, C. Li, F. Li, H. B. Li, H. C. Li, H. Y. Li, J. Li, K. Li, W. L. Li, X. Li, X. Li, X. R. Li, Y. Li, Y. Z. Li, Z. Li, Z. Li, E. W. Liang, Y. F. Liang, S. J. Lin, B. Liu, C. Liu, D. Liu, H. Liu, H. D. Liu, J. Liu, J. L. Liu, J. S. Liu, J. Y. Liu, M. Y. Liu, R. Y. Liu, S. M. Liu, W. Liu, Y. N. Liu, Z. X. Liu, W. J. Long, R. Lu, H. K. Lv, B. Q. Ma, L. L. Ma, X. H. Ma, J. R. Mao, A. Masood, W. Mittthumsiri, T. Montaruli, Y. C. Nan, B. Y. Pang, P. Pattarakijwanich, Z. Y. Pei, M. Y. Qi, D. Ruffolo, V. Rulev, A. Saiz, L. Shao, O. Shchegolev, X. D. Sheng, J. R. Shi, H. C. Song, Yu. V. Stenkin, V. Stepanov, Q. N. Sun, X. N. Sun, Z. B. Sun, P. H. T. Tam, Z. B. Tang, W. W. Tian, B. D. Wang, C. Wang, H. Wang, H. G. Wang, J. C. Wang, J. S. Wang, L. P. Wang, R. N. Wang, W. Wang, W. Wang, X. G. Wang, Xiaojie Wang, X. Y. Wang, Y. D. Wang, Y. J. Wang, Y. P. Wang, Z. Wang, Z. Wang, Z. H. Wang, Z. X. Wang, D. M. Wei, J. J. Wei, Y. J. Wei, T. Wen, C. Y. Wu, H. R. Wu, S. Wu, W. X. Wu, X. F. Wu, S. Q. Xi, J. Xia, J. J. Xia, G. M. Xiang, G. Xiao, H. B. Xiao, G. G. Xin, Y. L. Xin, Y. Xing, D. L. Xu, R. X. Xu, L. Xue, D. H. Han, C. W. Yang, F. F. Yang, J. Y. Yang, L. L. Yang, M. J. Yang, R. Z. Yang, S. B. Yang, Y. H. Yao, Z. G. Yao, Y. M. Ye, L. Q. Yin, N. Yin, X. H. You, Z. Y. You, Y. H. Yu, Q. Yuan, H. D. Zeng, T. X. Zeng, W. Zeng, Z. K. Zeng, M. Zha, X. X. Zhai, B. B. Zhang, H. M. Zhang, H. Y. Zhang, J. L. Zhang, J. W. Zhang, L. Zhang, L. Zhang, L. X. Zhang, P. F. Zhang, P. P. Zhang, R. Zhang, S. R. Zhang, S. S. Zhang, X. Zhang, X. P. Zhang, Y. Zhang, Y. Zhang, Y. F. Zhang, Y. L. Zhang, B. Zhao, J. Zhao, L. Zhao, L. Z. Zhao, S. P, Zhao, F. Zheng, Y. Zheng, B. Zhou, H. Zhou, J. N. Zhou, P. Zhou, R. Zhou, X. X. Zhou, C. G. Zhu, F. R. Zhu, H. Zhu, K. J. Zhu, X. Zuo

Physics Faculty Research & Creative Works

We report the discovery of an extended very-high-energy (VHE) gamma-ray source around the location of the middle-aged (207.8 kyr) pulsar PSR J0622+3749 with the Large High-Altitude Air Shower Observatory (LHAASO). The source is detected with a significance of 8.2σ for E>25 TeV assuming a Gaussian template. The best-fit location is (right ascension, declination) =(95.47°±0.11°,37.92°±0.09°), and the extension is 0.40°±0.07°. The energy spectrum can be described by a power-law spectrum with an index of -2.92±0.17stat±0.02sys. No clear extended multiwavelength counterpart of the LHAASO source has been found from the radio to sub-TeV bands. The LHAASO observations are consistent with the …


Ultrahigh-Energy Photons Up To 1.4 Petaelectronvolts From 12 Γ-Ray Galactic Sources, Zhen Cao, F. A. Aharonian, Q. An, Axikegu, L. X. Bai, Y. X. Bai, Y. W. Bao, D. Bastieri, X. J. Bi, Y. J. Bi, H. Cai, J. T. Cai, Zhe Cao, J. Chang, J. F. Chang, X. C. Chang, B. M. Chen, J. Chen, L. Chen, Liang Chen, Long Chen, M. J. Chen, M. L. Chen, Q. H. Chen, S. H. Chen, S. Z. Chen, T. L. Chen, X. L. Chen, Y. Chen, N. Cheng, Y. D. Cheng, S. W. Cui, X. H. Cui, Y. D. Cui, B. Z. Dai, H. L. Dai, Z. G. Dai, Danzen Gluobu, D. Della Volpe, B. D'Ettorre Piazzoli, X. J. Dong, J. H. Fan, Y. Z. Fan, Z. X. Fan, J. Fang, K. Fang, C. F. Feng, L. Feng, S. H. Feng, Y. L. Feng, B. Gao, C. D. Gao, Q. Gao, W. Gao, M. M. Ge, L. S. Geng, G. H. Gong, Q. B. Gou, M. H. Gu, J. G. Guo, X. L. Guo, Y. Q. Guo, Y. Y. Guo, Y. A. Han, H. H. He, H. N. He, J. C. He, S. L. He, X. B. He, Y. He, M. Heller, Y. K. Hor, C. Hou, X. Hou, H. B. Hu, S. Hu, S. C. Hu, X. J. Hu, D. H. Huang, Q. L. Huang, W. H. Huang, X. T. Huang, Z. C. Huang, F. Ji, X. L. Ji, H. Y. Jia, K. Jiang, Z. J. Jiang, C. Jin, D. Kuleshov, K. Levochkin, B. B. Li, Cong Li, Cheng Li, F. Li, H. B. Li, H. C. Li, H. Y. Li, J. Li, K. Li, W. L. Li, X. Li, Xin Li, X. R. Li, Y. Li, Y. Z. Li, Zhe Li, Zhou Li, E. W. Long, Y. F. Liang, S. J. Lim, B. Liu, C. Liu, D. Liu, H. Liu, H. D. Liu, J. Liu, J. L. Liu, J. S. Liu, J. Y. Liu, M. Y. Liu, R. Y. Liu, S. M. Liu, W. Liu, Y. N. Liu, Z. X. Liu, W. J. Long, R. Lu, H. K. Lv, B. Q. Ma, L. L. Ma, X. H. Ma, J. R. Mao, A. Masood, W. Mitthumsiri, T. Montaruli, Y. C. Nan, B. Y. Peng, P. Pattarakijwanich, Z. Y. Pei, M. Y. Qi, D. Ruffolo, V. Rulev, A. Saiz, L. Shao, O. Shchegolev, X. D. Sheng, J. R. Shi, H. C. Song, Yu. V. Stenkin, V. Stepanov, Q. N. Sun, X. N. Sun, Z. B. Sun, P. H. T. Tam, Z. B. Tang, W. W. Tian, B. D. Wang, C. Wang, H. Wang, H. G. Wang, J. C. Wang, J. S. Wang, L. P. Wang, L. Y. Wang, R. N. Wang, W. Wang, W. Wang, X. G. Wang, Xiaojie Wang, X. Y. Wang, Y. D. Wang, Y. J. Wang, Y. P. Wang, Zheng Wang, Zhen Wang, Z. H. Wang, Z. X. Wang, D. M. Wei, J. J. Wei, Y. J. Wei, T. Wen, C. Y. Wu, H. R. Wu, S. Wu, W. X. Wu, X. F. Wu, S. Q. Xi, J. Xia, J. J. Xia, G. M. Xiang, G. Xiao, H. B. Xiao, G. G. Xin, Y. L. Xin, Y. Xing, D. L. Xu, R. X. Xu, L. Xue, D. H. Yan, C. W. Yang, F. F. Yang, J. Y. Yang, L. L. Yang, M. J. Yang, R. Z. Yang, S. B. Yang, Y. H. Yao, Z. G. Yao, Y. M. Ye, L. Q. Yin, N. Yin, X. H. You, Z. Y. You, Y. H. Yu, Q. Yuan, H. D. Zeng, T. X. Zeng, W. Zeng, Z. K. Zeng, M. Zha, X. X. Zhai, B. B. Zhang, H. M. Zhang, H. Y. Zhang, J. L. Zhang, J. W. Zhang, L. Zhang, Li Zhang, L. X. Zhang, P. F. Zhang, P. P. Zhang, R. Zhang, R. Zhang, S. R. Zhang, S. S. Zhang, X. Zhang, X. P. Zhang, Yong Zhang, Yi Zhang, Y. F. Zhang, Y. L. Zhang, B. Zhao, J. Zhao, L. Zhao, L. Z. Zhao, S. P. Zhao, F. Zheng, Y. Zheng, B. Zhou, H. Zhou, J. N. Zhou, P. Zhou, R. Zhou, X. X. Zhou, C. G. Zhu, F. R. Zhu, H. Zhu, K. J. Zhu, X. Zuo Jun 2021

Ultrahigh-Energy Photons Up To 1.4 Petaelectronvolts From 12 Γ-Ray Galactic Sources, Zhen Cao, F. A. Aharonian, Q. An, Axikegu, L. X. Bai, Y. X. Bai, Y. W. Bao, D. Bastieri, X. J. Bi, Y. J. Bi, H. Cai, J. T. Cai, Zhe Cao, J. Chang, J. F. Chang, X. C. Chang, B. M. Chen, J. Chen, L. Chen, Liang Chen, Long Chen, M. J. Chen, M. L. Chen, Q. H. Chen, S. H. Chen, S. Z. Chen, T. L. Chen, X. L. Chen, Y. Chen, N. Cheng, Y. D. Cheng, S. W. Cui, X. H. Cui, Y. D. Cui, B. Z. Dai, H. L. Dai, Z. G. Dai, Danzen Gluobu, D. Della Volpe, B. D'Ettorre Piazzoli, X. J. Dong, J. H. Fan, Y. Z. Fan, Z. X. Fan, J. Fang, K. Fang, C. F. Feng, L. Feng, S. H. Feng, Y. L. Feng, B. Gao, C. D. Gao, Q. Gao, W. Gao, M. M. Ge, L. S. Geng, G. H. Gong, Q. B. Gou, M. H. Gu, J. G. Guo, X. L. Guo, Y. Q. Guo, Y. Y. Guo, Y. A. Han, H. H. He, H. N. He, J. C. He, S. L. He, X. B. He, Y. He, M. Heller, Y. K. Hor, C. Hou, X. Hou, H. B. Hu, S. Hu, S. C. Hu, X. J. Hu, D. H. Huang, Q. L. Huang, W. H. Huang, X. T. Huang, Z. C. Huang, F. Ji, X. L. Ji, H. Y. Jia, K. Jiang, Z. J. Jiang, C. Jin, D. Kuleshov, K. Levochkin, B. B. Li, Cong Li, Cheng Li, F. Li, H. B. Li, H. C. Li, H. Y. Li, J. Li, K. Li, W. L. Li, X. Li, Xin Li, X. R. Li, Y. Li, Y. Z. Li, Zhe Li, Zhou Li, E. W. Long, Y. F. Liang, S. J. Lim, B. Liu, C. Liu, D. Liu, H. Liu, H. D. Liu, J. Liu, J. L. Liu, J. S. Liu, J. Y. Liu, M. Y. Liu, R. Y. Liu, S. M. Liu, W. Liu, Y. N. Liu, Z. X. Liu, W. J. Long, R. Lu, H. K. Lv, B. Q. Ma, L. L. Ma, X. H. Ma, J. R. Mao, A. Masood, W. Mitthumsiri, T. Montaruli, Y. C. Nan, B. Y. Peng, P. Pattarakijwanich, Z. Y. Pei, M. Y. Qi, D. Ruffolo, V. Rulev, A. Saiz, L. Shao, O. Shchegolev, X. D. Sheng, J. R. Shi, H. C. Song, Yu. V. Stenkin, V. Stepanov, Q. N. Sun, X. N. Sun, Z. B. Sun, P. H. T. Tam, Z. B. Tang, W. W. Tian, B. D. Wang, C. Wang, H. Wang, H. G. Wang, J. C. Wang, J. S. Wang, L. P. Wang, L. Y. Wang, R. N. Wang, W. Wang, W. Wang, X. G. Wang, Xiaojie Wang, X. Y. Wang, Y. D. Wang, Y. J. Wang, Y. P. Wang, Zheng Wang, Zhen Wang, Z. H. Wang, Z. X. Wang, D. M. Wei, J. J. Wei, Y. J. Wei, T. Wen, C. Y. Wu, H. R. Wu, S. Wu, W. X. Wu, X. F. Wu, S. Q. Xi, J. Xia, J. J. Xia, G. M. Xiang, G. Xiao, H. B. Xiao, G. G. Xin, Y. L. Xin, Y. Xing, D. L. Xu, R. X. Xu, L. Xue, D. H. Yan, C. W. Yang, F. F. Yang, J. Y. Yang, L. L. Yang, M. J. Yang, R. Z. Yang, S. B. Yang, Y. H. Yao, Z. G. Yao, Y. M. Ye, L. Q. Yin, N. Yin, X. H. You, Z. Y. You, Y. H. Yu, Q. Yuan, H. D. Zeng, T. X. Zeng, W. Zeng, Z. K. Zeng, M. Zha, X. X. Zhai, B. B. Zhang, H. M. Zhang, H. Y. Zhang, J. L. Zhang, J. W. Zhang, L. Zhang, Li Zhang, L. X. Zhang, P. F. Zhang, P. P. Zhang, R. Zhang, R. Zhang, S. R. Zhang, S. S. Zhang, X. Zhang, X. P. Zhang, Yong Zhang, Yi Zhang, Y. F. Zhang, Y. L. Zhang, B. Zhao, J. Zhao, L. Zhao, L. Z. Zhao, S. P. Zhao, F. Zheng, Y. Zheng, B. Zhou, H. Zhou, J. N. Zhou, P. Zhou, R. Zhou, X. X. Zhou, C. G. Zhu, F. R. Zhu, H. Zhu, K. J. Zhu, X. Zuo

Physics Faculty Research & Creative Works

The extension of the cosmic-ray spectrum beyond 1 petaelectronvolt (PeV; 1015 electronvolts) indicates the existence of the so-called PeVatrons—cosmic-ray factories that accelerate particles to PeV energies. We need to locate and identify such objects to find the origin of Galactic cosmic rays1. The principal signature of both electron and proton PeVatrons is ultrahigh energy (exceeding 100 TeV) γ radiation. Evidence of the presence of a proton PeVatron has been found in the Galactic Centre, according to the detection of a hard-spectrum radiation extending to 0.04 PeV (ref. 2). Although γ-rays with energies slightly higher than 0.1 …


Corrigendum: Surface Termination And Schottky-Barrier Formation Of In4Se3(001) [Semiconductor Science And Technology (2020) 35 (065009) Doi: 10.1088/1361-6641/Ab7e45], Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai-Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter Dowben Jun 2021

Corrigendum: Surface Termination And Schottky-Barrier Formation Of In4Se3(001) [Semiconductor Science And Technology (2020) 35 (065009) Doi: 10.1088/1361-6641/Ab7e45], Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai-Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter Dowben

Peter Dowben Publications

Through the description of various surface terminations, the chain direction of In4Se3 in this paper [1] is implied to be in the plane of its surface. Even though the common convention for photoemission spectroscopy is to place z-axis along the surface normal, the axis perpendicular to the growth direction for this indium selenide is the crystallographic a-axis (and not the c-axis) [2–4]. Therefore, in our work the surface of In4Se3 should have been labeled (100), and not (001), to prevent any confusion that may have resulted from a less than conventional index notation. Data availability statement The data that support …


Colossal Intrinsic Exchange Bias From Interfacial Reconstruction In Epitaxial Cofe2 O4/Al2 O3 Thin Films, Detian Yang, Yu Yun, Arjun Subedi, Nicholas E. Rogers, David M. Cornelison, Peter Dowben, Xiaoshan Xu Jun 2021

Colossal Intrinsic Exchange Bias From Interfacial Reconstruction In Epitaxial Cofe2 O4/Al2 O3 Thin Films, Detian Yang, Yu Yun, Arjun Subedi, Nicholas E. Rogers, David M. Cornelison, Peter Dowben, Xiaoshan Xu

Peter Dowben Publications

We have studied the epitaxial CoFe2O4 (111) films grown on Al2O3 (0001) substrates of different thickness at various temperature and discovered colossal intrinsic exchange bias up to 7 ± 2 kOe. X-ray and electron diffraction clearly indicate an interfacial layer about 2 nm of different crystal structure from the “bulk” part of the CoFe2O4 film. The thickness dependence of the exchange bias suggests a hidden antiferromagnetic composition in the interfacial layer that couples to the ferrimagnetic “bulk” part of the CoFe2O4 film as the origin of the exchange …


Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu Jun 2021

Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu

Master's Theses

The processors and digital circuits designed today contain billions of transistors on a small piece of silicon. As devices are becoming smaller, slimmer, faster, and more efficient, the transistors also have to keep up with the demands and needs of the daily user. Unfortunately, the CMOS technology has reached its limit and cannot be used to scale down due to the transistor's breakdown caused by short channel effects. An alternative solution to this is the FinFET transistor technology, where the gate of the transistor is a three dimensional fin that surrounds the transistor and prevents the breakdown caused by scaling …


Realization Of Bsu First Magneto-Optical Trap For The Spatial Confinement Of Rb Atoms Using Next Generation Fiber Optic Capabilities With Minimot, Brahmin Thurber-Carbone May 2021

Realization Of Bsu First Magneto-Optical Trap For The Spatial Confinement Of Rb Atoms Using Next Generation Fiber Optic Capabilities With Minimot, Brahmin Thurber-Carbone

Honors Program Theses and Projects

This paper will be a combination of my theoretical and experimental work toward Bridgewater State Universities first Magneto-Optical Trap (MOT) for laser cooling and trapping of neutral atoms in order to study fundamental quantum mechanical behavior of Rubidium (Rb) atoms. The goal of the theoretical aspect is to complete details of well-established works on how the complicated quantum, atomic, and electromagnetic (laser) interactions required to understand the design and operation of the MOT reduce to the physics and mathematics of a damped oscillator. This is made explicitly clear using familiar damped oscillator systems, such as a spring/mass/damping or pendulum/mass/damping (ie …


Magnetism And Topological Hall Effect In Antiferromagnetic Ru2Mnsn-Based Heusler Compounds, Wenyong Zhang, Balamurugan Balasubramanian, Yang Sun, Ahsan Ullah, Ralph Skomski, Rabindra Pahari, Shah R. Valloppilly, Xingzhong Li, Cai-Zhuang Wang, Kai-Ming Ho, David J. Sellmyer May 2021

Magnetism And Topological Hall Effect In Antiferromagnetic Ru2Mnsn-Based Heusler Compounds, Wenyong Zhang, Balamurugan Balasubramanian, Yang Sun, Ahsan Ullah, Ralph Skomski, Rabindra Pahari, Shah R. Valloppilly, Xingzhong Li, Cai-Zhuang Wang, Kai-Ming Ho, David J. Sellmyer

Nebraska Center for Materials and Nanoscience: Faculty Publications

Heusler compounds and alloys based on them are of great recent interest because they exhibit a wide variety of spin structures, magnetic properties, and electron-transport phenomena. Their properties are tunable by alloying and we have investigated L21-ordered compound Ru2MnSn and its alloys by varying the atomic Mn:Sn composition. While antiferromagnetic ordering with a Néel temperature of 361 K was observed in Ru2MnSn, the Mn-poor Ru2Mn0.8Sn1.2 alloy exhibits properties of a diluted antiferromagnet in which there are localized regions of uncompensated Mn spins. Furthermore, a noncoplanar spin structure, evident from …


Virtual Prototyping Of Liquid Lithium Divertor Concepts, Brennan Arnold May 2021

Virtual Prototyping Of Liquid Lithium Divertor Concepts, Brennan Arnold

Macalester Journal of Physics and Astronomy

A tokamak divertor must withstand power deposition in excess of 10 MW/m^2 in steady state and much higher in disruptions, enough to destroy nearly any material. In order to handle this extreme heat, there is some interest in using liquid metal flows to continually renew the divertor surface. In this paper, we examine an idea for a divertor with a porous surface that allows liquid lithium flowing through the divertor to percolate to the plasma facing surface. This idea is complicated by magnetohydrodynamic drag, where the stong magnetic fields in the tokamak cause the lithium to flow too slowly to …