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Articles 1 - 30 of 192
Full-Text Articles in Engineering Physics
Characterization Of Interlayer Laser Shock Peening During Fused Filament Fabrication Of Polylactic Acid (Pla), Fabien Denise
Characterization Of Interlayer Laser Shock Peening During Fused Filament Fabrication Of Polylactic Acid (Pla), Fabien Denise
Department of Engineering Mechanics: Dissertations, Theses, and Student Research
The field of additive manufacturing (AM) has gained a significant amount of popularity due to the increasing need for more sustainable manufacturing techniques and the adaptive development of complex product geometries. The problem is that AM parts routinely exhibit flaws or weaknesses that affect functionality or performance. Over the years, surface treatments have been developed to compensate certain flaws or weaknesses in manufactured products. Combining surface treatments with the modularity of additive manufacturing could lead to more adaptable and creative improvements of product functions in the future. The current work evaluates the feasibility of pursuing a new research axis in …
Hydroxyapatite-Based Coatings On Silicon Wafers And Printed Zirconia, Antoine Chauvin
Hydroxyapatite-Based Coatings On Silicon Wafers And Printed Zirconia, Antoine Chauvin
Department of Mechanical and Materials Engineering: Dissertations, Theses, and Student Research
Dental surgery needs a naturally attract implant design that can ensure both osseointegration and soft tissue integration. Hydroxyapatite (HAp), the main mineral constituent of dentine and tooth enamel, is commonly used as a coating component, notably for overlaying titanium– or ceramics–based implants. This thesis aims to investigate the behavior of a HAp-based coating, specifically designed to be compatible with a porous substrate. Coating layers are made by sol–gel dip coating by immersion of porous substrates made by additive manufacturing into solutions of HAp, having been mixed with polyethyleneimine (PEI), to improve the adhesion of HAp on the substrate. First, the …
Ferroelectric Hafnia Surface In Action, Xia Hong
Ferroelectric Hafnia Surface In Action, Xia Hong
Nebraska Center for Materials and Nanoscience: Faculty Publications
Piezoresponse microscopy and spectroscopy reveal the inextricable role of surface electrochemistry in stabilizing and controlling ferroelectricity in doped hafnia.
Doped hafnia (HfO2), a relatively new member of the ferroelectric family, has challenged in many ways our conventional perception of ferroelectric oxides. It possesses extremely localized electric dipoles that are independently switchable,1 making it immune to finite size effects — the loss of long-range dipole order in ferroic materials due to size scaling. While polycrystalline grains and microstructures can yield lower polarization and poorer cycling behavior in canonical ferroelectrics such as Pb(Zr,Ti)O3 and BaTiO3, in …
Domain Wall Saddle Point Morphology In Ferroelectric Triglycine Sulfate, C. J. Mccluskey, A. Kumar, Alexei Gruverman, I. Luk’Yanchuk, J. M. Gregg
Domain Wall Saddle Point Morphology In Ferroelectric Triglycine Sulfate, C. J. Mccluskey, A. Kumar, Alexei Gruverman, I. Luk’Yanchuk, J. M. Gregg
Alexei Gruverman Publications
Ferroelectric domain walls, across which there is a divergence in polarization, usually have enhanced electrical conductivity relative to bulk. However, in lead germanate, head-to-head and tail-to-tail walls are electrically insulating. Recent studies have shown that this is because, when oppositely oriented domains meet, polar divergence is obviated by a combination of domain bifurcation and suspected local dipolar rotation. To explore the uniqueness, or otherwise, of this microstructure, we have used tomographic piezoresponse force microscopy to map three-dimensional domain morphologies in another uniaxial ferroelectric system: triglycine sulfate. This mapping reveals an abundance of domain wall saddle points, which are characteristic of …
Assessment Of Bridge Pier Response To Fire, Vehicle Impact, And Air Blast, Chen Fang, Qusai Alomari, Daniel G. Linzell
Assessment Of Bridge Pier Response To Fire, Vehicle Impact, And Air Blast, Chen Fang, Qusai Alomari, Daniel G. Linzell
Department of Civil and Environmental Engineering: Dissertations, Theses, and Student Research
Highway bridges exposed to intentional or unintentional fire followed by combined vehicle impact and air blast are at risk of significant damage and, possibly, collapse. Limited studies examining the complex effects of these extreme demands on bridge support elements and parametrizing their response and damage are found in the open literature. Research that is presented is part of an ongoing numerical investigation examining round, multi-column, reinforced concrete (RC), bridge pier behavior subject to multi-hazard scenarios involving fire, vehicle impact, and air blast. Detailed nonlinear finite element analysis models of single columns and multi-column piers supported by a pile foundation system …
New Features In Landyne 5 - A Software Suite For Materials Characterization And Crystallography By Transmission Electron Microscopy, Xing-Zhong Li
New Features In Landyne 5 - A Software Suite For Materials Characterization And Crystallography By Transmission Electron Microscopy, Xing-Zhong Li
Nebraska Center for Materials and Nanoscience: Faculty Publications
Landyne software suite (version 5) includes fifteen standalone computer programs for materials characterization and crystallography by transmission electron microscopy [1]. A launcher interface is provided for users to access all components conveniently. The purpose of this software suite is twofold: i) as research tools to analyze experimental results, ii) as teaching tools to explore the varieties of electron diffraction methods and crystallographic image processing principles.
The Landyne suite previously included: PTable, an interactive periodic table of elements; SVAT, a structural visual and analytical tool; SAED and PCED, simulation and analysis of electron diffraction (spot and ring) patterns; QSAED and QPCED, …
Structural, Electronic, And Magnetic Properties Of Cofevge-Based Compounds: Experiment And Theory, Parashu Kharel, Zachary Lehmann, Gavin Baker, Lukas Stuelke, Shah R. Valloppilly, Paul M. Shand, Pavel V. Lukashev
Structural, Electronic, And Magnetic Properties Of Cofevge-Based Compounds: Experiment And Theory, Parashu Kharel, Zachary Lehmann, Gavin Baker, Lukas Stuelke, Shah R. Valloppilly, Paul M. Shand, Pavel V. Lukashev
Nebraska Center for Materials and Nanoscience: Faculty Publications
We have carried out a combined theoretical and experimental investigation of both stoichiometric and nonstoichiometric CoFeVGe alloys. In particular, we have investigated CoFeVGe, Co1.25Fe0.75VGe, Co0.75Fe1.25VGe, and CoFe0.75VGe bulk alloys. Our first principles calculations suggest that all four alloys show ferromagnetic order, where CoFeVGe, Co1.25Fe0.75VGe, and Co0.75Fe1.25VGe are highly spin polarized with spin polarization values of over 80%. However, the spin polarization value of CoFe0.75VGe is only about 60%. We have synthesized all four samples using arc melting and high-vacuum annealing …
Tem Studies Of A New Modulated Structure In Mn2Rusn Alloy And Intermetallic Phases In Fe3+XCo3–XTi2 (X = 0, 1, 2, 3) Alloys, Xing-Zhong Li, Shah R. Valloppilly
Tem Studies Of A New Modulated Structure In Mn2Rusn Alloy And Intermetallic Phases In Fe3+XCo3–XTi2 (X = 0, 1, 2, 3) Alloys, Xing-Zhong Li, Shah R. Valloppilly
Nebraska Center for Materials and Nanoscience: Faculty Publications
Heusler compounds are a remarkable class of intermetallic materials with wide-ranging and tunable properties. The Mn2RuSn Heusler compound was reported as an L21B-type cubic phase, a = 0.62195 nm, distinguishing from the original L21 structure (or L21A-type). The L21B-type structure is a disordered variant of the inverse Heusler structure, XA-type (Prototype-CuHg2Ti, space group No. 216, F4–3m).
In our recent work [1], we observed a new modulated structure derived from the XA-type structure and its orthogonal domains in the Mn2RuSn Heusler alloy. The structural characterization was carried out …
Entropy-Driven Structural Transition From Tetragonal To Cubic Phase: High Thermoelectric Performance Of Cucdinse3 Compound, Tingting Luo, Yihao Hu, Shi Liu, Fanjie Xia, Junhao Qiu, Haoyang Peng, Keke Liu, Quansheng Guo, Xingzhong Li, Dongwang Yang, Xianli Su, Jinsong Wu, Xinfeng Tang
Entropy-Driven Structural Transition From Tetragonal To Cubic Phase: High Thermoelectric Performance Of Cucdinse3 Compound, Tingting Luo, Yihao Hu, Shi Liu, Fanjie Xia, Junhao Qiu, Haoyang Peng, Keke Liu, Quansheng Guo, Xingzhong Li, Dongwang Yang, Xianli Su, Jinsong Wu, Xinfeng Tang
Nebraska Center for Materials and Nanoscience: Faculty Publications
Cu based chalcopyrite is an important class of thermoelectric materials with excellent electronic properties, however, the thermal conductivity is relatively high due to the simple tetragonal structure with highly ordered configuration on cation sites, limiting the thermoelectric performance. Herein, we realize that the modulation of entropy via alloying CdSe achieves the structural transition from tetragonal structure with ordered configuration on cations sites in CuInSe2 compound to cubic CuCdInSe3. CuCdInSe3 crystallizes in a zinc blende (ZnS) structure where Cu, Cd and In cations randomly occupy the Zn site with the occupancy fraction 1/3. This entropy driven order-disorder …
An Interactive Simulation And Visualization Tool For Conventional And Aberration-Corrected Transmission Electron Microscopy, Xingzhong Li
An Interactive Simulation And Visualization Tool For Conventional And Aberration-Corrected Transmission Electron Microscopy, Xingzhong Li
Nebraska Center for Materials and Nanoscience: Faculty Publications
Contrast transfer function (CTF) is a vital function in transmission electron microscopy (TEM). It expresses to what extent amplitudes converted from the phase changes of the diffracted waves contribute to the TEM image, including the effects of lens aberrations. Simulation is very helpful to understand the application of the function thoroughly. In this work, we develop the CTFscope as a component in the Landyne software suite, to calculate the CTF with temporal and spatial dumping envelopes for conventional TEM and to extend it to various aberrations (up to fifth order) for aberration-corrected (AC)- TEM. It also includes effects on the …
Remote Surface Optical Phonon Scattering In Ferroelectric Ba0.6Sr0.4Tio3 Gated Graphene, Hanying Chen, Tianlin Li, Yifei Hao, Anil Rajapitamahuni, Zhiyong Xiao, Stefan Schoeche, Mathias Schubert, Xia Hong
Remote Surface Optical Phonon Scattering In Ferroelectric Ba0.6Sr0.4Tio3 Gated Graphene, Hanying Chen, Tianlin Li, Yifei Hao, Anil Rajapitamahuni, Zhiyong Xiao, Stefan Schoeche, Mathias Schubert, Xia Hong
Xia Hong Publications
We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba0.6Sr0.4TiO3 films, with field effect mobility up to 23,000 cm2 V−1 s−1 achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba0.6Sr0.4TiO3, from which we extract RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for …
Ultra-High Carrier Mobilities In Ferroelectric Domain Wall Corbino Cones At Room Temperature, Conor J. Mccluskey, Matthew G. Colbear, James P.V. Mcconville, Shane J. Mccartan, Jesi R. Maguire, Michele Conroy, Kalani Moore, Alan Harvey, Felix Trier, Ursel Bangert, Alexei Gruverman, Manuel Bibes, Amit Kumar, Raymong G.P. Mcquaid, J. Marty Gregg
Ultra-High Carrier Mobilities In Ferroelectric Domain Wall Corbino Cones At Room Temperature, Conor J. Mccluskey, Matthew G. Colbear, James P.V. Mcconville, Shane J. Mccartan, Jesi R. Maguire, Michele Conroy, Kalani Moore, Alan Harvey, Felix Trier, Ursel Bangert, Alexei Gruverman, Manuel Bibes, Amit Kumar, Raymong G.P. Mcquaid, J. Marty Gregg
Alexei Gruverman Publications
Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental aspects of conduction firmly established. Perhaps surprisingly, similar insights into conceptually much simpler conducting homointerfaces, such as the domain walls that separate regions of different orientations of electrical polarisation within the same ferroelectric band-insulator, are not nearly so well-developed. Addressing this disparity, we herein report magnetoresistance in approximately conical 180° charged domain walls, which occur in partially switched ferroelectric thin film single crystal lithium niobate. This system is ideal for such measurements: firstly, …
A Modulated Structure Derived From The Xa-Type Mn2Rusn Heusler Compound, Xingzhong Li, Wen-Yong Zhang, Ralph Skomski, David J. Sellmyer
A Modulated Structure Derived From The Xa-Type Mn2Rusn Heusler Compound, Xingzhong Li, Wen-Yong Zhang, Ralph Skomski, David J. Sellmyer
Nebraska Center for Materials and Nanoscience: Faculty Publications
A modulated structure derived from the inverse Heusler phase (the XA-type and the disordered variant L21B-type) has been observed in rapidly quenched Mn2RuSn ribbons. The powder X-ray diffraction pattern of the quenched ribbons can be indexed as an L21B-type structure. Electron diffraction patterns of the new structure mostly resemble those of the XA-type (and the disordered variant L21B-type) structure and additional reflections with denser spacing indicate a long periodicity. Orthogonal domains of the modulated structure were revealed by a selected-area electron diffraction pattern and the corresponding dark-field transmission electron microscopy images. The structure was …
Localization Effects And Anomalous Hall Conductivity In A Disordered 3d Ferromagnet, Paul M. Shand, Y. Moua, G. Baker, Shah R. Valloppilly, Pavel V. Lukashev, Parashu Kharel
Localization Effects And Anomalous Hall Conductivity In A Disordered 3d Ferromagnet, Paul M. Shand, Y. Moua, G. Baker, Shah R. Valloppilly, Pavel V. Lukashev, Parashu Kharel
Nebraska Center for Materials and Nanoscience: Faculty Publications
We have prepared the Heusler alloy CoFeV0.5Mn0.5Si in bulk form via arc melting. CoFeV0.5Mn0.5Si is ferromagnetic with a Curie temperature of 657 K. The longitudinal resistivity exhibits a minimum at 150 K, which is attributable to competition between quantum interference corrections at low temperatures and inelastic scattering at higher temperatures. The magnetoresistance (MR) is positive and nearly linear at low temperatures and becomes negative at temperatures close to room temperature. The positive MR in the quantum correction regime is evidence of the presence of the enhanced electron interaction as a contributor to …
What Happens When Transition Metal Trichalcogenides Are Interfaced With Gold?, Archit Dhingra, Dmitri E. Nikonov, Alexey Lipatov, Alexander Sinitskii, Peter Dowben
What Happens When Transition Metal Trichalcogenides Are Interfaced With Gold?, Archit Dhingra, Dmitri E. Nikonov, Alexey Lipatov, Alexander Sinitskii, Peter Dowben
Peter Dowben Publications
Transition metal trichalcogenides (TMTs) are two-dimensional (2D) systems with quasi-one-dimensional (quasi-1D) chains. These 2D materials are less susceptible to undesirable edge defects, which enhances their promise for low-dimensional optical and electronic device applications. However, so far, the performance of 2D devices based on TMTs has been hampered by contact-related issues. Therefore, in this review, a diligent effort has been made to both elucidate and summarize the interfacial interactions between gold and various TMTs, namely, In4Se3, TiS3, ZrS3, HfS3, and HfSe3. X-ray photoemission spectroscopy data, supported by the results …
Voltage Controlled Néel Vector Rotation In Zero Magnetic Field, Ather Mahmood, Will Echtenkamp, Mike Street, Jun Lei Wang, Shi Cao, Takashi Komesu, Peter Dowben, Pratyush Buragohain, Haidong Lu, Alexei Gruverman, Arun Parthasarathy, Shaloo Rakheja, Christian Binek
Voltage Controlled Néel Vector Rotation In Zero Magnetic Field, Ather Mahmood, Will Echtenkamp, Mike Street, Jun Lei Wang, Shi Cao, Takashi Komesu, Peter Dowben, Pratyush Buragohain, Haidong Lu, Alexei Gruverman, Arun Parthasarathy, Shaloo Rakheja, Christian Binek
Peter Dowben Publications
Multi-functional thin films of boron (B) doped Cr2O3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr2O3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse …
Magnetic Field Perturbations To A Soft X-Ray-Activated Fe (Ii) Molecular Spin State Transition, Guanhua Hao, Alpha T. N’Diaye, Thilini K. Ekanayaka, Ashley S. Dale, Xuanyuan Jiang, Esha Mishra, Corbyn Mellinger, Saeed Yazdani, John W. Freeland, Jian Zhang, Ruihua Cheng, Xiaoshan Xu, Peter Dowben
Magnetic Field Perturbations To A Soft X-Ray-Activated Fe (Ii) Molecular Spin State Transition, Guanhua Hao, Alpha T. N’Diaye, Thilini K. Ekanayaka, Ashley S. Dale, Xuanyuan Jiang, Esha Mishra, Corbyn Mellinger, Saeed Yazdani, John W. Freeland, Jian Zhang, Ruihua Cheng, Xiaoshan Xu, Peter Dowben
Peter Dowben Publications
The X-ray-induced spin crossover transition of an Fe (II) molecular thin film in the presence and absence of a magnetic field has been investigated. The thermal activation energy barrier in the soft X-ray activation of the spin crossover transition for [Fe{H2B(pz)2 }2 (bipy)] molecular thin films is reduced in the presence of an applied magnetic field, as measured through X-ray absorption spectroscopy at various temperatures. The influence of a 1.8 T magnetic field is sufficient to cause deviations from the expected exponential spin state transition behavior which is measured in the field free case. We find …
Corrigendum: Surface Termination And Schottky-Barrier Formation Of In4Se3(001) [Semiconductor Science And Technology (2020) 35 (065009) Doi: 10.1088/1361-6641/Ab7e45], Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai-Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter Dowben
Corrigendum: Surface Termination And Schottky-Barrier Formation Of In4Se3(001) [Semiconductor Science And Technology (2020) 35 (065009) Doi: 10.1088/1361-6641/Ab7e45], Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai-Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter Dowben
Peter Dowben Publications
Through the description of various surface terminations, the chain direction of In4Se3 in this paper [1] is implied to be in the plane of its surface. Even though the common convention for photoemission spectroscopy is to place z-axis along the surface normal, the axis perpendicular to the growth direction for this indium selenide is the crystallographic a-axis (and not the c-axis) [2–4]. Therefore, in our work the surface of In4Se3 should have been labeled (100), and not (001), to prevent any confusion that may have resulted from a less than conventional index notation. Data availability statement The data that support …
Colossal Intrinsic Exchange Bias From Interfacial Reconstruction In Epitaxial Cofe2 O4/Al2 O3 Thin Films, Detian Yang, Yu Yun, Arjun Subedi, Nicholas E. Rogers, David M. Cornelison, Peter Dowben, Xiaoshan Xu
Colossal Intrinsic Exchange Bias From Interfacial Reconstruction In Epitaxial Cofe2 O4/Al2 O3 Thin Films, Detian Yang, Yu Yun, Arjun Subedi, Nicholas E. Rogers, David M. Cornelison, Peter Dowben, Xiaoshan Xu
Peter Dowben Publications
We have studied the epitaxial CoFe2O4 (111) films grown on Al2O3 (0001) substrates of different thickness at various temperature and discovered colossal intrinsic exchange bias up to 7 ± 2 kOe. X-ray and electron diffraction clearly indicate an interfacial layer about 2 nm of different crystal structure from the “bulk” part of the CoFe2O4 film. The thickness dependence of the exchange bias suggests a hidden antiferromagnetic composition in the interfacial layer that couples to the ferrimagnetic “bulk” part of the CoFe2O4 film as the origin of the exchange …
Magnetism And Topological Hall Effect In Antiferromagnetic Ru2Mnsn-Based Heusler Compounds, Wenyong Zhang, Balamurugan Balasubramanian, Yang Sun, Ahsan Ullah, Ralph Skomski, Rabindra Pahari, Shah R. Valloppilly, Xingzhong Li, Cai-Zhuang Wang, Kai-Ming Ho, David J. Sellmyer
Magnetism And Topological Hall Effect In Antiferromagnetic Ru2Mnsn-Based Heusler Compounds, Wenyong Zhang, Balamurugan Balasubramanian, Yang Sun, Ahsan Ullah, Ralph Skomski, Rabindra Pahari, Shah R. Valloppilly, Xingzhong Li, Cai-Zhuang Wang, Kai-Ming Ho, David J. Sellmyer
Nebraska Center for Materials and Nanoscience: Faculty Publications
Heusler compounds and alloys based on them are of great recent interest because they exhibit a wide variety of spin structures, magnetic properties, and electron-transport phenomena. Their properties are tunable by alloying and we have investigated L21-ordered compound Ru2MnSn and its alloys by varying the atomic Mn:Sn composition. While antiferromagnetic ordering with a Néel temperature of 361 K was observed in Ru2MnSn, the Mn-poor Ru2Mn0.8Sn1.2 alloy exhibits properties of a diluted antiferromagnet in which there are localized regions of uncompensated Mn spins. Furthermore, a noncoplanar spin structure, evident from …
Voltage-Controlled Magnetic Anisotropy In Antiferromagnetic Mgo-Capped Mnpt Films, P. H. Chang, Wuzhang Fang, T. Ozaki, Kirill Belashchenko
Voltage-Controlled Magnetic Anisotropy In Antiferromagnetic Mgo-Capped Mnpt Films, P. H. Chang, Wuzhang Fang, T. Ozaki, Kirill Belashchenko
Kirill Belashchenko Publications
The magnetic anisotropy in MgO-capped MnPt films and its voltage control are studied using first-principles calculations. Sharp variation of the magnetic anisotropy with film thickness, especially in the Pt-terminated film, suggests that it may be widely tuned by adjusting the film thickness. In thick films the linear voltage control coefficient is as large as 1.5 and -0.6 pJ/Vm for Pt-terminated and Mn-terminated interfaces, respectively. The combination of a widely tunable magnetic anisotropy energy and a large voltage-control coefficient suggest that MgO-capped MnPt films can serve as a versatile platform for magnetic memory and antiferromagnonic applications.
Correction To "Quantitative Study Of The Energy Changes In Voltage-Controlled Spin Crossover Molecular Thin Films" [The Journal Of Physical Chemistry Letters (2020) 11:19 (8231-8237) Doi: 10.1021/Acs.Jpclett.0c02209], Aaron Mosey, Ashley S. Dale, Guanhua Hao, Alpha N'Diaye, Peter Dowben, Ruihua Cheng
Correction To "Quantitative Study Of The Energy Changes In Voltage-Controlled Spin Crossover Molecular Thin Films" [The Journal Of Physical Chemistry Letters (2020) 11:19 (8231-8237) Doi: 10.1021/Acs.Jpclett.0c02209], Aaron Mosey, Ashley S. Dale, Guanhua Hao, Alpha N'Diaye, Peter Dowben, Ruihua Cheng
Peter Dowben Publications
In our recent publication, Figure 5 was published without adequate due diligence. The correct TOC Abstract graphic and Figure 5 are contained here in this correction. The correct on to off current ratios are in the range of 4 to 5, not 100 and the signal to noise ratios are far less than previously shown.
Nonvolatile Voltage Controlled Molecular Spin‐State Switching For Memory Applications, Thilini K. Ekanayaka, Guanhua Hao, Aaron Mosey, Ashley S. Dale, Xuanyuan Jiang, Andrew J. Yost, Keshab R. Sapkota, George T. Wang, Jian Zhang, Alpha T. N’Diaye, Andrew Marshall, Ruihua Cheng, Azad Naeemi, Xiaoshan Xu, Peter Dowben
Nonvolatile Voltage Controlled Molecular Spin‐State Switching For Memory Applications, Thilini K. Ekanayaka, Guanhua Hao, Aaron Mosey, Ashley S. Dale, Xuanyuan Jiang, Andrew J. Yost, Keshab R. Sapkota, George T. Wang, Jian Zhang, Alpha T. N’Diaye, Andrew Marshall, Ruihua Cheng, Azad Naeemi, Xiaoshan Xu, Peter Dowben
Peter Dowben Publications
Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy = 2,20-bipyridine, voltage-controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, …
Remote Mesoscopic Signatures Of Induced Magnetic Texture In Graphene, N. Arabchigavkani, R. Somphonsane, H. Ramamoorthy, G. He, J. Nathawat, S. Yin, B. Barut, K. He, M. D. Randle, R. Dixit, K. Sakanashi, N. Aoki, K. Zhang, L. Wang, W. N. Mei, Peter Dowben, J. Fransson, J. P. Bird
Remote Mesoscopic Signatures Of Induced Magnetic Texture In Graphene, N. Arabchigavkani, R. Somphonsane, H. Ramamoorthy, G. He, J. Nathawat, S. Yin, B. Barut, K. He, M. D. Randle, R. Dixit, K. Sakanashi, N. Aoki, K. Zhang, L. Wang, W. N. Mei, Peter Dowben, J. Fransson, J. P. Bird
Peter Dowben Publications
Mesoscopic conductance fluctuations are a ubiquitous signature of phase-coherent transport in small conductors, exhibiting universal character independent of system details. In this Letter, however, we demonstrate a pronounced breakdown of this universality, due to the interplay of local and remote phenomena in transport. Our experiments are performed in a graphene-based interaction-detection geometry, in which an artificial magnetic texture is induced in the graphene layer by covering a portion of it with a micromagnet. When probing conduction at some distance from this region, the strong influence of remote factors is manifested through the appearance of giant conductance fluctuations, with amplitude much …
Surface Acoustic Waves Increase Magnetic Domain Wall Velocity, Anil Adhikari, Shireen Adenwalla
Surface Acoustic Waves Increase Magnetic Domain Wall Velocity, Anil Adhikari, Shireen Adenwalla
Shireen Adenwalla Papers
Domain walls in magnetic thin films are being explored for memory applications and the speed at which they move has acquired increasing importance. Magnetic fields and currents have been shown to drive domain walls with speeds exceeding 500 m/s. We investigate another approach to increase domain wall velocities, using high frequency surface acoustic waves to create standing strain waves in a 3 micron wide strip of magnetic film with perpendicular anisotropy. Our measurements, at a resonant frequency of 248.8 MHz, indicate that domain wall velocities increase substantially, even at relatively low applied voltages. Our findings suggest that the strain wave …
Ultrafast Spin-Currents And Charge Conversion At 3d-5d Interfaces Probed By Time-Domain Terahertz Spectroscopy, T. H. Dang, J. Hawecker, E. Rongione, G. Baez Flores, D. Q. To, J. C. Rojas-Sanchez, H. Nong, J. Mangeney, J. Tignon, F. Godel, S. Collin, P. Seneor, M. Bibes, A. Fert, M. Anane, J. M. George, L. Vila, M. Cosset-Cheneau, D. Dolfi, R. Lebrun, P. Bortolotti, Kirill Belashchenko, S. Dhillon, H. Jaffrès
Ultrafast Spin-Currents And Charge Conversion At 3d-5d Interfaces Probed By Time-Domain Terahertz Spectroscopy, T. H. Dang, J. Hawecker, E. Rongione, G. Baez Flores, D. Q. To, J. C. Rojas-Sanchez, H. Nong, J. Mangeney, J. Tignon, F. Godel, S. Collin, P. Seneor, M. Bibes, A. Fert, M. Anane, J. M. George, L. Vila, M. Cosset-Cheneau, D. Dolfi, R. Lebrun, P. Bortolotti, Kirill Belashchenko, S. Dhillon, H. Jaffrès
Kirill Belashchenko Publications
Spintronic structures are extensively investigated for their spin-orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-Transition metal interfaces due to their inverse spin-Hall effect properties. In particular, the intrinsic inverse spin-Hall effect of Pt-based systems and extrinsic inverse spin-Hall effect of Au:W and Au:Ta in NiFe/Au:(W,Ta) bilayers are investigated. The spin-charge conversion is probed by complementary techniques-ultrafast THz time-domain spectroscopy in the dynamic regime for THz pulse emission and ferromagnetic resonance spin-pumping …
The Importance Of Frontier Orbital Symmetry In The Adsorption Of Diiodobenzene On Mos2(0001), Prescott E. Evans, Zahra Hooshmand, Talat S. Rahman, Peter Dowben
The Importance Of Frontier Orbital Symmetry In The Adsorption Of Diiodobenzene On Mos2(0001), Prescott E. Evans, Zahra Hooshmand, Talat S. Rahman, Peter Dowben
Peter Dowben Publications
Evidence of a role of frontier orbital symmetry, in the adsorption process of diiodobenzene on MoS2(0001), appears in the huge differences in the rate of adsorption between 1,3-diiodobenzene, 1,2-diiodobenzene and 1,4-diiodobenzene isomers on MoS2. Experiments indicate that the rate of adsorption of 1,3-diiodobenzene on MoS2(0001) is much greater than that of the 1,2-diodobenzene and 1,4-diiodbenzene isomers. As the differences in calculated diiodobenzene isomer-MoS2 system adsorption energies and electron affinities are negligible, frontier orbital symmetry appears to play a significant role in diiodobenzene adsorption on MoS2(0001). The experimental and theory results, in combination, suggest …
Proximity-Induced Magnetization In Graphene: Towards Efficient Spin Gating, Mihovil Bosnar, Ivor Lončarić, P. Lazić, Kirill Belashchenko, Igor Žutić
Proximity-Induced Magnetization In Graphene: Towards Efficient Spin Gating, Mihovil Bosnar, Ivor Lončarić, P. Lazić, Kirill Belashchenko, Igor Žutić
Kirill Belashchenko Publications
Gate-tunable spin-dependent properties could be induced in graphene at room temperature through the magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate makes gating ineffective, an intervening passivation layer is needed. Previously considered passivation layers result in a large shift of the Dirac point away from the Fermi level, so that unrealistically large gate fields are required to tune the spin polarization in graphene (Gr). We show that a monolayer of Au or Pt used as the passivation layer between Co and graphene brings the Dirac point closer to …
Detection Of Uncompensated Magnetization At The Interface Of An Epitaxial Antiferromagnetic Insulator, Pavel N. Lapa, Min Han Lee, Igor V. Roshchin, Kirill Belashchenko, Ivan K. Schuller
Detection Of Uncompensated Magnetization At The Interface Of An Epitaxial Antiferromagnetic Insulator, Pavel N. Lapa, Min Han Lee, Igor V. Roshchin, Kirill Belashchenko, Ivan K. Schuller
Kirill Belashchenko Publications
We have probed directly the temperature and magnetic field dependence of pinned uncompensated magnetization at the interface of antiferromagnetic FeF2 with Cu, using FeF2-Cu-Co spin valves. Electrons polarized by the Co layer are scattered by the pinned uncompensated moments at the FeF2-Cu interface giving rise to giant magnetoresistance. We determined the direction and magnitude of the pinned uncompensated magnetization at different magnetic fields and temperatures using the angular dependencies of resistance. The strong FeF2 anisotropy pins the uncompensated magnetization along the easy axis independent of the cooling field orientation. Most interestingly, magnetic fields as …
Reinvestigation Of The Intrinsic Magnetic Properties Of (Fe1-Xcox)2b Alloys And Crystallization Behavior Of Ribbons, Tej Nath Lamichhane, Olena Palasyuk, Vladimir P. Antropov, Ivan A. Zhuravlev, Kirill Belashchenko, Ikenna C. Nlebedim, Kevin W. Dennis, Anton Jesche, Matthew J. Kramer, Sergey L. Bud'ko, R. William Mccallum, Paul C. Canfield, Valentin Taufour
Reinvestigation Of The Intrinsic Magnetic Properties Of (Fe1-Xcox)2b Alloys And Crystallization Behavior Of Ribbons, Tej Nath Lamichhane, Olena Palasyuk, Vladimir P. Antropov, Ivan A. Zhuravlev, Kirill Belashchenko, Ikenna C. Nlebedim, Kevin W. Dennis, Anton Jesche, Matthew J. Kramer, Sergey L. Bud'ko, R. William Mccallum, Paul C. Canfield, Valentin Taufour
Kirill Belashchenko Publications
New determination of the magnetic anisotropy from single crystals of (Fe1-xCox)2B alloys are presented. The anomalous temperature dependence of the anisotropy constant is discussed using the standard Callen-Callen theory, which is shown to be insufficient to explain the experimental results. A more material specific study using first-principles calculations with disordered moments approach gives a much more consistent interpretation of the experimental data. Since the intrinsic properties of the alloys with x=0.3-0.35 are promising for permanent magnets applications, initial investigation of the extrinsic properties are described, in particular the crystallization of melt spun ribbons with Cu, Al, …