Engineering Physics Commons^™

Designing Enhanced Nonlinearity In Plasmonic Devices With Epsilon-Near-Zero Films, Kevin Tran Le

Electrical Engineering and Computer Science (MS) Theses

The growing demand for energy-efficient optical information processing motivates compact nonlinear photonic devices that can operate at low power. Silicon photonics is a mature platform for linear optical functions, but nonlinear operation remains challenging because of its weak Kerr response, two-photon absorption at telecommunication wavelengths, and limited compatibility with deeply subwavelength plasmonic confinement. This thesis computationally investigates epsilon-near-zero thin films integrated into plasmonic waveguide architectures as a route toward stronger light–matter interaction in compact nonlinear devices.

Two waveguide geometries are examined: a hybrid metal-insulator-metal plasmonic slab waveguide incorporating an ultrathin indium tin oxide epsilon-near-zero layer (5–50 nm), and a dielectric-loaded …

Effect Of Fabrication Parameters On The Ferroelectricity Of Hafnium Zirconium Oxide Films: A Statistical Study, Guillermo A. Salcedo, Ahmad E. Islam, Elizabeth Reichley, Michael Dietz, Christine M. Schubert Kabban, Kevin D. Leedy, Tyson C. Back, Weison Wang, Andrew Green, Timothy S. Wolfe, James M. Sattler

Faculty Publications

Ferroelectricity in hafnium zirconium oxide (Hf_1−xZr_xO₂) and the factors that impact it have been a popular research topic since its discovery in 2011. Although the general trends are known, the interactions between fabrication parameters and their effect on the ferroelectricity of Hf_1−xZr_xO₂ require further investigation. In this paper, we present a statistical study and a model that relates Zr concentration (x), film thickness (t_f), and annealing temperature (T_a) with the remanent polarization (P_r) in tungsten (W)-capped Hf_1−xZr_xO₂. …

Direct Current Magnetic Hall Probe Technique For Measurement Of Field Penetration In Thin Film Superconductors For Superconducting Radio Frequency Resonators, Iresha Harshani Senevirathne, Alex Gurevich, Jean Delayen

Physics Faculty Publications

Superconducting Radio Frequency (SRF) cavities used in particle accelerators are typically formed from or coated with superconducting materials. Currently, high purity niobium is the material of choice for SRF cavities that have been optimized to operate near their theoretical field limits. This brings about the need for significant R & D efforts to develop next generation superconducting materials that could outperform Nb and keep up with the demands of new accelerator facilities. To achieve high quality factors and accelerating gradients, the cavity material should be able to remain in the superconducting Meissner state under a high RF magnetic field without …

Investigation Of Mnxni1-Xo Thin Films Using Pulsed Laser Deposition, Md Ashif Anwar

Graduate Theses/Dissertations

The exchange bias (EB) effect, especially in nanomaterials, is highly promising for use in antiferromagnet-based spintronics applications. NiO is a well known antiferromagnetic material with a high Néel temperature (525K) and can exhibit ferromagnetism/ ferrimagnetism by adding other magnetic transition elements. Our previous work has shown that the antiferromagnetic characteristics of conventional NiO insulating nanostructured material can be altered to have substantial ferrimagnetic characteristics by doping NiO with Mn or Co. Pulsed laser deposition (PLD) was used to grow heterostructures comprised of a nanostructured thin NiO film deposited on the surface of a MgO (100) and Al₂O_{3 …}

Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza

Electrical & Computer Engineering Faculty Publications

Hydrogenated silicon (Si:H) thin films have been prepared by radio frequency (RF) magnetron sputtering. The effect of hydrogen gas concentration during sputtering on the resultant film structural and optical properties has been investigated by real time spectroscopic ellipsometry (RTSE) and grazing incidence x-ray diffraction (GIXRD). The analysis of in-situ RTSE data collected during sputter deposition tracks the evolution of surface roughness and film bulk layer thickness with time. Growth evolution diagrams depicting amorphous, nanocrystalline and mixed-phase regions for low and high deposition rate Si:H are constructed and the effects of process parameter (hydrogen gas concentration, total pressure and RF power) …

Improved Terahertz Modulation Using Germanium Telluride (Gete) Chalcogenide Thin Films, Alexander H. Gwin, Christopher H. Kodama, Tod V. Laurvick, Ronald Coutu Jr., Philip F. Taday

Faculty Publications

We demonstrate improved terahertz (THz) modulation using thermally crystallized germanium telluride (GeTe) thin films. GeTe is a chalcogenide material that exhibits a nonvolatile, amorphous to crystalline phase change at approximately 200 °C, as well as six orders of magnitude decreased electrical resistivity. In this study, amorphous GeTe thin films were sputtered on sapphire substrates and then tested using THz time-domain spectroscopy (THz-TDS). The test samples, heated in-situ while collecting THz-TDS measurements, exhibited a gradual absorbance increase, an abrupt nonvolatile reduction at the transition temperature, followed by another gradual increase in absorbance. The transition temperature was verified by conducting similar thermal …

Synthesis And Optimization Of Vo₂ Thin Films For Phase Transition Applications By Atomic Layer Deposition And Rf Magnetron Sputtering, Madhavi Tangirala

Electrical & Computer Engineering Theses & Dissertations

Among many Vanadium oxides and suboxides, VO₂ has received considerable attention due to its remarkable metal-insulator transition (MIT) or semiconductor-metal transition (SMT) behavior, a reversible change in its electrical and optical properties that occurs due to a phase transition near a temperature of 68°C. Electrically, the resistivity of VO₂ can be changed as large as 4-5 orders of magnitude. Optically, the transmittance drops dramatically above the transition temperature in the metallic state where the VO₂ film becomes highly reflective in the infrared region. All these properties result in structural phase transformation from a low temperature monoclinic to …

Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers

Faculty Publications

High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a “library” sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same “library” sample, they can be highly uniform with respect to …

Improving The Efficiency Of Organic Solar Cells By Varying The Material Concentration In The Photoactive Layer, Kevin Anthony Latimer

Electrical & Computer Engineering Theses & Dissertations

Polymer-fullerene bulk heterojunction solar cells have been a rapidly improving technology over the past decade. To further improve the relatively low energy conversion efficiencies of these solar cells, several modifications need to be made to the overall device structure. Emerging technologies include cells that are fabricated with interfacial layers to facilitate charge transport, and tandem structures are being introduced to harness the absorption spectrum of polymers with varying bandgap energies.

When new structures are implemented, each layer of the cell must be optimized in order for the entire device to function efficiently. The most volatile layer of these devices is …

Growth Of Alkali Antimonide Photosensitive Thin Films, George Annobil

Electrical & Computer Engineering Theses & Dissertations

The experiment performed in this research addresses the growth of an alkali antimonide photosensitive film. Research was conducted to understand and develop a growth technique for a unique vapor deposition system in a vacuum environment. Specifically, the grown film will be utilized as a photocathode, and hence quantum efficiency (QE) and photocathode lifetime measurements are conducted. The research presents the successful growth of the binary compound cesium antimonide with achieved quantum efficiency of ~0.07% at ~240V anode bias. This experimental result demonstrated that the deposition technique was reliable in producing a feasible cathode. It further allowed the verification of theoretical …

Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac

Electrical & Computer Engineering Faculty Publications

γ-In[sub 2]Se[sub 3] thin film are deposited for various substrate temperatures in the range of 523–673 K. This study shows that at 573 and 673 K the thin films are well crystallized with grains aligned along the c axis. Between these temperatures, a domain of instability appears where the γ-In[sub 2]Se[sub 3] thin films have a randomly orientation and the c-lattice parameter increases. The presence of the metastable phase κ-In[sub 2]Se[sub 3], during the growth, can explain the existence of this domain of instability. The insertion of Zn during the preparation process allows us to stabilize the phase κ at …

Reflection-High Energy Electron Diffraction Study Of Si(100) Homoepitaxy By Femtosecond Pulsed Laser Deposition, Mohammed S. Hegazy

Electrical & Computer Engineering Theses & Dissertations

The dynamics of femtosecond pulsed laser deposition (fsPLD) of Si(!00)-1 x I and Si(!00)-2x I homoepitaxy are studied by in situ reflection high-energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM). The effects of substrate temperature, laser fluence and the pressure of a passive gas on the Si(!00)-1 x I growth mode are discussed. It is shown that films grow following the Volmer-Weber (3D) growth mode. The substrate temperature largely affects the morphology of the grown film. Below ~ 400 °C (at laser fluence of~ 1.9 J/cm²), randomly oriented 3D clusters are grown. This is shown …

Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman

Electrical & Computer Engineering Faculty Publications

CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. …

Low‐Cost Technique For Preparing N‐Sb2S3/P‐Si Heterojunction Solar Cells, O. Savadogo, K. C. Mandal

Faculty Publications

No abstract provided.

Determination Of The Optical Properties Of Organic Thin Films By Spectroscopic Ellipsometry, Mark L. Sward

Theses and Dissertations

This thesis demonstrated the feasibility of determining the optical properties of organic and polymer thin films through the use of Spectroscopic Ellipsometry (SE). Tan Psi and cos Delta data from 300-800 nanometers (NM) were taken with a Rudolph Research s2000 spectroscopic ellipsometer four samples: indium tin oxide (ITO) coated glass; five layer poly-benzyl-L glutamate (PBLG) organic film on ITO coated glass; eight layer PBLG film on ITO coated glass; and a thiophene polymer film on a microscope slide. The data sets were fit to a choice of four computer models based on a paper written by Dwight Berreman in 1972. …