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Electronic Devices and Semiconductor Manufacturing Commons

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Characterization And Testing Of A 5.8 Kv Sic Pin Diode For Electric Space Propulsion Applications, Alexandra Toftul 2014 University of Nebraska - Lincoln

Characterization And Testing Of A 5.8 Kv Sic Pin Diode For Electric Space Propulsion Applications, Alexandra Toftul

Electrical Engineering Theses and Dissertations

Inductive Pulsed Plasma Thrusters (IPPTs) are a type of in-space propulsion that has multiple advantages over conventional chemical propulsion for long-duration, deep space missions. Existing IPPT prototypes utilize spark gap switches, however these are subject to corrosion problems that make them unreliable for long-term use. Recent advances in solid state switching technology have opened up a variety of switching options that could provide greater reliability, controllability, and increased energy efficiency. Taking advantage of this, a novel thruster drive circuit topology containing a high-power silicon controlled rectifier (SCR) and series fast recovery diode (FRD) is proposed that is expected to increase ...


Rapid Battery Exchange Safety And Sensing, Ben John Froelich, Isaac Sungjin Kim 2014 California Polytechnic State University

Rapid Battery Exchange Safety And Sensing, Ben John Froelich, Isaac Sungjin Kim

Electrical Engineering

The Rapid Battery Exchange system (RBX) swaps batteries in an electric van, allowing almost continuous operation of the vehicle. The RBX system is designed and built by The Cal Poly Electric Vehicle Engineering Club (EVEC). The system includes the exchange ramp, two battery packs, and the electric “G-Van.” While the vehicle drives using one of the battery packs, the other pack charges in the exchange ramp. When the van’s battery depletes, it drives onto the ramp and swaps the dead battery for the charged one, and the process repeats.

The RBX battery pack safety and sensing project divides into ...


Low Voltage Cmos Sar Adc Design, Ryan Hunt 2014 California Polytechnic State University

Low Voltage Cmos Sar Adc Design, Ryan Hunt

Electrical Engineering

This project centers on the design of a single ended 10-bit successive approximation register analog to digital converter (SAR ADC for short) that easily interfaces to a micro-controller, such as an Arduino. With micro-controller interfacing in mind, the universal data transfer technique of SPI proved an easy way to communicate between the ADC and the micro-controller. The ADC has a range of 1V (highest code value) to 0V (lowest code value) and operates from a single voltage rail value of 1.8V. Typical SPI clock speeds run on the order of 2MHz and with a 10-bit ADC this means a ...


An Investigation Into The Role Of Energy And Symmetry At Epitaxial Interfaces, Gabriel A. Devenyi 2014 McMaster University

An Investigation Into The Role Of Energy And Symmetry At Epitaxial Interfaces, Gabriel A. Devenyi

Open Access Dissertations and Theses

Epitaxy is a key technological process for the production of thin films and nanostructures for electronic and optoelectronic devices. The epitaxial process has been traditionally studied through the lens of lattice-matched and chemically similar material systems, specifically the III-V quaternary material systems. This work investigates the role energy and symmetry play at epitaxial interfaces for cases far different than those of typical epitaxy. In the realm of energy, the impact of chemically dissimilar epitaxial interfaces was investigated, specifically between semiconductors and oxides, noble metals and oxides, and polar-on-nonpolar epitaxy. For symmetry at epitaxial interfaces, the role of symmetry breaking, through ...


Surface Analysis Of Materials For Direct Wafer Bonding, Arif Ul Alam 2014 McMaster University

Surface Analysis Of Materials For Direct Wafer Bonding, Arif Ul Alam

Open Access Dissertations and Theses

Surface preparation and its exposure to different processing conditions is a key step in heterogeneous integration of electronics, photonics, fluidics and/or mechanical components for More-than-Moore applications. Therefore, it is critical to understand how various processing and environmental conditions affect the surface properties of bonding substrates. In this thesis, the effects of oxygen reactive-ion etching (O2 RIE) plasma followed by storage in ambient and 98% relative humidity on some key surface properties such as roughness, water contact angle, hardness, and the elemental and compositional states of three materials – silicon (Si), silicon dioxide (SiO2) and glass – are investigated to ...


Investigation Of Degradation Effects Due To Gate Stress In Gan-On-Si High Electron Mobility Transistors Through Analysis Of Low Frequency Noise, Michael Curtis Meyer Masuda 2014 California Polytechnic State University

Investigation Of Degradation Effects Due To Gate Stress In Gan-On-Si High Electron Mobility Transistors Through Analysis Of Low Frequency Noise, Michael Curtis Meyer Masuda

Master's Theses and Project Reports

Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike traditional semiconductor devices, the GaN HEMT channel region is undoped and relies on the piezoelectric effect created at the GaN and Aluminum Gallium Nitride (AlGaN) heterojunction to create a conduction channel in the form of a quantum well known as the two dimensional electron gas (2DEG). Because the GaN HEMTs are undoped, these devices have higher electron mobility crucial for ...


Reactive Magnetron Sputtering As A Growth Alternative For Gallium Nitride Nanowires, Nikolaus A. Jewell 2014 McMaster University

Reactive Magnetron Sputtering As A Growth Alternative For Gallium Nitride Nanowires, Nikolaus A. Jewell

Open Access Dissertations and Theses

Gallium nitride (GaN) nanowires are high-performance materials with wide, direct bandgaps and superior electronic properties. Although their properties make them of great interest for next-generation technologies, widespread adoption has been limited by expensive production processes. Here, the results of growing GaN nanowires via DC magnetron sputtering at different temperatures and using different metal catalysts are reported.

A new substrate heater was designed to minimize contamination from the heater filament and increase the substrate temperature window to in excess of 800°C. Sixteen-mm2 (111) silicon samples had one-to-four nm of a metal catalyst deposited on them using evaporation. This metal ...


An Experimental Investigation Of Hot Switching Contact Damage In Rf Mems Switches, Anirban Basu 2014 Northeastern University

An Experimental Investigation Of Hot Switching Contact Damage In Rf Mems Switches, Anirban Basu

Electrical Engineering Dissertations

RF MEMS switches have been shown to have better performance than their solid state counterparts on account of their low insertion loss and high isolation. Despite their superiority, these switches suffer from several reliability issues which limit their lifetime when compared with p-i-n diodes and GaAs FET switches. One of the major reliability issues is the reduction in lifetime of these switches when switched under hot switching conditions i.e. when a DC voltage or RF signal is applied across the contact while it is switching from an off to on position or vice versa. In this work, contact damage ...


A Multi-Physics Computational Approach To Simulating Thz Photoconductive Antennas With Comparison To Measured Data And Fabrication Of Samples, Darren Ray Boyd 2014 University of Kentucky

A Multi-Physics Computational Approach To Simulating Thz Photoconductive Antennas With Comparison To Measured Data And Fabrication Of Samples, Darren Ray Boyd

Theses and Dissertations--Electrical and Computer Engineering

The frequency demands of radiating systems are moving into the terahertz band with potential applications that include sensing, imaging, and extremely broadband communication. One commonly used method for generating and detecting terahertz waves is to excite a voltage-biased photoconductive antenna with an extremely short laser pulse. The pulsed laser generates charge carriers in a photoconductive substrate which are swept onto the metallic antenna traces to produce an electric current that radiates or detects a terahertz band signal. Therefore, analysis of a photoconductive antenna requires simultaneous solutions of both semiconductor physics equations (including drift-diffusion and continuity relations) and Maxwell’s equations ...


Switched-Capacitor Voltage Doubler Design Using 0.5 Μm Technology, Hanfeng Wang 2014 Rochester Institute of Technology

Switched-Capacitor Voltage Doubler Design Using 0.5 Μm Technology, Hanfeng Wang

Theses

While integrated circuit (IC) power management has been an eternal topic for chip designers, inductor based DC-DC converters have been dominant in the field for years. However, because of the natures of inductors: large electro-magnetic interference, high coupling noise, and difficult silicon fabrication process, they are not favorable to on-chip solutions. Switched-capacitor (SC) DC-DC converters, which adopt capacitors for their energy storage components, have become increasingly popular among both the academia and the industry, because, apparently, they avoid the drawbacks of the inductor counterparts, and can be directly implemented on-chip without additional fabrication process.

In this paper, we will investigate ...


Physical Design Of A Smart Camera With Integrated Digital Pixel Sensors Using A 0.13Μm 8-Layer Metal Cmos Process, Mahir K. Gharzai 2013 University of Nebraska - Lincoln

Physical Design Of A Smart Camera With Integrated Digital Pixel Sensors Using A 0.13Μm 8-Layer Metal Cmos Process, Mahir K. Gharzai

Electrical Engineering Theses and Dissertations

The design of cameras has historically kept imagery and computational circuitry isolated in an attempt to maximize image quality by improving pixel pitch and routing density. Although this technique has worked in creating high density arrays of pixels for large resolution imagers, it has never been able to achieve high framerate computational operations.

A radical approach is introduced to solve this dilemma by creating compact, low- power pixel elements with built-in analog-to-digital converters that directly interface with digital logic. These pixels are capable of integrating alongside logic cells and to create an array of pixels inside the processor that can ...


A Sige Bicmos Lvds Driver For Space-Borne Applications, Matthew Ian Laurence 2013 University of Tennessee, Knoxville

A Sige Bicmos Lvds Driver For Space-Borne Applications, Matthew Ian Laurence

Masters Theses

When designing an integrated circuit for use during an interstellar mission, certain precautions must be made. The electronics on any off-earth mission will be exposed to wide temperature swings and harmful radiation due to being outside of the Earth’s protective ionosphere. It is crucial that any data path present be immune to these detrimental effects.

The introduction of galactic radiation can not only cause the onboard electronics to fail due to device degradation and single event latchup but can also lead to background radiation being coupled into the signal path as unwanted noise, degrading the signal to noise ratio ...


Limiting And Transient Performances Of A Low Loss Pin-Schottky Limiter, Chin-Leong Lim 2013 SelectedWorks

Limiting And Transient Performances Of A Low Loss Pin-Schottky Limiter, Chin-Leong Lim

Chin-Leong Lim

The main cause of loss in the PIN-Schottky limiter is the diodes’ parasitic capacitances. Techniques to counter the parasitic capacitances include using bare chip, air cavity packaging, diode stacking, mesa construction, isolating the Schottky diode from the signal path and connecting the diodes to a low impedance node. But the aforementioned techniques either sacrifice cost, manufacturability, size, performances or thermal ruggedness. To reduce loss in the PIN-Schottky limiter, we re-configured its parasitics into a low pass ladder network. This paper reports on the new configuration’s changed large signal and transient performances. We observed improved isolation at 0.9 and ...


Max Operation In Statistical Static Timing Analysis On The Non-~Gaussian Variation Sources For Vlsi Circuits, Abu M. Baker 2013 University of Nevada, Las Vegas

Max Operation In Statistical Static Timing Analysis On The Non-~Gaussian Variation Sources For Vlsi Circuits, Abu M. Baker

UNLV Theses/Dissertations/Professional Papers/Capstones

As CMOS technology continues to scale down, process variation introduces significant uncertainty in power and performance to VLSI circuits and significantly affects their reliability. If this uncertainty is not properly handled, it may become the bottleneck of CMOS technology improvement. As a result, deterministic analysis is no longer conservative and may result in either overestimation or underestimation of the circuit delay. As we know that Static-Timing Analysis (STA) is a deterministic way of computing the delay imposed by the circuits design and layout. It is based on a predetermined set of possible events of process variations, also called corners of ...


In-Phase Coherently-Coupled Optically-Pumped Vecsel Array, Alec C. Sills, Gavin N. West, Eryn A. Fennig, Mike P. Grimshaw, Matthew T. Johnson, Manoj Kanskar, Kent D. Choquette, Paul O. Leisher 2013 Rose-Hulman Institute of Technology

In-Phase Coherently-Coupled Optically-Pumped Vecsel Array, Alec C. Sills, Gavin N. West, Eryn A. Fennig, Mike P. Grimshaw, Matthew T. Johnson, Manoj Kanskar, Kent D. Choquette, Paul O. Leisher

Faculty Publications - Physics and Optical Engineering

We report on an optically pumped vertical-external-cavity surface-emitting laser array exhibiting coherent coupling. Imaging of the far field shows interference consistent with in-phase coherent coupling, and a majority of total power is present in the central on-axis lobe. The physical mechanism of operation is attributed to diffractive coupling, wherein a small portion of the light emitting from each emitter is shared with adjacent emitters of the array.


Role Of Atomic Variability In Dielectric Charging: A First-Principles-Based Multiscale Modeling Study, Ravi Pramod Kumar Vedula, Sambit Palit, Muhammad A. Alam, Alejandro Strachan 2013 Purdue University

Role Of Atomic Variability In Dielectric Charging: A First-Principles-Based Multiscale Modeling Study, Ravi Pramod Kumar Vedula, Sambit Palit, Muhammad A. Alam, Alejandro Strachan

Birck and NCN Publications

We present a dielectric charging model that combinesab initiocalculations of trap levels with a continuum-level transport model and apply it to interpret charging currents in amorphous silicon nitride. Density functional theory calculations on an ensemble of structures predict a distribution of electron trap levels up to 1.8 eV below the conduction band edge and provide insight into the physical trapping mechanisms. Incorporating this information in the continuum model, as opposed to the standard approach of a single adjustable trap level, not only leads to a more accurate description of experimental current transients in metal-insulator-metal capacitors, but also to a ...


In-Line Post-Process Scribing For Reducing Cell To Module Efficiency Gap In Monolithic Thin-Film Photovoltaics, Sourabh Dongaonkar, Muhammad A. Alam 2013 Purdue University

In-Line Post-Process Scribing For Reducing Cell To Module Efficiency Gap In Monolithic Thin-Film Photovoltaics, Sourabh Dongaonkar, Muhammad A. Alam

Birck and NCN Publications

The gap between cell and module efficiency is a major challenge for all photovoltaic (PV) technologies. For monolithic thin-film PV modules, a significant fraction of this gap has been attributed to parasitic shunts and other defects, distributed across the module. In this paper, we show that it is possible to contain or isolate these shunts using state-of-the-art laser scribing processes, after the fabrication of the series-connected module is finished. We discuss three alternatives, and quantify the performance gains for each technique. We demonstrate that using these techniques, it is possible to recover up to 50% of the power lost to ...


Mems Lab Simulation Tool, Oluwatosin D. Adeosun, Sambit Palit, Ankit Jain, Muhammad A. Alam 2013 Purdue University

Mems Lab Simulation Tool, Oluwatosin D. Adeosun, Sambit Palit, Ankit Jain, Muhammad A. Alam

The Summer Undergraduate Research Fellowship (SURF) Symposium

MEMS actuators have multiple design applications. Understanding their behavior as well as the ability to predict their actuation characteristics and voltage response is important when designing these actuators. In order to know these devices will behave, designers have to solve multiple analytical equations and experiments that can be very time consuming. Over the course of the summer a tool was created on nanoHUB that will allow users to enter information about a MEMS actuator and provide the voltage response of the actuator. To create the tool, scaling equations were first provided for various geometry configurations and the equations were next ...


Assessing The Mvs Model For Nanotransistors, Siyang Liu, Xingshu Sun, Mark S. Lundstrom 2013 Purdue University

Assessing The Mvs Model For Nanotransistors, Siyang Liu, Xingshu Sun, Mark S. Lundstrom

The Summer Undergraduate Research Fellowship (SURF) Symposium

A simple semi-empirical compact MOSFET model has been developed, which is called MIT virtual source (MVS) model. Compare to other model used in industry, MVS model requires only a few parameters, most of which can be directly obtained from experiment, and produce accurate results. One aim of this paper is to test the applicability of the MVS model to transistor made from MoS2 rather than silicon. Another target is to determine the sustainability of the MVS model under different transistor tests. To achieve these goals, the MVS model will be used to fit the experimental data on MoS2 ...


Thread Based Battery For Low Power E-Textile Applications, Pranav Laxmanan, Girish Chitnis, Rahim Rahimi, Babak Ziaie 2013 Purdue University

Thread Based Battery For Low Power E-Textile Applications, Pranav Laxmanan, Girish Chitnis, Rahim Rahimi, Babak Ziaie

The Summer Undergraduate Research Fellowship (SURF) Symposium

Textile electronic systems, or e-textiles, are on the rise but their utility is limited by its power demand. Potential applications include point-of-care diagnostic systems that would enable medical monitoring at the site of care. A small, inexpensive, and easy to use battery would enhance the capabilities of e-textile. Here we propose a thread based battery that attempts to satisfy these requirements. The thread based battery uses chemistry similar to an alkaline battery. The fabrication process involves patterning of current collector (silver epoxy or carbon ink) followed by zinc electroplating and manganese dioxide deposition. Thread present in between these two electrodes ...


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