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Physical Effects On The Worst-Case Delay Analysis And Signal Integrity Of Buses And Spirals, Mahmoud Mahany 2024 American University in Cairo

Physical Effects On The Worst-Case Delay Analysis And Signal Integrity Of Buses And Spirals, Mahmoud Mahany

Theses and Dissertations

Physical effects have a significant impact on the IC design which will be investigated in this thesis. Moving toward advanced technology nodes, magnetic effects become more dominant than capacitive effects. As the dimensions of the devices go down and the interconnect manipulates the circuit behavior more and more. Cross talking and voltage drops are affecting the design heavily, however - going to the full electromagnetic point of view - current return path (CRP) adds significant parasitics to the performance of the chip. Neglecting the CRP gives wrong intuition and simulation of the designs, especially that the environment and surroundings can …


Influence Of Al2o3 Passivation Layer Thickness On The Thermal Stability And Quality Of Mocvd-Grown Gan On Si, S M Atiqur Rahman, Manika Tun Nafisa, Zhe Chuan Feng, Benjamin Klein, Ian T. Ferguson 2024 Kennesaw State University

Influence Of Al2o3 Passivation Layer Thickness On The Thermal Stability And Quality Of Mocvd-Grown Gan On Si, S M Atiqur Rahman, Manika Tun Nafisa, Zhe Chuan Feng, Benjamin Klein, Ian T. Ferguson

Symposium of Student Scholars

This research delves into the significant impact of varying thicknesses of the Al2O3 passivation layer on the thermal stability and crystalline quality of GaN on Si structures, an essential aspect for the next generation of high-temperature electronic and optoelectronic devices. By adopting metal-organic chemical vapor deposition (MOCVD) for the growth process, we analyzed structures with different Al2O3 passivation layer thicknesses: none, 2 nm, 10 nm, and 20 nm, each built upon the GaN layer. Through Raman spectroscopy, we meticulously assessed the changes in the E2 (High) phonon mode's peak position and full width …


Ionic Conductivity, Li+ Transference Number, And Diffusion Coefficient Of A Solid-State Electrolyte Composite, Lizbeth Zurita 2024 Brigham Young University

Ionic Conductivity, Li+ Transference Number, And Diffusion Coefficient Of A Solid-State Electrolyte Composite, Lizbeth Zurita

Reviews, Analyses, and Instructional Studies in Electrochemistry (RAISE)

The design of solid-state electrolyte (SSE) composites involves the fundamental study of transport properties, such as ionic conductivity. This transport property is influenced by the transport mechanisms of the charge species inside the composite, such as diffusion and migration. In this work, we perform the measurement of these three parameters through defined techniques. The resulting parameters were: ionic conductivity, the diffusion coefficient, and the Li+ transference number.


Effect Of Fabrication Parameters On The Ferroelectricity Of Hafnium Zirconium Oxide Films: A Statistical Study, Guillermo A. Salcedo, Ahmad E. Islam, Elizabeth Reichley, Michael Dietz, Christine M. Schubert Kabban, Kevin D. Leedy, Tyson C. Back, Weison Wang, Andrew Green, Timothy S. Wolfe, James M. Sattler 2024 Air Force Institute of Technology

Effect Of Fabrication Parameters On The Ferroelectricity Of Hafnium Zirconium Oxide Films: A Statistical Study, Guillermo A. Salcedo, Ahmad E. Islam, Elizabeth Reichley, Michael Dietz, Christine M. Schubert Kabban, Kevin D. Leedy, Tyson C. Back, Weison Wang, Andrew Green, Timothy S. Wolfe, James M. Sattler

Faculty Publications

Ferroelectricity in hafnium zirconium oxide (Hf1−xZrxO2) and the factors that impact it have been a popular research topic since its discovery in 2011. Although the general trends are known, the interactions between fabrication parameters and their effect on the ferroelectricity of Hf1−xZrxO2 require further investigation. In this paper, we present a statistical study and a model that relates Zr concentration (x), film thickness (tf), and annealing temperature (Ta) with the remanent polarization (Pr) in tungsten (W)-capped Hf1−xZrxO2. …


Impact Of Chips And Science Act Of 2022 On China's Related Industries And Policy Suggestions, Jiuling SHI, Yongmiao HONG, Ying LIU 2024 School of Economics and Management, University of Chinese Academy of Sciences, Beijing 100190, China MOE Philosophy and Social Science Laboratory of Digital Economic Monitoring, Forecasting, Early Warning, and Policy Simulation (Cultivation) University of Chinese Academy of Sciences, Beijing 100190, China

Impact Of Chips And Science Act Of 2022 On China's Related Industries And Policy Suggestions, Jiuling Shi, Yongmiao Hong, Ying Liu

Bulletin of Chinese Academy of Sciences (Chinese Version)

As the cornerstone of modern information technology, chips are the strategic commanding heights of competition game and industrial development of countries all over the world. In recent years, the United States has taken advantage of its technological advances to successively introduce chip laws against China, which seriously violates the laws of market economy and has a significant impact on the global semiconductor industry chain. This study first sorts out the development pattern of the global semiconductor industry, and then introduces the background, content and purpose of CHIPS and Science Act of 2022. Then, it analyzes the impact of the …


Analyzing Viability Of Blue Indium Gallium Nitride Leds For Use In Space Missions Using A Low Earth Orbit Cubesa, Bertrand Edward Wieliczko 2024 West Virginia University

Analyzing Viability Of Blue Indium Gallium Nitride Leds For Use In Space Missions Using A Low Earth Orbit Cubesa, Bertrand Edward Wieliczko

Graduate Theses, Dissertations, and Problem Reports

The payload capacity of spacecraft is constrained by the weight of the craft itself, including fuel and electronic systems. The protective measures used to shield onboard electronics from the harsh space environment, characterized by high-energy particles and significant temperature fluctuations, can further diminish the available payload capacity. This thesis explores the potential of naturally radiation-hard alternatives to commonly used electronic materials, such as Silicon, to reduce the need for shielding and other protective measures, thereby decreasing the weight and cost of space missions.

III-V semiconductor materials, such as Gallium Nitride (GaN), are known for their inherent resilience to temperature swings …


Nano-Patterned Si Structures For Optical Filters And Electro-Mechanical Relays: Fabrication, Characterization, Prospects, And Limitations, Md Ataul Mamun 2024 Virginia Commonwealth University

Nano-Patterned Si Structures For Optical Filters And Electro-Mechanical Relays: Fabrication, Characterization, Prospects, And Limitations, Md Ataul Mamun

Theses and Dissertations

Nanofabrication technology, especially nanopatterning, is a rapidly advancing field that has already resulted in creating novel devices and holds promise for producing even more with unmatched performance. These techniques also allow us to gain insight into physical phenomena at the micro- and nanoscale. The ultimate performance of nanofabricated devices and their compatibility with existing Si-based CMOS technology hinge upon the careful selection of materials and precise design, coordinated with meticulous pattern transfer. In this work, we applied nanopatterning techniques on silicon to create optical filters for the shortwave infrared (SWIR) region and nanoelectromechanical system (NEMS) relay-based logic gates. Additionally, these …


Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov 2024 Virginia Commonwealth University

Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov

Theses and Dissertations

This study explores the potential of beryllium (Be) as an alternative dopant to magnesium (Mg) for achieving higher hole concentrations in gallium nitride (GaN). Despite Mg prominence as an acceptor in optoelectronic and high-power devices, its deep acceptor level at 0.22 eV above the valence band limits its effectiveness. By examining Be, this research aims to pave the way to overcoming these limitations and extend the findings to aluminum nitride and aluminum gallium nitride (AlGaN) alloy. Key contributions of this work include. i)Identification of three Be-related luminescence bands in GaN through photoluminescence spectroscopy, improving the understanding needed for further material …


Reinventing Integrated Photonic Devices And Circuits For High Performance Communication And Computing Applications, Venkata Sai Praneeth Karempudi 2024 University of Kentucky

Reinventing Integrated Photonic Devices And Circuits For High Performance Communication And Computing Applications, Venkata Sai Praneeth Karempudi

Theses and Dissertations--Electrical and Computer Engineering

The long-standing technological pillars for computing systems evolution, namely Moore's law and Von Neumann architecture, are breaking down under the pressure of meeting the capacity and energy efficiency demands of computing and communication architectures that are designed to process modern data-centric applications related to Artificial Intelligence (AI), Big Data, and Internet-of-Things (IoT). In response, both industry and academia have turned to 'more-than-Moore' technologies for realizing hardware architectures for communication and computing. Fortunately, Silicon Photonics (SiPh) has emerged as one highly promising ‘more-than-Moore’ technology. Recent progress has enabled SiPh-based interconnects to outperform traditional electrical interconnects, offering advantages like high bandwidth density, …


Smart System For Wheat Diseases Early Detection, Rustam Baratov, Himola Sunnatillayeva, Almardon Mamatovich Mustafoqulov 2023 Tashkent Institute of Irrigation and Agricultural Mechanization Engineers. National Research University. Address: Kary Niyaziy Str., 39, 100000, Tashkent, Uzbekistan. E-mail: rbaratov@mail.ru;

Smart System For Wheat Diseases Early Detection, Rustam Baratov, Himola Sunnatillayeva, Almardon Mamatovich Mustafoqulov

Chemical Technology, Control and Management

This paper presents a smart system for early detection of wheat plant diseases in the vegetation period. The proposed smart system allows detecting three types of wheat diseases, particularly yellow rust, powdery mildew and septoria at early stage and significantly improves the soil and ecology by locally spraying harmful chemicals just to sickness plants. The proposed diagnostic program is created in the C++ programming language. The basic structure of the smart system consists of Raspberry PI 4 MODULE, Logitech HD Pro Webcam C920, buzzer, HC-SR04 distance sensor, DC motor driver, AC motor, power supply, relay and some digital devices.


Design, Fabrication And Characterization Of Zero Power Sensor/Harvester For Smart Grid Applications, Zeynel Guler 2023 University of New Mexico

Design, Fabrication And Characterization Of Zero Power Sensor/Harvester For Smart Grid Applications, Zeynel Guler

Mechanical Engineering ETDs

This study presents a flexible sensor/harvester device to be used in both electromagnetic sensing and energy harvesting applications for smart grids. When a current passes through a wire, the sensor detects the magnetic field created by that current. The sensor magnet interacts with the wire magnetic field resulting in a transfer of energy through the piezoelectric cantilever. Piezoelectric, conductive, magnetic, and magnetostrictive composite thin films were prepared to fabricate this device.

Initially, the magnet of the cantilever was optimized considering its shape, thickness, length, taper angle etc. via both simulations and experiments. Peak to peak voltage versus cantilever position graph …


Characterization Of Highly Doped N-Type And P-Type Silicon Carbide Ohmic Contacts, Tanner Rice 2023 University of Arkansas-Fayetteville

Characterization Of Highly Doped N-Type And P-Type Silicon Carbide Ohmic Contacts, Tanner Rice

Graduate Theses and Dissertations

Silicon Carbide (SiC) is a rather new material that possesses unparalleled properties when compared to Silicon. Due to its larger band gap alongside other thermal properties, SiC can survive in hotter, more radiation intensive environments, whether that be within the crust of the earth or in the reaches of space. As a desirable semiconductor for these applications, CMOS is an especially important device due to its low power consumption. However, creating a good contact between the metal and semiconductor optimally requires two different metals for the n -type and the p-type semiconductor. This greatly increases the processing time, as separate …


Electrical Characteristics Of In-House Produced Micro/Nanodielectrics, Dewan Mahmudullah 2023 University of South Alabama

Electrical Characteristics Of In-House Produced Micro/Nanodielectrics, Dewan Mahmudullah

<strong> Theses and Dissertations </strong>

Dielectric characterization is very important across a wide range of applications, including the design and optimization of capacitors, electrical insulation, and electronic devices. It plays a vital role in providing valuable insights for material selection, performance evaluation, and the development of advanced dielectrics. The permittivity of dielectrics is a fundamental property of dielectric materials that quantifies their ability to store and dissipate energy in the presence of an electric field. Studies for developing advanced dielectrics and accurate measurements of the dielectric constant are essential for understanding and optimizing the performance of various electrical and electronic systems. The objective of this …


Amorphous Boron Carbide-Amorphous Silicon Heterojunction Devices, Vojislav Medic 2023 University of Nebraska-Lincoln

Amorphous Boron Carbide-Amorphous Silicon Heterojunction Devices, Vojislav Medic

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

This dissertation will show successful development and characterization of amorphous boron carbide-amorphous silicon heterojunction device with potential for neutron detection. The amorphous hydrogenated boron carbide (a-BC:H) has been extensively researched as a semiconductor for neutron voltaic device fabrication. Naturally occurring boron contains 19.8% of boron isotope B10 that has a high absorption cross section of thermal neutrons at lower energies, and boron carbide contains 14.7% of that B10 isotope. Therefore, as a semiconductor compound of boron a-BC:H has the ability to absorb radiation, generate charge carriers, and collect those carriers. Previous work on a-BC:H devices investigated the fabrication …


Investigating Mems Devices In Flow Conditions Relevant To Flow-Through Systems., Mohammad Shafquatul Islam 2023 University of Louisville

Investigating Mems Devices In Flow Conditions Relevant To Flow-Through Systems., Mohammad Shafquatul Islam

Electronic Theses and Dissertations

Advancements in microscale actuating technologies has substantially expanded the possibilities of interacting with the surrounding environment. Microstructures that deflect in response to mechanical forces are one of the largest application areas of microelectromechanical systems (MEMS). MEMS devices, functioning as sensors, actuators, and support structures, find applications in inertial sensors, pressure sensors, chemical sensors, and robotics, among others. Driven by the critical role of catalytic membrane reactors, this dissertation aims to evaluate enzyme activity on polymeric membranes and explore how fabrication methods from the field of Electrical and Computer Engineering (ECE) can incorporate sensing and actuation into these porous surfaces. Toward …


Design, Fabrication, And Integration Of Robotic Skin Sensors For Human Robot Interaction., Olalekan Olakitan Olowo 2023 University of Louisville

Design, Fabrication, And Integration Of Robotic Skin Sensors For Human Robot Interaction., Olalekan Olakitan Olowo

Electronic Theses and Dissertations

Enhancing physical human-robot interaction in modern robotics relies on refining the tactile perception of robot skin sensors. This research focuses on crucial aspects of the development process, including fabrication techniques, miniaturization, and integration for a more efficient collaborative human-robot interface. The fabrication process of robot skin sensors, designed to mimic human skin, is explored both within and outside cleanroom environments. An enhanced technique is presented to increase fabrication yield and create more miniaturized sensor designs with feature sizes in the tens of microns. These sensors function as piezoresistive arrays using organic polymers like PEDOT: PSS as the pressure-sensing medium. Various …


Carrier Dynamics In Green Iii-Nitride Leds Using Small-Signal Electroluminescence, Xuefeng Li 2023 University of New Mexico - Main Campus

Carrier Dynamics In Green Iii-Nitride Leds Using Small-Signal Electroluminescence, Xuefeng Li

Optical Science and Engineering ETDs

Solid-state lighting has achieved significant success over the past two decades, but the low quantum efficiency of green LEDs (i.e., the “green gap”) remains a barrier to full red-green-blue (RGB) displays in numerous applications. Combating efficiency reduction in longer-wavelength LEDs requires understanding the relative roles of intrinsic effects (e.g., wave-function overlap, carrier-current density relationship, phase-space filling (PSF)) vs. extrinsic effects (e.g., material degradation due to increased defect density, compositional inhomogeneities, etc.). A systematic study of the carrier dynamics in InGaN/GaN LEDs is very important for understanding the origin of the green gap and for providing solutions to improve the efficiency …


Impact Of Silicon Ion Irradiation On Aluminum Nitride-Transduced Microelectromechanical Resonators, David D. Lynes, Joshua Young, Eric Lang, Hengky Chandrahalim 2023 Air Force Institute of Technology

Impact Of Silicon Ion Irradiation On Aluminum Nitride-Transduced Microelectromechanical Resonators, David D. Lynes, Joshua Young, Eric Lang, Hengky Chandrahalim

Faculty Publications

Microelectromechanical systems (MEMS) resonators use is widespread, from electronic filters and oscillators to physical sensors such as accelerometers and gyroscopes. These devices' ubiquity, small size, and low power consumption make them ideal for use in systems such as CubeSats, micro aerial vehicles, autonomous underwater vehicles, and micro-robots operating in radiation environments. Radiation's interaction with materials manifests as atomic displacement and ionization, resulting in mechanical and electronic property changes, photocurrents, and charge buildup. This study examines silicon (Si) ion irradiation's interaction with piezoelectrically transduced MEMS resonators. Furthermore, the effect of adding a dielectric silicon oxide (SiO2) thin film is …


Electrophertic Deposition And Characterization Of Molybdenum Disulfide On Silicon Substrates, Alex J. Young 2023 Louisiana State University at Baton Rouge

Electrophertic Deposition And Characterization Of Molybdenum Disulfide On Silicon Substrates, Alex J. Young

LSU Doctoral Dissertations

The electrical characteristics of 2D materials such as high electron mobility and current density are of great interest to various fields from optoelectronics to renewable energy. Researchers have focused their efforts on transition metal dichalcogenides (TMDCs) due to their direct energy band gap. One such TMDC that has garnered much attention is molybdenum disulfide (MoS2). MoS2 has electrical properties comparable to graphene and is a TMDC with characteristics amenable to applications such as solar cells and sensors. Commonly deposited through time-consuming and complex deposition methods such as chemical vapor deposition (CVD), the viability of MoS2 as an electronic material will …


Dynamic Mechanism Of Science Based Technological Innovation And Industrial Evolution—Take Semiconductor, Digital Computer And Radio Technologies As Examples, Yi Zhang, Qiang YAN 2023 School of Economics and Management, Beijing University of Posts and Telecommunications, Beijing 100876, China

Dynamic Mechanism Of Science Based Technological Innovation And Industrial Evolution—Take Semiconductor, Digital Computer And Radio Technologies As Examples, Yi Zhang, Qiang Yan

Bulletin of Chinese Academy of Sciences (Chinese Version)

By studying the technological innovation and industrial development process of semiconductor, digital computer and radio, this study analyzes the path, conditions and force of science-based technological innovation and its industrialization, establishes a chain reaction model of large-scale technological innovation and diffusion, and compares it with market-based technological innovation. It is found that the large-scale aggregation of scientific research institutions and industrial laboratories accelerates the speed of technological innovation, and diffuses along two paths of scientific research institutions to enterprises and enterprises to enterprises, forming a chain reaction of large-scale technological innovation. Strategic demand is the basic driving force for the …


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