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Integrated Chirped-Grating Spectrometer-On-A-Chip, Shima Nezhadbadeh 2019 University of New Mexico

Integrated Chirped-Grating Spectrometer-On-A-Chip, Shima Nezhadbadeh

Optical Science and Engineering ETDs

In this dissertation we demonstrate a new structure based on waveguide coupling atop a silicon wafer using a chirped grating to provide the dispersion that leads to a high-resolution, compact, fully integrable and CMOS-compatible spectrometer. Light is both analyzed and detected in a single, completely monolithic component which enables realizing a high-resolution portable spectrometer with an extremely compact footprint. The structure is comprised of a SiO2/Si3N4/SiO2 waveguide on top of a silicon wafer. Grating regions are fabricated on the top cladding of the waveguide. The input light is incident on a chirped grating ...


Influence Of Flow Rate, Nozzle Speed, Pitch And The Number Of Passes On The Thickness Of S1805 Photoresist In Suss Microtec As8 Spray Coater, Rohan Sanghvi, Gyuseok Kim 2019 Singh Center for Nanotechnology

Influence Of Flow Rate, Nozzle Speed, Pitch And The Number Of Passes On The Thickness Of S1805 Photoresist In Suss Microtec As8 Spray Coater, Rohan Sanghvi, Gyuseok Kim

Tool Data

S1805 positive photoresist has been deposited on single crystalline Si wafers using a Suss MicroTec Alta Spray. The influence of flow rate, nozzle speed, pitch and number of passes on the thickness of the photoresist was studied. Results show that the thickness of S1805 is linearly proportional to the flow rate and number of passes, and inversely proportional to the nozzle speed and pitch.


Correction Of Pattern Size Deviations In The Fabrication Of Photomasks Made With A Laser Direct-Writer, Ningzhi Xie, George Patrick Watson 2019 Singh Center for Nanotechnology

Correction Of Pattern Size Deviations In The Fabrication Of Photomasks Made With A Laser Direct-Writer, Ningzhi Xie, George Patrick Watson

Protocols and Reports

When using Heidelberg DWL66+ laser writer to fabricate the photomask, the pattern feature dimensions may have deviations. These deviations can be caused by the lithography process and the undercut in the metal etch process. The same deviation value of 0.8µm was found to appear in all the patterns independent of the pattern original size and local pattern density. To overcome this universal deviation, a universal bias is suggested to be applied to the original patterns during the data preparation for the lithography process. In order to ensure this pre-exposure bias method can work, both the laser direct-write exposure conditions ...


Influence Of Naoh Concentration On Transfer Process Of Graphene, Francisco Saldana, Chengyu Wen, George Patrick Watson 2019 Singh Center for Nanotechnology

Influence Of Naoh Concentration On Transfer Process Of Graphene, Francisco Saldana, Chengyu Wen, George Patrick Watson

Protocols and Reports

The process of transferring a monolayer of graphene using two different concentrations of sodium hydroxide (NaOH) solution unto a silicon dioxide (SiO2) coated Si chip using electrochemistry was performed. The transfer process is crucial for the delamination of a continuous graphene monolayer film from copper foil. After examining and inspecting the integrity of the graphene monolayer, it was observed that the lower concentration to NaOH led to slower rate of hydrogen bubble generation; this condition was found to be less destructive and yielded a graphene film with fewer visible tears.


Smart Charging Of Future Electric Vehicles Using Roadway Infrastructure, Sara Ahmed, Ethan Ahn, Mahmoud Reda Taha, Samer Dessouky, Moneeb Genedy, Daniel Fernandez, Ann Sebestian, Patience Raby 2019 University of Texas at San Antonio

Smart Charging Of Future Electric Vehicles Using Roadway Infrastructure, Sara Ahmed, Ethan Ahn, Mahmoud Reda Taha, Samer Dessouky, Moneeb Genedy, Daniel Fernandez, Ann Sebestian, Patience Raby

Publications

Inspired by the fact that there is an immense amount of renewable energy sources available on the roadways such as mechanical pressure and frictional heat, this study presented the development and implementation of an innovative charging technique for future electric vehicles (EVs) by fully utilizing the existing roadways and the state-of-the-art nanotechnology and power electronics. The project introduced a novel wireless charging system, SIC (Smart Illuminative Charging), that uses LEDs powered by piezoelectric nanomaterials as the energy transmitter source and thin film solar panels placed at the bottom of the EVs as the receiver, which is then poised to deliver ...


Five-Level Flying Capacitor Converter Used As A Static Compensator For Current Unbalances In Three-Phase Distribution Systems, Rafael Franceschi 2019 University of Arkansas, Fayetteville

Five-Level Flying Capacitor Converter Used As A Static Compensator For Current Unbalances In Three-Phase Distribution Systems, Rafael Franceschi

Theses and Dissertations

This thesis presents and evaluates a solution for unbalanced current loading in three-phase distribution systems. The proposed solution uses the flying capacitor multilevel converter as its main topology for an application known as Unbalanced Current Static Compensator. The fundamental theory, controller design and prototype construction will be presented along with the experimental results. The Unbalanced Current Static Compensator main objective is the balancing of the up-stream currents from the installation point to eliminate the negative- and zero-sequence currents originated by unbalanced single-phase loads.

Three separate single-phase flying capacitor converters are controlled independently using a d-q rotating reference frame algorithm to ...


Residential Electricity Management And Protection System, Ejimonu Kosisochukwu Gabriel 2019 Afe Babalola University, Ado Ekiti (ABUAD), Nigeria

Residential Electricity Management And Protection System, Ejimonu Kosisochukwu Gabriel

Journal of International Technology and Information Management

The Residential Electricity Monitoring System is an electricity meter connected to the Internet to provide real time data on the power system in your home. The REMS is designed to replace the distribution board allowing it to conduct a series of tests on the quality of the electricity supply to your home/facility and, within your home detect basic wiring faults and allow owners and service providers to identify potential problems with the electrical systems.

The electrical monitoring system finally puts proper electrical control into the hands of the home owner by providing him with the ability to control power ...


Smart Charging Of Future Electric Vehicles Using Roadway Infrastructure, Sara Ahmed, Ethan Ahn, Mahmoud Reda Taha, Samer Dessouky, Moneeb Genedy, Daniel Fernandez, Ann Sebestian, Patience Raby 2019 University of Texas at San Antonio

Smart Charging Of Future Electric Vehicles Using Roadway Infrastructure, Sara Ahmed, Ethan Ahn, Mahmoud Reda Taha, Samer Dessouky, Moneeb Genedy, Daniel Fernandez, Ann Sebestian, Patience Raby

Data

Corresponding data set for Tran-SET Project No. 18ITSTSA03. Abstract of the final report is stated below for reference:

"Inspired by the fact that there is an immense amount of renewable energy sources available on the roadways such as mechanical pressure and frictional heat, this study presented the development and implementation of an innovative charging technique for future electric vehicles (EVs) by fully utilizing the existing roadways and the state-of-the-art nanotechnology and power electronics. The project introduced a novel wireless charging system, SIC (Smart Illuminative Charging), that uses LEDs powered by piezoelectric nanomaterials as the energy transmitter source and thin film ...


Continuous Monitoring Of Soil Nitrate Using A Miniature Sensor With Poly(3-Octyl-Thiophene) And Molybdenum Disulfide Nanocomposite, Md. Azahar Ali, Xinran Wang, Yuncong Chen, Yueyi Jiao, Navreet K. Mahal, Satyanarayana Moru, Michael J. Castellano, James C. Schnable, Patrick S. Schnable, Liang Dong 2019 Iowa State University

Continuous Monitoring Of Soil Nitrate Using A Miniature Sensor With Poly(3-Octyl-Thiophene) And Molybdenum Disulfide Nanocomposite, Md. Azahar Ali, Xinran Wang, Yuncong Chen, Yueyi Jiao, Navreet K. Mahal, Satyanarayana Moru, Michael J. Castellano, James C. Schnable, Patrick S. Schnable, Liang Dong

Agronomy Publications

There is an unmet need for improved fertilizer management in agriculture. Continuous monitoring of soil nitrate would address this need. This paper reports an all-solid-state miniature potentiometric soil sensor that works in direct contact with soils to monitor nitrate-nitrogen (NO3--N) in soil solution with parts-per-million (ppm) resolution. A working electrode is formed from a novel nanocomposite of poly(3-octyl-thiophene) and molybdenum disulfide (POT–MoS2) coated on a patterned Au electrode and covered with a nitrate-selective membrane using a robotic dispenser. The POT–MoS2 layer acts as an ion-to-electron transducing layer with high hydrophobicity and redox properties. The modification of the ...


Structural Features Of The Solid Solution (Gaas)1-X-Y(Ge2)X(Znse)Y With Quantum Dots (0≤X≤0,17; 0≤Y≤0,14), Sirojiddin Z. Zainabidinov, Khatamjon J. Mansurov, Akramjon Y. Boboev, Hkushruy A. Makhmudov 2019 Andijan State University. Andijan, Uzbekistan.

Structural Features Of The Solid Solution (Gaas)1-X-Y(Ge2)X(Znse)Y With Quantum Dots (0≤X≤0,17; 0≤Y≤0,14), Sirojiddin Z. Zainabidinov, Khatamjon J. Mansurov, Akramjon Y. Boboev, Hkushruy A. Makhmudov

Euroasian Journal of Semiconductors Science and Engineering

X-ray diffraction studies showed that the resulting film has a sphalerite structure and is single-crystal with the (100) orientation. The lattice parameter of the film is af = 0.56697 nm. By atomic force microscope was shown the possibility of obtaining a semiconductor heterostructure with quantum dots by the method of liquid phase epitaxy.


Capacitive Spectroscopy Of Defects In Semiconductors, Doped By Atoms Of Gadolinium, Shoakhriyor B. Norkulov, Khodjakbar S. Daliev, Makhmud Sh. Dehkanov, Uktam K. Erugliev 2019 National University of Uzbekistan, Tashkent, Uzbekistan

Capacitive Spectroscopy Of Defects In Semiconductors, Doped By Atoms Of Gadolinium, Shoakhriyor B. Norkulov, Khodjakbar S. Daliev, Makhmud Sh. Dehkanov, Uktam K. Erugliev

Euroasian Journal of Semiconductors Science and Engineering

The processes of formation of defects in silicon, doped by gadolinium are investigated by the method of DLTS. It is shown that in diffusion the introduction of Gd in the Si leads to the formation of deep levels with ionization energies Ec–0.23 eV, Ec–0.35 eV, Ec–0.41 eV and Ec–0.54 eV and a capture cross section of electrons n: 410-17cm-2, 210-15 cm2, 1.110-16 cm2 and 1.510-15 cm2, respectively, and in samples p-Si found only one level with Ev+0.32 eV.


Serial And Shuntable Resistance Of Cigs Solar Photo-Electric Module In The Conditions Of Real Solar Lighting At Various Temperatures, Rustam R. Kobulov, Nuriddin A. Matchanov, Omonboy K. Ataboev, Farrukh A. Akbarov 2019 International Solar Energy Institute, Tashkent, Uzbekistan

Serial And Shuntable Resistance Of Cigs Solar Photo-Electric Module In The Conditions Of Real Solar Lighting At Various Temperatures, Rustam R. Kobulov, Nuriddin A. Matchanov, Omonboy K. Ataboev, Farrukh A. Akbarov

Euroasian Journal of Semiconductors Science and Engineering

The current-voltage characteristics of the solar photovoltaic module, based on a thin-film polycrystalline semiconductor binary compound Cu(In, Ga)Se2, under real solar illumination (Prad=780 ± 30 W/m2), in the temperature range of 25 °C-50 °C, have been studied and the values of serial and shunt resistance are determined. It has been established that with increasing temperature, the magnitudes of the series and shunting resistance of the solar photovoltaic module decrease, which is most likely due to the modulation of the resistance of the n-CdS buffer front layer.


Study Of The Morphological And Electrical Properties Of Films Of Solid Solution Znxsn1-Хse Obtained By The Method Of Cmbd, Kudrat M. Kuchkarov, Takhir M. Razykov, Bobur A. Ergashev, Rukhiddin T. Yuldoshov 2019 SPA «Physics-Sun» of the Academy of Sciences of the Republic of Tashkent, Uzbekistan.

Study Of The Morphological And Electrical Properties Of Films Of Solid Solution Znxsn1-Хse Obtained By The Method Of Cmbd, Kudrat M. Kuchkarov, Takhir M. Razykov, Bobur A. Ergashev, Rukhiddin T. Yuldoshov

Euroasian Journal of Semiconductors Science and Engineering

The ZnXSn1-XSe solid solution films were fabricated by the chemical molecular beam deposition (CMBD) method. The sources used were ZnSe and SnSe compounds of stoichiometric composition at the substrate temperature of 5600С. The morphological and electrophysical properties of the ZnXSn1-XSe solid solution films are investigated. Scanning electron microscope images showed that the grain sizes of the films are 8÷20 microns. The structural parameters of the obtained films are given. The electrical conductivity of the films was 15 ÷ 1 • 10-6 (Ohm·cm) -1 depending on the composition of the solid solution.


Influence Of Rhodium And Iridium Impurity Atoms On The Capacitive Characteristics Of Si-Siо2 Structures, Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, Xotamjon J. Mansurov 2019 National University of Uzbekistan named after Mirzo Ulugbek

Influence Of Rhodium And Iridium Impurity Atoms On The Capacitive Characteristics Of Si-Siо2 Structures, Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, Xotamjon J. Mansurov

Euroasian Journal of Semiconductors Science and Engineering

It was found that the doping of the semiconductor substrate with Rh and Ir atoms leads to the increase in the density of surface states at the Si – SiO2 interface. It is determined that the surface states, due to the presence of an impurity Rh and Ir are effective generation centers.


Laser Testing Of Silicon Wafers, Zakirjan T. Azamatov, Ilya A. Kulagin, Kakhkhor P. Abdurakhmanov, Nigora A. N.A. Akbarova 2019 Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan

Laser Testing Of Silicon Wafers, Zakirjan T. Azamatov, Ilya A. Kulagin, Kakhkhor P. Abdurakhmanov, Nigora A. N.A. Akbarova

Euroasian Journal of Semiconductors Science and Engineering

The possibility of detection of defects in silicon wafers by Fourier analysis of digital images obtained by laser introscopy is shown.


The Photoluminescence Spectra Of Powders Of Zinc Oxide With Laser Excitation, Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, Abdulla K. Kurbonov 2019 Institute of Semiconductor Physics and Microelectronics at the NUUz. Tashkent, Uzbekistan

The Photoluminescence Spectra Of Powders Of Zinc Oxide With Laser Excitation, Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, Abdulla K. Kurbonov

Euroasian Journal of Semiconductors Science and Engineering

The original sensitive method of research of the nanopowders based on use of laser excitation and a multichannel spectrometer is offered. The developed method can be used for the analysis of quality of a wide class of the powders on the basis of laser spectroscopy of secondary radiation.


Volt-Ampere Characteristics Of Mos Structures Al-Al2o3-P-Cdte-Mo – In The Forward Direction Of Current, Abatbay K. Uteniyazov, Kanatbay A. Ismailov, Fatima T. Srajatdinova 2019 Karakalpak state University, Nukus, Uzbekistan

Volt-Ampere Characteristics Of Mos Structures Al-Al2o3-P-Cdte-Mo – In The Forward Direction Of Current, Abatbay K. Uteniyazov, Kanatbay A. Ismailov, Fatima T. Srajatdinova

Euroasian Journal of Semiconductors Science and Engineering

The results of studies of the direct branch of the current – voltage characteristic of the Al-Al2O3-p-CdTe-Mo structure with base thicknesses d ~ 8÷10 μm are presented. It was shown that, along with point defects and impurities, complex complexes participate in the recombination processes in the base of the structure under study. It was established that at low current densities in point of recombination processes point defects take part, and at high current densities, when the recombination rate reaches full saturation of U≈NR/τi, the recombination processes in the samples under study are determined by complex complexes within which the ...


Radiation And Convective Losses In The Heat Sink Channel Of Photovoltaic-Thermal System, Oskar F. Tukhfatullin, Ramizulla A. Muminov 2019 Institute of Semiconductor Physics and Microelectronics at the NUUz, Tashkent, Uzbekistan

Radiation And Convective Losses In The Heat Sink Channel Of Photovoltaic-Thermal System, Oskar F. Tukhfatullin, Ramizulla A. Muminov

Euroasian Journal of Semiconductors Science and Engineering

. The processes of heat transfer in the channel of a liquid photovoltaic/thermal system of a flat construction without forced circulation are considered. A method of calculating the heat transfer coefficients by radiation and convection, the Nusselt and Reynolds numbers for a given photovoltaic/thermal system was proposed. It was determined that the processes of convective heat transfer in a flat photovoltaic/thermal system installed in the territory of the Republic of Uzbekistan at an optimum angle of inclination equal to the geographical latitude of the place of operation should be considered as for parallel plates located at tilt angle ...


Features The Generalities Of I-V Curve Formation In Mosfet With A Common Drain, Khayrulla K. Aripov, Akhmed M. Abdullayev, Shunkurjon T. Toshmatov 2019 Tashkent University of Information Technologies, Tashkent, Uzbekistan.

Features The Generalities Of I-V Curve Formation In Mosfet With A Common Drain, Khayrulla K. Aripov, Akhmed M. Abdullayev, Shunkurjon T. Toshmatov

Euroasian Journal of Semiconductors Science and Engineering

The results of theoretical and experimental studies of the generalities of current-voltage characteristics curve formation of metal-oxide-semiconductor transistors of the common drain are presented. The principal difference between input and output characteristics of the common drain from the analogical characteristics in the common source is shown. The source-gate and source characteristics of a metal-oxide-semiconductor transistor in the common drain are given. Combined families of source-gate and source characteristics of a metal-oxide-semiconductor transistor in the common source and drain are obtained.


Influence Of Heat Treatment On The Behavior Of Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova 2019 Institute of Semiconductor Physics and Microelectronics at the NUUz., Tashkent, Uzbekistan

Influence Of Heat Treatment On The Behavior Of Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova

Euroasian Journal of Semiconductors Science and Engineering

By means of Deep Level Transient Spectroscopy the kinetics of the annealing of the levels of tungsten in silicon during heat treatment in the temperature range 150÷4000С was studied. It was found a non-monotonic change in the concentration of deep levels Ec-0.30 eV and Ec-0.39 eV under isothermal annealing: the concentrations of both levels at short times increase, then the concentration level of Ec-0.30 eV sharply decreases, and the reduction of the concentration of deep level Ec-0.39 eV is much slower.


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