Electronic Devices and Semiconductor Manufacturing Commons^™

Synthesis And Application Of Ceramic Paste For High-Temperature Electronic Packaging, Ardalan Nasiri

Graduate Theses and Dissertations

This dissertation research focused on the synthesis and application of ceramic paste for high-temperature applications. An alumina paste material comprising aluminum dihydric phosphate and alumina powder was developed for high-temperature electronic packaging. Nano aluminum nitride and nano-silica powders were embedded to promote the paste curing process, limit the grain growth, and increase its bond shear strength. The chip-to-substrate bond strength was enhanced and met the MIL-STD requirements for die-attach assembly. Its encapsulation property was improved with fewer cracks compared to similar commercial ceramic encapsulants. The die-attach material and encapsulation properties tested at 500°C showed no defect or additional cracks. Thermal …

Converter- And Module-Level Packaging For High Power Density And High Efficiency Power Conversion, Amol Rajendrakumar Deshpande

Graduate Theses and Dissertations

Advancements in the converter- and module-level packaging will be the key for the development of the emerging high-power, high power-density, high-eciency power conversion applications, such as traction, shipboards, more-electric-aircraft, and locomotive. Wide bandgap (WBG) devices such as silicon carbide (SiC) MOSFET attract much attention in these applications for their fast switching speeds, resulting in low loss and a consequent possibility for high switching frequency to increase the power density. However, for high-current, high power implementations, WBG devices are still available in small die sizes. Multiple SiC devices need to be connected in parallel to replace a large IGBT die. It …

Design And Optimization Of Multichip Gan Module Enabling Improved Switching Performance, Asif Imran Emon

Graduate Theses and Dissertations

Wide bandgap semiconductors (SiC & GaN) due to their enhanced performance and superior material properties compared to traditional silicon power devices have become the ultimate choice for future high-performance power electronics energy conversion. GaN high electron mobility transistor (HEMT) offers very fast switching capability enabling the designer to push switching frequency to the MHz range. Traditional device packaging becomes a limiting factor in fully harnessing the benefits offered by these advanced power devices, and thus, improved and advanced packaging structures are a must to bridge the gap between GaN devices and their applications. A co-design, co-optimization method has been followed …

Performance Analysis Of Renewable Energy Resources In Rural Areas: A Case Study Of Solar Energy, Jackson Justo

Tanzania Journal of Engineering and Technology (TJET)

This paper presents an overview of the recent development trends of solar photovoltaic (PV) systems and the performance in the Tanzanian context. The two types of solar power generation that are considered in this paper are: i) solar PV systems and ii) concentrated solar power (CSP). The two are compared in terms of cost of energy and energy storage mechanism. Moreover, the effect of ambient temperature on the solar PV module is analyzed. In addition, a detailed analysis on using solar axis tracking to increase the power generation is also presented. The extent to which the cell surface temperature and …

High Speed, High Current Monitoring System, Nicolette Lila Ray

Electrical Engineering

Electronics testing requires lengthy data collection and analysis. Streamlining at least part of this process allows resource reallocation, and faster data processing. Verifying a signal’s efficiency is key specification for a component’s datasheet. This project focuses on streamlining data collection when measuring a device’s output current. It combines amplifier design and digital interfacing to perform monitor a device’s output current. A computer-enable interface displays a graphical output current representation. It ensures accurate, high speed, high current measurements while removing a person’s need to manually plot data after testing. A new testing method provides room for company and product growth with …

Ohmic Contact Metallization For Silicon Carbide In Future Transportation And Aviation Systems, Tanner W. Rice

Electrical Engineering Undergraduate Honors Theses

This paper analyzes metallization stacks in both n-type and p-type used in Silicon Carbide to create Ohmic Contacts. Silicon Carbide has shown its significance in usage as a semiconductor in high temperatures, and other extreme environments compared to its silicon counterpart. Additionally, silicon carbide exhibits many other favorable attributes such as strong radiation hardness, high power capability, and high-temperature tolerance. These attributes translate into great components for use in aviation and other future transportations by increasing reliability in a sector that already requires high reliability. Applications of this material could prove useful in fields such as aviation, among others. This …

Simultaneous Ohmic Contacts To N And P-Type Silicon Carbide For Future Electric Vehicles, Hayden Hunter

Electrical Engineering Undergraduate Honors Theses

The paper explores possible metallization schemes to form simultaneous ohmic contacts to n-type and p-type silicon carbide contacts. Silicon carbide has shown promise in revolutionizing the power electronics market due to its increased switching speed, compact design, and higher temperature tolerance when compared to Silicon, the market standard. With the continuing development of silicon carbide technology, higher efficiency in future electric vehicles can be achieved by employing this new technology. This paper discusses theoretical contact formation between metals and semiconductors along with a proposed experiment to create a Ni/Al metallization scheme on both n and p-type contacts simultaneously on a …

Reducing Emi In Sic Direct Torque Controlled Motor Drive, Michael Sykes

Electrical Engineering Undergraduate Honors Theses

This paper covers the comparison between Silicon (Si) vs Silicon Carbide (SiC) for Motor Drive systems and a possible control algorithm to limit the increased Electromagnetic Interference (EMI) caused by using SiC transistors for the inverter. Motor Drive systems need constant improvements if the world is going to move on from machines that emit CO₂ and other harmful gases into the Earth’s atmosphere. One reason these electric machines are not commonplace today is because of their efficiency and other problems they may cause. Silicon transistors are the most commonplace transistor around the world today, but advances over the past …

Low-Cost Test And Characterization Platform For Memristors, Lyle Jones

Boise State University Theses and Dissertations

The electrical Testing and Characterization of the devices built under research conditions on silicon wafers, diced wafers, or package parts have hampered research since the beginning of integrated circuits. The challenges of performing electrical characterization on devices are to acquire useful and accurate data, the ease of use of the test platform, the portability of the test equipment, the ability to automate quickly, to allow modifications to the platform, the ability to change the configuration of the Device Under Test (DUT) or the Memristor Based Design (MBD), and to do this within budget. The devices that this research is focused …

Microrobots For Wafer Scale Microfactory: Design Fabrication Integration And Control., Ruoshi Zhang

Electronic Theses and Dissertations

Future assembly technologies will involve higher automation levels, in order to satisfy increased micro scale or nano scale precision requirements. Traditionally, assembly using a top-down robotic approach has been well-studied and applied to micro-electronics and MEMS industries, but less so in nanotechnology. With the bloom of nanotechnology ever since the 1990s, newly designed products with new materials, coatings and nanoparticles are gradually entering everyone’s life, while the industry has grown into a billion-dollar volume worldwide. Traditionally, nanotechnology products are assembled using bottom-up methods, such as self-assembly, rather than with top-down robotic assembly. This is due to considerations of volume handling …

Design Of Submicron Structured Guided-Mode-Resonance Near-Infrared Polarizer, Marzia Zaman

Graduate Theses and Dissertations

The objective of this research is to design a larger submicron linear polarizer in the near-infrared wavelength range with a wide bandwidth which can be fabricated using the conventional thin-film microfabrication technology to reduce cost. For this purpose, a gold (Au) wire-grid transmission-type transverse-magnetic (TM) polarizer and a silicon (Si) wire-grid reflection-type TM polarizer, were designed using the guided-mode-resonance filter. The Au wire-grid TM polarizer of 700nm grating width and 1200nm grating period has 95% transmittance at 2400nm, more than 1000nm resonance peak bandwidth, and an extinction ratio (ER) of around 300 with a moderated level of sidebands. The 700nm …

Resonant Metagratings For Spectral And Angular Control Of Light For Colored Rooftop Photovoltaics, Floris Uleman, Andrea Cordaro, Andrea Alù, Albert Polman

Advanced Science Research Center

We designed semitransparent metagrating supercells that enable control over the spectrum and directivity of incident light for applications in photovoltaics with tailored angular appearance. The building block of the supercells is a 100–120 nm wide and 175 nm tall silicon nanowire that shows a strong Mie resonance around λ = 650 nm. By arranging the resonant Mie scatterers into metagratings of increasing pitch (675–1300 nm), we created a Lambertian-like scattering distribution over an angular range of choice. The millimeter-sized metasurfaces were fabricated using electron beam lithography and reactive ion etching. The fabricated metasurface nearly fully suppresses specular reflection on resonance …

Characterization Of Reactive Ion Etch Chemistries Using Direct Write Lithography, Dylan T. Martin-Abood

Theses and Dissertations

The DoD requires a variety of COTS and number of custom microelectronics to provide important functionality to critical military systems. Photolithography and DRIE are two techniques commonly used in the development of deep anisotropic features for the fabrication and modification of microelectronics and MEMS. However, standard photolithography techniques are ineffective for unique substrate geometries and DRIE processes require a chemical passivation step only applicable to Si substrates. This work confirmed the capability of RIE using DWL to perform deep, highly selective, anisotropic etching on elevated, non-circular substrates.

Structural And Electronic Properties Of The Pure And Stable Elemental 3d Topological Dirac Semimetal Α-Sn, Maya N. Nair, Ivan Madarevic, Umamahesh Thupakula, Gertjan Lippertz, Niels Claessens, Pin-Cheng Lin, Harsh Bana, Sara Gonzalez, Giovanni Di Santo, Luca Petaccia, Lino M.C. Pereira, Chris Van Haesendonck, Margriet J. Van Bael

Advanced Science Research Center

In-plane compressively strained α-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity, and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained α-Sn films on InSb(100), without heating the substrate during growth nor using any dopants. The α-Sn films were grown by molecular beam epitaxy, followed by experimental verification of the achieved chemical purity and structural properties of the film’s surface. Local insight into the surface morphology was …

Development Of Integrated Zinc Oxide Nanorods Coated Glass Substrate Sensing Device, Mohd Yusof Haziezol Helmi

Student Works (2020-2029)

A simple and practical cost-effective integrated zinc oxide (ZnO) nanorods coated glass substrate sensing device for humidity and formaldehyde vapor sensing applications is reported. The developed sensor device is composed of a commercial light-emitting diode (LED) and photodiode that correspondingly served as light source and detector which precisely positioned on a 3D printed sensor platform. A receiver circuit and Arduino platform were employed for signal amplification and processing. A uniform ZnO nanorods coating were grown on the surface of glass substrate via hydrothermal method by controlling the growth durations and coating length. A standard reference for the optimum working condition …

Noble-Transition Alloy Absorbers For Near-Infrared Hot-Carrier Optoelectronics, Sara Karoline Figueiredo Stofela

LSU Doctoral Dissertations

Optoelectronics is the field of technology concerned with the study and application of electronic devices that source, detect and control light. Here we focus on the optical communications field which relies on optical fiber systems to carry signals to their destinations operating in the near-infrared range. To improve the performance of current optical fiber systems, one of the paths is to develop better near-infrared photodetectors.

The current group of materials used for near-infrared photodetection relies in the III-V semiconductor family. Although their spectral photosensitivity correlates well with the near-infrared, response time performance and electronic circuit integration remain limited for this …

Arsenic Exposure And Methylation Efficiency In Relation To Oxidative Stress In Semiconductor Workers, Chih-Hong Pan, Ching-Yu Lin, Ching-Huang Lai, Hueiwang Anna Jeng

Community & Environmental Health Faculty Publications

This study examined associations between oxidative stress and arsenic (As) exposure and methylation efficiency in semiconductor workers. An As-exposed group (n = 427) and a control group (n = 91) were included. The As-exposure group (n = 427) included 149 maintenance staff members and 278 production staff members representing high As exposure and low As exposure, respectively. The control group included 91 administrative staff members with no or minimal As exposure. An occupational exposure assessment was conducted to assess personal As exposure by measuring As concentrations in urine, hair, and fingernails of the subjects. Urinary As(III), As(V), monomethylarsonic (MMA), and …

Fabrication, Characterization And Applications Of Highly Conductive Wet-Spun Pedot:Pss Fibers, Ruben Sarabia Riquelme

Theses and Dissertations--Chemical and Materials Engineering

Smart electronic textiles cross conventional uses to include functionalities such as light emission, health monitoring, climate control, sensing, storage and conversion of energy, etc. New fibers and yarns that are electrically conductive and mechanically robust are needed as fundamental building blocks for these next generation textiles.

Conjugated polymers are promising candidates in the field of electronic textiles because they are made of earth-abundant, inexpensive elements, have good mechanical properties and flexibility, and can be processed using low-cost large-scale solution processing methods. Currently, the main method to fabricate electrically conductive fibers or yarns from conjugated polymers is the deposition of the …

Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves

Graduate Theses, Dissertations, and Problem Reports (ETD)

Having been theorized in 1947, it was not until 2004 that graphene was first isolated. In the years since its isolation, graphene has been the subject of intense, world-wide study due to its incredibly diverse array of useful properties. Even though many billions of dollars have been spent on its development, graphene has yet to break out of the laboratory and penetrate mainstream industrial applications markets. This is because graphene faces a ‘grand challenge.’ Simply put, there is currently no method of manufacturing high-quality graphene on the industrial scale. This grand challenge looms particularly large for electronic applications where the …

Programming Of Floating-Gate Transistors For Nonvolatile Analog Memory Array, Haifa Abulaiha

Graduate Theses, Dissertations, and Problem Reports (ETD)

Since they were introduced, floating-gate (FG) transistors have been used as non-volatile digital memory. Recent research has shown that floating-gate transistors can be successfully used as analog memory, specifically as programmable voltage and current sources. However, their proliferation has been limited due to the complex programming procedure and the complex testing equipment. Analog applications such as field-programmable analog arrays (FPAAs) require hundreds to thousands of floating-gate transistors on a single chip which makes the programming process even more complicated and very challenging. Therefore, a simplified, compact, and low-power scheme to program FGs are necessary. This work presents an improved version …