Electronic Devices and Semiconductor Manufacturing Commons^™

Optimization Of Inductively Coupled Plasma Dry Etching For Planar Waveguide Fabrication., Lim Weng Hong

Student Works (2010-2019)

Optimization of the Inductively Coupled Plasma (ICP) dry etching process parameters has been carried out. Seven main etching characteristics were considered in order to produce good etching quality. These characteristics are glass etching rates, selectivity of chromium to glass etching rate, channel side wall roughness, channel side wall vertical profile, channel cleanliness, critical dimension and resolution. Several ICP parameters that are affecting the etching characteristic were optimized in this work. These optimised ICP parameters obtained from this work are ICP power (880 W), bias power (45 W), operating chamber pressure (10 mtorr), reactant gas composition, reactant gas flow rate (35sccm …

Giant Raman Enhancement On Nanoporous Gold Film By Conjugating With Nanoparticles For Single-Molecule Detection, Lihua Qian, Biswajit Das, Yan Li, Zhilin Yang

Electrical & Computer Engineering Faculty Research

Hot spots have the contradictively geometrical requirements for both the narrowest interstices to provide strong near-field coupling, and sufficient space to allow entrance of the analytes. Herein, a two-step method is employed to create hot spots within hybrid nanostructures, which consist of self-supported nanoporous gold films with the absorbed probes and subsequent nanoparticle conjugates without surface agents or mechanical motion. The molecules confined into 1 nm interstice exhibit 2.9 × 10⁷ times enhancement in Raman scattering compared to pure nanoporous gold. Giant enhancement primarily results from strong near-field coupling between nanopore and nanoparticle, which is theoretically confirmed by finite-difference …

Growth And Characterization Of Silicon Carbide Thin Films Using A Nontraditional Hollow Cathode Sputtering Technique, James Huguenin-Love

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC.

Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed …