The Photoluminescence Spectra Of Powders Of Zinc Oxide With Laser Excitation,
2019
Institute of Semiconductor Physics and Microelectronics at the NUUz. Tashkent, Uzbekistan
The Photoluminescence Spectra Of Powders Of Zinc Oxide With Laser Excitation, Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, Abdulla K. Kurbonov
Euroasian Journal of Semiconductors Science and Engineering
The original sensitive method of research of the nanopowders based on use of laser excitation and a multichannel spectrometer is offered. The developed method can be used for the analysis of quality of a wide class of the powders on the basis of laser spectroscopy of secondary radiation.
Laser Testing Of Silicon Wafers,
2019
Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan
Laser Testing Of Silicon Wafers, Zakirjan T. Azamatov, Ilya A. Kulagin, Kakhkhor P. Abdurakhmanov, Nigora A. N.A. Akbarova
Euroasian Journal of Semiconductors Science and Engineering
The possibility of detection of defects in silicon wafers by Fourier analysis of digital images obtained by laser introscopy is shown.
Features The Generalities Of I-V Curve Formation In Mosfet With A Common Drain,
2019
Tashkent University of Information Technologies, Tashkent, Uzbekistan.
Features The Generalities Of I-V Curve Formation In Mosfet With A Common Drain, Khayrulla K. Aripov, Akhmed M. Abdullayev, Shunkurjon T. Toshmatov
Euroasian Journal of Semiconductors Science and Engineering
The results of theoretical and experimental studies of the generalities of current-voltage characteristics curve formation of metal-oxide-semiconductor transistors of the common drain are presented. The principal difference between input and output characteristics of the common drain from the analogical characteristics in the common source is shown. The source-gate and source characteristics of a metal-oxide-semiconductor transistor in the common drain are given. Combined families of source-gate and source characteristics of a metal-oxide-semiconductor transistor in the common source and drain are obtained.
Organic Photodiodes On The Basis Of Cottonfiber/Polymer Composite,
2019
Institute of Semiconductor Physics and Microelectronics at the NUUz, Tashkent, Uzbekistan,
Organic Photodiodes On The Basis Of Cottonfiber/Polymer Composite, Jonibek J. Hamdamov, Anvar S. Zakirov, Abdugafur T. Mamadalimov
Euroasian Journal of Semiconductors Science and Engineering
In this paper, we report a study on the optical and the electrical properties of pure cotton fibers (CF) from chemically surface- and morphology-modified samples coated with poly [2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) polymer by using a dip-coating method. The efficiency of white light luminescence of cotton fibers coated with meh- MEH-PPV polymer increased and became much more intense in comparison with the luminescence of uncoated fibers and blue, green and red stripes were observed in the luminescence structure. The сurrent-voltage characteristic of sandwich-type devices consisting of successive layers of ITO (Indium doped tin oxide coated glass)-PEDOT-PSS (Poly (3,4-ethylenedioxythiophene)-Poly(styrenesulfonate)-CF/MEH-PPV-Ag showed that up …
Influence Of Impurities Of Refractory Elements On The Inefficiency Of Charge Transfer In Charged Communication Devices,
2019
National University of Uzbekistan named after Mirzo Ulugbek
Influence Of Impurities Of Refractory Elements On The Inefficiency Of Charge Transfer In Charged Communication Devices, Abdugafur T. Mamadalimov, Shakhrukh Kh. Daliev
Euroasian Journal of Semiconductors Science and Engineering
The influence of impurities of refractory elements on the inefficiency of charge transfer in charge-coupled devices is investigated. Found that the magnitude of the inefficiency of transfer directly proportional to the density of surface States and the density of surface States in the CCD registers, with the resulting n losses n ≤ 0.1 depends on the type specially introduced impurities. It is shown that in CCD structures doped with impurities Ti, Zr and Hf relative to the control structures, the charge loss is greater, and in doped with impurities W and Mo, the charge loss is less.
Influence Of Rhodium And Iridium Impurity Atoms On The Capacitive Characteristics Of Si-Siо2 Structures,
2019
National University of Uzbekistan named after Mirzo Ulugbek
Influence Of Rhodium And Iridium Impurity Atoms On The Capacitive Characteristics Of Si-Siо2 Structures, Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, Xotamjon J. Mansurov
Euroasian Journal of Semiconductors Science and Engineering
It was found that the doping of the semiconductor substrate with Rh and Ir atoms leads to the increase in the density of surface states at the Si – SiO2 interface. It is determined that the surface states, due to the presence of an impurity Rh and Ir are effective generation centers.
The Influence Of Γ -Irradiation On The Holographic Characteristics Of Chalcogenide Glassy Semiconductor,
2019
Institute of semiconductor physics and Microelectronics at the NUUz., Tashkent, Uzbekistan
The Influence Of Γ -Irradiation On The Holographic Characteristics Of Chalcogenide Glassy Semiconductor, Zakirjan T. Аzamatov, Mira R. Bekchanova, Timur Z. Azamatov
Euroasian Journal of Semiconductors Science and Engineering
Results of the research of holographic characteristics of chalcogenide glassy semiconductor films, under the influence of irradiation are presented. Found that in the range of radiation doses (roentgen) optical properties of (CGS) films and diffraction efficiency recorded holograms does not change. Also proved that the shelf life recorded holograms under certain conditions is 10 years or more.
Volt-Ampere Characteristics Of Mos Structures
Al-Al2o3-P-Cdte-Mo – In The Forward Direction Of Current,
2019
Karakalpak state University, Nukus, Uzbekistan
Volt-Ampere Characteristics Of Mos Structures Al-Al2o3-P-Cdte-Mo – In The Forward Direction Of Current, Abatbay K. Uteniyazov, Kanatbay A. Ismailov, Fatima T. Srajatdinova
Euroasian Journal of Semiconductors Science and Engineering
The results of studies of the direct branch of the current – voltage characteristic of the Al-Al2O3-p-CdTe-Mo structure with base thicknesses d ~ 8÷10 μm are presented. It was shown that, along with point defects and impurities, complex complexes participate in the recombination processes in the base of the structure under study. It was established that at low current densities in point of recombination processes point defects take part, and at high current densities, when the recombination rate reaches full saturation of U≈NR/τi, the recombination processes in the samples under study are determined by complex complexes within which the electrons …
The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences,
2019
Bukhara State University, Bukhara, Uzbekistan.
The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev
Euroasian Journal of Semiconductors Science and Engineering
This article discusses a multifunctional sensor based on a field-effect transistor with a p-n-junction. The sensor allows to register temperature, light intensity, pressure with high level of sensitivity. At the same time, ensuring the sensitivity of the structure to external influences is practically solved due to constructive changes. Due to constructive solutions, the proposed sensor based on a field-effect transistor greatly exceeds the similar diode structures in sensitivity.
Optical Power Meter For Diagnostics Of Fiber-Optic Communication Lines And Digital Multimeter,
2019
SPA “Physics-Sun” of the Uzbekistan Academy of Sciences, Tashkent, Uzbekistan
Optical Power Meter For Diagnostics Of Fiber-Optic Communication Lines And Digital Multimeter, Feruza A. Giyasova, B. Sh. Yuldashev, Ruslan G. Zakirov, Gulkhayo T. Murodillaeva
Euroasian Journal of Semiconductors Science and Engineering
A multifunctional optical power attenuation meter in fiber optic cables for widespread use is proposed in this article. The main feature of the proposed meter is the ability to perform of diagnostics of mechanical damage of fiber-optic communication lines and determine the attenuation degree of a signal in the fiber-optic path in the spectral ranges of 1270-1340 nm and 1520-1580 nm, as well as the measurement of voltage, current and resistance in electrical circuits. The possibility of using the meter for diagnostics of onboard fiber-optic communication lines is justified.
The Photoluminescence Spectra Of Powders Of Zinc Oxide With Laser Excitation,
2019
Institute of Semiconductor Physics and Microelectronics at the NUUz. Tashkent, Uzbekistan
The Photoluminescence Spectra Of Powders Of Zinc Oxide With Laser Excitation, Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, Abdulla K. Kurbonov
Euroasian Journal of Semiconductors Science and Engineering
The original sensitive method of research of the nanopowders based on use of laser excitation and a multichannel spectrometer is offered. The developed method can be used for the analysis of quality of a wide class of the powders on the basis of laser spectroscopy of secondary radiation.
Organic Photodiodes On The Basis Of Cotton
Fiber/Polymer Composite,
2019
Institute of Semiconductor Physics and Microelectronics at the NUUz, Tashkent, Uzbekistan,
Organic Photodiodes On The Basis Of Cotton Fiber/Polymer Composite, Jonibek J. Hamdamov, Anvar S. Zakirov, Abdugafur T. Mamadalimov
Euroasian Journal of Semiconductors Science and Engineering
In this paper, we report a study on the optical and the electrical properties of pure cotton fibers (CF) from chemically surface- and morphology-modified samples coated with poly [2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) polymer by using a dip-coating method. The efficiency of white light luminescence of cotton fibers coated with meh- MEH-PPV polymer increased and became much more intense in comparison with the luminescence of uncoated fibers and blue, green and red stripes were observed in the luminescence structure. The сurrent-voltage characteristic of sandwich-type devices consisting of successive layers of ITO (Indium doped tin oxide coated glass)-PEDOT-PSS (Poly (3,4-ethylenedioxythiophene)-Poly(styrenesulfonate)-CF/MEH-PPV-Ag showed that up …
Radiation And Convective Losses In The Heat Sink Channel Of Photovoltaic-Thermal System,
2019
Institute of Semiconductor Physics and Microelectronics at the NUUz, Tashkent, Uzbekistan
Radiation And Convective Losses In The Heat Sink Channel Of Photovoltaic-Thermal System, Oskar F. Tukhfatullin, Ramizulla A. Muminov
Euroasian Journal of Semiconductors Science and Engineering
. The processes of heat transfer in the channel of a liquid photovoltaic/thermal system of a flat construction without forced circulation are considered. A method of calculating the heat transfer coefficients by radiation and convection, the Nusselt and Reynolds numbers for a given photovoltaic/thermal system was proposed. It was determined that the processes of convective heat transfer in a flat photovoltaic/thermal system installed in the territory of the Republic of Uzbekistan at an optimum angle of inclination equal to the geographical latitude of the place of operation should be considered as for parallel plates located at tilt angle not more …
Serial And Shuntable Resistance Of Cigs Solar Photo-Electric Module In The Conditions Of Real Solar Lighting At Various Temperatures,
2019
International Solar Energy Institute, Tashkent, Uzbekistan
Serial And Shuntable Resistance Of Cigs Solar Photo-Electric Module In The Conditions Of Real Solar Lighting At Various Temperatures, Rustam R. Kobulov, Nuriddin A. Matchanov, Omonboy K. Ataboev, Farrukh A. Akbarov
Euroasian Journal of Semiconductors Science and Engineering
The current-voltage characteristics of the solar photovoltaic module, based on a thin-film polycrystalline semiconductor binary compound Cu(In, Ga)Se2, under real solar illumination (Prad=780 ± 30 W/m2), in the temperature range of 25 °C-50 °C, have been studied and the values of serial and shunt resistance are determined. It has been established that with increasing temperature, the magnitudes of the series and shunting resistance of the solar photovoltaic module decrease, which is most likely due to the modulation of the resistance of the n-CdS buffer front layer.
Influence Of Heat Treatment On The Behavior
Of Deep Levels In Silicon Doped By Tungsten,
2019
Institute of Semiconductor Physics and Microelectronics at the NUUz., Tashkent, Uzbekistan
Influence Of Heat Treatment On The Behavior Of Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova
Euroasian Journal of Semiconductors Science and Engineering
By means of Deep Level Transient Spectroscopy the kinetics of the annealing of the levels of tungsten in silicon during heat treatment in the temperature range 150÷4000С was studied. It was found a non-monotonic change in the concentration of deep levels Ec-0.30 eV and Ec-0.39 eV under isothermal annealing: the concentrations of both levels at short times increase, then the concentration level of Ec-0.30 eV sharply decreases, and the reduction of the concentration of deep level Ec-0.39 eV is much slower.
Infrared Spectroscopy Of Silicon Doped By Stannum
And Manganese,
2019
Institute of semiconductor physics and Microelectronics at the NUUz., Tashkent, Uzbekistan
Infrared Spectroscopy Of Silicon Doped By Stannum And Manganese, Sharifa B. Utamuradova, Ravshanbek M. Ergashev, Khusniddin J. Matchanov
Euroasian Journal of Semiconductors Science and Engineering
The processes of defect formation in silicon doped by tin and manganese and their interaction with uncontrolled impurities were studied by infrared spectroscopy.It was found that the presence of impurities of transition and isovalent elements leads to a technological decrease in the concentration of process impurities – oxygen and carbon. It was found that the introduction of manganese in Si leads to a strong decrease in the concentration of interstitial optically active oxygen Noopt: in rapidly cooled samples Si there is a decrease of Noopt by 50% compared to the original Si.
Structural Features Of The Solid Solution (Gaas)1-X-Y(Ge2)X(Znse)Y With Quantum Dots (0≤X≤0,17; 0≤Y≤0,14),
2019
Andijan State University. Andijan, Uzbekistan.
Structural Features Of The Solid Solution (Gaas)1-X-Y(Ge2)X(Znse)Y With Quantum Dots (0≤X≤0,17; 0≤Y≤0,14), Sirojiddin Z. Zainabidinov, Khatamjon J. Mansurov, Akramjon Y. Boboev, Hkushruy A. Makhmudov
Euroasian Journal of Semiconductors Science and Engineering
X-ray diffraction studies showed that the resulting film has a sphalerite structure and is single-crystal with the (100) orientation. The lattice parameter of the film is af = 0.56697 nm. By atomic force microscope was shown the possibility of obtaining a semiconductor heterostructure with quantum dots by the method of liquid phase epitaxy.
Study Of The Morphological And Electrical Properties Of Films Of Solid Solution Znxsn1-Хse Obtained
By The Method Of Cmbd,
2019
SPA «Physics-Sun» of the Academy of Sciences of the Republic of Tashkent, Uzbekistan.
Study Of The Morphological And Electrical Properties Of Films Of Solid Solution Znxsn1-Хse Obtained By The Method Of Cmbd, Kudrat M. Kuchkarov, Takhir M. Razykov, Bobur A. Ergashev, Rukhiddin T. Yuldoshov
Euroasian Journal of Semiconductors Science and Engineering
The ZnXSn1-XSe solid solution films were fabricated by the chemical molecular beam deposition (CMBD) method. The sources used were ZnSe and SnSe compounds of stoichiometric composition at the substrate temperature of 5600С. The morphological and electrophysical properties of the ZnXSn1-XSe solid solution films are investigated. Scanning electron microscope images showed that the grain sizes of the films are 8÷20 microns. The structural parameters of the obtained films are given. The electrical conductivity of the films was 15 ÷ 1 • 10-6 (Ohm·cm) -1 depending on the composition of the solid solution.
Capacitive Spectroscopy Of Defects In Semiconductors, Doped By Atoms Of Gadolinium,
2019
National University of Uzbekistan, Tashkent, Uzbekistan
Capacitive Spectroscopy Of Defects In Semiconductors, Doped By Atoms Of Gadolinium, Shoakhriyor B. Norkulov, Khodjakbar S. Daliev, Makhmud Sh. Dehkanov, Uktam K. Erugliev
Euroasian Journal of Semiconductors Science and Engineering
The processes of formation of defects in silicon, doped by gadolinium are investigated by the method of DLTS. It is shown that in diffusion the introduction of Gd in the Si leads to the formation of deep levels with ionization energies Ec–0.23 eV, Ec–0.35 eV, Ec–0.41 eV and Ec–0.54 eV and a capture cross section of electrons n: 410-17cm-2, 210-15 cm2, 1.110-16 cm2 and 1.510-15 cm2, respectively, and in samples p-Si found only one level with Ev+0.32 eV.
Features The Generalities Of I-V Curve Formation
In Mosfet With A Common Drain,
2019
Tashkent University of Information Technologies, Tashkent, Uzbekistan.
Features The Generalities Of I-V Curve Formation In Mosfet With A Common Drain, Khayrulla K. Aripov, Akhmed M. Abdullayev, Shunkurjon T. Toshmatov
Euroasian Journal of Semiconductors Science and Engineering
The results of theoretical and experimental studies of the generalities of current-voltage characteristics curve formation of metal-oxide-semiconductor transistors of the common drain are presented. The principal difference between input and output characteristics of the common drain from the analogical characteristics in the common source is shown. The source-gate and source characteristics of a metal-oxide-semiconductor transistor in the common drain are given. Combined families of source-gate and source characteristics of a metal-oxide-semiconductor transistor in the common source and drain are obtained.
