Nanotechnology Fabrication Commons^™

Design And Implementation Of An Integrated Biosensor Platform For Lab-On-A-Chip Diabetic Care Systems, Khandaker Abdullah Al Mamun

Doctoral Dissertations

Recent advances in semiconductor processing and microfabrication techniques allow the implementation of complex microstructures in a single platform or lab on chip. These devices require fewer samples, allow lightweight implementation, and offer high sensitivities. However, the use of these microstructures place stringent performance constraints on sensor readout architecture. In glucose sensing for diabetic patients, portable handheld devices are common, and have demonstrated significant performance improvement over the last decade. Fluctuations in glucose levels with patient physiological conditions are highly unpredictable and glucose monitors often require complex control algorithms along with dynamic physiological data. Recent research has focused on long term …

Genotoxicity Of Graphene In Escherichia Coli, Ananya Sharma

Graduate Theses and Dissertations

Rapid advances in nanotechnology necessitate assessment of the safety of nanomaterials in the resulting products and applications. One key nanomaterial attracting much interest in many areas of science and technology is graphene. Graphene is a one atom thick carbon allotrope arranged in a two-dimensional honeycomb lattice. In addition to being extremely thin, graphene has several extraordinary physical properties such as its exceptional mechanical strength, thermal stability, and high electrical conductivity. Graphene itself is relatively chemically inert and therefore pristine graphene must undergo a process called functionalization, which is combination of chemical and physical treatments that change the properties of graphene, …

Investigation Of Optical Properties Of Zinc Oxide Photodetector, Tyler Chism

Graduate Theses and Dissertations

UV photodetection devices have many important applications for uses in biological detection, gas sensing, weaponry detection, fire detection, chemical analysis, and many others. Today’s photodetectors often utilize semiconductors such as GaAs to achieve high responsivity and sensitivity. Zinc oxide, unlike many other semiconductors, is cheap, abundant, non-toxic, and easy to grow different morphologies at the micro and nano scale. With the proliferation of these devices also comes the impending need to further study optics and photonics in relation to phononics and plasmonics, and the general principles underlying the interaction of photons with solid state matter and, specifically, semiconductors. For this …

Heating Element Including Carbon Nanotube (Cnt) Layer, Santhosh Kumar Loganathan, Virginie Rollin, Daewon Kim

Publications

Apparatus , materials , and techniques and techniques herein can include providing a deposited layer comprising a com posite material including carbon nanotubes ( CNTs ) . Accord ing to various examples , the composite can be applied to a substrate such as using a solution containing CNTs and other constituents such as sulfur . The solution can be spray applied to a substrate , or spin - coated upon a substrate , such as to provide a uniform , conductive , and optically - transpar ent film layer . In one application , such a film layer can be …

Advanced Graphene Microelectronic Devices, Chowdhury G. Al-Amin

FIU Electronic Theses and Dissertations

The outstanding electrical and material properties of Graphene have made it a promising material for several fields of analog applications, though its zero bandgap precludes its application in digital and logic devices. With its remarkably high electron mobility at room temperature, Graphene also has strong potential for terahertz (THz) plasmonic devices. However there still are challenges to be solved to realize Graphene’s full potential for practical applications.

In this dissertation, we investigate solutions for some of these challenges. First, to reduce the access resistances which significantly reduces the radio frequency (RF) performance of Graphene field effect transistors (GFETs), a novel …

New Flexible Channels For Room Temperature Tunneling Field Effect Transistors, Boyi Hao, Anjana Asthana, Paniz K. Hazaveh, Paul L. Bergstrom, Douglas Banyai, Madhusudan A. Savaikar, John A. Jaszczak, Yoke Khin Yap

John Jaszczak

No abstract provided.

Electric Field Controlled Strain Induced Switching Of Magnetization Of Galfenol Nanomagnets In Magneto-Electrically Coupled Multiferroic Stack, Hasnain Ahmad

Theses and Dissertations

The ability to control the bi-stable magnetization states of shape anisotropic single domain nanomagnets has enormous potential for spawning non-volatile and energy-efficient computing and signal processing systems. One of the most energy efficient switching methods is to adopt a system of a 2-phase multiferroic nanomagnet, where a voltage applied on the piezoelectric layer generates a strain in it and the strain is elastically transferred to the magnetostrictive nanomagnet which rotates the magnetization states of the nanomagnet at room temperature via the converse magnet-electric effect. Recently, it has been demonstrated that the magnetization of a Co nanomagnet can be switched between …

Hybrid Straintronics-Spintronics: Energy-Efficient Non-Volatile Devices For Boolean And Non-Boolean Computation, Ayan K. Biswas

Theses and Dissertations

Research in future generation computing is focused on reducing energy dissipation while maintaining the switching speed in a binary operation to continue the current trend of increasing transistor-density according to Moore’s law. Unlike charge-based CMOS technology, spin-based nanomagnetic technology, based on switching bistable magnetization of single domain shape-anisotropic nanomagnets, has the potential to achieve ultralow energy dissipation due to the fact that no charge motion is directly involved in switching. However, switching of magnetization has not been any less dissipative than switching transistors because most magnet switching schemes involve generating a current to produce a magnetic field, or spin transfer …

The Dawn Of New Quantum Dots: Synthesis And Characterization Of Ge1-Xsnx Nanocrystals For Tunable Bandgaps., Richard J. Esteves

Theses and Dissertations

Ge_1-xSn_x alloys are among a small class of benign semiconductors with composition tunable bandgaps in the near-infrared spectrum. As the amount of Sn is increased the band energy decreases and a transition from indirect to direct band structure occurs. Hence, they are prime candidates for fabrication of Si-compatible electronic and photonic devices, field effect transistors, and novel charge storage device applications. Success has been achieved with the growth of Ge_1-xSn_x thin film alloys with Sn compositions up to 34%. However, the synthesis of nanocrystalline alloys has proven difficult due to larger discrepancies (~14%) in …

Nanosphere Lithography And Its Application In Rapid And Economic Fabrication Of Plasmonic Hydrogenated Amorphous Silicon Photovoltaic Devices, Chenlong Zhang

Dissertations, Master's Theses and Master's Reports

Solar photovoltaic (PV) devices harvest energy from solar radiation and convert it to electricity. PV technologies, as an alternative to traditional fossil fuels, use clean and renewable energy while minimizing pollution. For decades researchers have been developing thin film solar cells as an important alternatives to the relatively expensive bulk crystal solar cell technology. Among those, hydrogenated amorphous silicon (a-Si:H) solar cells prevails for good efficiency, non-toxic and materially abundant nature. However, a-Si:H thickness must be minimized to prevent light induced degradation, so optical enhancement is necessary. Light manipulation has to be applied and carefully engineered to trap light within …

Optical Investigations Of Ingan Heterostructures And Gesn Nanocrystals For Photonic And Phononic Applications: Light Emitting Diodes And Phonon Cavities, Shopan D. Hafiz

Theses and Dissertations

InGaN heterostructures are at the core of blue light emitting diodes (LEDs) which are the basic building blocks for energy efficient and environment friendly modern white light generating sources. Through quantum confinement and electronic band structure tuning on the opposite end of the spectrum, Ge_1−xSn_x alloys have recently attracted significant interest due to its potential role as a silicon compatible infra-red (IR) optical material for photodetectors and LEDs owing to transition to direct bandgap with increasing Sn. This thesis is dedicated to establishing an understanding of the optical processes and carrier dynamics in InGaN heterostructures for achieving …

Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian

Theses and Dissertations

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …

Electron Beam Induced Deposition Of Highly Conductive Copper Nanowires From Bulk Liquids, Amjad M. Syam

Theses and Dissertations--Electrical and Computer Engineering

Electron-beam induced deposition (EBID) is a position-controlled technique that can directly fabricate nanometer-sized structures in functional materials. In the standard process, a gaseous precursor delivers the desired substance to the substrate for deposition. However, the material purity from these precursors is typically poor, which often negatively affects the functional properties of the deposit. Recently, bulk liquid precursors have been investigated as promising reactants for high purity deposition without the need for post-processing. In this work, EBID from bulk liquids is shown to yield highly conductive nanowire deposits. Aqueous solutions containing copper sulfate (CuSO₄) and sulfuric acid (H_{2 …}

Epitaxial Growth Of Si-Ge-Sn Alloys For Optoelectronic Device Application, Aboozar Mosleh

Graduate Theses and Dissertations

Microelectronics industry has experienced a tremendous change over the last few decades and has shown that Moore’s law has been followed by doubling the number of transistors on the chip every 18 months. However, continuous scaling down of the transistors size is reaching the physical limits and data transfer through metal interconnects will not be able to catch up with the increasing data processing speed in the future. Therefore, optical data transfer between chips and on-chip has been widely investigated. Silicon based optoelectronics has received phenomenal attention since Si has been the core material on which microelectronic industry has been …

Cobalt Ferrite Nanoparticles Fabricated Via Co-Precipitation In Air: Overview Of Size Control And Magnetic Properties, Dennis Toledo

FIU Electronic Theses and Dissertations

Cobalt Ferrite has important, size-dependent magnetic properties. Consequently, an overview of particle size is important. Co-precipitation in air was the fabrication method used because it is comparatively simple and safe. The effects of three different reaction times including 1, 2, 3 hour(s) on particle size were compared. Also, the effectiveness of three different capping agents (Oleic Acid, Polyvinylpyrollidone (PVP), and Trisodium Citrate) in reducing aggregation and correspondingly particle size were examined. Using Welch’s analysis of variance (ANOVA) and the relevant post hoc tests, there was no significant difference (p=0.05) between reaction times of 1 hour and 2 hours, but there …

Skybridge: A New Nanoscale 3-D Computing Framework For Future Integrated Circuits, Mostafizur Rahman

Doctoral Dissertations

Continuous scaling of CMOS has been the major catalyst in miniaturization of integrated circuits (ICs) and crucial for global socio-economic progress. However, continuing the traditional way of scaling to sub-20nm technologies is proving to be very difficult as MOSFETs are reaching their fundamental performance limits [1] and interconnection bottleneck is dominating IC operational power and performance [2]. Migrating to 3-D, as a way to advance scaling, has been elusive due to inherent customization and manufacturing requirements in CMOS architecture that are incompatible with 3-D organization. Partial attempts with die-die [3] and layer-layer [4] stacking have their own limitations [5]. We …

Skin Effect Suppression In Infrared-Laser Irradiated Planar Multi-Walled Carbon Nanotube/ Cu Conductors, Kamran Keramatnejad, Yang Gao, Yunshen Zhou, Hossein Rabiee Glogir, Mengmeng Wang, Yongfeng Lu

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Skin effect suppression in planar multi-walled carbon nanotube (MWCNT)/Copper (Cu) conductors was realized at the 0-10 MHz frequency range through infrared laser irradiation of MWCNTs, which were coated on the surface of the Cu substrate via the electrophoretic deposition (EPD) method. The effect of laser irradiation and its power density on electrical and structural properties of the MWCNT/Cu conductors was investigated using a wavelength-tunable CO2 laser and then comparing the performance of the samples prepared at different conditions with that of pristine Cu. The irradiation at λ=9.219 μm proved to be effective in selective delivery of energy towards depths close …

A Comparative Study Of Polyurethane Nanofibers With Different Patterns And Its Analogous Nanofibers Containing Mwcnts, Javier Macossay-Torres, Faheem A. Sheikh, Hassan Ahmad, Hern Kim, Gary L. Bowlin

Chemistry Faculty Publications and Presentations

Tissue engineering is a multidisciplinary field that has evolved in various dimensions in recent years. One of the main aspects in this field is the proper adjustment and final compatibility of implants at the target site of surgery. For this purpose, it is desired to have the materials fabricated at the nanometer scale, since these dimensions will ultimately accelerate the fixation of implants at the cellular level. In this study, electrospun polyurethane nanofibers and their analogous nanofibers containing MWCNTs are introduced for tissue engineering applications. Since MWCNTs agglomerate to form bundles, a high intensity sonication procedure was used to disperse …

Mass-Positioning Of Nanodiamonds Using Squeegee Technique, Ran Cui, Mikhail Y. Shalaginov, Vladimir M. Shalaev

The Summer Undergraduate Research Fellowship (SURF) Symposium

Fluorescent color centers in diamond nanocrystals have recently become the focus of researchers because of their potential applications in quantum information processing, nano-sensing, biomarking, and bioimaging. One of the biggest challenges in working with nanodiamonds is how to position them precisely and efficiently to create strong interaction with nanoscale photonic structures. The most popular methods to position nanodiamonds are spin-coating and transporting via scanning probe microscope tip. On the one hand, spin-coating, where nanodiamonds are randomly located, is not precise; on the other hand, the tip-based technique, where a single nanodiamond is picked and dropped, is tedious and time-consuming. Hence, …

Simulating Nanowires And Ultra-Thin Body Transistors Using Nemo5 On Nanohub.Org, Liang Yuan Dai, James E. Fonseca, Chu Yuan Chen, Gerhard Klimeck

The Summer Undergraduate Research Fellowship (SURF) Symposium

During the past twenty years, the most important aspects of semiconductor electronics have advanced into the nanometer range, resulting in exponential increases of microprocessor computing performance. As the size of electrical components continues to shrink, the cost of experimental research and industrial fabrication in this field has increased dramatically. Thus, the development of accurate nanoscale model simulations becomes necessary as a measure to decrease the high financial expenses of advancing semiconductor technology. This simulator supports atomistic modeling in order to provide an accurate description of the nanoscale devices, as current electrical components operate in the quantum regime and are affected …