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Voltage Ramp-Rate Dependence Of Dc Breakdown In Polymeric Insulators: Physical Models Versus Data, Allen Andersen, Krysta Moser, JR Dennison 2016 Utah State University

Voltage Ramp-Rate Dependence Of Dc Breakdown In Polymeric Insulators: Physical Models Versus Data, Allen Andersen, Krysta Moser, Jr Dennison

Posters

Purpose/Aim

The standard handbook values for dielectric breakdown strength of necessity come from accelerated test methods. In some applications the breakdown voltage may vary significantly with voltage ramp rates; therefore, a theoretical model for the ramp-rate dependence of breakdown is needed to extrapolate from realistic tests to long-duration material service lifetimes.

Experimental/Modeling methods

Series of step-up to breakdown tests were performed for ramp rates from 0.5 to 500 V/s for biaxially-oriented polypropylene (BOPP), low density polyethylene (LDPE), and polyimide (PI) films. The data were fit with standard empirical methods, as well as two physics-based defect-driven models.

Results/discussion

Table 1 in …


Low-Temperature Fcc To L10 Phase Transformation In Copt(Bi) Nanoparticles, Frank M. Abel, Vasilis Tzitzios, David J. Sellmeyer, George C. Hadjipanayis 2016 University of Delaware

Low-Temperature Fcc To L10 Phase Transformation In Copt(Bi) Nanoparticles, Frank M. Abel, Vasilis Tzitzios, David J. Sellmeyer, George C. Hadjipanayis

Nebraska Center for Materials and Nanoscience: Faculty Publications

This work is focused on the effects of Bi substitution on the synthesis of CoPt nanoparticles with the L10 structure using a modified organometallic approach. The structural and magnetic properties of the nanoparticles have been studied and compared directly with those of CoPt nanoparticles synthesized by the same tech- nique but in the absence of Bi substitution. The as-synthesized particles at 330 ◦C have an average size of 11.7 nm and a partially ordered L10 phase with a coercivity of 1 kOe. The coercivity is increased to 9.3 kOe and 12.4 kOe after annealing for 1 hour at 600 …


Electronic Structure And Stability Of Ligated Superatoms And Bimetallic Clusters, William H. Blades 2016 VCU Department of Physics

Electronic Structure And Stability Of Ligated Superatoms And Bimetallic Clusters, William H. Blades

Theses and Dissertations

Quantum confinement in small metal clusters leads to a bunching of states into electronic shells reminiscent of shells in atoms. The addition of ligands can tune the valence electron count and electron distribution in metal clusters. A combined experimental and theoretical study of the reactivity of methanol with AlnIm− clusters reveals that ligands can enhance the stability of clusters. In some cases the electronegative ligand may perturb the charge density of the metallic core generating active sites that can lead to the etching of the cluster. Also, an investigation is conducted to understand how the bonding …


Modification Of The G-Phonon Mode Of Graphene By Nitrogen Doping, Pavel V. Lukashev, Liuyan Zhao, Tula R. Paudel, Theanne Schiros, Noah Hurley, Evgeny Y. Tsymbal, Aron Pinczuk, Abhay Pasupathy, Rui He 2016 University of Nothern Iowa

Modification Of The G-Phonon Mode Of Graphene By Nitrogen Doping, Pavel V. Lukashev, Liuyan Zhao, Tula R. Paudel, Theanne Schiros, Noah Hurley, Evgeny Y. Tsymbal, Aron Pinczuk, Abhay Pasupathy, Rui He

Nebraska Center for Materials and Nanoscience: Faculty Publications

The effect of nitrogen doping on the phonon spectra of graphene is analyzed. In particular, we employ first-principles calculations and scanning Raman analysis to investigate the dependence of phonon frequencies in graphene on the concentration of nitrogen dopants. We demonstrate that the G phonon frequency shows oscillatory behavior as a function of nitrogen concentration. We analyze different mechanisms which could potentially be responsible for this behavior, such as Friedel charge oscillations around the localized nitrogen impurity atom, the bond length change between nitrogen impurity and its nearest neighbor carbon atoms, and the long-range interactions of the nitrogen point defects. We …


Light Sensitive Memristor With Bi-Directional And Wavelength-Dependent Conductance Control, P. Maier, F. Hartmann, Mariama Rebello Sousa Dias, M. Emmerling, C. Schneider, L. K. Castelano, M. Kamp, G. E. Marques, V. Lopez-Richard, L. Worschech, S. Höfling 2016 University of Richmond

Light Sensitive Memristor With Bi-Directional And Wavelength-Dependent Conductance Control, P. Maier, F. Hartmann, Mariama Rebello Sousa Dias, M. Emmerling, C. Schneider, L. K. Castelano, M. Kamp, G. E. Marques, V. Lopez-Richard, L. Worschech, S. Höfling

Physics Faculty Publications

We report the optical control of localized charge on positioned quantum dots in an electro-photosensitive memristor. Interband absorption processes in the quantum dot barrier matrix lead to photogenerated electron-hole-pairs that, depending on the applied bias voltage, charge or discharge the quantum dots and hence decrease or increase the conductance. Wavelength-dependent conductance control is observed by illumination with red and infrared light, which leads to charging via interband and discharging via intraband absorption. The presented memristor enables optical conductance control and may thus be considered for sensory applications in artificial neural networks as light-sensitive synapses or optically tunable memories.


Time-Resolved Photoluminescence Studies Of Point Defects In Gan, Joy Dorene McNamara 2016 Virginia Commonwealth University

Time-Resolved Photoluminescence Studies Of Point Defects In Gan, Joy Dorene Mcnamara

Theses and Dissertations

Time-resolved photoluminescence (TRPL) measurements paired with steady-state photoluminescence (SSPL) measurements can help to determine the PL lifetime, shape and position of unresolved bands, capture coefficients, and concentrations of free electrons and defects.PL bands that are obscured in the SSPL spectra can be accurately revealed by TRPL measurements. TRPL measurements are able to show if the PL band originates from an internal transition between different states of the same defect. The main defect-related PL bands in high-purity GaN grown by hydride vapor phase epitaxy (HVPE) which have been investigated are the ultraviolet, blue, green, yellow and red luminescence bands (UVL, BL, …


First-Principles Studies Of Group Iv And Group V Related Two Dimensional Materials, Gaoxue Wang 2016 Michigan Technological University

First-Principles Studies Of Group Iv And Group V Related Two Dimensional Materials, Gaoxue Wang

Dissertations, Master's Theses and Master's Reports

Two dimensional (2D) materials have been extensively studied due to their novel properties and technologically important applications. Especially, the discovery of graphene has stimulated an avalanche of investigations to exploit its novel properties for applications at nanoscale. In the post-silicon era, graphene has been widely regarded as the most promising building blocks for the electronic devices. However, its metallic nature together with sensitivity to the environment leads to somewhat limited scope of applications. A finite band gap in a material is known to be essential for the fabrication of devices such as transistors. Such a limitation associated with graphene has …


Mimicking Of Pulse Shape-Dependent Learning Rules With A Quantum Dot Memristor, P. Maier, F. Hartmann, Mariama Rebello Sousa Dias, M. Emmerling, C. Schneider, L. K. Castelano, M. Kamp, G. E. Marques, V. Lopez-Richard, S. Höfling 2016 University of Richmond

Mimicking Of Pulse Shape-Dependent Learning Rules With A Quantum Dot Memristor, P. Maier, F. Hartmann, Mariama Rebello Sousa Dias, M. Emmerling, C. Schneider, L. K. Castelano, M. Kamp, G. E. Marques, V. Lopez-Richard, S. Höfling

Physics Faculty Publications

We present the realization of four different learning rules with a quantum dot memristor by tuning the shape, the magnitude, the polarity and the timing of voltage pulses. The memristor displays a large maximum to minimum conductance ratio of about 57 000 at zero bias voltage. The high and low conductances correspond to different amounts of electrons localized in quantum dots, which can be successively raised or lowered by the timing and shapes of incoming voltage pulses. Modifications of the pulse shapes allow altering the conductance change in dependence on the time difference. Hence, we are able to mimic different …


Non-Conventional Approaches To Syntheses Of Ferromagnetic Nanomaterials, Dustin M. Clifford 2016 Virginia Commonwealth University

Non-Conventional Approaches To Syntheses Of Ferromagnetic Nanomaterials, Dustin M. Clifford

Theses and Dissertations

The work of this dissertation is centered on two non-conventional synthetic approaches to ferromagnetic nanomaterials: high-throughput experimentation (HTE) (polyol process) and continuous flow (CF) synthesis (aqueous reduction and the polyol process). HTE was performed to investigate phase control between FexCo1-x and Co3-xFexOy. Exploration of synthesis limitations based on magnetic properties was achieved by reproducing Ms=210 emu/g. Morphological control of FexCo1-x alloy was achieved by formation of linear chains using an Hext. The final study of the FexCo1-x chains used DoE to …


Anisotropy, Phonon Modes, And Free Charge Carrier Parameters In Monoclinic Β-Gallium Oxide Single Crystals, Mathias Schubert, Rafal Korlacki, Sean Knight, Tino Hofmann, Stefan Schöche, Vanya Darakchieva, Erik Janzén, Bo Monemar, Daniela Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Yoshinao Kumagai, Ken Goto, Akito Kuramata, S. Yamakoshi, Masataka Higashiwaki 2016 University of Nebraska-Lincoln

Anisotropy, Phonon Modes, And Free Charge Carrier Parameters In Monoclinic Β-Gallium Oxide Single Crystals, Mathias Schubert, Rafal Korlacki, Sean Knight, Tino Hofmann, Stefan Schöche, Vanya Darakchieva, Erik Janzén, Bo Monemar, Daniela Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Yoshinao Kumagai, Ken Goto, Akito Kuramata, S. Yamakoshi, Masataka Higashiwaki

Department of Electrical and Computer Engineering: Faculty Publications

We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and far-infrared active modes. We apply our model approach to monoclinic β-Ga2O3 single-crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and (2̅01), are investigated by generalized spectroscopic ellipsometry within infrared and far-infrared spectral regions. We determine the frequency dependence of 4 independent β-Ga2O3 Cartesian dielectric function tensor elements by matching large sets of experimental data using a point-by-point data inversion approach. From matching our monoclinic …


Theory Of Magnon Motive Force In Chiral Ferromagnets, Utkan Güngördü, Alexey Kovalev 2016 University of Nebraska-Lincoln

Theory Of Magnon Motive Force In Chiral Ferromagnets, Utkan Güngördü, Alexey Kovalev

Department of Physics and Astronomy: Faculty Publications

We predict that magnon motive force can lead to temperature dependent, nonlinear chiral damping in both conducting and insulating ferromagnets. We estimate that this damping can significantly influence the motion of skyrmions and domain walls at finite temperatures. We also find that in systems with low Gilbert damping moving chiral magnetic textures and resulting magnon motive forces can induce large spin and energy currents in the transverse direction.


Spin Torque And Nernst Effects In Dzyaloshinskii-Moriya Ferromagnets, Alexey Kovalev, Vladimir Zyuzin 2016 University of Nebraska - Lncoln

Spin Torque And Nernst Effects In Dzyaloshinskii-Moriya Ferromagnets, Alexey Kovalev, Vladimir Zyuzin

Department of Physics and Astronomy: Faculty Publications

We predict that a temperature gradient can induce a magnon-mediated intrinsic torque in systems with a nontrivial magnon Berry curvature. With the help of a microscopic linear response theory of nonequilibrium magnon-mediated torques and spin currents we identify the interband and intraband components that manifest in ferromagnets with Dzyaloshinskii-Moriya interactions and magnetic textures. To illustrate and assess the importance of such effects, we apply the linear response theory to the magnon-mediated spin Nernst and torque responses in a kagome lattice ferromagnet.


Stability Of Skyrmion Lattices And Symmetries Of Quasi-Two-Dimensional Chiral Magnets, Utkan Güngördü, Rabindra Nepal, Oleg A. Tretiakov, Kirill D. Belashchenko, Alexey Kovalev 2016 University of Nebraska-Lincoln

Stability Of Skyrmion Lattices And Symmetries Of Quasi-Two-Dimensional Chiral Magnets, Utkan Güngördü, Rabindra Nepal, Oleg A. Tretiakov, Kirill D. Belashchenko, Alexey Kovalev

Department of Physics and Astronomy: Faculty Publications

Recently there has been substantial interest in realizations of skyrmions, in particular in quasi-two-dimensional (2D) systems due to increased stability resulting from reduced dimensionality. A stable skyrmion, representing the smallest realizable magnetic texture, could be an ideal element for ultradense magnetic memories. Here we use the most general form of the quasi-2D free energy with Dzyaloshinskii-Moriya interactions constructed from general symmetry considerations reflecting the underlying system. We predict that the skyrmion phase is robust and it is present even when the system lacks the in-plane rotational symmetry. In fact, the lowered symmetry leads to increased stability of vortex-antivortex lattices with …


Magnetoelectric Domain Wall Dynamics And Its Implications For Magnetoelectric Memory, Kirill D. Belashchenko, Oleg Tchernyshyov, Alexey Kovalev, Oleg A. Tretiakov 2016 University of Nebraska-Lincoln

Magnetoelectric Domain Wall Dynamics And Its Implications For Magnetoelectric Memory, Kirill D. Belashchenko, Oleg Tchernyshyov, Alexey Kovalev, Oleg A. Tretiakov

Department of Physics and Astronomy: Faculty Publications

Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr2O3 is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr2O3, the maximal mobility of 0.1 m/(s Oe) is reached at E = 0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr2O3 …


Ferroelectric Polymer Nanopillar Arrays On Flexible Substrates By Reverse Nanoimprint Lithography, Jingfeng Song, Haidong Lu, Keith Foreman, Shumin Li, Li Tan, Shireen Adenwalla, Alexei Gruverman, Stephen Ducharme 2016 University of Nebraska-Lincoln

Ferroelectric Polymer Nanopillar Arrays On Flexible Substrates By Reverse Nanoimprint Lithography, Jingfeng Song, Haidong Lu, Keith Foreman, Shumin Li, Li Tan, Shireen Adenwalla, Alexei Gruverman, Stephen Ducharme

Stephen Ducharme Publications

With the increasing interest in deploying ferroelectric polymer in flexible electronics and electromechanics, high-throughput and low-cost fabrication of 3D ferroelectric polymer nanostructures on flexible substrates can be a significant basis for future research and applications. Here, we report that large arrays of ferroelectric polymer nanopillars can be prepared directly on soft, flexible substrates by using low-cost polydimethylsiloxane (PDMS) soft-mold reverse nanoimprint lithography at 135 °C and at pressures as low as 3 bar. The nanopillar arrays were highly uniform over large areas of at least 200 × 200 μm and had good crystallinity with nearly optimum (110) orientation. Furthermore, the …


2d Cocrystallization From H‑Bonded Organic Ferroelectrics, Donna A. Kunkel, James Hooper, Benjamin Bradley, Lisa Schlueter, Tom Rasmussen, Paulo Costa, Sunit Beniwal, Stephen Ducharme, Eva Zurek, Axel Enders 2016 Univeristy of Nebraska-Lincoln

2d Cocrystallization From H‑Bonded Organic Ferroelectrics, Donna A. Kunkel, James Hooper, Benjamin Bradley, Lisa Schlueter, Tom Rasmussen, Paulo Costa, Sunit Beniwal, Stephen Ducharme, Eva Zurek, Axel Enders

Stephen Ducharme Publications

The synthesis of 2D H-bonded cocrystals from the room-temperature ferroelectric organics croconic acid (CA) and 3-hydroxyphenalenone (3-HPLN) is demonstrated through self-assembly on a substrate under ultrahigh vacuum. 2D cocrystal polymorphs of varied stoichiometry were identified with scanning tunneling microscopy, and one of the observed structural building blocks consists of two CA and two 3-HPLN molecules. Computational analysis with density functional theory confirmed that the experimental (CA)2(3-HPLN)2 tetramers are lower in energy than single-component structures due to the ability of the tetramers to pack efficiently in two dimensions, the promotion of favorable electrostatic interactions between tetramers, and the …


The Metal/Organic Interface In Cobalt/Vinylidene Fluoride Heterostructures, Keith Foreman, E Echeverria, Mark A. Koten, R. M. Lindsay, N. Hong, Jeffrey E. Shield, Shireen Adenwalla 2016 University of Nebraska-Lincoln

The Metal/Organic Interface In Cobalt/Vinylidene Fluoride Heterostructures, Keith Foreman, E Echeverria, Mark A. Koten, R. M. Lindsay, N. Hong, Jeffrey E. Shield, Shireen Adenwalla

Shireen Adenwalla Papers

Organic-based electronic devices are rapidly increasing in popularity, making it essential to understand and characterize the interface between organic materials and metallic electrodes. This work reports on the characterization of the interface between thin films of an emerging organic ferroelectric, vinylidene fluoride (VDF) oligomer, and Co, an important high Curie temperature ferromagnet. Using a wide battery of experimental techniques, it is shown that VDF oligomer thin films as thin as 15 nm can halt, or prevent, Co oxidization in atmospheric conditions, a necessary condition for device applications. Selectivity of magnetic properties, such as remanent magnetization, is enabled by the clarification …


Scaling Of Electroresistance Effect In Fully Integrated Ferroelectric Tunnel Junctions, Mohammad Abuwasib, Haidong Lu, Tao Li, Pratyush Buragohain, Hyungwoo Lee, Chang-Beom Eom, Alexei Gruverman, Uttam Singisetti 2016 University at Buffalo

Scaling Of Electroresistance Effect In Fully Integrated Ferroelectric Tunnel Junctions, Mohammad Abuwasib, Haidong Lu, Tao Li, Pratyush Buragohain, Hyungwoo Lee, Chang-Beom Eom, Alexei Gruverman, Uttam Singisetti

Alexei Gruverman Publications

Systematic investigation of the scalability for tunneling electroresistance (TER) of integrated Co/BaTiO3/SrRuO3 ferroelectric tunnel junctions (FTJs) has been performed from micron to deep submicron dimensions. Pulsed measurements of the transient currents confirm the ferroelectric switching behavior of the FTJs, while the hysteresis loops measured by means of piezoresponse force microscopy verify the scalability of these structures. Fully integrated functional FTJ devices with the size of 300×300 nm2 exhibiting a tunneling electroresistance (TER) effect of the order of 2.7×104% have been fabricated and tested. Measured current density of 75 A/cm2 for the ON state …


Domain Wall Conductivity In Semiconducting Hexagonal Ferroelectric Tbmno3 Thin Films, D. J. Kim, J. G. Connell, S. S. A. Seo, Alexei Gruverman 2016 University of Nebraska - Lincoln

Domain Wall Conductivity In Semiconducting Hexagonal Ferroelectric Tbmno3 Thin Films, D. J. Kim, J. G. Connell, S. S. A. Seo, Alexei Gruverman

Alexei Gruverman Publications

Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO3 and Pb(Zr,Ti)O3 films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO3 thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO3 films is …


Theoretical Investigations Of Zinc Blende And Wurtzite Semiconductor Quantum Wells On The Rotated Substrates, Igor Ivashev 2016 Wilfrid Laurier University

Theoretical Investigations Of Zinc Blende And Wurtzite Semiconductor Quantum Wells On The Rotated Substrates, Igor Ivashev

Theses and Dissertations (Comprehensive)

We present a comprehensive set of computations of effective mass theory for both the Kane's parabolic band approximation and Luttinger-Kohn's valence band mixing approximation. We generalize the kp method to be able to evaluate band structures for the materials such as zincblende InGaAsN and GaAsBi compounds used in long wavelength lasers and wurtzite materials used in short wavelength lasers. We investigate methodology to study band structure of semiconductors that are grown away from natural direction. The strain influence is introduced via Bir and Pikus model. It is expected that band structure is strongly dependent on direction of crystal growth and …


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