Nanoscience and Nanotechnology Commons^™

Pamam Dendrimer-Based Therapeutic And Diagnostic Nanodevices, Admira Bosnjakovic

Wayne State University Dissertations

Dendrimers are ideal materials to be used in the emerging field of nanomedicine. Their nanoscale size and high density of functional groups on their peripheries allow them to be used for various biomedical applications. This work exploits dendrimers as drug delivery vehicles and a versatile platform for capturing biomarkers with improved sensitivity and specificity. Hydroxyl terminated poly(amidoamine) dendrimer (PAMAM-OH) was modified with a linker having amine group at the end and conjugated to two drugs, erythromycin (EM) and allopregnanonolne, respectively and evaluated in vitro. Both drugs were provided with a linker having carboxylic group required for conjugation reaction with dendrimer. …

Crystallite Phase And Orientation Determinations Of (Mn, Ga) As/Gaas-Crystallites Using Analyzed (Precession) Electron Diffraction Patterns, Ines Häusler, Stavros Nicolopoulos, Edgar F. Rauch, K. Volz, Peter Moeck

Physics Faculty Publications and Presentations

Outline of the presentation:

1. Material system: (Mn,Ga)As/GaAs-crystallites

2. Structure analysis using Nano-beam Diffraction (NBD) Precession Electron Diffraction Technique (PED) --> Structure type I + II

3. Phase and orientation mapping using ASTAR

4. Conclusion

Influence Of Cross-Section Geometry And Wire Orientation On The Phonon Shifts In Ultra-Scaled Si Nanowires, Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck

Birck and NCN Publications

Engineering of the cross-section shape and size of ultra-scaled Si nanowires (SiNWs) provides an attractive way for tuning their structural properties. The acoustic and optical phonon shifts of the free-standing circular, hexagonal, square and triangular SiNWs are calculated using a Modified Valence Force Field (MVFF) model. The acoustic phonon blue shift (acoustic hardening) and the optical phonon red shift (optical softening) show a strong dependence on the cross-section shape and size of the SiNWs. The triangular SiNWs have the least structural symmetry as revealed by the splitting of the degenerate flexural phonon modes and The show the minimum acoustic hardening …

Effects Of Interface Roughness Scattering On Radio Frequency Performance Of Silicon Nanowire Transistors, Sunggeun Kim, Mathieu Luisier, Timothy B. Boykin, Gerhard Klimeck

Birck and NCN Publications

The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS) is statistically investigated through a three dimensional full–band quantum transport simulation based on the sp3d5s∗ tight–binding model. As the diameter of the SiNWT is scaled down below 3 nm, IRS causes a significant reduction of the cut-off frequency. The fluctuations of the conduction band edge due to the rough surface lead to a reflection of electrons through mode-mismatch. This effect reduces the velocity of electrons and hence the transconductance considerably causing a cut-off frequency reduction.

Effects Of Interface Disorder On Valley Splitting In Sige/Si/Sige Quantum Wells, Zhengping Jiang, Neerav Kharche, Timothy Boykin, Gerhard Klimeck

Birck and NCN Publications

A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We …

Shape And Orientation Effects On The Ballistic Phonon Thermal Properties Of Ultra-Scaled Si Nanowires, Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck

Birck and NCN Publications

The effect of geometrical confinement, atomic position and orientation of Silicon nanowires (SiNWs) on their thermal properties are investigated using the phonon dispersion obtained using a Modified Valence Force Field (MVFF) model. The spe- cific heat (Cv) and the ballistic thermal conductance (κbal) shows anisotropic variation l with changing cross-section shape and size of the SiNWs. The Cv increases with de- creasing cross-section size for all the wires. The triangular wires show the largest Cv due to their highest surface-to-volume ratio. The square wires with [110] orientation show the maximum κbal since they have the highest number of conducting phonon …

Simulation Of Electrospun Nanofiber Deposition On Stationary And Moving Substrates, Linhua Liu, Yuris A. Dzenis

Department of Mechanical and Materials Engineering: Faculty Publications

Electrospinning produces continuous fibers with diameters from single nanometers to microns by jetting polymer solutions in high electric fields. Electrospun non-woven filamentary materials attract rapidly growing interest for broad range of applications. Properties of these materials depend on their nano- and microstructure that is determined in turn by the electric field and nanofiber collector. Despite critical importance, deposition of electrospun fibers on substrates has not yet been extensively studied theoretically and new methods of nanofiber collection continue to be developed mostly empirically. The objective of this Letter was to develop and demonstrate numerical simulation of electrospun nanofiber deposition on moving …

Modeling Of Solvent Evaporation From Polymer Jets In Electrospinning, Xiang-Fa Wu, Yury Salkovskiy, Yuris A. Dzenis

Department of Mechanical and Materials Engineering: Faculty Publications

Solvent evaporation plays a critical role in nanofiber formation in electrospinning. Here, we present a nonlinear mass diffusion-transfer model describing the drying process in dilute polymer solution jets. The model is used to predict transient solvent concentration profiles in polyacrylonitrile/ N,N-dimethylformamide (PAN/DMF) jets with the initial radii ranging from 50µm down to 100 nm. Numerical simulations demonstrate high transient inhomogeneity of solvent concentration over the jet cross-section in microscopic jets. The degree of inhomogeneity decreases for finer, submicron jets. The simulated jet drying time decreases rapidly with the decreasing initial jet radius, from seconds for microjets to single milliseconds for …

A Cell Electrofusion Microfluidic Device Integrated With 3d Thin-Film Microelectrode Arrays, Ning Hu, Jun Yang, Shizhi Qian, Sang W. Joo, Xiaolin Zheng

Mechanical & Aerospace Engineering Faculty Publications

A microfluidic device integrated with 3D thin film microelectrode arrays wrapped around serpentine-shaped microchannel walls has been designed, fabricated and tested for cell electrofusion. Each microelectrode array has 1015 discrete microelectrodes patterned on each side wall, and the adjacent microelectrodes are separated by coplanar dielectric channel wall. The device was tested to electrofuse K562 cells under a relatively low voltage. Under an AC electric field applied between the pair of the microelectrode arrays, cells are paired at the edge of each discrete microelectrode due to the induced positive dielectrophoresis. Subsequently, electric pulse signals are sequentially applied between the microelectrode arrays …

Dissemination Strategy For The Nanosafety Cluster 27.09.2011, Extra Deliverable 4.12 .Nanoimpactnet Report, Gordon Chambers, Iseult Lynch, Darren Hart, Nathalie Boschung, Byrony Ross, Sonja Grossberndt

Reports

So that the widest possible group of European nanosafety stakeholders are able to meet, interact, benefit from the work of NSC project members and work using reproducible methods using the same terms, there must be coordination. The following requirements should be clearly defined in the formulation of all new EC sponsored nanosafety-related projects and should be strongly encouraged in existing NSC projects:

Preparation And Characterization Of Iron Oxide And Hydroxide Based Nanomaterials, Guillermo Carbajal Franco

Open Access Theses & Dissertations

Iron (Fe) oxides and hydroxides are common and abundant materials. They exhibit diverse crystal structures, properties and phenomena by virtue of which they find a wide range of scientific and technological applications. Controlled growth and manipulation of the specific structure and electronic behavior to meet the requirements of a given application is a challenging problem in view of many possible phases and composition of the resulting materials. The preparation method and experimental conditions will, therefore, significantly affect the properties and performance of Fe oxides and hydroxides. The goal of the project is to obtain Fe-based oxide/hydroxide catalytic materials and to …

Intermediate Layers In Tandem Organic Solar Cells, Yongbo Yuan, Jinsong Huang, Gang Li

Department of Mechanical and Materials Engineering: Faculty Publications

Tandem structures can boost the efficiency of organic solar cell to more than 15%, compared to the 10% limit of single layer bulk heterojunction devices. Design and fabricating of intermediate layers plays a very important role to achieve high device performance. This article will review the main experimental progresses of tandem organic solar cells, and focus on the intermediate layers (charge recombination layers) in both thermal evaporated and solution processed organic tandem solar cell devices.

A Model Of Giant Vacuole Dynamics In Human Schlemm’S Canal Endothelial Cells, Ryan M. Pedrigi, David Simon, Ashley Reed, W. Daniel Stamer, Darryl R. Overby

Department of Mechanical and Materials Engineering: Faculty Publications

Aqueous humour transport across the inner wall endothelium of Schlemm’s canal likely involves flow through giant vacuoles and pores, but the mechanics of how these structures form and how they influence the regulation of intraocular pressure (IOP) are not well understood. In this study, we developed an in vitro model of giant vacuole formation in human Schlemm’s canal endothelial cells (HSCECs) perfused in the basal-to-apical direction (i.e., the direction that flow crosses the inner wall in vivo) under controlled pressure drops (2 or 6 mmHg). The system was mounted on a confocal microscope for time-lapse en face imaging, and cells …

Investigation Of Titanium Nitride As Catalyst Support Material And Development Of Durable Electrocatalysts For Proton Exchange Membrane Fuel Cells, Bharat Avasarala

Legacy Theses & Dissertations (2009 - 2024)

The impending energy and climatic crisis makes it imperative for human society to seek non-fossil based alternative sources for our energy needs. Although many alternative energy technologies are currently being developed, fuel cell technology provides energy solutions, which satisfy a wide range of applications. But the current fuel cell technology is far from its target of large scale commercialization mainly because of its high cost and poor durability. Considerable work has been done in reducing the cost but its durability still needs significant improvement. Of the various materials in a PEM fuel cell, the degradation of electrocatalyst affects its durability …

Effects Of Radiation-Induced Carbon Contamination On The Printing Performance Of Extreme Ultraviolet Masks, Yu-Jen Fan

Legacy Theses & Dissertations (2009 - 2024)

This dissertation investigates one of the remaining issues for extreme ultraviolet (EUV) lithography, the effects of radiation induced carbon contamination on the printing performance of patterned EUV masks. The impact of carbon contamination on EUV masks is significant due to the throughput loss and potential effects on imaging performance, and occurs when multilayer surfaces are exposed to EUV radiation with residual carbonaceous species present. Current carbon contamination research is primarily focused on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on …

An Exploration Of Focused Electron Beam-Induced-Deposition At Cryogenic Temperatures, Matthew Bresin

Legacy Theses & Dissertations (2009 - 2024)

A modified version of electron beam-induced-deposition (EBID) has been studied, where cryogenic substrates were employed to alter the growth environment. Cryogenic substrates enabled multi-layer condensed phase films, which, upon electron exposure and reheating to room temperature, exhibited several unique surface morphologies not present in traditional EBID deposits. By analyzing the composition and structure of the cryogenic deposits, along with simulation of energy deposition from exposure, a diffusion based growth mechanism has been proposed. To test the validity of the proposed model, several process variables were investigated including electron flux, electron fluence, condensate thickness and precursor type. Using the knowledge garnered …

A New Method For The Removal Of Parasitic Capacitances From Sub-100nm Mosfets Using Low-Noise Split Capacitance-Voltage Measurements, Daniel R. Steinke

Legacy Theses & Dissertations (2009 - 2024)

The physical shape of MOSFETs and the processing involved in their fabrication give rise to parasitic capacitances. These capacitances are typically small compared to the intrinsic channel capacitance of the device, but as MOSFETs scale into the sub-100nm gate length range, the parasitic capacitances become a significant percentage of the overall measured capacitance, resulting in a source of error in the analysis of these devices. The purpose of this work is to describe these parasitic capacitances and their origin in MOSFET structures and to propose a method for their removal for analysis. The experimental devices used for this work are …

Effects Of Low Energy E-Beam Irradiation On Graphene And Graphene Field Effect Transistors And Raman Metrology Of Graphene On Split Gate Test Structures, Gayathri Rao

Legacy Theses & Dissertations (2009 - 2024)

Apart from its compelling performance in conventional nanoelectronic device geometries, graphene is an appropriate candidate to study certain interesting phenomenon (e.g. the Veselago lens effect) predicted on the basis of its linear electron dispersion relation. A key requirement for the observation of such phenomenon in graphene and for its use in conventional field-effect transistor (FET) devices is the need to minimize defects such as consisting of - or resulting from - adsorbates and lattice non-uniformities, and reduce deleterious substrate effects. Consequently the investigation of the origin and interaction of defects in the graphene lattice is essential to improve and tailor …

The Formation And Distribution Of Hippocampal Synapses On Patterned Neuronal Networks, Natalie Michelle Dowell-Mesfin

Legacy Theses & Dissertations (2009 - 2024)

ABSTRACT

Synthesis, Processing And Characterization Of Silicon-Based Templated Nanowires, Jae Ho Lee

Legacy Theses & Dissertations (2009 - 2024)

Semiconductor and metallic nanowires have attracted substantial attention due to their wide variety of applications, ranging from nanoelectronics to energy storage devices. In particular, self-assembled silicon nanowires (SiNWs) may be an attractive alternative to conventionally processed planar silicon since SiNWs can potentially function as both the switch (i.e. transistor) and local interconnect (e.g. metal silicide nanowire) to form an inherently integrated nanoelectronic system. Also, hierarchical (branched) nanowire systems hold potential for catalysts or porous electrode applications for energy applications

High-K Gate Stack On Compound Semiconductor Channel Materials For Low Power, High Performance Digital Logic Applications, Rama Kambhampati

Legacy Theses & Dissertations (2009 - 2024)

Group III-V compound semiconductors such as InGaAs and InGaSb are actively being considered as channel materials for low power, high performance digital logic applications due to superior carrier transport properties such as mobility and saturation velocity. The high density of interface states at high-k dielectric and III-V interface that results in pinning of Fermi level is one of the major challenges that need to be addressed before III-V CMOS becomes a mainstream technology.

Cost-Effective Imprint Template Fabrication For Step And Flash Imprint Lithography, Adam Marc Munder

Legacy Theses & Dissertations (2009 - 2024)

The College of Nanoscale Science and Engineering (CNSE) is studying imprint template fabrication with the 100kV Vistec VB300 Gaussian E-Beam writer. The major goal is to develop and advance imprint template fabrication technology using low cost quartz wafers for proof-of-concept demonstrations.

Role Of Interface Band Structure On Hot Electron Transport, John J. Garramone

Legacy Theses & Dissertations (2009 - 2024)

Knowledge of electron transport through materials and interfaces is fundamentally and technologically important. For example, metal interconnects within integrated circuits suffer increasingly from electromigration and signal delay due to an increase in resistance from grain boundary and sidewall scattering since their dimensions are becoming shorter than the electron mean free path. Additionally, all semiconductor based devices require the transport of electrons through materials and interfaces where scattering and parallel momentum conservation are important. In this thesis, the inelastic and elastic scattering of hot electrons are studied in nanometer thick copper, silver and gold films deposited on silicon substrates. Hot electrons …

Applying X-Ray Microscopy And Finite Element Modeling (Fem) To Identify The Mechanism Of Stress-Assisted Void Growth In Through Silicon Via (Tsv), Lay Wai Kong

Legacy Theses & Dissertations (2009 - 2024)

Fabricating through-silicon vias (TSVs) is challenging, especially for conformally filled TSVs, often hampered by the seam line and void inside the TSVs. Stress-assisted void growth in TSVs has been studied by finite element stress modeling and X-ray computed tomography (XCT). Because X-ray imaging does not require TSVs to be physically cross-sectioned, the same TSV can be imaged before and after annealing. Using 8 keV laboratory-based XCT, voids formed during copper electroplating are observed in as-deposited samples and void growth is observed at the void location after annealing. We hypothesize that the mechanism generating voids is hydrostatic stress-assisted void growth. Stresses …

Optimization And Development Of Silicon-Based Semiconductor Devices Using Tcad, Changwoo Lee

Legacy Theses & Dissertations (2009 - 2024)

Computer simulation of the electrical and optical properties of semiconductor devices has been became as an essential tool for developing new device as well as for improving existing device. This presentation describes applications of physical device simulation: (1) design optimization of power MOSFET, which is single crystalline based silicon semiconductor device, for cryogenic temperature application and (2) two-dimensional device simulation of amorphous silicon based solar cell to develop novel photovoltaic device with high efficiency.

Electron-Phonon Interactions And Quantum Confinement Effects On Optical Transitions In Nanoscale Silicon Films, Vimal Kumar Kamineni

Legacy Theses & Dissertations (2009 - 2024)

Theoretical studies have attributed the temperature dependence of the linear optical response (dielectric function) of bulk semiconductors to electron-phonon interactions and thermal expansion of the lattice. However, the role of phonons in the optical properties of nanoscale structures is often overlooked. This thesis systematically investigates the impact of both carrier confinement and electron-phonon interactions using nanoscale films of silicon in crystalline silicon quantum wells (c-Si QW). Spectroscopic ellipsometry (SE) is a linear optical technique used to of extract the dielectric function and thickness of very thin films. X-ray reflectivity (XRR) was used as the complementary thickness metrology method. The dielectric …

Investigation Of Novel Alumina Nanoabrasive And The Interactions With Basic Chemical Components In Copper Chemical Mechanical Planarization (Cmp) Slurries, Shravanthi Lakshmi Manikonda

Legacy Theses & Dissertations (2009 - 2024)

Chemical mechanical planarization (CMP) is an enabling process technology for IC fabrication to maintain global planarity across the wafer to satisfy lithographic depth of focus constraints. It also enables integration of materials that cannot be anisotropically etched, such as Cu. CMP utilizes nanoparticle abrasives in aqueous slurry to aid in planarization.

Graphene-Based Interconnects : Electrical Performance And Reliability, Tianhua Yu

Legacy Theses & Dissertations (2009 - 2024)

According to the ITRS Roadmap, on-chip interconnects wire width and current density will reach 22 nm and 5.8×106 A/cm2 in 2020, respectively. The electrical resistivity of Cu increases with scaled critical dimensions due to exacerbated carrier scattering at grain boundaries and interfaces, resulting in signal speed degradation. Electronmigration (EM)-related failure due to intensified current distribution posts extra limits to ultra-scaled systems. Innovative interconnect solutions are needed to tackle performance and scaling challenges.

Applications Of Raman Spectroscopy For Silicon Stress Characterization In Integrated Circuits, Colin Mcdonough

Legacy Theses & Dissertations (2009 - 2024)

The introduction of mechanical stress in Si-based integrated circuits (ICs), whether desired or undesired, is intrinsic to IC fabrication. The origins are diverse and result from the numerous materials, geometries, and processes involved in fabrication. These stresses can lead to such effects as delamination, void formation and migration, and fracture, and can significantly affect device performance. As a result, stress development is a major concern for reliability, process control, and device design. It is necessary to investigate and characterize the origins and levels of the induced stresses. A more complete fundamental understanding of the evolution of stress in ICs and …

Extreme Ultraviolet Photoresists : Film Quantum Yields And Ler Of Thin Film Resists, Craig D. Higgins

Legacy Theses & Dissertations (2009 - 2024)

Extreme ultraviolet (EUV) is the leading candidate for a commercially viable solution for next generation lithography. The development of EUV chemically amplified photoresists and processes are critical to the future lithographic requirements of the microelectronics industry. To meet the necessary requirements for both integrated circuit (IC) specifications and cost, the resolution, line-edge roughness (LER) and sensitivity all need to be reduced. Unfortunately, a fundamental trade-off has been observed between these three crucial elements. We have predicted that the best way to obtain the required resolution, line-edge roughness and sensitivity (RLS) is to create more acid molecules per photon absorbed. This …