Electronic Devices and Semiconductor Manufacturing Commons^™

Investigation Of Cds Nanowires And Planar Films For Enhanced Performance As Window Layers In Cds-Cdte Solar Cell Devices, Jianhao Chen

Theses and Dissertations--Electrical and Computer Engineering

Cadmium sulfide (CdS) and cadmium telluride (CdTe) are two leading semiconductor materials used in the fabrication of thin film solar cells of relatively high power conversion efficiency and low manufacturing cost. In this work, CdS/CdTe solar cells with a varying set of processing parameters and device designs were fabricated and characterized for comparative evaluation. Studies were undertaken to elucidate the effects of (i) each step in fabrication and (ii) parameters like thickness, sheet resistance, light absorptivity solution concentration, inert gas pressure etc. Best results were obtained when the thickness of CdS planar film for the window layer was in the …

Copper Indium Diselenide Nanowire Arrays In Alumina Membranes Deposited On Molybdenum And Other Back Contact Substrates, Bhavananda R. Nadimpally

Theses and Dissertations--Electrical and Computer Engineering

Heterojunctions of CuInSe₂ (CIS) nanowires with cadmium sulfide (CdS) were fabricated demonstrating for the first time, vertically aligned nanowires of CIS in the conventional Mo/CIS/CdS stack. These devices were studied for their material and electrical characteristics to provide a better understanding of the transport phenomena governing the operation of heterojunctions involving CIS nanowires. Removal of several key bottlenecks was crucial in achieving this. For example, it was found that to fabricate alumina membranes on molybdenum substrates, a thin interlayer of tungsten had to be inserted. A qualitative model was proposed to explain the difficulty in fabricating anodized aluminum oxide …

Multi-Mode Self-Referencing Surface Plasmon Resonance Sensors, Jing Guo

Theses and Dissertations--Electrical and Computer Engineering

Surface-plasmon-resonance (SPR) sensors are widely used in biological, chemical, medical, and environmental sensing. This dissertation describes the design and development of dual-mode, self-referencing SPR sensors supporting two surface-plasmon modes (long- and short-range) which can differentiate surface binding interactions from bulk index changes at a single sensing location. Dual-mode SPR sensors have been optimized for surface limit of detection (LOD). In a wavelength interrogated optical setup, both surface plasmons are simultaneously excited at the same location and incident angle but at different wavelengths. To improve the sensor performance, a new approach to dual-mode SPR sensing is presented that offers improved differentiation …

Estimation Of Performance Indices For The Planning Of Sustainable Transportation Systems, Alexander Paz, Pankaj Maheshwari

Electrical & Computer Engineering Faculty Research

In the context of sustainable transportation systems, previous studies have either focused only on the transportation systemor have not used a methodology that enables the treatment of incomplete, vague, and qualitative information associated with the available data. This study proposes a system of systems (SOS) and a fuzzy logic modeling approach. The SOS includes the Transportation, Activity, and Environment systems. The fuzzy logic modeling approach enables the treatment of the vagueness associated with some of the relevant data. Performance Indices (PIs) are computed for each system using a number of performance measures. The PIs illustrate the aggregated performance of each …

The Development And Packaging Of A High-Density, Three-Phase, Silicon Carbide (Sic) Motor Drive, Jared Hornberger

Graduate Theses and Dissertations

Technology advances within the power electronics field are resulting in systems characterized by higher operating efficiencies, reduced footprint, minimal form factor, and decreasing mass. In particular, these attributes and characteristics are being inserted into numerous consumer applications, such as light-emitting diode lighting, compact fluorescent lighting, smart phones, and tablet PCs, to industrial applications that include hybrid, electric, and plug-in electric vehicles and more electric aircraft. To achieve the increase in energy efficiency and significant reduction in size and mass of these systems, power semiconductor device manufacturers are developing silicon carbide (SiC) semiconductor technology.

In this dissertation, the author discusses the …

Topics On Light-Emitting-Diode Driver Research, Jaber Hasan

Graduate Theses and Dissertations

In this dissertation, light-emitting-diode (LED) drivers are investigated for efficiency issues related to driving Red-Green-Blue (RGB) pixels and multiple LED strings in parallel. A high-efficiency digitally controlled RGB LED driver was designed for driving a 3x3 RGB LED display panel. A multiplexer was used to sense the voltage drop across the current controllers. This driver maintained a minimum drive voltage across the RGB LED pixels required to keep it in regulation leading to a reduction of unwanted power losses in the RGB LED pixels by selecting the minimum drop across the current-controllers as the reference voltage of the digital controller. …

Is Tech M&A Value-Additive?, Ani Deshmukh

Undergraduate Economic Review

Given rising M&A deal volume across all high-tech subsectors, the ability to measure post-acquisition performance becomes critical. Despite this growth, the relevant academic literature is severely lacking (Kohers and Kohers 2000). Using an event-study approach, I find that acquirers and targets both realize statistically significant day-0 abnormal returns (1.23% [p<0.1] and 8.1% [p<0.01], respectively). As positive stock returns signal positive growth prospects in a semi-strong efficient market, AR regressions found that firms' technological relatedness, deal financing, purchase price premiums, and the relative book to market ratio, explained most variance. Overall, high-tech transactions are value-additive for both targets and acquirers.

Modeling Leakage Currents In Metal Insulator Metal Structures With High K Materials, Priyamvada Maleeswaran

Electrical & Computer Engineering Theses & Dissertations

Various products such as personal computers, cellular phones and mobile devices require high speed and low power consumption. Such improvements have been attained by minimizing physical dimensions of electronic devices, leading to high density integration of transistors and capacitors on integrated chips (]Cs). However, as a consequence of down-scaling device dimensions, tunneling of electrons through thin gate oxides (SiO₂) increases, leading to increased static power leakage. This constitutes wastage in power, and for the case of memory applications necessitates faster refresh cycles. In order to overcome such issues, high-k materials (such as HfO₂ and ZrO₂) …

Modeling Of Power Semiconductor Devices, Tanya Kirilova Gachovska

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

One of the requirements for choosing a proper power electronic device for a converter is that it must possess a low specific on-resistance. The specific on-resistance of a bipolar device is related to the base width and doping concentration of the lightly doped drift region. This means that the doping concentration and the width of the low-doped base region in a bipolar device must be carefully considered to achieve a desired avalanche breakdown voltage and on-resistance. In order to determine the technological parameters of a semiconductor device, a one dimensional analysis is used to calculate the minimum depletion layer width, …

Fabrication And Characterization Of Thermomechanically Processed Sulfur And Boron Doped Amorphous Carbon Films, Lonnie Carlson

Department of Chemical and Biomolecular Engineering: Dissertations, Theses, and Student Research

Small scale, high power density, reliable, and long-life power supplies would be useful or even critical for space missions or the growing number of microdetectors, microsensors, and miniature vehicles. Alpha or beta particle voltaic devices could satisfy these requirements but have been shown to degrade quickly due to radiation damage. Amorphous carbon (a-C) PN junctions or PIN devices could provide radiation hardness and sufficiently high efficiency. As the range of alpha and beta particles in a-C is ~20-120μm, much thicker films than are typical are needed to maximize collection of the particle energy.

In this work, the fabrication of thermomechanically …

A Silicon Carbide Linear Voltage Regulator For High Temperature Applications, Javier Antonio Valle Mayorga

Graduate Theses and Dissertations

Current market demands have pushed the capabilities of silicon to the edge. High temperature and high power applications require a semiconductor device to operate reliably in very harsh environments. This situation has awakened interests in other types of semiconductors, usually with a higher bandgap than silicon's, as the next venue for the fabrication of integrated circuits (IC) and power devices. Silicon Carbide (SiC) has so far proven to be one of the best options in the power devices field.

This dissertation presents the first attempt to fabricate a SiC linear voltage regulator. This circuit would provide a power management option …

Delay Insensitive Ternary Logic Utilizing Cmos And Cntfet, Ravi Sankar Parameswaran Nair

Graduate Theses and Dissertations

As digital circuit design continues to evolve due to progress of semiconductor processes well into the sub 100nm range, clocked architectures face limitations in a number of cases where clockless asynchronous architectures require substantially less power, generate less noise, and produce less electromagnetic interference (EMI). This dissertation develops the Delay Insensitive Ternary Logic (DITL) asynchronous design paradigm that combines the designs aspects of similar Dual-Rail asynchronous paradigms and Boolean logic to create a single wire per bit, three voltage signaling and logic scheme.

DITL is designed at the transistor level using multi-threshold CMOS and carbon nanotube (CNT) FETs to develop …

Investigations Of Conduction Mechanisms Of Ion-Conducting, Bridging Memory Devices (Cbram/Pmc/Ecm), Kyle Bradley Campbell

Boise State University Theses and Dissertations

Electron storage memory devices are approaching the minimum dimensions that are physically possible due to the onward march of Moore’s law. To continue to enable the increased memory densities needed for today’s applications, especially low power and size constrained mobile devices, new memory solutions are needed. Several candidates are emerging in this space. Metal ion-conducting memory devices are being investigated due to excellent scalability, speed, and low power. These devices are part of a memory class called resistive memory. In the literature, they are referred to as CBRAM (conductive bridge random access memory), PMC (programmable metallization cell), ECM (electrochemical metallization …

Cmos Characterization, Modeling, And Circuit Design In The Presence Of Random Local Variation, Benjamin A. Millemon Sr.

Boise State University Theses and Dissertations

Random local variation in CMOS transistors complicates characterization procedures, modeling efforts, simulation tools, and circuit design methodologies in highly scaled CMOS devices. Mismatch is not only a concern for closely matched device pairs in analog circuits; digital circuit designers also have to consider the effects of random variation. Device characterization, modeling, process development, and circuit design engineers have to work together to mitigate the impact of random local variation. This thesis outlines the primary challenges of CMOS characterization, modeling, and circuit design in the presence of random local variation and offers guidelines and solutions to help mitigate and model the …

Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry

Faculty Publications

No abstract provided.

Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju

Birck and NCN Publications

Metal–semiconductor (M–S) junctions are important components in many semiconductor devices, and there is growing interest in realizing high quality M–S contacts that are optically transparent. In this paper, we present our investigations into the characteristics of M–S junction in a semiconducting ZnO nanowire that was directly grown on a multilayer graphene film (MGF). The synthesized nanowires were fabricated into two-terminal devices with MGF as one contact and Al as the other contact. By comparison with devices employing Al contacts at both ends, the nanowire resistivity and specific contact resistivity of the MGF–nanowire contact can be extracted. The extracted specific contact …

Poly(3,4-Ethylenedioxy-Thiophene)：Poly（Styrenesulfonate）（Pedot:Pss） As A Hole-Transporting/Electron-Blocking Interfacial Layer To Increase The Efficiency Of Polymer Bulk-Heterojunction Solar Cells, Yanyu Wu, Michael D. Irwin

COURI Symposium Abstracts, Summer 2012

Solar energy is playing a critical role in today’s renewable energy resources. Polymer bulk-heterojunction solar cells have the possibility to be cost-effective and highly efficient. However, the technology is fairly new and has not yet been perfected. Therefore, In order to enhance the efficiency of polymer bulk-heterojunction solar cells, thin layers of Poly(3,4-ethylenedioxy-thiophene)：poly（styrenesulfonate）（PEDOT:PSS） are inserted between the active organic layer, poly(3-hexylthiophene)(P3HT)+[6,6]-phenyl-C61 butyric acid methyl ester(PCBM), and the ITO(tin-doped indium oxide) anode of bulk-heterojunction ITO/P3HT:PCBM/LiF /Al solar cells. Both the interfacial layer, which is PEDOT: PSS, and the active layer are deposited by spin-coating. So far, I have been able to …

The Role Of Rare Earth Dopants In Semiconducting Host System For Spin Electronic Devices, Juan A. Colon Santana

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

The doping of a wide band gap insulator offers an opportunity to increase the coupling between free carriers and magnetic impurities under the magnetic polaron model, leading to an enhanced in the Curie temperature of the host compound, critical for the fabrication of devices with magnetic properties. Some rare earth elements have large intrinsic magnetic moments due to unfilled 4d orbitals, and have been readily incorporated in materials for optical applications. Here the rare earths gadolinium and cerium were explored either as dopants or as part of the high-K semiconducting compound for the fabrication of magnetic heterojunction devices with magnetic …

Fabrication And Characterization Of Torsional Micro-Hinge Structures, Mike Madrid Marrujo

Master's Theses

ABSTRACT

Fabrication and Characterization of Torsional Micro-Hinge Structures

Mike Marrujo

There are many electronic devices that operate on the micrometer-scale such as Digital Micro-Mirror Devices (DMD). Micro actuators are a common type of DMD that employ a diaphragm supported by torsional hinges, which deform during actuation and are critical for the devices to have high stability and reliability. The stress developed within the hinge during actuation controls how the actuator will respond to the actuating force. Electrostatically driven micro actuators observe to have a fully recoverable non-linear viscoelastic response. The device consists of a micro-hinge which is suspended by two …

Cell Phone Charger For The Dc House Project, Andrew Hefner, Antonio Magdaleno

Electrical Engineering

The goal of this project is to create a multiple output cell phone charger for the DC House project. The cell phone charger is essentially a DC-DC converter. The converter takes an input of 48 volts from the outlet in the DC House and decreases the voltage level to 5 volts; the input voltage level of all cellular devices. By designing an isolated flyback converter with initial specification in LTSpice simulation software, a converter was created. By monitoring the input and output voltage and current using the multi-meters and electronic load, we determined the charger to be 71% efficient when …