Electronic Devices and Semiconductor Manufacturing Commons^™

Orientation-Dependent Pseudomorphic Growth Of Inas For Use In Lattice-Mismatched Mid-Infrared Photonic Structures, Gregory Edward Triplett, Charles Meyer, Emily Cheng

Electrical and Computer Engineering Publications

In this study, InAs was deposited on GaAs (100) and GaAs (111)B 2 degrees towardssubstrates for the purpose of differentiating the InAs growth mode stemming from strain and then analyzed using in-situ reflection high energy electron diffraction, scanning electron microscopy, Raman spectroscopy, reflectance spectroscopy, and atomic force microscopy. The procession of InAs deposition throughout a range of deposition conditions results in assorted forms of strain relief revealing that, despite lattice mismatch for InAs on GaAs (approximately 7%), InAs does not necessarily result in typical quantum dot/wire formation on (111) surfaces, but instead proceeds two-dimensionally due primarily to the surface orientation.

Enhancing The Insulation Of Wide-Range Spectrum In The Pva/N Thin Film By Doping Zno Nanowires, Yu-Chen Lin, Ching-Hsiang Vhen, Liang-Yih Chen, Shih-Chieh Hsu, Shizhi Qian

Mechanical & Aerospace Engineering Faculty Publications

In this study, polyvinyl alcohol/nitrogen (PVA/N) hybrid thin films doped with sharp-sword ZnO nanowires with insulating effect and wide-range spectrum are demonstrated for the first time. PVA/N doped ZnO nanocomposites were developed by blending PVA and N-doped ZnO nanowires in water at room temperature. Measurements from the field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Raman, and photoluminescence emission (PL) spectra of the products show that nitrogen is successfully doped into the ZnO wurtzite crystal lattice. In addition, the refractive index of PVA/N doped ZnO hybrid thin films can be controlled by varying the doped ZnO nanowires under different …

Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Ge quantum dot formation on Si(1 0 0)-(2 × 1) by nanosecond pulsed laser deposition under laser excitation was investigated. Scanning tunneling microscopy was used to probe the growth mode and morphology. Excitation was performed during deposition using laser energy density of 25-100 mJ/cm ². Faceted islands were achieved at a substrate temperature of ∼250 °C only when using laser excitation. The island morphology changes with increased laser excitation energy density although the faceting of the individual islands remains the same. The size of the major length of islands increases with the excitation laser energy density. A purely electronic …

Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li

Electrical & Computer Engineering Faculty Publications

Metal-Oxide-Semiconductor (MOS) capacitors with Bi₂Te₃ thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi₂Te₃ thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi₂Te₃, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent …

Measurement And Modeling Of Humidity Sensors, Jingbo Tong

Theses and Dissertations--Electrical and Computer Engineering

Humidity measurement has been increasingly important in many industries and process control applications. This thesis research focus mainly on humidity sensor calibration and characterization. The humidity sensor instrumentation is briefly described. The testing infrastructure was designed for sensor data acquisition, in order to compensate the humidity sensor’s temperature coefficient, temperature chambers using Peltier elements are used to achieve easy-controllable stable temperatures. The sensor characterization falls into a multivariate interpolation problem. Neuron networks is tried for non-linear data fitting, but in the circumstance of limited training data, an innovative algorithm was developed to utilize shape preserving polynomials in multiple planes in …

A Multi-Physics Computational Approach To Simulating Thz Photoconductive Antennas With Comparison To Measured Data And Fabrication Of Samples, Darren Ray Boyd

Theses and Dissertations--Electrical and Computer Engineering

The frequency demands of radiating systems are moving into the terahertz band with potential applications that include sensing, imaging, and extremely broadband communication. One commonly used method for generating and detecting terahertz waves is to excite a voltage-biased photoconductive antenna with an extremely short laser pulse. The pulsed laser generates charge carriers in a photoconductive substrate which are swept onto the metallic antenna traces to produce an electric current that radiates or detects a terahertz band signal. Therefore, analysis of a photoconductive antenna requires simultaneous solutions of both semiconductor physics equations (including drift-diffusion and continuity relations) and Maxwell’s equations. A …

Switched-Capacitor Voltage Doubler Design Using 0.5 Μm Technology, Hanfeng Wang

Theses

While integrated circuit (IC) power management has been an eternal topic for chip designers, inductor based DC-DC converters have been dominant in the field for years. However, because of the natures of inductors: large electro-magnetic interference, high coupling noise, and difficult silicon fabrication process, they are not favorable to on-chip solutions. Switched-capacitor (SC) DC-DC converters, which adopt capacitors for their energy storage components, have become increasingly popular among both the academia and the industry, because, apparently, they avoid the drawbacks of the inductor counterparts, and can be directly implemented on-chip without additional fabrication process.

In this paper, we will investigate …

Electron – Phonon Interaction In Multiple Channel Gan Based Hfets: Heat Management Optimization, Romualdo A. Ferreyra

Theses and Dissertations

New power applications for managing increasingly higher power levels require that more heat be removed from the power transistor channel. Conventional treatments for heat dissipation do not take into account the conversion of excess electron energy into longitudinal optical (LO) phonons, whose associated heat is stored in the channel unless such LO phonons decay into longitudinal acoustic (LA) phonons via a Ridley path. A two dimensional electron gas (2DEG) density of ~5×10¹²cm^-2 in the channel results in a strong plasmon–LO phonon coupling (resonance) and a minimum LO phonon lifetime is experimentally observed, implying fast heat removal from …

Quantum Efficiency Enhancement For Gan Based Light-Emitting Diodes And Vertical Cavity Surface-Emitting Lasers, Fan Zhang

Theses and Dissertations

This thesis explores the improvement of quantum efficiencies for InGaN/GaN heterostructures and their applications in light-emitting diodes (LEDs) and vertical cavity surface-emitting lasers (VCSELs). Different growth approaches and structural designs were investigated to identify and address the major factors limiting the efficiency. (1) Hot electron overflow and asymmetrical electron/hole injection were found to be the dominant reasons for efficiency degradation in nitride LEDs at high injection; (2) delta p-doped InGaN quantum barriers were employed to improve hole concentration inside the active region and therefore improve hole injection without sacrificing the layer quality; (3) InGaN active regions based on InGaN multiple …

Optical Characterization Of Ingan Heterostructures For Blue Light Emitters And Vertical Cavity Lasers: Efficiency And Recombination Dynamics, Serdal Okur

Theses and Dissertations

OPTICAL CHARACTERIZATION OF INGAN HETEROSTRUCTURES FOR BLUE LIGHT EMITTERS AND VERTICAL CAVITY LASERS: EFFICIENCY AND RECOMBINATION DYNAMICS

By Serdal Okur, Ph.D.

A thesis submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy at Virginia Commonwealth University.

Virginia Commonwealth University, 2014.

Major Director: Ümit Özgür, Associate Professor, Electrical and Computer Engineering

This thesis explores radiative efficiencies and recombination dynamics in InGaN-based heterostructures and their applications as active regions in blue light emitters and particularly vertical cavities. The investigations focus on understanding the mechanism of efficiency loss at high injection as well as developing designs to mitigate …

Using Software-Based Decision Procedures To Control Instruction-Level Execution, William B. Kimball

AFIT Patents

An apparatus, method and program product are provided for securing a computer system. A digital signature of an application is checked, which is loaded into a memory of the computer system configured to contain memory pages. In response to finding a valid digital signature, memory pages containing instructions of the application are set as executable and memory pages other than those containing instructions of the application are set as non-executable. Instructions in executable memory pages are executed. Instructions in non-executable memory pages are prevented from being executed. A page fault is generated in response to an attempt to execute an …

Physical Design Of A Smart Camera With Integrated Digital Pixel Sensors Using A 0.13Μm 8-Layer Metal Cmos Process, Mahir K. Gharzai

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

The design of cameras has historically kept imagery and computational circuitry isolated in an attempt to maximize image quality by improving pixel pitch and routing density. Although this technique has worked in creating high density arrays of pixels for large resolution imagers, it has never been able to achieve high framerate computational operations.

A radical approach is introduced to solve this dilemma by creating compact, low- power pixel elements with built-in analog-to-digital converters that directly interface with digital logic. These pixels are capable of integrating alongside logic cells and to create an array of pixels inside the processor that can …

Investigation Of The Effects Of Rapid Thermal Annealing On Mbe Grown Gaasbi/Gaas Heterostructures For Optoelectronic Devices, Perry C. Grant

Graduate Theses and Dissertations

High efficiency optoelectronic devices rely on high quality materials making up the device structure. The scope of this thesis investigates the effectiveness of rapid thermal annealing (RTA) at improving the material quality of GaAsBi/GaAs heterostructures. During the fabrication of a device, the contacts of the device had the rapid thermal annealing process accomplished to produce ohmic contacts and this research explored if this annealing treatment degraded the quantum wells that made up the active region of a device. To investigate these effects, a system to measure the photoluminescence of the material system was constructed utilizing Fourier Transform Infrared Spectroscopy. The …

Design, Fabrication And Characterization Of Plasmonic Fishnet Structures For The Enhancement Of Absorption In Thin Film Solar Cells, Sayan Seal

Graduate Theses and Dissertations

Incorporating plasmonic structures into the back spacer layer of thin film solar cells (TFSCs) is an efficient way to improve their performance. The fishnet structure; which is a tunable, plasmonic light scatterer is used to enhance light absorption. Unlike other plasmonic particles that have been previously suggested, the fishnet is an electrically connected wire mesh and does not result in electric field localization, hence it results in greater absorption in the intrinsic Si layer. Unlike other designs, the fishnet structure is placed in the back spacer layer of the TFSC, so it does not block any incident light. There is …

Max Operation In Statistical Static Timing Analysis On The Non-Gaussian Variation Sources For Vlsi Circuits, Abu M. Baker

UNLV Theses, Dissertations, Professional Papers, and Capstones

As CMOS technology continues to scale down, process variation introduces significant uncertainty in power and performance to VLSI circuits and significantly affects their reliability. If this uncertainty is not properly handled, it may become the bottleneck of CMOS technology improvement. As a result, deterministic analysis is no longer conservative and may result in either overestimation or underestimation of the circuit delay. As we know that Static-Timing Analysis (STA) is a deterministic way of computing the delay imposed by the circuits design and layout. It is based on a predetermined set of possible events of process variations, also called corners of …

Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan

Graduate Theses and Dissertations

This research work, for the first time, investigated metal semiconductor-metal (MSM) zine oxide (ZnO) nanorod based ultra-violet (UV) detectors having a Wheatstone bridge design with a high

responsivity at room temperature and above, as well as a responsivity that was largely independent of the change in ambient conditions. The ZnO nanorods which acted as the sensing element of the detector were grown by a chemical growth technique. Studies were conducted to determine the effects on ZnO nanorod properties by varying the concentration of the chemicals used for the rod growth. These studies showed how the rod diameter and the deposition …

Role Of Atomic Variability In Dielectric Charging: A First-Principles-Based Multiscale Modeling Study, Ravi Pramod Kumar Vedula, Sambit Palit, Muhammad A. Alam, Alejandro Strachan

Birck and NCN Publications

We present a dielectric charging model that combinesab initiocalculations of trap levels with a continuum-level transport model and apply it to interpret charging currents in amorphous silicon nitride. Density functional theory calculations on an ensemble of structures predict a distribution of electron trap levels up to 1.8 eV below the conduction band edge and provide insight into the physical trapping mechanisms. Incorporating this information in the continuum model, as opposed to the standard approach of a single adjustable trap level, not only leads to a more accurate description of experimental current transients in metal-insulator-metal capacitors, but also to a more …

Mems Fabrication Process Base On Su-8 Masking Layers, Scott A. Ostrow, Ronald A. Coutu Jr.

AFIT Patents

A novel fabrication process uses a combination of negative and positive photoresists with positive tone photomasks, resulting in masking layers suitable for bulk micromachining high-aspect ratio microelectromechanical systems (MEMS) devices. This technique allows the use of positive photomasks with negative resists, opening the door to an ability to create complementary mechanical structures without the fabrication delays and costs associated with having to obtain a negative photomask. In addition, whereas an SU-8 mask would normally be left in place after processing, a technique utilizing a positive photoresist as a release layer has been developed so that the SU-8 masking material can …

Mems Lab Simulation Tool, Oluwatosin D. Adeosun, Sambit Palit, Ankit Jain, Muhammad A. Alam

The Summer Undergraduate Research Fellowship (SURF) Symposium

MEMS actuators have multiple design applications. Understanding their behavior as well as the ability to predict their actuation characteristics and voltage response is important when designing these actuators. In order to know these devices will behave, designers have to solve multiple analytical equations and experiments that can be very time consuming. Over the course of the summer a tool was created on nanoHUB that will allow users to enter information about a MEMS actuator and provide the voltage response of the actuator. To create the tool, scaling equations were first provided for various geometry configurations and the equations were next …

Assessing The Mvs Model For Nanotransistors, Siyang Liu, Xingshu Sun, Mark S. Lundstrom

The Summer Undergraduate Research Fellowship (SURF) Symposium

A simple semi-empirical compact MOSFET model has been developed, which is called MIT virtual source (MVS) model. Compare to other model used in industry, MVS model requires only a few parameters, most of which can be directly obtained from experiment, and produce accurate results. One aim of this paper is to test the applicability of the MVS model to transistor made from MoS₂ rather than silicon. Another target is to determine the sustainability of the MVS model under different transistor tests. To achieve these goals, the MVS model will be used to fit the experimental data on MoS_{2 …}