Electronic Devices and Semiconductor Manufacturing Commons^™

Dc, Rf, And Thermal Characterization Of High Electric Field Induced Degradation Mechanisms In Gan-On-Si High Electron Mobility Transistors, Matthew Anthony Bloom

Master's Theses

Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are becoming increasingly popular in power amplifier systems as an alternative to bulkier vacuum tube technologies. GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low dielectric constant, and a high critical breakdown field. The aforementioned qualities make GaN a prime candidate for high-power and radiation-hardened applications using a smaller form-factor. Several different types of semiconductor substrates have been considered for their thermal properties and cost-effectiveness, and Silicon (Si) has been of increasing interest due to a balance between both factors.

In this thesis, the DC, …

A 40 Ghz Power Amplifier Using A Low Cost High Volume 0.15 Um Optical Lithography Phemt Process, Kenneth W. Mays

Dissertations and Theses

The demand for higher frequency applications is largely driven by bandwidth. The evolution of circuits in the microwave and millimeter frequency ranges always demands higher performance and lower cost as the technology and specification requirements evolve. Thus the development of new processes addressing higher frequencies and bandwidth requirements is essential to the growth of any semiconductor company participating in these markets. There exist processes which can perform in the higher frequency design space from a technical perspective. However, a cost effective solution must complement the technical merits for deployment. Thus a new 0.15 um optical lithography pHEMT process was developed …

Extending Device Performance In Photonic Devices Using Piezoelectric Properties, Gregory Edward Triplett

Electrical and Computer Engineering Publications

This study focuses on the influence of epi-layer strain and piezoelectric effects in asymmetric GaInAs/GaAlAs action regions that potentially lead to intra-cavity frequency mixing. The theoretical limits for conduction and valence band offsets in lattice-matched semiconductor structures have resulted in the deployment of non-traditional approaches such as strain compensation to extend wavelength in intersubband devices, where strain limits are related to misfit dislocation generation. Strain and piezoelectric effects have been studied and verified using select photonic device designs. Metrics under this effort also included dipole strength, oscillator strength, and offset of energy transitions, which are strongly correlated with induced piezoelectric …

Pseudomorphic Growth Of Inas On Misoriented Gaas For Extending Quantum Cascade Laser Wavelength, Gregory Edward Triplett, Charles Meyer, Emily Cheng, Justin Grayer, David Mueller, Denzil Roberts, Samuel Graham

Electrical and Computer Engineering Publications

The authors have studied the impact of epilayer strain on the deposition of InAs/GaAs on (100) and (111)B with 2 degrees offset toward 2-1-1 surfaces. Consequences of a 7% lattice mismatch between these orientations in the form of three-dimensional growth are less apparent for (111)B with 2 degrees offset toward 2-1-1 surfaces compared to (100). By exploring a range of molecular beam epitaxy process parameters for InAs/GaAs growth and utilizing scanning electron microscopy, atomic force microscopy, and Raman spectroscopy to evaluate the quality of these strained layers, the authors develop empirical models that describe the influence of the process conditions …

Materials Selection And Processing Techniques For Small Spacecraft Solar Cell Arrays, Naseem M. Torabi

Theses and Dissertations--Electrical and Computer Engineering

Body mounted germanium substrate solar cell arrays form the faces of many small satellite designs to provide the primary power source on orbit. High efficiency solar cells are made affordable for university satellite programs as triangular devices trimmed from wafer scale solar cells. The smaller cells allow array designs to pack tightly around antenna mounts and payload instruments, giving the board design flexibility. One objective of this work is to investigate the reliability of solar cells attached to FR-4 printed circuit boards. FR-4 circuit boards have significantly higher thermal expansion coefficients and lower thermal conductivities than germanium. This thermal expansion …

Study Of N Incorporation In Insb On Gaas By Molecular Beam Epitaxy For Long Wavelength Infrared Devices, Nimai Chand Patra

Dissertations

The distinguishing features of dilute nitride III-V semiconductors lie in the large simultaneous reduction in the band gap and lattice parameter when N is incorporated in small amounts in an otherwise wide band gap III-V material. In particular, N incorporation in InSb is attracting great attention due to its potential applications in the long wavelength infrared (LWIR) applications. However, the relatively small atomic size of N with respect to Sb makes the growth of good quality InSbN layers challenging with effective N incorporation. In this dissertation we present a correlation of the molecular beam epitaxial growth parameters on the type …

Investigation Of Cds Nanowires And Planar Films For Enhanced Performance As Window Layers In Cds-Cdte Solar Cell Devices, Jianhao Chen

Theses and Dissertations--Electrical and Computer Engineering

Cadmium sulfide (CdS) and cadmium telluride (CdTe) are two leading semiconductor materials used in the fabrication of thin film solar cells of relatively high power conversion efficiency and low manufacturing cost. In this work, CdS/CdTe solar cells with a varying set of processing parameters and device designs were fabricated and characterized for comparative evaluation. Studies were undertaken to elucidate the effects of (i) each step in fabrication and (ii) parameters like thickness, sheet resistance, light absorptivity solution concentration, inert gas pressure etc. Best results were obtained when the thickness of CdS planar film for the window layer was in the …

Copper Indium Diselenide Nanowire Arrays In Alumina Membranes Deposited On Molybdenum And Other Back Contact Substrates, Bhavananda R. Nadimpally

Theses and Dissertations--Electrical and Computer Engineering

Heterojunctions of CuInSe₂ (CIS) nanowires with cadmium sulfide (CdS) were fabricated demonstrating for the first time, vertically aligned nanowires of CIS in the conventional Mo/CIS/CdS stack. These devices were studied for their material and electrical characteristics to provide a better understanding of the transport phenomena governing the operation of heterojunctions involving CIS nanowires. Removal of several key bottlenecks was crucial in achieving this. For example, it was found that to fabricate alumina membranes on molybdenum substrates, a thin interlayer of tungsten had to be inserted. A qualitative model was proposed to explain the difficulty in fabricating anodized aluminum oxide …

Multi-Mode Self-Referencing Surface Plasmon Resonance Sensors, Jing Guo

Theses and Dissertations--Electrical and Computer Engineering

Surface-plasmon-resonance (SPR) sensors are widely used in biological, chemical, medical, and environmental sensing. This dissertation describes the design and development of dual-mode, self-referencing SPR sensors supporting two surface-plasmon modes (long- and short-range) which can differentiate surface binding interactions from bulk index changes at a single sensing location. Dual-mode SPR sensors have been optimized for surface limit of detection (LOD). In a wavelength interrogated optical setup, both surface plasmons are simultaneously excited at the same location and incident angle but at different wavelengths. To improve the sensor performance, a new approach to dual-mode SPR sensing is presented that offers improved differentiation …

Wireless Sensor Networks And The Internet Of Things, Yingtao Jiang, Lei Zhang, Ling Wang

Electrical & Computer Engineering Faculty Research

It is estimated that mobile internet devices that can act as sensors will outnumber humans this year (2013), and by 2015, there will be about 15 billion internet-connected devices. Related applications are thriving in commercial, civic, and scientific operations that involve sensors, web, and services, leading by both academic societies and industry companies. It is commonly accepted that the next generation of internet is becoming the “Internet of Things (IoT)” which is a worldwide network of interconnected objects and their virtual representations uniquely addressable based on standard communication protocols. Identified by a unique address, any object including computers, mobile phones, …

Estimation Of Performance Indices For The Planning Of Sustainable Transportation Systems, Alexander Paz, Pankaj Maheshwari

Electrical & Computer Engineering Faculty Research

In the context of sustainable transportation systems, previous studies have either focused only on the transportation systemor have not used a methodology that enables the treatment of incomplete, vague, and qualitative information associated with the available data. This study proposes a system of systems (SOS) and a fuzzy logic modeling approach. The SOS includes the Transportation, Activity, and Environment systems. The fuzzy logic modeling approach enables the treatment of the vagueness associated with some of the relevant data. Performance Indices (PIs) are computed for each system using a number of performance measures. The PIs illustrate the aggregated performance of each …

Topics On Light-Emitting-Diode Driver Research, Jaber Hasan

Graduate Theses and Dissertations

In this dissertation, light-emitting-diode (LED) drivers are investigated for efficiency issues related to driving Red-Green-Blue (RGB) pixels and multiple LED strings in parallel. A high-efficiency digitally controlled RGB LED driver was designed for driving a 3x3 RGB LED display panel. A multiplexer was used to sense the voltage drop across the current controllers. This driver maintained a minimum drive voltage across the RGB LED pixels required to keep it in regulation leading to a reduction of unwanted power losses in the RGB LED pixels by selecting the minimum drop across the current-controllers as the reference voltage of the digital controller. …

The Development And Packaging Of A High-Density, Three-Phase, Silicon Carbide (Sic) Motor Drive, Jared Hornberger

Graduate Theses and Dissertations

Technology advances within the power electronics field are resulting in systems characterized by higher operating efficiencies, reduced footprint, minimal form factor, and decreasing mass. In particular, these attributes and characteristics are being inserted into numerous consumer applications, such as light-emitting diode lighting, compact fluorescent lighting, smart phones, and tablet PCs, to industrial applications that include hybrid, electric, and plug-in electric vehicles and more electric aircraft. To achieve the increase in energy efficiency and significant reduction in size and mass of these systems, power semiconductor device manufacturers are developing silicon carbide (SiC) semiconductor technology.

In this dissertation, the author discusses the …

Is Tech M&A Value-Additive?, Ani Deshmukh

Undergraduate Economic Review

Given rising M&A deal volume across all high-tech subsectors, the ability to measure post-acquisition performance becomes critical. Despite this growth, the relevant academic literature is severely lacking (Kohers and Kohers 2000). Using an event-study approach, I find that acquirers and targets both realize statistically significant day-0 abnormal returns (1.23% [p<0.1] and 8.1% [p<0.01], respectively). As positive stock returns signal positive growth prospects in a semi-strong efficient market, AR regressions found that firms' technological relatedness, deal financing, purchase price premiums, and the relative book to market ratio, explained most variance. Overall, high-tech transactions are value-additive for both targets and acquirers.

Modeling Leakage Currents In Metal Insulator Metal Structures With High K Materials, Priyamvada Maleeswaran

Electrical & Computer Engineering Theses & Dissertations

Various products such as personal computers, cellular phones and mobile devices require high speed and low power consumption. Such improvements have been attained by minimizing physical dimensions of electronic devices, leading to high density integration of transistors and capacitors on integrated chips (]Cs). However, as a consequence of down-scaling device dimensions, tunneling of electrons through thin gate oxides (SiO₂) increases, leading to increased static power leakage. This constitutes wastage in power, and for the case of memory applications necessitates faster refresh cycles. In order to overcome such issues, high-k materials (such as HfO₂ and ZrO₂) …

Modeling Of Power Semiconductor Devices, Tanya Kirilova Gachovska

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

One of the requirements for choosing a proper power electronic device for a converter is that it must possess a low specific on-resistance. The specific on-resistance of a bipolar device is related to the base width and doping concentration of the lightly doped drift region. This means that the doping concentration and the width of the low-doped base region in a bipolar device must be carefully considered to achieve a desired avalanche breakdown voltage and on-resistance. In order to determine the technological parameters of a semiconductor device, a one dimensional analysis is used to calculate the minimum depletion layer width, …

Fabrication And Characterization Of Thermomechanically Processed Sulfur And Boron Doped Amorphous Carbon Films, Lonnie Carlson

Department of Chemical and Biomolecular Engineering: Dissertations, Theses, and Student Research

Small scale, high power density, reliable, and long-life power supplies would be useful or even critical for space missions or the growing number of microdetectors, microsensors, and miniature vehicles. Alpha or beta particle voltaic devices could satisfy these requirements but have been shown to degrade quickly due to radiation damage. Amorphous carbon (a-C) PN junctions or PIN devices could provide radiation hardness and sufficiently high efficiency. As the range of alpha and beta particles in a-C is ~20-120μm, much thicker films than are typical are needed to maximize collection of the particle energy.

In this work, the fabrication of thermomechanically …

Delay Insensitive Ternary Logic Utilizing Cmos And Cntfet, Ravi Sankar Parameswaran Nair

Graduate Theses and Dissertations

As digital circuit design continues to evolve due to progress of semiconductor processes well into the sub 100nm range, clocked architectures face limitations in a number of cases where clockless asynchronous architectures require substantially less power, generate less noise, and produce less electromagnetic interference (EMI). This dissertation develops the Delay Insensitive Ternary Logic (DITL) asynchronous design paradigm that combines the designs aspects of similar Dual-Rail asynchronous paradigms and Boolean logic to create a single wire per bit, three voltage signaling and logic scheme.

DITL is designed at the transistor level using multi-threshold CMOS and carbon nanotube (CNT) FETs to develop …

A Silicon Carbide Linear Voltage Regulator For High Temperature Applications, Javier Antonio Valle Mayorga

Graduate Theses and Dissertations

Current market demands have pushed the capabilities of silicon to the edge. High temperature and high power applications require a semiconductor device to operate reliably in very harsh environments. This situation has awakened interests in other types of semiconductors, usually with a higher bandgap than silicon's, as the next venue for the fabrication of integrated circuits (IC) and power devices. Silicon Carbide (SiC) has so far proven to be one of the best options in the power devices field.

This dissertation presents the first attempt to fabricate a SiC linear voltage regulator. This circuit would provide a power management option …

Cmos Characterization, Modeling, And Circuit Design In The Presence Of Random Local Variation, Benjamin A. Millemon Sr.

Boise State University Theses and Dissertations

Random local variation in CMOS transistors complicates characterization procedures, modeling efforts, simulation tools, and circuit design methodologies in highly scaled CMOS devices. Mismatch is not only a concern for closely matched device pairs in analog circuits; digital circuit designers also have to consider the effects of random variation. Device characterization, modeling, process development, and circuit design engineers have to work together to mitigate the impact of random local variation. This thesis outlines the primary challenges of CMOS characterization, modeling, and circuit design in the presence of random local variation and offers guidelines and solutions to help mitigate and model the …