Electronic Devices and Semiconductor Manufacturing Commons^™

Development And Demonstration Of A Field-Deployable Fast Chromotomographic Imager, Daniel C. O'Dell

Theses and Dissertations

A field deployable hyperspectral imager utilizing chromotomography (CT), with a direct vision prism (DVP) as the dispersive element, has been constructed at AFIT. This research is focused on the development and demonstration of the CT imager. An overview of hyperspectral imaging, chromotomography, a synopsis of reconstruction algorithms, and other CT instruments are given. The importance of component alignment, instrument calibration, and exact prism angular position data are discussed. A simplistic \shift and add" reconstruction algorithm was utilized for this research. Although limited in its ability to reconstruct a spatially and spectrally diverse scene, the algorithm was adequate for the testing …

Wi-Fi Evapotranspiration Irrigation Controller, Ryan Goodman

Electrical Engineering

This report discusses the applications of an Irrigation Controller with Wi-Fi connectivity, with focus on cost-effectiveness and usability. It addresses the amount to which traditional irrigation is wasteful, and proposes solutions to solve this problem. Methods for using online weather data resources to increase efficiency of residential landscaping are discussed in depth. Included is the procedural development of an irrigation controller using the Microchip Explorer 16 Development Board and TCP/IP Stack. Also discussed is web hosting and use of the scripting language PHP, and database MySQL. This project found inexpensive means for providing HTTP and FTP services. Results indicate an …

Theory Of ‘Selectivity’ Of Label-Free Nanobiosensors – A Geometro-Physical Perspective, Pradeep R. Nair, Muhammad A. Alam

Birck and NCN Publications

Modern label-free biosensors are generally far more sensitive and require orders of magnitude less incubation time compared to their classical counterparts. However, a more important characteristic regarding the viability of this technology for applications in Genomics/Proteomics is defined by the ‘Selectivity’, i.e., the ability to concurrently and uniquely detect multiple target biomolecules in the presence of interfering species. Currently, there is no theory of Selectivity that allows optimization of competing factors and there are few experiments to probe this problem systematically. In this article, we use the elementary considerations of surface exclusion, diffusion limited transport, and void distribution function to …

Nano-Scaled Fet Device For Cmos Technology, Prabhat Ranjan Pathak

Dissertations

In this work the 3-D structure of the Accumulation mode (ACM) and Enhance mode (ECM) FinFET was developed by the Taurus-Device Editor. The design of both ACM and ECM FinFET was optimized for high-performance IC applications to meet ITRS specification for I_off current, for 9nm gate length. The design of ACM and ECM FinFET is optimized, analyzed and compared against each other with respect to Darin Induced Barrier Lower (DIBL), Sub-threshold Swing(SS), operation and performance characteristics with varying electrical and physical parameters Silicon thickness (T_si), Source/Drain doping gradient (σ_sd), electrical channel length (L_eff ), …

Production Of Multiwall Carbon Nanotube For Alcohol Sensor Application., Ebtehal Saleh Alshaqaq

Student Works (2010-2019)

Multiwall carbon nanotube/polyethylene oxide (PEO), multiwall carbon nanoube/polyvinyl alcohol(PVA) and multiwall carbon nanotube/ polyvinyl alcohol(PVA)/zinc oxide(ZnO) have been tested as chemical sensors and detailed study on the effect of different gas concentration and material properties on gas sensitivity is presented. Initial composites were prepared by a simple solution casting and characterized by x-ray diffraction for ZnO, Fourier transform infra-red spectroscopy (FTIR) and scanning electron microscopy (SEM) to demonstrate crystallite size of ZnO, the morphology and surface area respectively. On the other hand, MWCNT/PEO , MWCNT/PVA , MWCNT/PVA/ZnO were prepared with different loading MWCNT and ZnO. The chemical sensing properties of …

Inductively Coupled Plasma Dry Etching Process On Planar Lightwave Circuit Fabrication., Chuah Khoon Seah

Student Works (2010-2019)

The main objective of this project is to master state-of-the-art techniques and knowledge in silica etching in order to achieve high quality waveguide circuit on Planar Lightwave Circuit devices. Another objective is to optimize the clean room research strength, surface characterization, microscopy techniques and similar semiconductor manufacturing processes.Initially, these processes were conducted with wet etching method that utilized diluted hydrofluoric acid (HF) and buffered oxide etch (BOE). Several problems arising such as mask peel-off, poor sidewall profile and defect waveguide channel during the pattern transfer process due to its’ isotropic nature. Alternatively, dry etching method was conducted via Inductively Coupled …

Excitation-Induced Germanium Quantum Dot Formation On Si (100)-(2×1), Ali Oguz Er, Hani E. Elsayed-Ali

Physics Faculty Publications

The effect of nanosecond pulsed laser excitation on the self-assembly of Ge quantum dots grown by pulsed laser deposition on Si (100)-(2×1) was studied. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to probe the quantum dot structure and morphology. At room temperature, applying the excitation laser decreased the surface roughness of the grown Ge film. With surface electronic excitation, crystalline Ge quantum dots were formed at 250 °C, a temperature too low for their formation without excitation. At a substrate temperature of 390 °C, electronic excitation during growth was found to improve the …

Optimization Of Inductively Coupled Plasma Dry Etching For Planar Waveguide Fabrication., Lim Weng Hong

Student Works (2010-2019)

Optimization of the Inductively Coupled Plasma (ICP) dry etching process parameters has been carried out. Seven main etching characteristics were considered in order to produce good etching quality. These characteristics are glass etching rates, selectivity of chromium to glass etching rate, channel side wall roughness, channel side wall vertical profile, channel cleanliness, critical dimension and resolution. Several ICP parameters that are affecting the etching characteristic were optimized in this work. These optimised ICP parameters obtained from this work are ICP power (880 W), bias power (45 W), operating chamber pressure (10 mtorr), reactant gas composition, reactant gas flow rate (35sccm …

Giant Raman Enhancement On Nanoporous Gold Film By Conjugating With Nanoparticles For Single-Molecule Detection, Lihua Qian, Biswajit Das, Yan Li, Zhilin Yang

Electrical & Computer Engineering Faculty Research

Hot spots have the contradictively geometrical requirements for both the narrowest interstices to provide strong near-field coupling, and sufficient space to allow entrance of the analytes. Herein, a two-step method is employed to create hot spots within hybrid nanostructures, which consist of self-supported nanoporous gold films with the absorbed probes and subsequent nanoparticle conjugates without surface agents or mechanical motion. The molecules confined into 1 nm interstice exhibit 2.9 × 10⁷ times enhancement in Raman scattering compared to pure nanoporous gold. Giant enhancement primarily results from strong near-field coupling between nanopore and nanoparticle, which is theoretically confirmed by finite-difference …

Growth And Characterization Of Silicon Carbide Thin Films Using A Nontraditional Hollow Cathode Sputtering Technique, James Huguenin-Love

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC.

Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed …