Magnetic Chiral Spin Textures By Imprinting,
2015
Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden
Magnetic Chiral Spin Textures By Imprinting, Robert Streubel, F. Kronast, U. Rössler, O. G. Schmidt, P. Fischer, D. Makarov
Robert Streubel Papers
The unique properties of non-trivial topological states, e.g. magnetic skyrmions [1] may path the way towards novel spintronic devices [2]. However, these spin textures have only been observed in special classes of materials possessing non-centrosymmetric crystal structure [1,3-6] and at low temperatures, which limits their application potential. We offer an alternate route to design synthetic magnetic heterostructures that resemble swirls, vortices or skyrmions with distinct topological charge densities at room temperature. By vertically stacking two magnetic nanopatterns with in-and out-of-plane magnetization and tailoring the interlayer exchange coupling, non-collinear spin textures with tunable topological charge can be imprinted (Fig. 1a).
Photocurrent-Voltage Relation Of Resonant Tunneling Diode Photodetectors,
2015
University of Richmond
Photocurrent-Voltage Relation Of Resonant Tunneling Diode Photodetectors, Andreas Pfenning, Favbian Hartmann, Mariama Rebello Sousa Dias, Fabian Langer, Martin Kamp, Leonardo Kleber Castelano, Victor Lopez-Richard, Gilmar Eugenio Marques, Sven Höfling, Lukas Worschech
Physics Faculty Publications
We have investigated photodetectors based on an AlGaAs/GaAs double barrier structure with a nearby lattice-matched GaInNAs absorption layer. Photons with the telecommunication wavelength λ = 1.3 µm lead to hole accumulation close to the double barrier inducing a voltage shift ΔV(V) of the current-voltage curve, which depends strongly on the bias voltage V. A model is proposed describing ΔV(V) and the photocurrent response in excellent agreement with the experimental observations. According to the model, an interplay of the resonant tunneling diode (RTD) quantum efficiency ƞ(V), the lifetime of photogenerated …
Silicon Nanostructures For High Capacity Anodes In Lithium Ion Batteries,
2015
Virginia Commonwealth University
Silicon Nanostructures For High Capacity Anodes In Lithium Ion Batteries, Tyler M. Selden
Theses and Dissertations
In this study we looked at several different silicon nanostructures grown for the purpose of optimizing anodes for lithium ion batteries. We primarily focused on two distinct types of structures, nanospirals, and Rugate structures. The samples were designed to have the mechanical robustness to endure the massive expansion caused by lithiation of silicon. All of the samples were grown using an electron beam evaporator. Scanning electron microscope images show that we have achieved the desired structural growth. The spirals were shown to have an average diameter of 343 nm on polished copper, and 366 nm on unpolished copper. The Rugate …
Magnetization Pumping And Dynamics In A Dzyaloshinskii-Moriya Magnet,
2015
University of Nebraska - Lncoln
Magnetization Pumping And Dynamics In A Dzyaloshinskii-Moriya Magnet, Alexey Kovalev, Utkan Güngördü
Department of Physics and Astronomy: Faculty Publications
We formulate a phenomenological description of thin ferromagnetic layers with inversion asymmetry where the single-domain magnetic dynamics experiences magnon current-induced torques and leads to magnon-motive forces. We first construct a phenomenological theory based on irreversible thermodynamics, taking into account the symmetries of the system. Furthermore, we confirm that these effects originate from Dzyaloshinskii-Moriya interactions from the analysis based on the stochastic Landau-Lifshitz-Gilbert equation. Our phenomenological results generalize to a general form of Dzyaloshinskii-Moriya interactions and to other systems, such as pyrochlore crystals and chiral magnets. Possible applications include spin current generation, magnetization reversal and magnonic cooling.
Strategies For Increasing The Néel Temperature Of Magnetoelectric Fe2Teo6,
2015
University of Nebraska-Lincoln
Strategies For Increasing The Néel Temperature Of Magnetoelectric Fe2Teo6, Sai Mu, Kirill D. Belashchenko
Department of Physics and Astronomy: Faculty Publications
Ways to increase the Néel temperature TN in the magnetoelectric Fe2TeO6 antiferromagnet are explored with the help of first-principles calculations. Substitution of larger ions like Zr or Hf for tellurium increases the superexchange angles. The compensating O vacancies tend to form bound complexes with Zr dopants, which do not degrade the electronic band gap. TN is estimated to increase by 15% at 12.5% Te → Zr substitution with such compensation. Substitution of N for O is favorable due to the decreased charge-transfer gap. The overall effect for N3− substitution compensated by O vacancies …
Manipulating Topological States By Imprinting Non-Collinear Spin Textures,
2015
Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden
Manipulating Topological States By Imprinting Non-Collinear Spin Textures, Robert Streubel, Luyang Han, Mi Young Im, Florian Kronast, Ulrich K. Rößler, Florin Radu, Radu Abrudan, Gungun Lin, Oliver G. Schmidt, Peter Fischer, Denys Makarov
Robert Streubel Papers
Topological magnetic states, such as chiral skyrmions, are of great scientific interest and show huge potential for novel spintronics applications, provided their topological charges can be fully controlled. So far skyrmionic textures have been observed in noncentrosymmetric crystalline materials with low symmetry and at low temperatures. We propose theoretically and demonstrate experimentally the design of spin textures with topological charge densities that can be tailored at ambient temperatures. Tuning the interlayer coupling in vertically stacked nanopatterned magnetic heterostructures, such as a model system of a Co/Pd multilayer coupled to Permalloy, the in-plane non-collinear spin texture of one layer can be …
Magnetic Soft X-Ray Tomography Of Magnetic Swiss Roll Architectures,
2015
Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden
Magnetic Soft X-Ray Tomography Of Magnetic Swiss Roll Architectures, Robert Streubel, F. Kronast, P. Fischer, O. G. Schmidt, D. Makarov
Robert Streubel Papers
A further increase in performance of state-of-the-art spin-electronics can be achieved by either miniaturizing its functional components or harnessing the third dimension. The first route, however, faces physical limitations as properties of nanostructures and their response to external stimuli can drastically change in reduced dimensions. An alternative way is to go from planar 2D structures to 3D architectures [1]. Such 3D functional elements can be obtained for example by rolling up initially planar strained thin films into Swiss roll like objects with multiple windings (Fig. 1a). A major advantage of this technology platform is the possibility to fabricate compact multifunctional …
Electrostatic Charge On Flying Hummingbirds
And Its Potential Role In Pollination,
2015
University of California, Berkeley
Electrostatic Charge On Flying Hummingbirds And Its Potential Role In Pollination, Marc Badger, Victor Manuel Ortega-Jimenez, Lisa Von Ribenau, Ashley Smiley, Robert Dudley, Alexei Gruverman , Editor
Alexei Gruverman Publications
Electrostatic phenomena are known to enhance both wind- and insect-mediated pollination, but have not yet been described for nectar-feeding vertebrates. Here we demonstrate that wild Anna's Hummingbirds (Calypte anna) can carry positive charges up to 800 pC while in flight (mean ± s.d.: 66 ± 129 pC). Triboelectric charging obtained by rubbing an isolated hummingbird wing against various plant structures generated charges up to 700 pC. A metal hummingbird model charged to 400 pC induced bending of floral stamens in four plants (Nicotiana, Hemerocallis, Penstemon, and Aloe spp.), and also attracted falling Lycopodium spores at distances of < 2 mm. Electrostatic forces may therefore influence pollen transfer onto nectar-feeding birds.
Effect Of Strain On Ferroelectric Field Effect In Strongly Correlated Oxide Sm0.5Nd0.5Nio3,
2015
University of Nebraska-Lincoln
Effect Of Strain On Ferroelectric Field Effect In Strongly Correlated Oxide Sm0.5Nd0.5Nio3, Le Zhang, Chen, H. J. Gardner, Mark A. Koten, Jeffrey E. Shield, Xia Hong
Nebraska Center for Materials and Nanoscience: Faculty Publications
We report the effect of epitaxial strain on the magnitude and retention of the ferroelectric field effect in high quality PbZr0.3Ti0.7O3 (PZT)/3.8–4.3 nm Sm0.5Nd0.5NiO3 (SNNO) heterostructures grown on (001) LaAlO3 (LAO) and SrTiO3 (STO) substrates. For SNNO on LAO, which exhibits a first-order metal-insulator transition (MIT), switching the polarization of PZT induces a 10K shift in the transition temperature TMI, with a maximum resistance change between the on and off states of ΔR = Ron ~75%. In sharp contrast, only up to 5% resistance change has been …
Multiscale Examination And Modeling Of Electron Transport In Nanoscale Materials And Devices,
2015
Michigan Technological University
Multiscale Examination And Modeling Of Electron Transport In Nanoscale Materials And Devices, Douglas R. Banyai
Dissertations, Master's Theses and Master's Reports - Open
For half a century the integrated circuits (ICs) that make up the heart of electronic devices have been steadily improving by shrinking at an exponential rate. However, as the current crop of ICs get smaller and the insulating layers involved become thinner, electrons leak through due to quantum mechanical tunneling. This is one of several issues which will bring an end to this incredible streak of exponential improvement of this type of transistor device, after which future improvements will have to come from employing fundamentally different transistor architecture rather than fine tuning and miniaturizing the metal-oxide-semiconductor field effect transistors (MOSFETs) …
Understanding Electronic Structure And Transport Properties In Nanoscale Junctions,
2015
Michigan Technological University
Understanding Electronic Structure And Transport Properties In Nanoscale Junctions, Kamal B. Dhungana
Dissertations, Master's Theses and Master's Reports - Open
Understanding the electronic structure and the transport properties of nanoscale materials are pivotal for designing future nano-scale electronic devices. Nanoscale materials could be individual or groups of molecules, nanotubes, semiconducting quantum dots, and biomolecules. Among these several alternatives, organic molecules are very promising and the field of molecular electronics has progressed significantly over the past few decades. Despite these progresses, it has not yet been possible to achieve atomic level control at the metal-molecule interface during a conductance measurement, which hinders the progress in this field. The lack of atomic level information of the interface also makes it much harder …
Computing And The Electrical Transport Properties Of Coupled Quantum Networks,
2015
Missouri University of Science and Technology
Computing And The Electrical Transport Properties Of Coupled Quantum Networks, Casey Andrew Cain
Doctoral Dissertations
In this dissertation a number of investigations were conducted on ballistic quantum networks in the mesoscopic range. In this regime, the wave nature of electron transport under the influence of transverse magnetic fields leads to interesting applications for digital logic and computing circuits. The work specifically looks at characterizing a few main areas that would be of interest to experimentalists who are working in nanostructure devices, and is organized as a series of papers. The first paper analyzes scaling relations and normal mode charge distributions for such circuits in both isolated and open (terminals attached) form. The second paper compares …
Analytical And Numerical Studies Of Photo-Injected Charge Transport In Molecularly-Doped Polymers,
2015
Missouri University of Science and Technology
Analytical And Numerical Studies Of Photo-Injected Charge Transport In Molecularly-Doped Polymers, Amrita Roy Chowdhury
Doctoral Dissertations
"The mobility of photo-injected charge carriers in molecularly-doped polymers (MDPs) exhibits a commonly observed, and nearly universal Poole-Frenkel field dependence, µ ~ exp [square root (ß0E)], that has been shown to arise from the correlated Gaussian energy distribution of transport sites encountered by charges undergoing hopping transport through the material. Analytical and numerical studies of photo-injected charge transport in these materials are presented here with an attempt to understand how specific features of the various models developed to describe these systems depend on the microscopic parameters that define them. Specifically, previously published time-of-flight mobility data for the molecularly …
Synthesis, Integration, And Physical Characterization Of Graphene And Carbon Nanotubes,
2015
University of Kentucky
Synthesis, Integration, And Physical Characterization Of Graphene And Carbon Nanotubes, David P. Hunley
Theses and Dissertations--Physics and Astronomy
Graphene and carbon nanotubes are among the hottest topics in physics today. Both materials exhibit numerous remarkable mechanical, electrical, optical, and thermal properties that make them promising materials for use in a large number of diverse applications, especially in the field of nanotechnology. One of the ultimate goals driving the fields of nanoscience and nanotechnology has been the attainment of atomically precise construction of intricate integrated systems consisting of materials with diverse behavior. Specifically, it is desirable to have high performance conductors, semiconductors, and insulators integrated into complex atomically precise arrangements. This dissertation represents the culmination of work that has …
A Study On Atomically Thin Ultra Short Conducting Channels, Breakdown, And Environmental Effects,
2015
University of Kentucky
A Study On Atomically Thin Ultra Short Conducting Channels, Breakdown, And Environmental Effects, Abhishek Sundararajan
Theses and Dissertations--Physics and Astronomy
We have developed a novel method of producing ultra-short channel graphene field effect devices on SiO2 substrates and have studied their electrical transport properties. A nonlinear current behavior is observed coupled with a quasi-saturation effect. An analytical model is developed to explain this behavior using ballistic transport, where the charge carriers experience minimal scattering. We also observe multilevel resistive switching after the device is electrically stressed. In addition, we have studied the evolution of the electrical transport properties of few-layer graphene during electrical breakdown. We are able to significantly increase the time scale of break junction formation, and we …
The Development And Implementation Of Systems To Study The Physical Properites Of Tantalum Trisulfide And Small-Molecule Organic Semiconductors,
2015
University of Kentucky
The Development And Implementation Of Systems To Study The Physical Properites Of Tantalum Trisulfide And Small-Molecule Organic Semiconductors, Hao Zhang
Theses and Dissertations--Physics and Astronomy
The charge-density-wave (CDW) material orthorhombic tantalum trisulfide (TaS3) is a quasi-one dimensional material that forms long ribbon shaped crystals, and exhibits unique physical behavior. We have measured the dependence of the hysteretic voltage-induced torsional strain (VITS) in TaS3, which was first discovered by Pokrovskii et. al. in 2007, on temperature and applied torque. Our experimental results shows that the application of torque to the crystal could also change the VITS time constant, magnitude, and sign. This suggests that the VITS is a consequence of residual torsional strain originally present in the sample which twists the polarizations …
Surface Photovoltage Transients For P-Type Algan,
2015
Virginia Commonwealth University
Surface Photovoltage Transients For P-Type Algan, Karen L. Phumisithikul
Theses and Dissertations
There is an understanding of surface photovoltage (SPV) behavior for GaN, yet little is known about the SPV behavior for AlGaN. In this work, a Kelvin probe was used to measure the SPV for p-type AlGaN. Very slow SPV transients were found in AlGaN, which could not be explained with a simple thermionic model. A possible explanation of this behavior is the segregation of impurities to the surface, which causes significant reduction of the depletion region width (down to 2 nm), with carrier tunneling and hopping becoming the dominant mechanisms responsible for the SPV transients. To verify this assumption, …
Low Dimensionality Effects In Complex Magnetic Oxides,
2015
University of South Florida
Low Dimensionality Effects In Complex Magnetic Oxides, Paula J. Lampen Kelley
USF Tampa Graduate Theses and Dissertations
Complex magnetic oxides represent a unique intersection of immense technological importance and fascinating physical phenomena originating from interwoven structural, electronic and magnetic degrees of freedom. The resulting energetically close competing orders can be controllably selected through external fields. Competing interactions and disorder represent an additional opportunity to systematically manipulate the properties of pure magnetic systems, leading to frustration, glassiness, and other novel phenomena while finite sample dimension plays a similar role in systems with long-range cooperative effects or large correlation lengths. A rigorous understanding of these effects in strongly correlated oxides is key to manipulating their functionality and device performance, …
Ferroelectric Polarization Dependent Interface Effects,
2014
University of Nebraska-Lincoln
Ferroelectric Polarization Dependent Interface Effects, Xiaohui Liu
Department of Physics and Astronomy: Dissertations, Theses, and Student Research
Utilization of the switchable spontaneous polarization of nanometer scale ferroelectric materials offers a promising avenue for future nanoelectronic devices. In this dissertation, we use density-functional calculations and phenomenological modeling to explore the effects of interface termination on thin-film heterostructures, the effects of electron doping in bulk ferroelectric materials on ferroelectric stability, and the effects of ferroelectric polarization switching on the electronic and transport properties of interfaces.
For SrRuO3/BaTiO3/SrRuO3 epitaxial heterostructures grown on SrTiO3, we find that the built-in dipole at the BaO/RuO2 terminated interface leads to a strong preference for one polarization. …
C-Metrics In Gauged Stu Supergravity And Beyond,
2014
Beijing Normal University
C-Metrics In Gauged Stu Supergravity And Beyond, H. Lu, Justin F. Vázquez-Poritz
Publications and Research
We construct charged generalizations of the dilaton C-metric in various fourdimensional theories, including STU gauged supergravity as well as a one-parameter family of Einstein-Maxwell-dilaton theories whose scalar potential can be expressed in terms of a superpotential. In addition, we present time-dependent generalizations of the dilaton C-metric and dilaton Ernst solutions, for which the time evolution is driven by the dilaton. These C-metric solutions provide holographic descriptions of a strongly-coupled three-dimensional field theory on the background of a black hole, a gravitational soliton, and a black hole undergoing time evolution.
