Electronic Devices and Semiconductor Manufacturing Commons^™

Real-Time Internal Temperature Estimation And Health Monitoring For Igbt Modules, Ze Wang

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar transistors (IGBTs), are among the most fragile components of power electronic converters. Thermomechanical stresses produced by temperature variations during operational and environmental loads are the major causes of IGBT degradation. As the devices are often operated under complex working conditions, temperature variations and the associated damage are difficult to predict during the converter design stage. A promising approach—online health monitoring and prognosis for power semiconductor devices—that can avoid device failure and effectively schedule maintenance has attracted much interest.

This dissertation research focused on real-time accurate internal temperature estimation …

Quantitative Analysis Of X-Ray Fluorescence Absorption And Emission For Thickness Determination Of Ald-Grown Metal And Oxide Nanoscaled Films, Tarek M. Abdel-Fattah, Alex Wixtrom, Larry Arias, Kai Zhang, Helmut Baumgart

Electrical & Computer Engineering Faculty Publications

This study describes the use of X-ray fluorescence spectroscopy (XRF) to determine the thickness of nanoscaled thin films of insulating oxides such as Al₂O₃, HfO₂, and ZrO₂, semiconducting oxides such as TiO₂, ZnO, and metals like Pt, on silicon substrates synthesized by atomic layer deposition (ALD) technology. XRF thickness measurements were compared with the predicted layer thickness based on calculations from known ALD growth rates for each metal or metal oxide films. The ALD growth rates have been calibrated with TEM cross-sectional measurements of the resulting film thickness. The results …

Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara

Theses and Dissertations

Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence measurements. Additionally, silicon-compatible, nontoxic, colloidally synthesizable 2-5 nm Ge_1-xSn_x alloy quantum-dots (QDs) are explored for potential visible to …

Low-Temperature Fabrication Process For Integrated High-Aspect Ratio Metal Oxide Nanostructure Semiconductor Gas Sensors, William Paul Clavijo

Theses and Dissertations

This work presents a new low-temperature fabrication process of metal oxide nanostructures that allows high-aspect ratio zinc oxide (ZnO) and titanium dioxide (TiO₂) nanowires and nanotubes to be readily integrated with microelectronic devices for sensor applications. This process relies on a new method of forming a close-packed array of self-assembled high-aspect-ratio nanopores in an anodized aluminum oxide (AAO) template in a thin (2.5 µm) aluminum film deposited on a silicon and lithium niobate substrate (LiNbO₃). This technique is in sharp contrast to traditional free-standing thick film methods and the use of an integrated thin aluminum film …

Mass Reduction Patterning Of Silicon-On-Oxide-Based Micromirrors, Harris J. Hall, Andrew Green, Sarah Dooley, Jason D. Schmidt, Laverne A. Starman, Derrick Langley, Ronald A. Coutu Jr.

Faculty Publications

It has long been recognized in the design of micromirror-based optical systems that balancing static flatness of the mirror surface through structural design with the system’s mechanical dynamic response is challenging. Although a variety of mass reduction approaches have been presented in the literature to address this performance trade, there has been little quantifiable comparison reported. In this work, different mass reduction approaches, some unique to the work, are quantifiably compared with solid plate thinning in both curvature and mass using commercial finite element simulation of a specific square silicon-on-insulator–based micromirror geometry. Other important considerations for micromirror surfaces, including surface …

Improvements To Micro-Contact Performance And Reliability, Tod V. Laurvick

Theses and Dissertations

Microelectromechanical Systems (MEMS) based devices, and specifically microswitches, continue to offer many advantages over competing technologies. To realize the benefits of micro-switches, improvements must be made to address performance and reliability shortfalls which have long been an issue with this application. To improve the performance of these devices, the micro-contacts used in this technology must be understood to allow for design improvements, and offer a means for testing to validate this technology and determine when such improvements are ready for operational environments. To build devices which are more robust and capable of continued operation after billions of cycles requires that …

Investigation Of The Optical Properties Of Pbse/Pbx Nanocrystals For Photodetector Applications, Haley Ann Morris

Graduate Theses and Dissertations

Lead selenide and lead selenide/lead sulfide core/shell nanocrystals were investigated for use in near infrared photodetectors. A colloidal synthesis method was used for both the core and core/shell configurations. The lead sulfide shell was examined in order to mitigate oxidation of the nanoparticle surface. Absorbance and photoluminescence spectra were measured at room temperature and 77 K, respectively. Transmission electron microscopy images were also obtained to confirm crystallography and size. Bulk lead selenide was simulated in WIEN2k utilizing the linear-augmented plane wave method of solving density functional theory to better understand the electronic structure of PbSe. The crystal structure, electron density, …

Si-Based Germanium-Tin (Gesn) Emitters For Short-Wave Infrared Optoelectronics, Seyed Amir Ghetmiri

Graduate Theses and Dissertations

Conventional integrated electronics have reached a physical limit, and their efficiency has been influenced by the generated heat in the high-density electronic packages. Integrated photonic circuits based on the highly developed Si complementary-metal-oxide-semiconductor (CMOS) infrastructure was proposed as a viable solution; however, Si-based emitters are the most challenging component for the monolithic integrated photonic circuits. The indirect bandgap of silicon and germanium is a bottleneck for the further development of photonic and optoelectronic integrated circuits.

The Ge1-xSnx alloy, a group IV material system compatible with Si CMOS technology, was suggested as a desirable material that theoretically exhibits a direct bandgap …

Design, Fabrication And Measurement Of A Plasmonic Enhanced Terahertz Photoconductive Antenna, Nathan Matthias Burford

Graduate Theses and Dissertations

Generation of broadband terahertz (THz) pulses from ultrafast photoconductive antennas (PCAs) is an attractive method for THz spectroscopy and imaging. This provides a wide frequency bandwidth (0.1-4 THz) as well as the straightforward recovery of both the magnitude and phase of the transmitted and/or reflected signals. The achieved output THz power is low, approximately a few microwatts. This is due to the poor conversion of the femtosecond laser used as the optical pump to useable current inside the antenna semiconducting material. The majority of THz power comes from the photocarriers generated within ~ 100 nm distance from the antenna electrodes. …

Growth Of Gesn And Gepb Alloy Films Using Thermal Evaporator, Hakimah Alahmed

Graduate Theses and Dissertations

Silicon is the most important semiconductor material used in microelectronic devices. As the number of transistors keep doubling every 24 months (Moore’s law), transistors continue scaling down in size, electrical interconnect is reaching its limits to keep up with the scaling down rate in integrated circuits. These limitations are related to interconnect density and power consumption. Hence, replacing electrical interconnect with optical interconnect on the chip or between chips has the ability to overcome these limitations. However, silicon has poor light emitting efficiency, and other substitutes such as III-V materials are not suitable due to high cost, lattice mismatch, and …

Strategies And Techniques For Fabricating Mems Bistable Thermal Actuators., Dilan Ratnayake

Electronic Theses and Dissertations

Bistable elements are beginning to appear in the field of MEMS as they allow engineers to design sensors and actuators which require no electrical power and possess mechanical memory. This research focuses on the development of novel strategies and techniques for fabricating MEMS bistable structures to serve as no electrical power thermal actuators. Two parallel strategies were explored for the design and fabrication of the critical bistable element. Both strategies involved an extensive material study on candidate thin film materials to determine their temperature coefficient of expansion and as-deposited internal stress properties. Materials investigated included titanium tungsten, Invar, silicon nitride …

Measurement And Analysis Of Iii-V & Ii-Vi Infrared Detectors: Radiometric, Noise Spectrum, And Radiation Tolerance Performance, Vincent M. Cowan

Nanoscience and Microsystems ETDs

Infrared (IR) hybrid detector arrays and discrete detectors operated in the space environment may be subjected to a variety of sources of natural radiation while in orbit. This means IR detectors intended for applications such as space-based intelligence, surveillance, and reconnaissance (ISR) or space-situational awareness (SSA) must not only have high performance (high quantum efficiency, h and low dark-current density, J_D, and preferably minimal 1/f noise content), but also their radiation tolerance or ability to withstand the effects of the radiation they would expect to encounter in space must be characterized and well understood. As the effects of …

"Feasibility Of Efficient Photovoltaics In Eastern Kentucky" / "Developing A 3-D Printed Solar Vehicle With Computational Fluid Dynamics (Cfd) Simulator", Adam N. Stanley, Matthew R. Hezseltine

Posters-at-the-Capitol

Abstract 1

Feasibility of Efficient Photovoltaics in Eastern Kentucky

Photovoltaics (PV-also called solar photovoltaic devices) are used to harness the power of the sun via the electronic process that occurs within semiconductor cells. The solar energy is absorbed by the cells, which causes the electrons to break away from their atoms, allowing them to flow within the material to produce electricity. This electricity will become the renewable energy for Kentucky, as the generation of coal will but come to a stop within the near future. Like Denmark who is running on 100% renewable generation we must stride to become fully …

High Power Optically Pumped Semiconductor Lasers For Sodium Guidestar Applications, Shawn W. Hackett

Optical Science and Engineering ETDs

Optically pumped semiconductor lasers (OPSLs) are shown to provide a much more compact and less expensive source for illumination of the sodium layer of the mesosphere for use as a sodium laser guidestar via single and two photon excitation schemes. This represents a revolution in laser guidestar technology as the cost, size, and power requirements for a laser guidestar system are shown to have been decreased by an order of magnitude with guidestar performance shown to be similar to previous sources. Sodium laser guidestar sources for broadband simultaneous illumination of multiple lines are developed and simulated. Simulations are then compared …

Pattern Reconfigurable Back-To-Back Microstrip Patch Antenna, Kansheng Yang, Xiulong Bao, Patrick Mcevoy, Max Ammann

Articles

A back-to- back microstrip patch antenna with a switchable pattern is proposed for WLAN applications. The patch elements, printed on FR-4 substrates with a common ground plane, are switched with a single-pole double-throw PIN diode circuit. Switching the feed selects either of two identical radiation patterns in the opposing hemispheres for spatial diversity that would benefit a distributed network.

Inquiry Of Graphene Electronic Fabrication, John Rausch Greene

Master's Theses

Graphene electronics represent a developing field where many material properties and devices characteristics are still unknown. Researching several possible fabrication processes creates a fabrication process using resources found at Cal Poly a local industry sponsor. The project attempts to produce a graphene network in the shape of a fractal Sierpinski carpet. The fractal geometry proves that PDMS microfluidic channels produce the fine feature dimensions desired during graphene oxide deposit. Thermal reduction then reduces the graphene oxide into a purified state of graphene. Issues arise during thermal reduction because of excessive oxygen content in the furnace. The excess oxygen results in …

Thermal Management Using Mems Bimorph Cantilever Beams, Ronald A. Coutu Jr., Robert S. Lafleur, John P. Walton, Laverne A. Starman

Faculty Publications

This paper examines a passive cooling technique using microelectromechanical systems (MEMS) for localized thermal management of electronic devices. The prototype was designed using analytic equations, simulated using finite element methods (FEM), and fabricated using the commercial PolyMUMPs™ process. The system consisted of an electronic device simulator (EDS) and MEMS bimorph cantilever beams (MBCB) array with beams lengths of 200, 250, and 300 μm that were tested to characterize deflection and thermal behavior. The specific beam lengths were chosen to actuate in response to heating associated with the EDS (i.e. the longest beams actuated first corresponding to the hottest portion of …

Direct Bandgap Cross-Over Point Of Ge1-YSnY Grown On Si Estimated Through Temperature-Dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne

Faculty Publications

Epitaxial Ge_1-ySn_y (y = 0%–7.5%) alloys grown on either Si or Ge-buffered Si substrates by chemical vapor deposition were studied as a function of Sn content using temperature-dependent photoluminescence (PL). PL emission peaks from both the direct bandgap (Γ-valley) and the indirect bandgap (L-valley) to the valence band (denoted by E_D and EID, respectively) were clearly observed at 125 and 175 K for most Ge_1-ySn_y samples studied. At 300 K, however, all of the samples exhibited dominant E_D emission with either very weak or no measureable E_ID emission. At 10 K, …

Atomistic Configuration Interaction Simulation Tool For Semiconductor Based Quantum Computing Devices, Jingbo Wu, Archana Tankasala, Jim Fonseca, Rajib Rahman, Gerhard Klimeck

The Summer Undergraduate Research Fellowship (SURF) Symposium

Solid-state devices are promising candidates for quantum computing applications due to obvious advantages in compatibility with semiconductor fabrication technologies and the extremely long coherent times of electron and nuclear spins in these devices. In such devices, electron interactions are crucial for single and two qubit gate operations. Thus it is essential to evaluate these electron-electron interactions accurately for precise qubit control. It is shown that Atomistic Configuration Interaction can be used to accurately determine electron-electron interactions in realistic semiconductor quantum computing devices. In this work, an online simulation tool on Atomistic Configuration Interaction has been implemented and published on nanoHUB.org, …

Large Scale Monolithic Solar Panel Simulation - A Study On Partial Shading Degradation, Suhas V. Baddela, Xingshu Sun, Muhammad A. Alam

The Summer Undergraduate Research Fellowship (SURF) Symposium

Shadow-induced degradation is a major concern for both power output and long-term reliability in solar cells. Apart from the obvious fact that shading reduces the amount of solar irradiance available to solar panels, it may lead to formation of hot spots, where solar cells are forced to reverse breakdown with localized heating, and potentially, permanent damage. To get a better understanding of shadow-induced degradation, we develop an electro-thermal coupled simulator that can self-consistently solve the electrical and thermal distributions of solar panel under arbitrary shading conditions. The simulation framework consists of two part: a) compact models that can describe the …