Electrical and Computer Engineering Commons^™

Miniature Ceramic Pifa For Uwb Band Group 3 And 6, David Kearney, Matthias John, Max Ammann

Articles

A ceramic chip planar inverted-F antenna (PIFA) is proposed for integration into a mobile handset providing UWB functionality across band groups 3 and 6. The antenna design exhibits a total efficiency of greater than 50% across the entire 6.39 GHz bandwidth while maintaining a very small volume of 57.6 mm^3 . The antenna uses a combination of the normal PIFA resonance and a second resonance due to the ceramic block to achieve a broad ultrawideband (UWB) bandwidth.

High-Speed Concatenation Of Frequency Ramps Using Sampled Grating Distributed Bragg Reflector Laser Diode Sources For Oct Resolution Enhancement, Brandon George, Dennis J. Derickson

Electrical Engineering

Brandon George and Dennis Derickson California Polytechnic State Univ. (USA) Wavelength tunable sampled grating distributed Bragg reflector (SG-DBR) lasers used for telecommunications applications have previously demonstrated the ability for linear frequency ramps covering the entire tuning range of the laser at 100 kHz repetition rates1. An individual SG-DBR laser has a typical tuning range of 50 nm. The InGaAs/InP material system often used with SG-DBR lasers allows for design variations that cover the 1250 to 1650 nm wavelength range. This paper addresses the possibility of concatenating the outputs of tunable SGDBR lasers covering adjacent wavelength ranges for enhancing the resolution …

Finite Tree-Based Decoding Of Low-Density Parity-Check Codes, Eric T. Psota

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Low-density parity-check codes are commonly decoded using iterative message-passing decoders, such as the min-sum and sum-product decoders. Computer simulations demonstrate that these suboptimal decoders are capable of achieving low probability of bit error at signal-to-noise ratios close to capacity. However, current methods for analyzing the behavior of the min-sum and sum-product decoders fails to produce usable bounds on the probability of bit error. Thus, the resulting probability of bit error when using these decoders remains largely unknown for signal-to-noise ratios beyond the reach of simulation. For this reason, it is worth considering alternative methods for decoding low-density parity-check codes. New …

Relating Electrophotographic Printing Model And Is013660 Standard Attributes, Elisa H. Barney Smith

Electrical and Computer Engineering Faculty Publications and Presentations

A mathematical model of the electrophotographic printing process has been developed. This model can be used for analysis. From this a print simulation process has been developed to simulate the effects of the model components on toner particle placement. A wide variety of simulated prints are produced from the model's three main inputs, laser spread, charge to toner proportionality factor and toner particle size. While the exact placement of toner particles is a random process, the total effect is not. The effect of each model parameter on the ISO 13660 print quality attributes line width, fill, raggedness and blurriness is …

2x1d Image Registration And Comparison, Geng Zheng, Elisa H. Barney Smith, Nader Rafla, Tim Andersen

Electrical and Computer Engineering Faculty Publications and Presentations

This paper presents a novel 2x1D phase correlation based image registration method for verification of printer emulator output. The method combines the basic phase correlation technique and a modified 2x1D version of it to achieve both high speed and high accuracy. The proposed method has been implemented and tested using images generated by printer emulators. Over 97% of the image pairs were registered correctly, accurately dealing with diverse images with large translations and image cropping.

Thermal Robotic Arm Controlled Spraying Via Robotic Arm And Vision System, Dermot Breen

Doctoral

The Tribology Surface Engineering industry is a worldwide multi billion euro industry with significant health and safety risks. The thermal spraying sector of this industry employs the technique of applying molten surface coating material to a substrate via a thermal spray process which is implemented either by manual spraying or pre-programmed robotic systems. The development of autonomous robotic systems for thermal spraying surface coating would significantly improve production and profitability over pre-programmed systems and improve health and safety over manual spraying. The aim of this research was to investigate and develop through software simulation, physical modelling and testing the development …

Theoretical Estimation Of Optical Absorption And Photoluminescence In Nanostructured Silicon; An Approach To Improve Efficiency In Nanostructured Solar Cells, Jaspreet S. Nayyar

Dissertations, Master's Theses and Master's Reports - Open

Renewable energy is growing in demand, and thus the the manufacture of solar cells and photovoltaic arrays has advanced dramatically in recent years. This is proved by the fact that the photovoltaic production has doubled every 2 years, increasing by an average of 48% each year since 2002.

Covering the general overview of solar cell working, and its model, this thesis will start with the three generations of photovoltaic solar cell technology, and move to the motivation of dedicating research to nanostructured solar cell. For the current generation solar cells, among several factors, like photon capture, photon reflection, carrier generation …

Fadaptive Backstepping Control Of Active Magnetic Bearings, Silu You

ETD Archive

A new control methodology, adaptive backstepping control (ABC), is applied to a linearized model of an active magnetic bearing (AMB). Our control objective is to regulate the deviation of the magnetic bearing from its equilibrium position in the presence of an external disturbance. The control approach is based on adaptive backstepping control, which is a combination of a recursive Lyapunov controller and adaptive laws. In this thesis, two types of adaptive backstepping methods are used. The first method is based on full-state feedback, for which all three states in the linearized AMB model (velocity, position, and current) are used to …

Evaluation And Comparison Of Mac Protocols In Wireless Sensor Networks, Sharmila Kollipara

ETD Archive

Wireless sensor network applications call for different kinds of network protocols at different levels of the network stack based on application requirements. A number of medium access control (MAC) protocols have been proposed in the literature. Evaluation of most of these MAC protocols have typically been based on simulation, and while such simulation provides interesting insight into the behavior of these protocols, artifacts caused by behavior of hardware is ignored. Further more, MAC protocols are usually evaluated by comparing the new protocol with others based on one or two metrics, the ones that determined the design decisions for the protocol …

Implementation And Evaluation Of A Tdma Based Protocol For Wireless Sensor Networks, Robert M. Fiske

ETD Archive

When evaluating MAC layer network protocols for wireless sensor networks performing simulations of a protocol's operation can provide great insight into the performance of the protocol. In order to prove that a protocol will work in a real setting and not just at the theoretical level, however, there is no substitute for evaluation with a physical implementation. This thesis discusses a physical implementation and evaluation of the Many-to-One-Sensor-to-Sink (MOSS) MAC layer protocol for sink based wireless sensor networks using the MAC Layer Architecture for TinyOS. MOSS is a Time Division Multiple Access (TDMA) based protocol first proposed in an earlier …

A Light Weight Fault Tolerance Framework For Web Services, Srikanth Dropati

ETD Archive

The increased usage of web services by many of the corporate industries to exchange their critical information over World Wide Web has directly impacted the need for high availability of web services. So in this work of ours we designed and developed a light weight fault tolerance framework for web services, by strictly biding ourselves to the design specifications of web services. We developed our framework by extending the open source implementation of Web services reliable messaging specifications. Our framework provides fault tolerance capability using the replication strategy, and can easily be reverted back to basic point to point reliable …

Two-Subband Conduction In A Gated High Density Inaln/Aln/Gan Heterostructure, H. Cheng, C. Kurdak, J. H. Leach, M. Wu, Hadis Morkoç

Electrical and Computer Engineering Publications

Magnetotransport measurements on an In0.16Al0.84N/AlN/GaN gated Hall bar sample have been performed at 0.28 K. By the application of a gate voltage we were able to vary the total two-dimensional electron gas density from 1.83×1013 to 2.32×1013 cm−2. Two frequency Shubnikov–de Haas oscillations indicate occupation of two subbands by electrons. The density of electrons in the first and second sublevels are found to increase linearly with gate voltage with a slope of 2.01×1012 cm−2/V and 0.47×1012 cm−2/V, respectively. And the quantum lifetimes for the first and second subbands ranged from 0.55 to 0.95×10−13 s and from 1.2 to 2.1×10−13 s.

Surface Plasmon Enhanced Uv Emission In Algan/Gan Quantum Well, J. Lin, A. Mohammadizia, A. Neogi, Hadis Morkoç, M. Ohtsu

Electrical and Computer Engineering Publications

The surface plasmon (SP) energy for resonant enhancement of light has shown to be modified by the epitaxial substrate and the overlying metalthin film. The modification of SP energy in AlGaN/GaN epitaxial layers is studied using spectroscopic ellipsometry for enhanced UV-light emission. Silver induced SP can be extended to the UV wavelength range by increasing the aluminum concentration in AlxGa1−xN epilayer. A threefold increase in the UV-light emission is observed from AlGaN/GaN quantum well due to silver induced SP. Photoluminescence lifetime measurements confirm the resonant plasmon induced increase in Purcell factor as observed from the PL intensity measurements.

Ingan Staircase Electron Injector For Reduction Of Electron Overflow In Ingan Light Emitting Diodes, X. Ni, X. Li, J. Lee, S. Liu, Vitaliy Avrutin, Ü. Özgür, Hadis Morkoç, A. Matulionis, T. Paskova, G. Mulholland, K. R. Evans

Electrical and Computer Engineering Publications

Ballistic and quasiballistic electron transport across the active InGaN layer are shown to be responsible for electron overflow and electroluminescence efficiency droop at high current levels in InGaN light emitting diodes both experimentally and by first-order calculations. An InGaN staircase electron injector with step-like increased In composition, an “electron cooler,” is proposed for an enhanced thermalization of the injected hot electrons to reduce the overflow and mitigate the efficiency droop. The experimental data show that the staircase electron injector results in essentially the same electroluminescence performance for the diodes with and without an electron blocking layer, confirming substantial …

Effect Of Hot Phonon Lifetime On Electron Velocity In Inaln/Aln/Gan Heterostructure Field Effect Transistors On Bulk Gan Substrates, J. H. Leach, C. Y. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, T. Paskova, E. Preble, K. R. Evans

Electrical and Computer Engineering Publications

We report on electron velocities deduced from current gain cutoff frequency measurements on GaN heterostructurefield effect transistors(HFETs) with InAlN barriers on Fe-doped semi-insulating bulk GaN substrates. The intrinsic transit time is a strong function of the applied gate bias, and a minimum intrinsic transit time occurs for gate biases corresponding to two-dimensional electron gas densities near 9.3×1012 cm−2. This value correlates with the independently observed density giving the minimum longitudinal optical phonon lifetime. We expect the velocity, which is inversely proportional to the intrinsic transit time, to be limited by scattering with non equilibrium (hot) phonons at the high fields …

Carrier Velocity In Inaln/Aln/Gan Heterostructure Field Effect Transistors On Fe-Doped Bulk Gan Substrates, J. H. Leach, M. Wu., X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, T. Paskova, E. Preble, K. R. Evans, Chang-Zhi Lu

Electrical and Computer Engineering Publications

We report microwave characteristics of field effect transistors employing InAlN/AlN/GaN heterostructures grown on low-defect-density bulk Fe-doped GaN substrates. We achieved unity current gain cutoff frequencies of 14.3 and 23.7 GHz for devices with gate lengths of 1 and 0.65 μm, respectively. Measurements as a function of applied bias allow us to estimate the average carrier velocity in the channel to be ∼1.0×107 cm/sec for a 1 μm device. Additionally, we found nearly no gate lag in the devices, which is considered a precondition for good performance under large signal operation.

Dominant Spin Relaxation Mechanism In Compound Organic Semiconductors, Supriyo Bandyopadhyay

Electrical and Computer Engineering Publications

Despite the recent interest in “organic spintronics,” the dominant spin relaxation mechanism of electrons or holes in an organic compound semiconductor has not been conclusively identified. There have been sporadic suggestions that it might be hyperfine interaction caused by background nuclear spins, but no confirmatory evidence to support this has ever been presented. Here, we report the electric-field dependence of the spin-diffusion length in an organic spin-valve structure consisting of an Alq3 spacer layer, and argue that these data, as well as the available data on the temperature dependence of this length, contradict the notion that hyperfine interactions relax spin. …

Electrically And Magnetically Tunable Phase Shifters Based On A Barium Strontium Titanate-Yttrium Iron Garnet Layered Structure, J. H. Leach, H. Liu, V. Avrutin, E. Rowe, Ü. Özgür, H. Morkoç, Y.-Y. Song, M. Wu

Electrical and Computer Engineering Publications

We report on the tuning of permittivity and permeability of a ferroelectric/ferromagnetic bilayer structure which can be used as a microwavephase shifter with two degrees of tuning freedom. The structure was prepared by the growth of a yttrium iron garnet (YIG) layer on a gadolinium gallium garnet substrate by liquid phase epitaxy, the growth of a barium strontium titanate (BST) layer on the YIG layer through pulsed laser deposition, and then the fabrication of a coplanar waveguide on the top of BST through e-beam evaporation and trilayer liftoff techniques. The phase shifters exhibit a differential phase shift of 38°/cm at …

Large Dielectric Tuning And Microwave Phase Shift At Low Electric Field In Epitaxial Ba0.5sr0.5tio3 On Srtio3, J. H. Leach, H. Liu, V. Avrutin, B. Xiao, Ü. Özgür, H. Morkoç, J. Das, Y. Y. Song, C. E. Patton

Electrical and Computer Engineering Publications

Dielectric properties of annealed and as-grown ferroelectricBa0.5Sr0.5TiO3 (BST) grown by pulsed laser deposition on sputtered BST seed layers on strontium titanate (STO) substrates were investigated at microwave frequencies in the realm of tunability of its dielectric constant as well as phase shifters based on this material. The as-grown layers were nearly fully relaxed with measured lattice parameters nearly identical to those of bulk BST. The tuning of the relative dielectric constant (∼1750 at zero bias at 10 GHz) of the annealed BST was found to be as high as 59% and 56% at 10 and 19 GHz, respectively. The analysis …

Bias Dependent Two-Channel Conduction In Inaln/Aln/Gan Structures, J. H. Leach, X. Ni, X. Li, M. Wu, Ü. Özgür, H. Morkoç, L. Zhou, D. A. Cullen, D. J. Smith, H. Cheng, Ç. Kurdak, J. R. Meyer, I. Vurgaftman

Electrical and Computer Engineering Publications

Due to growth temperature differences during deposition of GaN heterostructures utilizing InAlN barriers, an inadvertent parasitic GaN layer can form in the InAlN barrier layer. In structures utilizing AlN spacer layers, this parasitic layer acts as a second conduction channel with a carrier density dependent upon polarization charges and lattice strain as well as the surface potential. The effect of an additional GaN spacer layer in InAlN/AlN/GaN structures is assessed using simulations, electron-microscopy observations, magnetoconductivity measurements with gated Hall bar samples, and with quantitative mobility spectrum analysis. We propose a possible formation mechanism for the parasitic layer, and note that …