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Acquiring Commanding Heights Of “Gallium System” Semiconductor Technology, Assisting In Achievement Of The First Breakthrough In Optoelectronic Information Industry, Yun ZHANG 2023 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China

Acquiring Commanding Heights Of “Gallium System” Semiconductor Technology, Assisting In Achievement Of The First Breakthrough In Optoelectronic Information Industry, Yun Zhang

Bulletin of Chinese Academy of Sciences (Chinese Version)

No abstract provided.


Theoretical Analysis Of Charge Conduction And Rectification In Self-Assembled-Monolayers In Molecular Junctions, Francis Adoah 2023 University of Central Florida

Theoretical Analysis Of Charge Conduction And Rectification In Self-Assembled-Monolayers In Molecular Junctions, Francis Adoah

Electronic Theses and Dissertations, 2020-2023

As electrical devices shrink to the atomic scale, it is expected that Moore's law will soon be obsolete for semiconductor devices. In 1974, Avriam and Ratner predicted that organic devices could replace semiconductor technology, leading to extensive research on molecular-based organic devices. This dissertation delves into the theoretical frameworks used to examine the transport in molecular junctions and aims to enhance our comprehension of charge transport and conduction properties. The studies presented in this thesis illustrates that a molecule's alteration by just a single atom can change it from an insulator to a conductor, and also that, by fine-tuning the …


Origin Of Capacitance In Perovskite Solar Cells: Insight Vision On The Energy Band Diagram, Ziad Khalifa, Sameh Abdellatif, Monica Roman 2023 BUE

Origin Of Capacitance In Perovskite Solar Cells: Insight Vision On The Energy Band Diagram, Ziad Khalifa, Sameh Abdellatif, Monica Roman

Chemical Engineering

In recent years, perovskite solar cells (PSCs) have made significant progress, with fast improvements in energy conversion. Although they have become incredibly efficient in a short amount of time, they still face several obstacles before becoming a viable commercial technology. Researchers spent time looking for an equivalent circuit that could describe the J-V curves of PSCs and demonstrate the physical processes of optical absorption and carrier transit. In this paper, we proposed a model of perovskite solar cells (PSCs) using SCAPS software to determine the parasitic elements and show the solar cell's behavior. A previous model of a perovskite solar …


Investigation Of Vo2 Thin Films And Devices For Opto-Electromechanical Applications, Samee Azad 2023 Clemson University

Investigation Of Vo2 Thin Films And Devices For Opto-Electromechanical Applications, Samee Azad

All Dissertations

Specialized and optimized low pressure direct oxidation technique have been implemented to synthesize high quality VO2 thin films on various substrates (sapphire, SiO2/Si, AT-cut quartz, GaN/AlGaN/GaN/Si and muscovite). Structural and surface characterization methods such as X-ray diffraction, Raman spectroscopy and atomic force microscopy have been administered on the grown VO2 films which indicate their material quality. Transition of characteristics of the VO2 films are caused by semiconductor metal transition (SMT). This phenomenon is attributed as the change maker in transition of resistivity and transmitted optical power through the VO2 films. Apart the substrates mentioned, …


Study Of Radiation Effects In Gan-Based Devices, Han Gao 2023 Southern Methodist University

Study Of Radiation Effects In Gan-Based Devices, Han Gao

Electrical Engineering Theses and Dissertations

Radiation tolerance of wide-bandgap Gallium Nitride (GaN) high-electron-mobility transistors (HEMT) has been studied, including X-ray-induced TID effects, heavy-ion-induced single event effects, and neutron-induced single event effects. Threshold voltage shift is observed in X-ray irradiation experiments, which recovers over time, indicating no permanent damage formed inside the device. Heavy-ion radiation effects in GaN HEMTs have been studied as a function of bias voltage, ion LET, radiation flux, and total fluence. A statistically significant amount of heavy-ion-induced gate dielectric degradation was observed, which consisted of hard breakdown and soft breakdown. Specific critical injection level experiments were designed and carried out to explore …


Flux-Quanta Injection For Nonreciprocal Current Control In A Two-Dimensional Noncentrosymmetric Superconducting Structure, Serafim Teknowijoyo, Sara Chahid, Armen Gulian 2023 Chapman University

Flux-Quanta Injection For Nonreciprocal Current Control In A Two-Dimensional Noncentrosymmetric Superconducting Structure, Serafim Teknowijoyo, Sara Chahid, Armen Gulian

Mathematics, Physics, and Computer Science Faculty Articles and Research

We designed and experimentally demonstrated a four-terminal superconducting device, a “quadristor,” that can function as a nonlatching (reversible) superconducting switch from the diode regime to the resistive state by application of a control current much smaller than the main transport current. The device uses a vortex-based superconducting-diode mechanism that is switched back and forth via the injection of flux quanta through auxiliary current leads. Our finding opens a new research area in the field of superconducting electronics.


Is There A “Nationwide System” In Field Of Science And Technology In Japan?—Survey Of Semiconductor Technology, Huimin LI, Rongping MU, Yue HAO 2023 Institutes of Science and Development, Chinese Academy of Sciences, Beijing 100190, China School of Public Policy and Management, University of Chinese Academy of Sciences, Beijing 100049, China

Is There A “Nationwide System” In Field Of Science And Technology In Japan?—Survey Of Semiconductor Technology, Huimin Li, Rongping Mu, Yue Hao

Bulletin of Chinese Academy of Sciences (Chinese Version)

Different scholars interpret the connotations and characteristics of the “Nationwide System” in quite different ways and fail to reach a consensus about whether some measures that Japan implements to tackle key problems are attributed to a “Nationwide System”. On this basis, the work started with the connotations and characteristics of the “Nationwide System” in the field of science and technology, conducted a case study of measures taken by Japan to tackle key technical problems in the semiconductor technology, and analyzed whether these measures embody relevant characteristics of the “Nationwide System” from an empirical perspective, so as to demonstrate whether there …


Spice Modeling Of Biosensing Field-Effect Transistor, Alex Castro 2023 California Polytechnic State University, San Luis Obispo

Spice Modeling Of Biosensing Field-Effect Transistor, Alex Castro

Electrical Engineering

This project created a user manual on how to generate an easily configurable and implementable Spice model for Field Effect Transistor (FET) devices created in the Cal Poly clean room. The document contained step by step procedures depicting the proper execution techniques and example results for different experiments required to gather the proper information for these models. This testing methodology was shown for finding the numerous different device parameters of a FET, including the I-V curves, threshold voltage, and subthreshold current values. The manual then described how to transfer this data into a new Spice model to allow for simulation …


Characterization Of Low Power Hfo2 Based Switching Devices For In-Memory Computing, Aseel Zeinati 2023 New Jersey Institute of Technology

Characterization Of Low Power Hfo2 Based Switching Devices For In-Memory Computing, Aseel Zeinati

Theses

Oxide based Resistive Random Access Memory (RRAM) devices are investigated as one of the promising non-volatile memories to be used for in-memory computing that will replace the classical von Neumann architecture and reduce the power consumption. These applications required multilevel cell (MLC) characteristics that can be achieved in RRAM devices. One of the methods to achieve this analog switching behavior is by performing an optimized electrical pulse. The RRAM device structure is basically an insulator between two metals as metal-insulator-metal (MIM) structure. Where one of the primary challenges is to assign an RRAM stack with both low power consumption and …


Method Of Evanescently Coupling Whispering Gallery Mode Optical Resonators Using Liquids, Hengky Chandrahalim, Kyle T. Bodily 2023 Air Force Institute of Technology

Method Of Evanescently Coupling Whispering Gallery Mode Optical Resonators Using Liquids, Hengky Chandrahalim, Kyle T. Bodily

AFIT Patents

The present invention relates to evanescently coupling whispering gallery mode optical resonators having a liquid coupling as well as methods of making and using same. The aforementioned evanescently coupling whispering gallery mode optical resonators having a liquid couplings provide increased tunability and sensing selectivity over current same. The aforementioned. Applicants’ method of making evanescent-wave coupled optical resonators can be achieved while having coupling gap dimensions that can be fabricated using standard photolithography. Thus economic, rapid, and mass production of coupled WGM resonators-based lasers, sensors, and signal processors for a broad range of applications can be realized.


Machine Learning Based Prediction Models For Silicon Heterojunction Solar Cell Optimization, Rahul Jaiswal 2023 University of New Mexico - Main Campus

Machine Learning Based Prediction Models For Silicon Heterojunction Solar Cell Optimization, Rahul Jaiswal

Electrical and Computer Engineering ETDs

Silicon heterojunction solar cell of Heterojunction with Thin Intrinsic Layer (HIT) structure is a commercially available technology, and its market share will significantly increase by the next decade. With such a significant market share, any minor improvement in the device’s overall efficiency can be beneficial three folds - customer return on investment, industry revenue, and the overall carbon footprint (from manufacturing to recycling/ disposing of the device). Conventionally, device optimization for solar cells has been achieved using a hit & trial approach where multiple experiments are done to evaluate the best process conditions and device parameters. This approach has some …


Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers 2023 University of Arkansas, Fayetteville

Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers

Physics Undergraduate Honors Theses

Terahertz (THz) photoconductive antennas (PCAs) using 40nm thin-film flakes of black phosphorus (BP) and hexagonal boron nitride (hBN) have been shown computationally to be capable of THz emission comparable to those based on GaAs [2]. In this paper, I briefly describe the scientific and practical interest in THz emissions and explain what warrants research into black phosphorus as a photoconductive semiconductor in THz devices. Furthermore, I outline the basic principle of how these antennas work and mention alternative designs produced by other researchers in the past. Finally, I summarize the fabrication process of these antennas, as well as the measurements …


Universal Short-Circuit And Open-Circuit Fault Detection For An Inverter, Buck Brown 2023 Clemson University

Universal Short-Circuit And Open-Circuit Fault Detection For An Inverter, Buck Brown

All Theses

Short-circuit and open-circuit faults of an inverter’s power device often lead to catastrophic failure of the entire system if not detected and acted upon within a few microseconds, particularly for emerging wide bandgap (WGB) power semiconductors. While a significant amount of research has been done on the fast and accurate protection and detection of short-circuit faults, there has been less success corresponding to the research on open-circuit faults. Common downfalls include protection and detection that are too application-specific, take longer than a couple of microseconds, and are not cost-efficient. This study proposes a new open-circuit fault protection and detection system …


Iii-Nitride Triangular Microcantilevers For Multimodal Sensing Applications, Balaadithya Uppalapati 2023 Clemson University

Iii-Nitride Triangular Microcantilevers For Multimodal Sensing Applications, Balaadithya Uppalapati

All Dissertations

Micro-electromechanical systems (MEMS)-based sensors have gained significant attention due to their ability to sense, measure, and process various physical, chemical, and biological parameters. The small size of MEMS sensors provides numerous advantages, including low power consumption, high sensitivity, and rapid response time, making them suitable for various applications in healthcare, automotive, aerospace, and consumer electronics.

In the past few years, AlGaN/GaN MEMS devices have been found to offer several advantages over silicon-based MEMS devices. One of the main advantages of AlGaN/GaN MEMS is their high sensitivity to surface stresses and forces due to their high piezoelectric coefficients. This sensitivity allows …


Geopolitics Of Semiconductor Supply Chains: The Case Of Tsmc, Us-China-Taiwan Relations, And The Covid-19 Crisis, Aditya Sehgal 2023 SIT Study Abroad

Geopolitics Of Semiconductor Supply Chains: The Case Of Tsmc, Us-China-Taiwan Relations, And The Covid-19 Crisis, Aditya Sehgal

Independent Study Project (ISP) Collection

As the demand for more advanced forms of technology continues to grow, so does the global importance and reliance on semiconductors. This research paper examines the impact of semiconductor shortages on both consumer and military production, as well as the geopolitical implications embedded within the global supply chain.

The paper begins by providing an overview of semiconductors, the global semiconductor market, and the impact of COVID-19 on the industry’s supply chain. It also discusses the importance of the Taiwan Semiconductor Manufacturing Company (TSMC) in the industry and its role in addressing semiconductor shortages.

Next, the paper discusses the impact of …


Chatgpt As Metamorphosis Designer For The Future Of Artificial Intelligence (Ai): A Conceptual Investigation, Amarjit Kumar Singh (Library Assistant), Dr. Pankaj Mathur (Deputy Librarian) 2023 Central University of South Bihar, Panchanpur, Gaya, Bihar

Chatgpt As Metamorphosis Designer For The Future Of Artificial Intelligence (Ai): A Conceptual Investigation, Amarjit Kumar Singh (Library Assistant), Dr. Pankaj Mathur (Deputy Librarian)

Library Philosophy and Practice (e-journal)

Abstract

Purpose: The purpose of this research paper is to explore ChatGPT’s potential as an innovative designer tool for the future development of artificial intelligence. Specifically, this conceptual investigation aims to analyze ChatGPT’s capabilities as a tool for designing and developing near about human intelligent systems for futuristic used and developed in the field of Artificial Intelligence (AI). Also with the helps of this paper, researchers are analyzed the strengths and weaknesses of ChatGPT as a tool, and identify possible areas for improvement in its development and implementation. This investigation focused on the various features and functions of ChatGPT that …


The Wideband Tunability Of Double Gunn Diodes, Latarence Butts, Samir M. El-Ghazaly 2023 University of Arkansas, Fayetteville

The Wideband Tunability Of Double Gunn Diodes, Latarence Butts, Samir M. El-Ghazaly

Electrical Engineering Faculty Publications and Presentations

Gunn diodes use the Ridley–Watkins–Hilsum effect to generate low noise millimeter wave signals for communication and sensing applications. However, Monte Carlo calculations indicate that the velocity–field characteristics of compensated GaAs contain a second peak due to phonon scattering. A novel device that leverages this double Ridley–Watkins–Hilsum effect to achieve ultra-wideband tunability of low-noise millimeter waves is proposed in this article. The second region of negative differential mobility is gradually introduced in seven mobility profiles, which are each simulated in eight device lengths. It is found that a 2.5 μm Gunn diode with a compensation ratio of 0.6 operating at …


Strengthen Building Of Basic Reach Capacity For Semiconductor Research To Light Up “Beacon” Towards Realizing The Self-Reliance And Self-Improvement Of Semiconductors, Junwei LUO, Shushen LI 2023 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Strengthen Building Of Basic Reach Capacity For Semiconductor Research To Light Up “Beacon” Towards Realizing The Self-Reliance And Self-Improvement Of Semiconductors, Junwei Luo, Shushen Li

Bulletin of Chinese Academy of Sciences (Chinese Version)

No abstract provided.


Causes, Countermeasures And Enlightenment Of “Eu Semiconductor Crisis”: Interpretation Around The European Chips Act, Junfeng LI, Ying ZHANG 2023 Law School, Shanghai University, Shanghai 200444, China

Causes, Countermeasures And Enlightenment Of “Eu Semiconductor Crisis”: Interpretation Around The European Chips Act, Junfeng Li, Ying Zhang

Bulletin of Chinese Academy of Sciences (Chinese Version)

The European Union (EU) is one of the origins of the global semiconductor industry, but due to its structural defects in the semiconductor value chain, it has encountered a crisis of chip shortages and supply cuts since 2021. The European Chips Act drafted by EU proposes a path for semiconductor ecological construction, crisis intervention regulatory measures, and outlines a blueprint for a "national system for the chip industry with EU characteristics". These factors are of speculative significance and reference value for China to balance the relationship between the government and the market, subsidies and competition, key construction and inclusive support …


Analysis On Bottleneck And Prospect Of Integrated Circuit Talent Training Oriented To Sci-Tech Self-Reliance And Self-Strengthening At Higher Levels, Kaixuan GUAN, Jiang YU, Jianzhong ZHOU, Feng CHEN, Yan HAN 2023 ICBC Postdoctoral Workstation, Beijing 100140, China

Analysis On Bottleneck And Prospect Of Integrated Circuit Talent Training Oriented To Sci-Tech Self-Reliance And Self-Strengthening At Higher Levels, Kaixuan Guan, Jiang Yu, Jianzhong Zhou, Feng Chen, Yan Han

Bulletin of Chinese Academy of Sciences (Chinese Version)

The most essential feature of building a new development paradigm is to achieve sci-tech self-reliance and self-strengthening at higher levels. The integrated circuit industry, as an important pillar to achieve this essential feature, is facing a severe external situation. China's chip shortage pain begins with a shortage of talents. The structural problem of uneven development at the overall level of the industry makes it more difficult to effectively gather and distribute talents. To achieve sci-tech self-reliance and self-strengthening at higher levels, we need to be both demand-oriented and problem-oriented, which means not only to pay attention to the core technology …


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