Electronic Devices and Semiconductor Manufacturing Commons^™

Transition-Metal Ions In Β-Ga2O3 Crystals: Identification Of Ni Acceptors, Timothy D. Gustafson, Nancy C. Giles, Brian C. Holloway, J. Jesenovec, B. L. Dutton, M. D. Mccluskey, Larry E. Halliburton

Faculty Publications

Excerpt: Transition-metal ions (Ni, Cu, and Zn) in β-Ga₂O₃ crystals form deep acceptor levels in the lower half of the bandgap. In the present study, we characterize the Ni acceptors in a Czochralski-grown crystal and find that their (0/−) level is approximately 1.40 eV above the maximum of the valence band.

Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles

Mechanical Engineering ETDs

Lead zirconate titanate (PZT) has been a material of interest for sensor, actuator, and transducer applications in microelectromechanical systems (MEMS). This is due to their favorable piezoelectric, pyroelectric and ferroelectric properties. While various methods are available to deposit PZT thin films, radio frequency (RF) magnetron sputtering was selected to provide high quality PZT films with the added capability of batch processing. These sputter deposited PZT films were characterized to determine their internal film stress, Young’s modulus, composition, and structure. After characterization, the sputtered PZT samples were poled using corona poling and direct poling methods. As a means of comparison, commercially …

Sers Platform For Single Fiber Endoscopic Probes, Debsmita Biswas

LSU Doctoral Dissertations

Molecular detection techniques have huge potential in clinical environments. In addition to many other molecular detection techniques, endoscopic Raman spectroscopy has great ability in terms of minimal invasiveness and real-time spectra acquisition. However, Raman Effect is low in sensitivity, limiting the application. Surface-Enhanced Raman Scattering (SERS), addresses this limitation. SERS brings rough nano-metallic surfaces in contact with specimen molecules which enormously enhances Raman signals. This provides Raman spectroscopy with immense capabilities for diverse fields of applications.

Generally, in clinical probe applications, the spectrometer is brought near the target molecules for detection. Typically, optical fibers are used to couple spectrometers to …

Redefining Research In Nanotechnology Simulations: A New Approach To Data Caching And Analysis, Darin Tsai, Alan Zhang, Aloysius Rebeiro

The Journal of Purdue Undergraduate Research

No abstract provided.

Design Of Arbitrary Planar Optical Devices With Full Phase Control Using Nanoimprinting Of Refractive Index, Matthew Panipinto

All Theses

Planar optical devices offer a lightweight solution to the constraints found in traditional optical devices. While subwavelength patterning of optics offers attractive performance and size, traditional fabrication methods demand a trade-off between resolution and throughput that presents a significant hurdle for the widespread use of subwavelength devices. Nanoimprinting of refractive index (NIRI) is a novel fabrication method pioneered in previous work that offers promise in mitigating the throughput issues that hamstring traditional fabrication methods. However, NIRI has not been shown to impart full $2\pi$ phase control in planar optical devices, nor has a method for fabricating arbitrary designs using the …

Application Of The Core Shell Model For Strengthening Polymer Filament Interfaces, Yu-Chung Lin, Aniket Raut, Yiwei Fang, Yifan Yin, David Sprouster, Tai-De Li, Guillaume Freychet, Mikhail Zhernenkov, Steve Nitodas, Jonathan Sokolov, Yuval Shmueli, Miriam Rafailovich

Advanced Science Research Center

While surface segregation has been intensively studied in thin films, relatively little has been investigated in filament geometries. In contrast to thin films, the filament surface forms a continuum, with interactions both at the free air and internal filament interface, which makes it difficult to achieve an equilibrium configuration. This asymmetry has become particularly apparent with the increasing use of additive manufacturing where entire structures are constructed via layered deposition of filamentous layers from a moving thermal nozzle. In addition, this process is highly non-equilibrated with poor thermal retention and is responsible for insufficient filament–filament interfacial fusion and internal pore …

Potassium And Sodium Sensing Isfet Device And Array, Liam Stephen Hayes

Electrical Engineering

The use of Ion-Sensitive Field Effect Transistors (ISFETs) as a means of testing a person’s potassium concentration in real-time has broad applications in the consumer space. An avid runner could use such a device to keep track of their hydration and salt levels. A hospital could use it for patients who require around-the-clock remote monitoring, and a variation of ISFETs are currently being used as continuous glucose monitors for diabetes patients. While ISFETs are not a new development in the field of microelectronics, their use as wearable devices has recently become relevant. The goal of this project is primarily to …

Design And Analysis Of A Discrete, Pcb-Level Low-Power, Microwave Cross-Coupled Differential Lc Voltage-Controlled Oscillator, Pavin Singh Virdee

Master's Theses

Radio Frequency (RF) and Microwave devices are typically implemented in Integrated Circuit (IC) form to minimize parasitics, increase precision and tolerances, and minimize size. Although IC fabrication for students and independent engineers is cost-prohibitive, an abundance of low-cost, easily accessible printed circuit board (PCB) and electronic component manufacturers allows affordable PCB fabrication.

While nearly all microwave voltage-controlled oscillator (VCO) designs are IC-based, this study presents a discrete PCB-level cross-coupled, differential LC VCO to demonstrate this more affordable and accessible approach. This thesis presents a 65 mW, discrete component VCO PCB with industry-comparable RF performance. A phase noise of -103.7 dBc/Hz …

Low-Cost And Biodegradable Thermoelectric Devices Based On Van Der Waals Semiconductors On Paper Substrates, Gulsum Ersu, Carmen Munuera, Federico J. Mompean, Daniel Vaquero, Jorge Quereda, Jooao Elias Rodrigues, Jose A. Alonso, Eduardo Flores, Jose R. Ares, Isbael J. Ferrer, Adbullah M. Al-Enizi, Ayman Nafady, Sruthi Kuriakose, Joshua O. Island, Andres Castellanos-Gomez

Physics & Astronomy Faculty Research

We present a method to fabricate handcrafted thermoelectric devices on standard office paper substrates. The devices are based on thin films of WS2, Te, and BP (P-type semiconductors) and TiS3 and TiS2 (N-type semiconductors), deposited by simply rubbing powder of these materials against paper. The thermoelectric properties of these semiconducting films revealed maximum Seebeck coefficients of (+1.32 ± 0.27) mV K−1 and (−0.82 ± 0.15) mV K−1 for WS2 and TiS3, respectively. Additionally, Peltier elements were fabricated by interconnecting the P- and N-type films with graphite electrodes. A thermopower value up to 6.11 mV K−1 was obtained when the Peltier …

28 Ghz Patch Antenna Array With Reduced Mutual Coupling For 5g Communications Systems, Rahabu F. Mwang’Amba, Hashimu Uledi Iddi

Tanzania Journal of Engineering and Technology (TJET)

A 28 GHz patch antenna array with reduced mutual coupling for 5G communication systems is presented in this paper. Two elements antenna array was simulated with a periodic boundary to represent an infinity array. The antenna array is attached with a pair of the coupled directional coupler with a coupling value of -3.47 dB, and transmission lengths of 3.40 mm and 7.62 mm depending on the antenna array's magnitude and phase coefficient were designed and simulated. A reduced mutual coupling of -31.86 dB compared to -10.75 dB for an array without a decoupling network was observed. The wide scanning angle …

Raman Thermometry Of Graphene Based Thermal Materials, Pengcheng Xu

Electrical Engineering Theses and Dissertations

With the growing demand for high performance computing, we are pushing for higher performance integrated circuits at an ever faster rate. Recent advances in semiconductor production technology sees transistors with a 5 nm process devices being produced for consumer use. This enabled engineers to pack tens of billions of transistors in a package no larger than a fingernail. However, that brings up a problem that we have been long battling against. How can we get rid of the heat produced by these billions of transistors. The current electronic performance is bottle-necked by the ability of the package taking heat away …

Charger Robotic Air Hockey-Modified Air Hockey Table Featuring Automated Play Against A Human Opponent, Robert Geren

Honors Capstone Projects and Theses

No abstract provided.

Etching Process Development For Sic Cmos, Weston Reed Renfrow

Graduate Theses and Dissertations

Silicon Carbide (SiC) is an exciting material that is growing in popularity for having qualities that make it a helpful semiconductor in extreme environments where silicon devices fail. The development of a SiC CMOS is in its infancy. There are many improvements that need to be made to develop this technology further. Photolithography is the most significant bottleneck in the etching process; it was studied and improved upon. Etching SiC can be a challenge with its reinforced crystal structure. Chlorine-based inductively coupled plasma (ICP) etching of intrinsic SiC and doped SiC, SiO2, and Silicon has been studied. A baseline chlorine …

Study Of Thin Gan/Ingan/Gan Double Graded Structures For Future Photovoltaic Application, Mirsaeid Sarollahi

Graduate Theses and Dissertations

Indium gallium nitride (In_x Ga_(1-x) N) materials have displayed great potential for photovoltaic and optoelectronic devices due to their optical and electrical properties. Properties such as direct bandgap, strong bandgap absorption, thermal stability and high radiation resistance qualify them as great materials for photovoltaic devices. The tunable bandgap which absorbs the whole solar spectrum is the most significant feature which became attractive for scientists. The bandgap for these materials varies from 0.7 eV for InN to 3.4 eV for GaN covering from infrared to ultraviolet. In_x Ga_(1-x) N wurtzite crystal is grown on GaN buffer layer by Molecular Beam Epitaxy …

Sub-Bandgap Photon-Assisted Electron Trapping And Detrapping In Algan/Gan Heterostructure Field-Effect Transistors, Andrew Gunn

All Theses

We have investigated photon-assisted trapping and detrapping of electrons injected from the gate under negative bias in a heterostructure field-effect transistor (HFET). The electron injection rate from the gate was found to be dramatically affected by sub-bandgap laser illumination. The trapped electrons reduced the two-dimensional electron gas (2DEG) density at the AlGaN/GaN heterointerface but could also be emitted from their trap states by sub-bandgap photons, leading to a recovery of 2DEG density. The trapping and detrapping dynamics were found to be strongly dependent on the wavelength and focal position of the laser, as well as the gate bias stress time …

Design Tunneling Transistor And Schottky Junction Solar Cell Using Van Der Waals Semiconductor Heterostructure, Md Azmot Ullah Khan

LSU Doctoral Dissertations

Transition metal di-chalcogenide (TMDC) materials, being semiconductor in nature, offer Two-dimensional (2D) materials such as graphene and molybdenum disulfide (MoS₂) possess unique and unusual properties that are particularly applicable to nanoelectronics and photovoltaic devices. In this dissertation, four different projects have been done that encompass the implementation of these materials to improve the performance of future transistors and Schottky junction solar cells. In chapter 2, an analytical current transport model of a dual gate tunnel field-effect transistor (TFET) is developed by utilizing the principle of band-to-band tunneling (BTBT) and MoS₂ as the channel material. Later, using this …

Machine Learning Approach For Classifying Power Outage In Secondary Electric Distribution Network, Stephan Mgaya, Hellen Maziku

Tanzania Journal of Engineering and Technology (TJET)

Power outage is the problem that hinders social and economic development especially for developing countries like Tanzania. Frequent power outages damage electric equipment, and negatively affect the industrial production process. Power outages cannot be completely eradicated due to uncontrolled cause like natural calamities but technical challenges can be managed and hence reducing power outages. The existing manual methods used to locate power outage like customer calls is inefficient and time consuming. On the other hand, modern method like the Advanced Metering Infrastructure (AMI) still faces a challenge in effectively classifying power line outage due to the nature of imbalanced datasets. …

An Iot Based Worker Safety Helmet Using Cloud Computing Technology, Yuthriya Iddi Khamis, Mahmoud Alawi, Waheed Muhammad Sanya

Tanzania Journal of Engineering and Technology (TJET)

Miner safety and security is a major challenge around the world due to the exposure to toxic gases that are frequently released in underground mines. Miners' health is adversely affected primarily by toxic gases, which endanger the workers' lives. Furthermore, human sensory abilities do not detect these dangerous gases. As a result, this paper proposes a safety monitoring system that includes a temperature sensor, humidity sensor, and gas sensors to detect harmful gases and alert miners to those harmful gases using the smart helmet they wear. These gases are transmitted to the control station via the cloud using Internet of …

Surface-Wave Coupling In Double Floquet Sheets Supporting Phased Temporal Wood Anomalies, Ya-Wen Tsai, Yao-Ting Wang, Emanuele Galiffi, Andrea Alù, Ta-Jen Yen

Advanced Science Research Center

We investigate symmetry-selective surface-mode excitation in a general periodically time-modulated double-layer system, where the modulation of the two layers has a constant phase difference. By deriving a semi-analytic transfer matrix formalism of a Drude-dispersive double-layer structure with periodic time-modulation, we calculate the scattering amplitudes and the corresponding transmission coefficient. Our results show that the phase-difference between the modulation of the two sheets plays an essential role in significantly enhancing and selectively exciting either the even or odd surface mode with high efficiency. We verify our calculations with full-wave time-domain simulations, showing that efficient switching between the surface-wave excitation of the …

Characterization Of Electrophoretic Deposited Zinc Oxide Nanopartices For The Fabrication Of Next-Generation Nanoscale Electronic Applications, Fawwaz Abduh A. Hazzazi

LSU Doctoral Dissertations

Several reports state that it is crucial to analyze nanoscale semiconductor materials and devices with potential benefits to meet the need for next-generation nanoelectronics, bio, and nanosensors. The progress in the electronics field is as significant now, with modern technology constantly evolving and a greater focus on more efficient robust optoelectronic applications. This dissertation focuses on the study and examination of the practicality of Electrophoretic Deposition (EPD) of zinc oxide (ZnO) nanoparticles (NPs) for use in semiconductor applications.

The feasibility of several synthesized electrolytes, with and without surfactants and APTES surface functionalization, is discussed. The primary objective of this study …