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Optimised Toolbox For The Design Of Rotary Reluctance Motors, Grace I, Rozita Teymourzadeh, Bright S, Aravind CV 2010 Faculty of Engineering, Technology and Built Environment UCSI University

Optimised Toolbox For The Design Of Rotary Reluctance Motors, Grace I, Rozita Teymourzadeh, Bright S, Aravind Cv

Dr. Rozita Teymourzadeh, CEng.

Operation of the rotary reluctance machine is highly affected due to the sequential attraction-repulsion principle of the adjacent phase excitation. The problem has been identified and addressed by various researchers in the past decades. Effective magnetic design is one way of minimizing the effect. However it is tedious and time consuming as the design procedure involve higher analytical derivation and calculations. This paper presents a simpler graphical user interface toolbox to use for the design of reluctance motors. The developed interface calculates the analytical values of the aligned, unaligned and intermediate inductance values so that the user can interpret the …


Characterization And Fabrication Of Active Matrix Thin Film Transistors For An Addressable Microfluidic Electrowetting Channel Device, Seyeoul Kwon 2010 University of Tennessee - Knoxville

Characterization And Fabrication Of Active Matrix Thin Film Transistors For An Addressable Microfluidic Electrowetting Channel Device, Seyeoul Kwon

Doctoral Dissertations

The characterization and fabrication of active matrix thin film transistors (TFTs) has been studied for an addressable microfluidic electrowetting channel device as application. A new transparent semiconductor material, Amorphous Indium Gallium Zinc Oxide (a-IGZO), is used for TFT, which shows high electrical performance rather than amorphous silicon based TFT; higher mobility and even higher transparency. The purpose of this dissertation is to optimize each TFT process including the optimization of a-IGZO properties to achieve robust device for application. To minimize hysteresis of TFT curves, the gate dielectric is discussed extensively in this dissertation. By optimizing gas ratio of NH3SiH4, it …


Design A Stable 14-To-20-Ghz Source, M. Moghavvemi, A. Attaran, Hossein Ameri Mahabadi 2010 Department of Electrical Engineering, University of Malaya

Design A Stable 14-To-20-Ghz Source, M. Moghavvemi, A. Attaran, Hossein Ameri Mahabadi

Hossein Ameri Mahabadi

Careful selection of key components and the use of straightforward multiplication schemes can be applied to the design of a low-noise frequency synthesizer for Ku-band signals to 20 GHz.


Control Of A High-Performance Z-Source Inverter For Fuel Cell/Supercapacitor Hybrid Electric Vehicles, Omar Ellabban, Joeri Van Mierlo, Philippe Lataire 2010 Helwan University

Control Of A High-Performance Z-Source Inverter For Fuel Cell/Supercapacitor Hybrid Electric Vehicles, Omar Ellabban, Joeri Van Mierlo, Philippe Lataire

Omar Ellabban

This paper presents a supercapacitor (SC) module connected in parallel with fuel cell (FC) stack to supply a high-performance Z-Source Inverter (HP-ZSI) feeding a three phase induction motor for hybrid electric vehicles applications. The supercapacitor is connected between the input diode and the bidirectional switch of the highperformance ZSI topology. The indirect field-oriented control (IFOC) method is used to control an induction motor speed during motoring and regenerative braking operations to produce the modulation index and a dual loop controller is used to control the Z-network capacitor voltage to produce the shoot-through duty ratio. MATLAB simulation results verified the validity …


An Investigation Of Carrier Transport In Hafnium Oxide/Silicon Dioxide Mos Gate Dielectric Stacks From 5.6-400k, Richard G. Southwick III 2010 Boise State University

An Investigation Of Carrier Transport In Hafnium Oxide/Silicon Dioxide Mos Gate Dielectric Stacks From 5.6-400k, Richard G. Southwick Iii

Boise State University Theses and Dissertations

Hafnium oxide (HfO2) is replacing silicon dioxide (SiO2) as the gate dielectric in metal oxide semiconductor (MOS) structures driven mainly by need to reduce high leakage currents observed in sub-2nm SiO2. The high dielectric constant of HfO2 (~25) compared to SiO2 (3.9 bulk) allows a thicker HfO2 layer to be used in place of the thinner SiO2 layer thereby reducing the gate leakage current in MOS devices while maintaining the same capacitive coupling provided by the thinner SiO2. However, incorporating HfO2 into MOS devices produces a SiO …


Modeling The Random Component Of Manufacturing Yield Of Integrated Circuits., David L. Farnsworth, Michael E. Long 2010 Rochester Institute of Technology

Modeling The Random Component Of Manufacturing Yield Of Integrated Circuits., David L. Farnsworth, Michael E. Long

Articles

A model is created for the number of integrated circuits that are good from each wafer on which they are fabricated. The goal is to separate the random or common cause loss from the systematic or special loss. The random loss from this type of process is modeled so that false alarms indicating systematic loss are less likely to occur and so that the structure of the systematic loss can be determined.


Universality Of Non-Ohmic Shunt Leakage In Thin-Film Solar Cells, Sourabh Dongaonkar, Jonathan D. Servaites, Grayson M. Ford, Stephen Loser, James E. Moore, Ryan M. Gelfand, Hooman Mohseni, Hugh W. Hillhouse, Rakesh Agrawal, Mark A. Ratner, Tobin J. Marks, Mark Lundstrom, Muhammad A. Alam 2010 Purdue University - Main Campus

Universality Of Non-Ohmic Shunt Leakage In Thin-Film Solar Cells, Sourabh Dongaonkar, Jonathan D. Servaites, Grayson M. Ford, Stephen Loser, James E. Moore, Ryan M. Gelfand, Hooman Mohseni, Hugh W. Hillhouse, Rakesh Agrawal, Mark A. Ratner, Tobin J. Marks, Mark Lundstrom, Muhammad A. Alam

Birck and NCN Publications

We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells, and Cu(In,Ga)Se2 (CIGS) cells. All three device types exhibit a significant shunt leakage current at low forward bias (V< ∼ 0.4) and reverse bias, which cannot be explained by the classical solar cell diode model. This parasitic shunt current exhibits non-Ohmic behavior, as opposed to the traditional constant shunt resistance model for photovoltaics. We show here that this shunt leakage (Ish), across all three solar cell types considered, is characterized by the following common phenomenological features: (a) voltage symmetry about V = 0, (b) nonlinear (power law) voltage dependence, and (c) extremely weak temperature dependence. Based on this analysis, we provide a simple method of subtracting this shunt current component from …


Design And Modeling Of A 40w Microwave Switch In Qfn 2x2 Package, Chin-Leong Lim 2010 Avago Technologies, Malaysia

Design And Modeling Of A 40w Microwave Switch In Qfn 2x2 Package, Chin-Leong Lim

Chin-Leong Lim

This paper describes a Quad Flat Non-lead (QFN 2x2) packaged PIN diode switch that is capable of handling Continuous Wave (CW) power up to 40W and WCDMA signal up to 10W. The target application is the Transmit arm of a Transmit Receive switch for cellular base-stations. The part was developed in response to this market segment's aggressive cost-cutting pressure. Prior designs relied on more expensive ceramic packages.


Mems-Based Pufs For Cryptographic Applications, Nicholas Shane Patrick 2010 University of Alabama in Huntsville

Mems-Based Pufs For Cryptographic Applications, Nicholas Shane Patrick

Honors Capstone Projects and Theses

No abstract provided.


Ultra-Thin-Film Aln Contour-Mode Resonators For Sensing Applications, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza 2010 University of Pennsylvania

Ultra-Thin-Film Aln Contour-Mode Resonators For Sensing Applications, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of ultra-thin-film (250 nm) aluminum nitride (AlN) microelectromechanical system (MEMS) contour mode resonators (CMRs) suitable for the fabrication of ultra-sensitive gravimetric sensors. The device thickness was opportunely scaled in order to increase the mass sensitivity, while keeping a constant frequency of operation. In this first demonstration the resonance frequency of the device was set to 178 MHz and a mass sensitivity as high as 38.96 KHz⋅μm2/fg was attained. This device demonstrates the unique capability of the CMR-S technology to decouple resonance frequency from mass sensitivity.


Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chnegjie Zuo, Gianluca Piazza 2010 University of Pennsylvania

Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chnegjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) super high frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …


Lna Based On A Low Cost (~Usd1.30) Commercial Gaas Phemt Mmic Offers Wideband (0.4~1.4 Ghz) And Room-Temperature Low Noise (~0.3 Db) Performances That Satisfy The Ska Low Cost And No-Cooling Requirement, Chin-Leong Lim 2010 Avago Technologies, Malaysia

Lna Based On A Low Cost (~Usd1.30) Commercial Gaas Phemt Mmic Offers Wideband (0.4~1.4 Ghz) And Room-Temperature Low Noise (~0.3 Db) Performances That Satisfy The Ska Low Cost And No-Cooling Requirement, Chin-Leong Lim

Chin-Leong Lim

Introduction: New generations of radio telescopes such as the Square Kilometre Array consist of millions of receivers scattered over a continent. The array’s quantity and geographic considerations ruled out the traditional radio astronomy LNA implementation; i.e. costly InP devices cooled by high-maintenance closed-cycle helium (He) refrigerators. Several LNA designs have been proposed to address the cost and room-temperature operation constraints but none appear a clear winner. Peltier and package-scale cooling have also been proposed as a lower cost/maintenance alternative to He cooling but when multiplied by the quantity required can still carve a significant chunk of the budget. Additionally, cooling …


Application Of Signal Advance Technology To Electrophysiology, Chris M. Hymel 2010 University of Texas Graduate School of Biomedical Sciences at Houston

Application Of Signal Advance Technology To Electrophysiology, Chris M. Hymel

Dissertations & Theses (Open Access)

Medical instrumentation used in diagnosis and treatment relies on the accurate detection and processing of various physiological events and signals. While signal detection technology has improved greatly in recent years, there remain inherent delays in signal detection/ processing. These delays may have significant negative clinical consequences during various pathophysiological events. Reducing or eliminating such delays would increase the ability to provide successful early intervention in certain disorders thereby increasing the efficacy of treatment.

In recent years, a physical phenomenon referred to as Negative Group Delay (NGD), demonstrated in simple electronic circuits, has been shown to temporally advance the detection of …


Wideband Limiter Fits Sot-323 Pack, Chin-Leong Lim 2010 Avago Technologies, Malaysia

Wideband Limiter Fits Sot-323 Pack, Chin-Leong Lim

Chin-Leong Lim

Limiters protect wireless receiver front-ends from damage due to signal overload. The Schottky-PIN limiter is more protective than the self-biased PIN limiter because the former's limiting threshold is ~10 dB lower. Present implementation of the Schottky-PIN limiter use separate PIN and Schottky diodes. Additionally, some prior knowledge is necessary to select the correct PIN and Schottky diodes for limiter service. To miniaturize the limiter and to simplify the diode selection process, we combined a pair of limiter-optimized PIN and Schottky diodes into a compact and low-cost SOT-323 package. This paper describes the design, fabrication and experimental validation of the industry's …


Design An X-Band Frequency Synthesizer, Hossein Ameri Mahabadi, A. Attaran, M. Moghavvemi 2010 Department of Electrical Engineering, University of Malaya

Design An X-Band Frequency Synthesizer, Hossein Ameri Mahabadi, A. Attaran, M. Moghavvemi

Hossein Ameri Mahabadi

This frequency synthesizer design aims at achieving low phase and high reliability for X-band digital microwave radio applications, using a commercial device and frequency tripling techniques.


The Applications And Limitations Of Printable Batteries, Matthew Delmanowski 2010 California Polytechnic State University - San Luis Obispo

The Applications And Limitations Of Printable Batteries, Matthew Delmanowski

Graphic Communication

This study focuses on the potential applications for printed batteries and how they could affect the printing industry. It also analyzes the main problems associated with manufacturing this technology and what needs to be done to overcome these issues. To find the answers to these questions, two methods of research were used. The first was through the elite and specialized interviewing of Dr. Scott Williams of Rochester Institute of Technology and Professor Nancy Cullins from Cal Poly. The second form of research was a common, yet useful, method called secondary research. This entailed looking at recent written research papers about …


Enhanced Light Extraction Efficiency From Gan Light Emitting Diodes Using Photonic Crystal Grating Structures, Simeon S. Trieu 2010 California Polytechnic State University, San Luis Obispo

Enhanced Light Extraction Efficiency From Gan Light Emitting Diodes Using Photonic Crystal Grating Structures, Simeon S. Trieu

Master's Theses

Gallium nitride (GaN) light emitting diodes (LED) embody a large field of research that aims to replace inefficient, conventional light sources with LEDs that have lower power, higher luminosity, and longer lifetime. This thesis presents an international collaboration effort between the State Key Laboratory for Mesoscopic Physics in Peking University (PKU) of Beijing, China and the Electrical Engineering Department of California Polytechnic State University, San Luis Obispo. Over the course of 2 years, Cal Poly’s side has simulated GaN LEDs within the pure blue wavelength spectrum (460nm), focusing specifically on the effects of reflection gratings, transmission gratings, top and bottom …


Negative Conductance Load Modulation Rf Power Amplifier, Cody R. Neslen 2010 California Polytechnic State University, San Luis Obispo

Negative Conductance Load Modulation Rf Power Amplifier, Cody R. Neslen

Master's Theses

The number of mobile wireless devices on the market has increased substantially over the last decade. The frequency spectrum has become crowded due to the number of devices demanding radio traffic and new modulation schemes have been developed to accommodate the number of users. These new modulation schemes have caused very poor efficiencies in power amplifiers for wireless transmission systems due to high peak-to-average power ratios (PAPR). This thesis first presents the issue with classical power amplifiers in modern modulation systems. A brief overview of current attempts to mitigate this issue is provided. A new RF power amplifier topology is …


Electromagnetic Solutions For The Agricultural Problems, Hadi Aliakbarian, Amin Enayati, Maryam Ashayer Soltani, Hossein Ameri Mahabadi, Mahmoud Moghavvemi 2010 Department of Electrical Engineering, University of Malaya

Electromagnetic Solutions For The Agricultural Problems, Hadi Aliakbarian, Amin Enayati, Maryam Ashayer Soltani, Hossein Ameri Mahabadi, Mahmoud Moghavvemi

Hossein Ameri Mahabadi

Introduction In the recent years, interactive relations between various branches of science and technology have improved interdisciplinary fields of science. In fact, most of the research activities take place somewhere among these branches. Therefore, a specialist from one branch usually can propose novel methods, whenever enters a new field, based on his previous knowledge. Taking a look at the extensive problems in the field of agriculture, an expert in the field of Electromagnetic waves can easily suggest some innovative solutions to solve them. The major suffering problems with which a farmer faces are the damages caused by the harmful pests …


Pin Switch Protects Lna From Overloads, Chin-Leong Lim 2010 Avago Technologies, Malaysia

Pin Switch Protects Lna From Overloads, Chin-Leong Lim

Chin-Leong Lim

The objective of this paper is to describe how a Microwave Monolithic Integrated Circuit (MMIC) can be paired with an external PIN diode bypass switch in the implementation of a Low Noise Amplifier (LNA) with overload protection feature for mobile TV receiver applications. In the preliminary phase of the design, competing schemes for reducing LNA gain were reviewed and their respective cost-performance trade-offs were benchmarked against the customer’s set of requirements. Based on the selected design, a “proof of concept” prototype was then assembled and tested. The key components of this switch by-passable LNA were sourced from in-house product portfolio, …


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