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Articles 1831 - 1836 of 1836
Full-Text Articles in Physics
Nuclear Magnetic Resonance Investigation Of The Metal-To-Semiconductor Transition In Crystalline Cdo, R. P. Benedict, David C. Look
Nuclear Magnetic Resonance Investigation Of The Metal-To-Semiconductor Transition In Crystalline Cdo, R. P. Benedict, David C. Look
Physics Faculty Publications
Measurements of the Cd113 nuclear-spin-lattice relaxation time (T1) and resonance frequency shift (K) were carried out in several samples of polycrystalline n-type CdO over the temperature (T) range 1.4-300°K, frequency (ν) range 2-10 MHz, and carrier concentration (Ne) range 3.3-44×1018 cm-3. For Ne>1019 cm-3, we find that T1∝Ne-2/3T-1 and K∝Ne1/3, showing that the nuclei are interacting with degenerate conduction electrons. Furthermore, the Korringa relationship holds and the calculated electron density at a nucleus is almost the same as …
Time Saving In Measurement Of Nmr And Epr Relaxation Times, David C. Look, Donald R. Locker
Time Saving In Measurement Of Nmr And Epr Relaxation Times, David C. Look, Donald R. Locker
Physics Faculty Publications
By producing a train of absorption or dispersion signals (continuous‐wave magnetic resonance) or free induction decays (pulsed magnetic resonance) it is possible to save time in spin‐lattice relaxation measurements due to the fact that it is not necessary to wait for equilibrium magnetization before initiating the train. The relaxation time may be calculated from the train according to a simple rapidly converging iteration.
Nmr Determination Of The Conduction-Electron Hyperfine Interaction In Crystalline Cdo, David C. Look
Nmr Determination Of The Conduction-Electron Hyperfine Interaction In Crystalline Cdo, David C. Look
Physics Faculty Publications
Measurements of the Cd113 nuclear-spin-lattice relaxation time T1 and Hall effect in crystalline CdO, a degenerate semiconductor, have yielded the contact hyperfine strength of the conduction electrons at the nuclei. The product T1T=168 sec °K, independent of temperature T and frequency ν for T=1.4,4.2, and 77-350 °K, and for ν=2-10 MHz. Taking the carrier concentration N=2.6×1019 cm-3 independent of temperature to within 3% at 4.2, 77, and 300°K, and using an effective electron mass me*=0.2me, we calculate an averaged electron probability density at the nucleus, 〈|φF(0)|2 …
Pulsed Nmr By Tone-Burst Generation, David C. Look, Donald R. Locker
Pulsed Nmr By Tone-Burst Generation, David C. Look, Donald R. Locker
Physics Faculty Publications
No abstract provided.
Measurement Of Electron Spin-Lattice Relaxation Times Using Ordinary Epr Spectrometers, David C. Look, Donald R. Locker
Measurement Of Electron Spin-Lattice Relaxation Times Using Ordinary Epr Spectrometers, David C. Look, Donald R. Locker
Physics Faculty Publications
No abstract provided.
Nuclear Spin-Lattice Relaxation Measurements By Tone-Burst Modulation, David C. Look, Donald R. Locker
Nuclear Spin-Lattice Relaxation Measurements By Tone-Burst Modulation, David C. Look, Donald R. Locker
Physics Faculty Publications
No abstract provided.