Electronic Devices and Semiconductor Manufacturing Commons^™

Fourier Transform Infrared Spectroscopy For The Measurement Of Gesn/(Si)Gesn, Solomon Opeyemi Ojo

Graduate Theses and Dissertations

Photoluminescence (PL) and Electroluminescence (EL) characterization techniques are important tools for studying the optical and electrical properties of (Si)GeSn. Light emission from these PL and EL measurements provides relevant information on material quality, bandgap energy, current density, and device efficiency. Prior to this work, the in-house PL set-up of this lab which involves the use of a commercially-obtained dispersive spectrometer was used for characterizing both GeSn thin film and fabricated devices, but these measurements were limited by issues bordering on low spectral resolution, spectral artifacts, and poor signal-to-noise ratio (SNR) thereby resulting in the possible loss of vital information and …

Design Of A 350 Kw Silicon Carbide Based 3-Phase Inverter With Ultra-Low Parasitic Inductance, Matthew Feurtado

Graduate Theses and Dissertations

The objective of this thesis is to present a design for a low parasitic inductance, high power density 3-phase inverter using silicon-carbide power modules for traction application in the electric vehicles with a power rating of 350 kW. With the market share of electric vehicles continuing to grow, there is a great opportunity for wide bandgap semiconductors such as silicon carbide (SiC) to improve the efficiency and size of the motor drives in these applications. In order to accomplish this goal, careful design and selection of each component in the system for optimum performance from an electrical, mechanical, and thermal …

Development And Characterization Of Metal Contacts For Graded Composition Ingan Solar Cells, Reem E. Alhelais

Graduate Theses and Dissertations

There is an increasing demand for high-power electronic components and optoelectronic devices with low-loss and high efficiency. III-nitride semiconductor materials have demonstrated great potential for high-power, high-frequency, and high-temperature applications because of their remarkable and wide-ranging electronic and physical properties. These material systems, including alloys of AlN, GaN, and InN, are currently being explored for their potential to develop efficient photovoltaic cells. They can potentially achieve higher efficiency because of their very high direct wide band edge, absorption coefficients, and resistance to defects. The compositionally graded Group III-nitride alloy allows access to a large range of energies by varying the …

Growth And Characterization Of Semiconductor Materials And Devices For Extreme Environments Applications, Abbas Sabbar

Graduate Theses and Dissertations

Numerous industries require electronics to operate reliably in harsh environments, such as extreme high temperatures (HTs), low temperature (LT), radiation rich environments, multi-extreme, etc. This dissertation is focused on two harsh environments: HT and multi-extreme.

The first study is on HT optoelectronics for future high-density power module applications. In the power modules design, galvanic isolation is required to pass through the gate control signal, reject the transient noise, and break the ground loops. The optocoupler, which consists of a lighting emitting diode (LED) and photodetector (PD), is commonly used as the solution of galvanic isolation at room temperatures. There is …

High-Temperature Optoelectronic Device Characterization And Integration Towards Optical Isolation For High-Density Power Modules, Syam Madhusoodhanan

Graduate Theses and Dissertations

Power modules based on wide bandgap (WBG) materials enhance reliability and considerably reduce cooling requirements that lead to a significant reduction in total system cost and weight. Although these innovative properties lead power modules to higher power density, some concerns still need to be addressed to take full advantage of WBG-based modules. For example, the use of bulky transformers as a galvanic isolation system to float the high voltage gate driver limits further size reduction of the high-temperature power modules. Bulky transformers can be replaced by integrating high-temperature optocouplers to scale down power modules further and achieve disrupting performance in …

Converter- And Module-Level Packaging For High Power Density And High Efficiency Power Conversion, Amol Rajendrakumar Deshpande

Graduate Theses and Dissertations

Advancements in the converter- and module-level packaging will be the key for the development of the emerging high-power, high power-density, high-eciency power conversion applications, such as traction, shipboards, more-electric-aircraft, and locomotive. Wide bandgap (WBG) devices such as silicon carbide (SiC) MOSFET attract much attention in these applications for their fast switching speeds, resulting in low loss and a consequent possibility for high switching frequency to increase the power density. However, for high-current, high power implementations, WBG devices are still available in small die sizes. Multiple SiC devices need to be connected in parallel to replace a large IGBT die. It …

Synthesis And Application Of Ceramic Paste For High-Temperature Electronic Packaging, Ardalan Nasiri

Graduate Theses and Dissertations

This dissertation research focused on the synthesis and application of ceramic paste for high-temperature applications. An alumina paste material comprising aluminum dihydric phosphate and alumina powder was developed for high-temperature electronic packaging. Nano aluminum nitride and nano-silica powders were embedded to promote the paste curing process, limit the grain growth, and increase its bond shear strength. The chip-to-substrate bond strength was enhanced and met the MIL-STD requirements for die-attach assembly. Its encapsulation property was improved with fewer cracks compared to similar commercial ceramic encapsulants. The die-attach material and encapsulation properties tested at 500°C showed no defect or additional cracks. Thermal …

Design And Optimization Of Multichip Gan Module Enabling Improved Switching Performance, Asif Imran Emon

Graduate Theses and Dissertations

Wide bandgap semiconductors (SiC & GaN) due to their enhanced performance and superior material properties compared to traditional silicon power devices have become the ultimate choice for future high-performance power electronics energy conversion. GaN high electron mobility transistor (HEMT) offers very fast switching capability enabling the designer to push switching frequency to the MHz range. Traditional device packaging becomes a limiting factor in fully harnessing the benefits offered by these advanced power devices, and thus, improved and advanced packaging structures are a must to bridge the gap between GaN devices and their applications. A co-design, co-optimization method has been followed …

Ohmic Contact Metallization For Silicon Carbide In Future Transportation And Aviation Systems, Tanner W. Rice

Electrical Engineering Undergraduate Honors Theses

This paper analyzes metallization stacks in both n-type and p-type used in Silicon Carbide to create Ohmic Contacts. Silicon Carbide has shown its significance in usage as a semiconductor in high temperatures, and other extreme environments compared to its silicon counterpart. Additionally, silicon carbide exhibits many other favorable attributes such as strong radiation hardness, high power capability, and high-temperature tolerance. These attributes translate into great components for use in aviation and other future transportations by increasing reliability in a sector that already requires high reliability. Applications of this material could prove useful in fields such as aviation, among others. This …

Simultaneous Ohmic Contacts To N And P-Type Silicon Carbide For Future Electric Vehicles, Hayden Hunter

Electrical Engineering Undergraduate Honors Theses

The paper explores possible metallization schemes to form simultaneous ohmic contacts to n-type and p-type silicon carbide contacts. Silicon carbide has shown promise in revolutionizing the power electronics market due to its increased switching speed, compact design, and higher temperature tolerance when compared to Silicon, the market standard. With the continuing development of silicon carbide technology, higher efficiency in future electric vehicles can be achieved by employing this new technology. This paper discusses theoretical contact formation between metals and semiconductors along with a proposed experiment to create a Ni/Al metallization scheme on both n and p-type contacts simultaneously on a …

Reducing Emi In Sic Direct Torque Controlled Motor Drive, Michael Sykes

Electrical Engineering Undergraduate Honors Theses

This paper covers the comparison between Silicon (Si) vs Silicon Carbide (SiC) for Motor Drive systems and a possible control algorithm to limit the increased Electromagnetic Interference (EMI) caused by using SiC transistors for the inverter. Motor Drive systems need constant improvements if the world is going to move on from machines that emit CO₂ and other harmful gases into the Earth’s atmosphere. One reason these electric machines are not commonplace today is because of their efficiency and other problems they may cause. Silicon transistors are the most commonplace transistor around the world today, but advances over the past …

Design Of Submicron Structured Guided-Mode-Resonance Near-Infrared Polarizer, Marzia Zaman

Graduate Theses and Dissertations

The objective of this research is to design a larger submicron linear polarizer in the near-infrared wavelength range with a wide bandwidth which can be fabricated using the conventional thin-film microfabrication technology to reduce cost. For this purpose, a gold (Au) wire-grid transmission-type transverse-magnetic (TM) polarizer and a silicon (Si) wire-grid reflection-type TM polarizer, were designed using the guided-mode-resonance filter. The Au wire-grid TM polarizer of 700nm grating width and 1200nm grating period has 95% transmittance at 2400nm, more than 1000nm resonance peak bandwidth, and an extinction ratio (ER) of around 300 with a moderated level of sidebands. The 700nm …

Interfacial Contact With Noble Metal - Noble Metal And Noble Metal - 2d Semiconductor Nanostructures Enhance Optical Activity, Ricardo Raphael Lopez Romo

Graduate Theses and Dissertations

Noble metal nanoparticles and two-dimensional (2D) transition metal dichalcogenide (TMD) crystals offer unique optical and electronic properties that include strong exciton binding, spin-orbital coupling, and localized surface plasmon resonance. Controlling these properties at high spatiotemporal resolution can support emerging optoelectronic coupling and enhanced optical features. Excitation dynamics of these optical properties on physicochemically bonded mono- and few-layer TMD crystals with metal nanocrystals and two overlapping spherical metal nanocrystals were examined by concurrently (i) DDA simulations and (ii) far-field optical transmission UV-vis spectroscopic measurements. Initially, a novel and scalable method to unsettle van der Waals bonds in bulk TMDs to prepare …

High Frequency Ltcc Based Planar Transformer, Adithya Venkatanarayanan

Graduate Theses and Dissertations

As we move towards high power and higher frequency related technology, conventional wire-wound magnetics have their own limitations which has led path to the development of planar based magnetic materials. Nowadays more planar magnetic technology has been employed because it is easier to fabricate them. The planar magnetic is a transformer or an inductor that replaces the wire-wound transformer or inductors which generally uses copper wires. One of the main reasons why we move to planar magnetic technology is its operation at higher frequency which provides higher power density. This study explains in detail about the design and fabrication of …

Design And Optimization Of A High Power Density Silicon Carbide Traction Inverter, Tyler Adamson

Graduate Theses and Dissertations

This project was initiated with the goal of demonstrating a 3-phase silicon carbide based 150-kW 25 kW/L DC-AC power conversion unit capable of operation with coolant temperatures up to 90°C. The project goals were met and exceeded by first analyzing the established inverter topologies to find which one would yield the highest power density while still meeting electrical performance needs in the 150-kW range. Following topology selection, the smallest silicon carbide power module that met the electrical requirements of the system was found through experimental testing and simulation. After a power module selection was finalized, a DC link capacitor bank …

Development Of A Comsol Microdialysis Model, Towards Creation Of Microdialysis On A Chip With Improved Geometries And Recovery, Patrick Pysz

Graduate Theses and Dissertations

Microdialysis (µD) sampling is a diffusion-limited sampling method that has been widely used in different biomedical fields for greater than 35 years. Device calibration for in vivo studies is difficult for current non-steady state analytes of interest correlated with both inflammatory response and microbial signaling molecules (QS); which exist in low ng/mL to pg/mL with molecular weights over a wide range of 170 Da to 70 kDa. The primary performance metric, relative recovery (RR), relating the collected sample to the extracellular space concentration varies from 10% to 60% per analyte even under controlled bench-top conditions. Innovations in microdialysis device design …

Five-Level Flying Capacitor Converter Used As A Static Compensator For Current Unbalances In Three-Phase Distribution Systems, Rafael Franceschi

Graduate Theses and Dissertations

This thesis presents and evaluates a solution for unbalanced current loading in three-phase distribution systems. The proposed solution uses the flying capacitor multilevel converter as its main topology for an application known as Unbalanced Current Static Compensator. The fundamental theory, controller design and prototype construction will be presented along with the experimental results. The Unbalanced Current Static Compensator main objective is the balancing of the up-stream currents from the installation point to eliminate the negative- and zero-sequence currents originated by unbalanced single-phase loads.

Three separate single-phase flying capacitor converters are controlled independently using a d-q rotating reference frame algorithm to …

Switching Trajectory Control For High Voltage Silicon Carbide Power Devices With Novel Active Gate Drivers, Shuang Zhao

Graduate Theses and Dissertations

The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry due to their lower parasitics, higher blocking voltage, and higher thermal conductivity over their silicon (Si) counterparts. Applications of high voltage SiC power devices, generally 10 kV or higher, can significantly reduce the amount of the cascaded levels of converters in the distributed system, simplify the system by reducing the number of the semiconductor devices, and increase the system reliability.

However, the gate drivers for high voltage SiC devices are not available on the market. Also, the characteristics of the third generation 10 kV SiC MOSFETs …

Energy Transformation And Conservation Investigation, Mike Jackson, Holly Haney

High School Lesson Plans

Students will use a thermoelectric generator module to analyze the relationship between thermal and electrical energies. Using data collection sensors and analysis software, students will investigate the relationship between the temperature gradient across a thermoelectric generator module and the resulting electrical potential. Students will then use their data and analysis to solve problems relating to waste thermal energy in electrical systems and communicate their work to their peers and teacher.

Characterization Of High Temperature Optocoupler For Power Electronic Systems, David Gonzalez

Electrical Engineering Undergraduate Honors Theses

High-temperature devices have been rapidly increas due to the implementation of new technologies like silicon carbide, high-temperature ceramic, and others. Functionality under elevated temperatures can reduce signal integrity reducing the reliability of power electronic systems. This study presents an ongoing research effort to develop a high-temperature package for optocouplers to operate at higher temperature compared with commercial devices. Low temperature co-fired ceramic (LTCC) was used as the substrate. Bare die commercial LED and photodetectors were attached to the substrate and tested for functionality. Preliminary results show enhanced performance at elevated temperatures compared to a commercial optocoupler device.

Prototyping A Capacitive Sensing Device For Gesture Recognition, Chenglong Lin

Computer Science and Computer Engineering Undergraduate Honors Theses

Capacitive sensing is a technology that can detect proximity and touch. It can also be utilized to measure position and acceleration of gesture motions. This technology has many applications, such as replacing mechanical buttons in a gaming device interface, detecting respiration rate without direct contact with the skin, and providing gesture sensing capability for rehabilitation devices. In this thesis, an approach to prototype a capacitive gesture sensing device using the Eagle PCB design software is demonstrated. In addition, this paper tested and evaluated the resulting prototype device, validating the effectiveness of the approach.

Bgaas Alloy Semiconductors For Lasers On Silicon, Joshua Mcarthur

Mechanical Engineering Undergraduate Honors Theses

In the world of semiconductors today, there is a large dissonance between optical devices and electrical application. Due to the limitations of electron transport, photonic integrated circuits are soon-to-be vital in fields like telecommunications and sensing. Right now, these PIC’s are mostly made from indium phosphide. Due to its ubiquitous nature, however, there is a huge push to integrate efficient optics with silicon. It’s cheap, abundant, dope-able, and our electronic infrastructure is based on it. The reason why silicon photonics aren’t already commercialized is because of silicon’s indirect bandgap—it is inefficient with optical applications. The problem with combining direct gap …

A Silicon Germanium Cmos Linear Voltage Regulator For Wireless Agricultural Applications, Aminta Naidili Castillo Robles

Graduate Theses and Dissertations

This thesis presents the design, simulation and test results of a silicon germanium (SiGe) complementary metal-oxide-semiconductor (CMOS) linear regulator. The objective of the circuit is to power other analog devices regardless of the load current and input voltage changes. The application of this regulator is to be part of a project developing a miniaturized semiconductor platform that can be inserted into stems of crops in order to measure data inside the plant and then send it wirelessly to the user. The linear regulator was designed on a BiCMOS SiGe 0.13µm which is a GlobalFoundries process. It has been tested at …

Investigation Of Critical Technologies Of Chemical Vapor Deposition For Advanced (Si)Gesn Materials, Joshua Matthew Grant

Graduate Theses and Dissertations

The development of new materials for efficient optoelectronic devices from Group IV elements is the heart of Group IV photonics. This has direct ties to modern technology as the foundation for the electronics industry is silicon. This has driven the development of silicon-based optoelectronics using these other Group IV materials as silicon is a poor optical material due to its indirect band gap when compared to the III-V semiconductors that are used by most of the optoelectronics industry. While efforts have been made to integrate III-V materials onto silicon substrates, the incompatibility with the complementary metal oxide semiconductor process has …

Model Development And Assessment Of The Gate Network In A High-Performance Sic Power Module, William Austin Curbow

Graduate Theses and Dissertations

The main objective of this effort is to determine points of weakness in the gate network of a high-performance SiC power module and to offer remedies to these issues to increase the overall performance, robustness, and reliability of the technology. In order to accomplish this goal, a highly accurate model of the gate network is developed through three methods of parameter extraction: calculation, simulation, and measurement. A SPICE model of the gate network is developed to analyze four electrical issues in a high-speed, SiC-based power module including the necessary internal gate resistance for damping under-voltage and over-voltage transients, the disparity …

Synchrophasor-Based Fault Location Detection And Classification, In Power Systems, Using Artificial Intelligence, Hemal Falak

Graduate Theses and Dissertations

With the introduction of sophisticated electronic gadgets which cannot sustain interruption in the provision of electricity, the need to supply uninterrupted and reliable power supply, to the consumers, has become a crucial factor in the present-day world. Therefore, it is customary to correctly identify fault locations in an electrical power network, in order to rectify faults and restore power supply in the minimum possible time. Many automated fault location detection algorithms have been proposed, however, prior art requires topological and physical information of the electrical power network. This thesis presents a new method of detecting fault locations, in transmission as …

Exfoliation, Synthesis, And Characterization Of Nanoscale Te, Takayuki Hironaka

Graduate Theses and Dissertations

Since the experimental discovery of graphene, two dimensional materials have enjoyed more attention and emphasis in academic research than nanowires, but the latter are an important area of study for creating 1D materials, or single atom chains, the next generation materials for advancing electronic devices. Atomically thin layers can be generated from 2D materials with weak bonds in one direction, and by applying this concept to one dimensional weakly bonded materials, we hypothesize that single atom chains with atomic-scale diameters may be produced. Tellurium (Te) and selenium (Se) have lattices consisting of spiral chains oriented along the c-axis, and each …

Gesn Thin Film Epitaxy And Quantum Wells For Optoelectronic Devices, Perry Christian Grant

Graduate Theses and Dissertations

Group IV photonics is an effort to generate viable infrared optoelectronic devices using group IV materials. Si-based optoelectronics have received monumental research since Si is the heart of the electronics industry propelling our data driven world. Silicon however, is an indirect material whose optical characteristics are poor compared to other III-IV semiconductors that make up the optoelectronics industry. There have been major efforts to integrate III-V materials onto Si substrates. Great progress on the integration of these III-V materials has occurred but incompatibility with CMOS processing has presented great difficulty in this process becoming a viable and cost-effective solution. Germanium …

Growth And Behaviors Of Inn/Gan Multiple Quantum Wells By Plasma-Assisted Molecular Beam Epitaxy, Chen Li

Graduate Theses and Dissertations

Fully realizing the potential of InGaN semiconductors requires high quality materials with arbitrary In-content. To this date the growth of In-rich InGaN films is still challenging since it suffers from the low growth temperatures and many detrimental alloying problems. InN/GaN multiple quantum wells (MQWs) and super lattices (SLs) are expected to be promising alternatives to random InGaN alloys since in principle they can achieve the equivalent band gap of InGaN random alloys with arbitrarily high In-content and at the same time bypass many growth difficulties.

This dissertation focuses on studying the growth mechanisms, structural properties and energy structures of InN/GaN …

Fabrication And Characterization Of Electrochemical Glucose Sensors, Mohammed Marie

Graduate Theses and Dissertations

Electrochemical sensors based on the nanostructure of the semiconductor materials are of tremendous interest to be utilized for glucose monitoring. The sensors, based on the nanostructure of the semiconductor materials, are the third generations of the glucose sensors that are fast, sensitive, and cost-effect for glucose monitoring.

Glucose sensors based on pure zinc oxide nanorods (NRs) grown on different substrates, such ITO, FTO, and Si/SiO2/Au, were investigated in this research. Silicon nanowire (NW)- based glucose sensors were also studied. First, an enzyme-based glucose sensor was fabricated out of glass/ITO/ZnO NRs/BSA/GOx/nafion membrane. The sensor was tested amperometrically at different glucose concentrations. …